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公开(公告)号：US10095102B2
公开(公告)日：2018-10-09
申请号：US15362089
申请日：2016-11-28
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chih-Chiang Tu , Chun-Lang Chen
Abstract: In some embodiments, a patterned photomask has a plurality of shielding layers. In some embodiments, a photomask for mask patterning is described. The photomask includes a phase shift layer overlying a transparent layer. The photomask also includes a first shielding layer overlying the phase shift layer. The first shielding layer has a first thickness and a first optical density. The photomask further includes a second shielding layer overlying the first shielding layer. The second shielding layer has a second thickness and a second optical density. The second thickness is less that than the first thickness and the second optical density is less than the first optical density.
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公开(公告)号：US10012899B2
公开(公告)日：2018-07-03
申请号：US15356204
申请日：2016-11-18
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chih-Chiang Tu , Chun-Lang Chen , Chue San Yoo , Jong-Yuh Chang , Chia-Shiung Tsai , Ping-Yin Liu , Hsin-Chang Lee , Chih-Cheng Lin , Yun-Yue Lin
CPC classification number: G03F1/62 , C23C14/16 , C23C14/165 , C23C14/18 , C23C16/01 , C23C16/26 , C23C16/56 , C23C28/32 , G03F1/64 , H01L21/0332 , H01L21/0335 , H01L21/0337
Abstract: A method includes depositing a first material layer over a first substrate; and depositing a graphene layer over the first material layer. The method further includes depositing an amorphous silicon layer over the graphene layer and bonding the amorphous silicon layer to a second substrate, thereby forming an assembly. The method further includes annealing the assembly, thereby converting the amorphous silicon layer to a silicon oxide layer. The method further includes removing the first substrate from the assembly and removing the first material layer from the assembly, thereby exposing the graphene layer.
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公开(公告)号：US09377701B2
公开(公告)日：2016-06-28
申请号：US14696596
申请日：2015-04-27
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chih-Chiang Tu , Chun-Lang Chen , Jong-Yuh Chang , Chien-Chih Chen , Chen-Shao Hsu
CPC classification number: G03F7/70783 , G03F1/22 , G03F1/70 , G03F9/7069
Abstract: In some embodiments, a mask patterning system includes an electronic memory configured to store an integrated circuit mask layout. A computation tool determines a number of radiation shots to be used to write the integrated circuit mask layout to a physical mask. The computation tool also determines a scaling factor which accounts for expected thermal expansion of the physical mask due to the number of radiation shots used in writing the integrated circuit mask layout to the physical mask. An ebeam or laser writing tool writes the integrated circuit mask layout to the physical mask based on the scaling factor and by using the number of radiation shots.
Abstract translation: 在一些实施例中，掩模图案形成系统包括被配置为存储集成电路掩模布局的电子存储器。 计算工具确定用于将集成电路掩模布局写入物理掩模的多个辐射照射。 计算工具还确定了由于在将集成电路掩模布局写入物理掩模中使用的辐射照射的数量而导致物理掩模的预期热膨胀的缩放因子。 ebeam或激光写入工具根据缩放因子和使用辐射数量将集成电路掩模布局写入物理掩模。
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24.发明授权Method and system of mask data preparation for curvilinear mask patterns for a device 有权用于设备的曲线掩模图案的掩模数据准备的方法和系统公开(公告)号：US08812999B2
公开(公告)日：2014-08-19
申请号：US13732469
申请日：2013-01-02
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Ru-Gun Liu , Wen-Hao Cheng , Chih-Chiang Tu , Shuo-Yen Chou
IPC: G06F17/50
Abstract: A method comprises: (a) transforming a layout of a layer of an integrated circuit (IC) or micro electro-mechanical system (MEMS) to a curvilinear mask layout; (b) replacing at least one pattern of the curvilinear mask layout with a previously stored fracturing template having approximately the same shape as the pattern, to form a fractured IC or MEMS layout; and (c) storing, in a non-transitory storage medium, an e-beam generation file including a representation of the fractured IC or MEMS layout, to be used for fabricating a photomask.
