公开(公告)号：US06232192B1

公开(公告)日：2001-05-15

申请号：US09484410

申请日：2000-01-18

申请人： Satoshi Yamakawa ,  Yasunori Tokuda ,  Takumi Nakahata ,  Taisuke Furukawa ,  Shigemitsu Maruno

发明人： Satoshi Yamakawa ,  Yasunori Tokuda ,  Takumi Nakahata ,  Taisuke Furukawa ,  Shigemitsu Maruno

IPC分类号： H01L21336

CPC分类号： H01L21/28194 ,  H01L21/2257 ,  H01L21/26586 ,  H01L21/28176 ,  H01L21/28247 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/28525 ,  H01L29/41775 ,  H01L29/41783 ,  H01L29/6653 ,  H01L29/66628

摘要： Source/drain diffusion regions are formed on the silicon substrate such that the source/drain diffusion regions sandwich a gate electrode from both sides on the silicon substrate. Sidewall oxide films are formed, one on each side surface of the gate electrode. Recessed portions are formed in the extension portions E beneath the sidewall oxide films. Source/drain electrodes are formed to fill the recessed portions. Thus, the sheet resistance of the respective regions including a pair of source/drain diffusion regions and source/drain electrodes is reduced, and a semiconductor device with a field-effect transistor having an improved current drivability is obtained.

摘要翻译： 源极/漏极扩散区域形成在硅衬底上，使得源极/漏极扩散区域在硅衬底上从两侧夹着栅电极。 在栅电极的每个侧表面上形成侧壁氧化膜。 在侧壁氧化膜下面的延伸部分E中形成有凹入部分。 形成源/漏电极以填充凹部。 因此，包括一对源极/漏极扩散区域和源极/漏极电极的各个区域的薄层电阻减小，并且获得具有改善的电流驱动能力的具有场效应晶体管的半导体器件。

公开(公告)号：US06943428B2

公开(公告)日：2005-09-13

申请号：US10229138

申请日：2002-08-28

申请人： Taisuke Furukawa ,  Yoshikazu Yoneda ,  Tatsuhiko Ikeda

发明人： Taisuke Furukawa ,  Yoshikazu Yoneda ,  Tatsuhiko Ikeda

IPC分类号： H01L21/331 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/732 ,  H01L29/737 ,  H01L27/082 ,  H01L27/102 ,  H01L29/70 ,  H01L31/11

CPC分类号： H01L21/8249 ,  H01L27/0635 ,  H01L27/0652

摘要： A semiconductor device and a method for manufacturing the device using a semiconductor substrate of a high resistance with improved Q value of a passive circuit element. Leakage current due to an impurity fluctuation, in the high resistance semiconductor substrate and noise resistance of an active element in the high resistance semiconductor substrate are improved. The semiconductor device includes a bipolar transistor at a main surface of and in the semiconductor substrate. The bipolar transistor includes a semiconductor layer of a first conductivity type at a bottom portion of the bipolar transistor and the semiconductor device includes a buried layer of a second conductivity type, located in the semiconductor substrate and facing the semiconductor layer of the first conductivity type.

摘要翻译： 一种半导体器件和使用具有改善的无源电路元件的Q值的具有高电阻的半导体衬底的器件的制造方法。 由于高电阻半导体衬底中的杂质波动引起的漏电流和高电阻半导体衬底中的有源元件的耐噪声性提高。 半导体器件包括在半导体衬底的主表面处的双极晶体管。 双极晶体管包括在双极晶体管的底部具有第一导电类型的半导体层，并且半导体器件包括位于半导体衬底中并且面对第一导电类型的半导体层的第二导电类型的掩埋层。

