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    APPARATUS FOR FORMING THIN FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR FILM
    3.
    发明申请
    APPARATUS FOR FORMING THIN FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR FILM 有权
    用于形成薄膜的装置和制造半导体膜的方法

    公开(公告)号：US20110097823A1

    公开(公告)日：2011-04-28

    申请号：US12994343

    申请日：2009-05-14

    申请人： Mutsumi Tsuda ,  Masakazu Taki

    发明人： Mutsumi Tsuda ,  Masakazu Taki

    IPC分类号： H01L21/66 ,  C23C16/455 ,  C23C16/458 ,  C23C16/503 ,  C23C16/52

    CPC分类号： H01L21/0262 ,  C23C16/24 ,  C23C16/45523 ,  C23C16/515 ,  H01L21/02532 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

    摘要： An apparatus including a vacuum chamber having a substrate holding unit that holds a substrate and a plasma electrode facing the substrate, a first gas supply unit that supplies a H2 gas to the vacuum chamber at a constant flow rate, a second gas supply unit that opens or closes a valve to turn on or off the supply of a SiH4 gas, a high-frequency power source that applies a high frequency voltage to the plasma electrode, a shield box that is connected to a ground so as to surround the plasma electrode outside the vacuum chamber, and a control unit that controls the valve such that the SiH4 gas is periodically supplied to the vacuum chamber and modulates the amplitude of high frequency power in synchronization with the opening or closing of the valve, and the valve is provided in the shield box.

    摘要翻译： 一种包括具有保持基板的基板保持单元和面向基板的等离子体电极的真空室的设备，以恒定流量向真空室供给H2气体的第一气体供给单元，打开的第二气体供给单元 或关闭阀门以接通或关闭向等离子体电极施加高频电压的高频电源的SiH 4气体的供给，连接到地面以围绕等离子体电极外部的屏蔽盒 真空室和控制单元，其控制阀，使得SiH4气体周期性地供给到真空室，并且与阀的打开或关闭同步地调制高频功率的振幅，并且阀设置在 屏蔽盒。

    Apparatus for forming thin film and method of manufacturing semiconductor film
    4.
    发明授权
    Apparatus for forming thin film and method of manufacturing semiconductor film 有权
    用于形成薄膜的装置和制造半导体膜的方法

    公开(公告)号：US08474403B2

    公开(公告)日：2013-07-02

    申请号：US13237001

    申请日：2011-09-20

    申请人： Mutsumi Tsuda ,  Masakazu Taki

    发明人： Mutsumi Tsuda ,  Masakazu Taki

    IPC分类号： C23C16/00

    CPC分类号： H01L21/0262 ,  C23C16/24 ,  C23C16/45523 ,  C23C16/515 ,  H01L21/02532 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

    摘要： An apparatus including a vacuum chamber having a substrate holding unit that holds a substrate and a plasma electrode facing the substrate, a first gas supply unit that supplies a H2 gas to the vacuum chamber at a constant flow rate, a second gas supply unit that opens or closes a valve to turn on or off the supply of a SiH4 gas, a high-frequency power source that applies a high frequency voltage to the plasma electrode, a shield box that is connected to a ground so as to surround the plasma electrode outside the vacuum chamber, and a control unit that controls the valve such that the SiH4 gas is periodically supplied to the vacuum chamber and modulates the amplitude of high frequency power in synchronization with the opening or closing of the valve, and the valve is provided in the shield box.