Abstract translation: 一种方法包括：（a）将集成电路（IC）或微机电系统（MEMS）的层的布局变换为曲线掩模布局; （b）用具有与图案大致相同形状的先前存储的压裂模板代替曲线掩模布局的至少一个图案，以形成断裂的IC或MEMS布局; 以及（c）在非暂时性存储介质中存储用于制造光掩模的电子束生成文件，其包括断裂的IC或MEMS布局的表示。
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公开(公告)号：US20240385507A1
公开(公告)日：2024-11-21
申请号：US18787490
申请日：2024-07-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chi-Ta Lu , Chih-Chiang Tu , Cheng-Ming Lin , Ching-Yueh Chen , Wei-Chung Hu , Ting-Chang Hsu , Yu-Tung Chen
Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.
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Patent Agency Ranking
公开(公告)号：US11854861B2
公开(公告)日：2023-12-26
申请号：US16396438
申请日：2019-04-26
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chih-Chiang Tu , Chun-Lang Chen
IPC: H01L21/687 , H01J37/32 , H01L21/67 , G03F1/80 , H01L21/3065
CPC classification number: H01L21/68764 , G03F1/80 , H01J37/32009 , H01J37/32715 , H01L21/3065 , H01L21/67069 , H01L21/68721 , H01L21/68735 , H01L21/68778 , H01J2237/334
Abstract: A spin dry etching process includes loading an object into a dry etching system. A dry etching process is performed to the object, and the object is spun while the dry etching process is being performed. The spin dry etching process is performed using a semiconductor fabrication system. The semiconductor fabrication system includes a dry etching chamber in which a dry etching process is performed. A holder apparatus has a horizontally-facing slot that is configured for horizontal insertion of an etchable object therein. The etchable object includes either a photomask or a wafer. A controller is communicatively coupled to the holder apparatus and configured to spin the holder apparatus in a clockwise or counterclockwise direction while the dry etching process is being performed. An insertion of the etchable object into the horizontally-facing slot of the holder apparatus restricts a movement of the object as the dry etching process is performed.
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公开(公告)号：US11262658B2
公开(公告)日：2022-03-01
申请号：US16860080
申请日：2020-04-28
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Che-Yuan Chang , Chih-Chiang Tu , Ming-Ho Tsai , Ching-Hung Lai
Abstract: A photomask includes a transparent substrate and a shielding pattern disposed on the transparent substrate. The shielding pattern includes shielding island structures. The shielding island structures are separated from and spaced apart from one another by dividing lanes. The dividing lanes expose the underlying transparent substrate. The photomask is configured for a light of a wavelength, and the dividing lanes reduce or hinder a transmission of the light of the wavelength.
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公开(公告)号：US20200285143A1
公开(公告)日：2020-09-10
申请号：US16879889
申请日：2020-05-21
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chih-Chiang Tu , Chun-Lang Chen
Abstract: Some embodiments pertain to a photomask for mask patterning. The photomask includes a phase shift layer overlying a transparent layer, a first shielding layer overlying the phase shift layer, and a second shielding layer overlying the first shielding layer. The first shielding layer has a first optical density, and the second shielding layer has a second optical density. The second optical density is less than the first optical density.
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公开(公告)号：US10670956B2
公开(公告)日：2020-06-02
申请号：US16153935
申请日：2018-10-08
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chih-Chiang Tu , Chun-Lang Chen
Abstract: Some embodiments pertain to a photomask for mask patterning. The photomask includes a phase shift layer overlying a transparent layer, a first shielding layer overlying the phase shift layer, and a second shielding layer overlying the first shielding layer. The first shielding layer has a first optical density, and the second shielding layer has a second optical density. The second optical density is less than the first optical density.
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公开(公告)号：US20190137862A1
公开(公告)日：2019-05-09
申请号：US15940969
申请日：2018-03-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Shih-Hao Yang , Chih-Chiang Tu , Chun-Lang Chen
Abstract: Masks and methods of forming the same are disclosed. The mask includes a substrate, a phase shift layer, a shading layer and a passivation layer. The phase shift layer is disposed over the substrate. The shading layer is disposed over the phase shift layer. The passivation layer is disposed over and in physical contact with the shading layer.
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