公开(公告)号：US09091565B2

公开(公告)日：2015-07-28

申请号：US13085133

申请日：2011-04-12

申请人： Yuji Kawano ,  Hiroshi Kobayashi ,  Kazuyasu Nishikawa ,  Taisuke Furukawa

发明人： Yuji Kawano ,  Hiroshi Kobayashi ,  Kazuyasu Nishikawa ,  Taisuke Furukawa

IPC分类号： G01R33/09 ,  G01B7/14 ,  G01B7/30 ,  G01D5/14 ,  G01D5/245

CPC分类号： G01D5/147 ,  G01D5/2451

摘要： A magnetic position detection apparatus includes a substrate, a magnet, a bridge circuit including first through fourth magneto-electric converting elements formed on the substrate, and a detection circuit. A substrate surface is substantially perpendicular to a magnet magnetization direction. The second and third magneto-electric converting elements are, when viewed along the magnet magnetization direction, disposed to be on or in the vicinity of a straight line passing through a center point of a magnetic pole of the magnet and parallel to a straight line perpendicular to both the magnet magnetization direction and the magnetic mobile object. The first and fourth magneto-electric converting elements are disposed so that, when not opposed to the magnetic mobile object, a component of a substrate of a magnetic field to be applied thereto is substantially same as that of a magnetic field to be applied to the second and third magneto-electric converting elements.

摘要翻译： 磁性位置检测装置包括基板，磁体，包括形成在基板上的第一至第四磁电转换元件的桥接电路和检测电路。 基板表面基本上垂直于磁体磁化方向。 第二和第三磁电转换元件当沿着磁化磁化方向观察时，被设置在通过磁体的磁极的中心点并平行于垂直于直线的直线的直线附近或附近 磁化方向和磁性移动体。 第一和第四磁电转换元件设置成当不与磁性移动体相对时，要施加到其上的磁场的基板的分量与施加到磁性移动体的磁场的分量基本相同 第二和第三磁电转换元件。

公开(公告)号：US06635938B1

公开(公告)日：2003-10-21

申请号：US09716219

申请日：2000-11-21

申请人： Takumi Nakahata ,  Shigemitsu Maruno ,  Taisuke Furukawa ,  Naruhisa Miura ,  Toshiyuki Oishi ,  Yasunori Tokuda

发明人： Takumi Nakahata ,  Shigemitsu Maruno ,  Taisuke Furukawa ,  Naruhisa Miura ,  Toshiyuki Oishi ,  Yasunori Tokuda

IPC分类号： H01L2994

CPC分类号： H01L29/4983 ,  H01L21/823418 ,  H01L21/823468 ,  H01L29/41783 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/66628

摘要： A polysilicon nitride film is formed to cover a polysilicon gate. By heat treatment of the silicon nitride film in an oxygen atmosphere, a silicon oxinitride film is formed. By anisotropically etching the silicon oxinitride film and the silicon nitride film, a sidewall insulating film is formed. By epitaxial growth, selective silicon films of a prescribed film thickness are formed on source and drain regions. During this period, silicon islands are not deposited on the surface of sidewall insulating film. Consequently, a semiconductor device including a transistor of a superior electrical insulation can be obtained.

摘要翻译： 形成多晶硅氮化物膜以覆盖多晶硅栅极。 通过在氧气氛中对氮化硅膜进行热处理，形成硅氧氮化物膜。 通过各向异性蚀刻氧氮化硅膜和氮化硅膜，形成侧壁绝缘膜。 通过外延生长，在源极和漏极区域上形成规定膜厚度的选择性硅膜。 在此期间，硅岛不会沉积在侧壁绝缘膜的表面上。 因此，可以获得包括具有优异的电绝缘的晶体管的半导体器件。

公开(公告)号：US6110291A

公开(公告)日：2000-08-29

申请号：US689313

申请日：1996-08-07

申请人： Kenyu Haruta ,  Koichi Ono ,  Hitoshi Wakata ,  Mutsumi Tsuda ,  Yoshio Saito ,  Keisuke Nanba ,  Kazuyoshi Kojima ,  Tetsuya Takami ,  Akihiro Suzuki ,  Tomohiro Sasagawa ,  Kenichi Kuroda ,  Toshiyuki Oishi ,  Yukihiko Wada ,  Akihiko Furukawa ,  Yasuji Matsui ,  Akimasa Yuki ,  Takaaki Kawahara ,  Hideki Yabe ,  Taisuke Furukawa ,  Kouji Kise ,  Noboru Mikami ,  Tsuyoshi Horikawa ,  Tetsuo Makita ,  Kazuo Kuramoto ,  Naohiko Fujino ,  Hiroshi Kuroki ,  Tetsuo Ogama ,  Junji Tanimura

发明人： Kenyu Haruta ,  Koichi Ono ,  Hitoshi Wakata ,  Mutsumi Tsuda ,  Yoshio Saito ,  Keisuke Nanba ,  Kazuyoshi Kojima ,  Tetsuya Takami ,  Akihiro Suzuki ,  Tomohiro Sasagawa ,  Kenichi Kuroda ,  Toshiyuki Oishi ,  Yukihiko Wada ,  Akihiko Furukawa ,  Yasuji Matsui ,  Akimasa Yuki ,  Takaaki Kawahara ,  Hideki Yabe ,  Taisuke Furukawa ,  Kouji Kise ,  Noboru Mikami ,  Tsuyoshi Horikawa ,  Tetsuo Makita ,  Kazuo Kuramoto ,  Naohiko Fujino ,  Hiroshi Kuroki ,  Tetsuo Ogama ,  Junji Tanimura

IPC分类号： C23C14/02 ,  C23C14/08 ,  C23C14/22 ,  C23C14/28 ,  C23C14/34 ,  C23C14/54 ,  C23C14/56 ,  C23C14/00

CPC分类号： C23C14/087 ,  C23C14/022 ,  C23C14/22 ,  C23C14/28 ,  C23C14/3471 ,  C23C14/54 ,  C23C14/541 ,  C23C14/547 ,  C23C14/564 ,  Y10S505/732

摘要： A thin film forming apparatus using laser includes a chamber (1), a target (5) placed therein, a laser light source (10) for emitting laser beam to target (5), and a substrate holder (3). When target (5) is irradiated with laser beam (16), a plume (15) is generated, and materials included in plume (15) are deposited on the surface of a substrate (2) held by substrate holder (3). The laser beam emitted from laser light source (10) has its cross section shaped to a desired shape when passed through a shielding plate (4804), for example, so that the surface of the target (5) is irradiated with the beam having uniform light intensity distribution. Therefore, a plume (15) having uniform density distribution of active particles is generated, and therefore a thin film of high quality can be formed over a wide area with uniform film quality, without damaging the substrate.

公开(公告)号：US06373108B1

公开(公告)日：2002-04-16

申请号：US09259336

申请日：1999-03-01

申请人： Satoshi Yamakawa ,  Yasunori Tokuda ,  Takumi Nakahata ,  Taisuke Furukawa ,  Shigemitsu Maruno

发明人： Satoshi Yamakawa ,  Yasunori Tokuda ,  Takumi Nakahata ,  Taisuke Furukawa ,  Shigemitsu Maruno

IPC分类号： H01L2976

CPC分类号： H01L21/28194 ,  H01L21/2257 ,  H01L21/26586 ,  H01L21/28176 ,  H01L21/28247 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/28525 ,  H01L29/41775 ,  H01L29/41783 ,  H01L29/6653 ,  H01L29/66628

摘要： Source/drain diffusion regions are formed on the silicon substrate such that the source/drain diffusion regions sandwich a gate electrode from both sides on the silicon substrate. Sidewall oxide films are formed, one on each side surface of the gate electrode. Recessed portions are formed in the extension portions E beneath the sidewall oxide films. Source/drain electrodes are formed to fill the recessed portions. Thus, the sheet resistance of the respective regions including a pair of source/drain diffusion regions and source/drain electrodes is reduced, and a semiconductor device with a field-effect transistor having an improved current drivability is obtained.

摘要翻译： 源极/漏极扩散区域形成在硅衬底上，使得源极/漏极扩散区域在硅衬底上从两侧夹着栅电极。 在栅电极的每个侧表面上形成侧壁氧化膜。 在侧壁氧化膜下面的延伸部分E中形成有凹入部分。 形成源/漏电极以填充凹部。 因此，包括一对源极/漏极扩散区域和源极/漏极电极的各个区域的薄层电阻减小，并且获得具有改善的电流驱动能力的具有场效应晶体管的半导体器件。

公开(公告)号：US06228728B1

公开(公告)日：2001-05-08

申请号：US09243480

申请日：1999-02-03

申请人： Taisuke Furukawa ,  Takumi Nakahata ,  Shigemitsu Maruno ,  Kohei Sugihara ,  Yasutaka Nishioka ,  Satoshi Yamakawa ,  Yasunori Tokuda

发明人： Taisuke Furukawa ,  Takumi Nakahata ,  Shigemitsu Maruno ,  Kohei Sugihara ,  Yasutaka Nishioka ,  Satoshi Yamakawa ,  Yasunori Tokuda

IPC分类号： H01L21336

CPC分类号： H01L29/66628

摘要： According to the inventive method of fabricating a semiconductor device, a silicon substrate is exposed to an oxygen atmosphere of 600° C. to 900° C., for forming silicon oxide films on surfaces of epitaxial silicon layers and those of silicon fragments. Thus, a method of fabricating a semiconductor device capable of preventing electrodes thereof from shorting can be provided.

摘要翻译： 根据制造半导体器件的本发明方法，将硅衬底暴露于600℃至900℃的氧气氛中，以在外延硅层和硅片的表面上形成氧化硅膜。 因此，可以提供一种制造能够防止其电极短路的半导体器件的方法。

公开(公告)号：US5760366A

公开(公告)日：1998-06-02

申请号：US699707

申请日：1996-08-07

申请人： Kenyu Haruta ,  Koichi Ono ,  Mutsumi Tsuda ,  Takaaki Kawahara ,  Taisuke Furukawa

发明人： Kenyu Haruta ,  Koichi Ono ,  Mutsumi Tsuda ,  Takaaki Kawahara ,  Taisuke Furukawa

IPC分类号： C23C14/02 ,  C23C14/08 ,  C23C14/22 ,  C23C14/28 ,  C23C14/34 ,  C23C14/54 ,  C23C14/56 ,  B23K26/00 ,  C23C14/35

CPC分类号： C23C14/087 ,  C23C14/022 ,  C23C14/22 ,  C23C14/28 ,  C23C14/3471 ,  C23C14/54 ,  C23C14/541 ,  C23C14/547 ,  C23C14/564 ,  Y10S505/732

摘要： A thin film forming apparatus using a laser includes a chamber (1), a target (5) placed therein, a laser light source (10) for emitting a laser beam to target 5, and a substrate holder (3). When the target is irradiated with a laser beam, a plume (15) is generated, and materials included in plume 15 are deposited on the surface of a substrate (2) held by the substrate holder (3). A magnetic field is generated to direct the plume. The magnetic field can be parallel to the surface of the substrate or in another embodiment a cusp magnetic field can be used (see FIG. 130).

摘要翻译： 使用激光器的薄膜形成装置包括：室（1），放置在其中的靶（5），用于向目标5发射激光的激光源（10）和基板保持器（3）。 当用激光束照射靶时，产生羽流（15），并且包含在羽流15中的材料沉积在由基板保持器（3）保持的基板（2）的表面上。 产生磁场以引导羽流。 磁场可以平行于衬底的表面，或者在另一个实施例中，可以使用尖点磁场（参见图130）。