    摘要翻译： 一种包括具有保持基板的基板保持单元和面向基板的等离子体电极的真空室的设备，以恒定流量向真空室供给H2气体的第一气体供给单元，打开的第二气体供给单元 或关闭阀门以接通或关闭向等离子体电极施加高频电压的高频电源的SiH 4气体的供给，连接到地面以围绕等离子体电极外部的屏蔽盒 真空室和控制单元，其控制阀，使得SiH4气体周期性地供给到真空室，并且与阀的打开或关闭同步地调制高频功率的振幅，并且阀设置在 屏蔽盒。

    Manufacturing method of semiconductor integrated circuit device
    5.
    发明授权
    Manufacturing method of semiconductor integrated circuit device 失效
    半导体集成电路器件的制造方法

    公开(公告)号：US07790478B2

    公开(公告)日：2010-09-07

    申请号：US12180514

    申请日：2008-07-25

    申请人： Kazuyuki Fujii ,  Minoru Hanazaki ,  Gen Kawaharada ,  Masakazu Taki ,  Mutsumi Tsuda

    发明人： Kazuyuki Fujii ,  Minoru Hanazaki ,  Gen Kawaharada ,  Masakazu Taki ,  Mutsumi Tsuda

    IPC分类号： H01L21/66

    CPC分类号： H01L21/67069 ,  C23C16/4405 ,  C23C16/52 ,  H01J37/32357 ,  H01J37/32862 ,  H01J37/32963

    摘要： In remote plasma cleaning, it is difficult to locally excite a plasma because the condition is not suitable for plasma excitation different from that at the time of film formation and a method using light has a problem of fogginess of a detection window that cannot be avoided in a CVD process and is not suitable for a mass production process. In order to solve these problems, the outline of the present invention is a manufacturing method of a semiconductor integrated circuit device in which a step of depositing a desired film by exciting a reaction gas using a plasma in a reaction chamber and a step of introducing a cleaning gas excited in a remote plasma excitation chamber into the reaction chamber and performing remote plasma cleaning of the reaction chamber in an atmosphere without plasma excitation are repeated, wherein a local plasma is generated in the reaction chamber or a vacuum system for evacuating the reaction chamber by a plasma excitation system of capacitively coupled type and the end point of the remote plasma cleaning is detected by monitoring the electrical characteristic of the plasma.

    摘要翻译： 在远程等离子体清洗中，由于条件不适合与成膜时不同的等离子体激发，因此难以局部激发等离子体，使用光的方法存在无法避免的检测窗的雾化问题 CVD工艺，不适合大批量生产。 为了解决这些问题，本发明的概述是一种半导体集成电路器件的制造方法，其中通过在反应室中使用等离子体激发反应气体来沉积所需的膜的步骤，以及引入 在远程等离子体激发室中被激发到反应室中并且在没有等离子体激发的气氛中进行反应室的远程等离子体清洗的清洁气体被重复，其中在反应室中产生局部等离子体或用于抽空反应室的真空系统 通过电容耦合型等离子体激发系统，通过监测等离子体的电气特性来检测远程等离子体清洗的终点。

    Method of fabricating a semiconductor device including time-selective etching process
    6.
    发明授权
    Method of fabricating a semiconductor device including time-selective etching process 失效
    制造包括时间选择性蚀刻工艺的半导体器件的方法

    公开(公告)号：US06756312B2

    公开(公告)日：2004-06-29

    申请号：US09934453

    申请日：2001-08-22

    申请人： Kenji Shintani ,  Mutsumi Tsuda ,  Masakazu Taki ,  Hiroki Ootera

    发明人： Kenji Shintani ,  Mutsumi Tsuda ,  Masakazu Taki ,  Hiroki Ootera

    IPC分类号： H01L21302

    CPC分类号： C23F11/04 ,  C09K13/08 ,  H01L21/28035 ,  H01L21/32135

    摘要： In a wafer treatment apparatus, a hydrofluoric acid gas supply pipe and an evacuation pipe are connected to a chamber storing a wafer for performing prescribed treatment. A control part is provided for controlling supply of hydrofluoric acid gas. The control part sets a time for supplying the hydrofluoric acid gas into the chamber to be longer than a time up to starting of etching of a reaction product and shorter than a time up to starting of etching of a gate insulator film. Thus, only the reaction product can be substantially etched without etching the gate insulator film.

    摘要翻译： 在晶片处理装置中，将氢氟酸气体供给管和排气管连接到存储用于进行规定处理的晶片的室。 提供控制部件用于控制氢氟酸气体的供应。 控制部分设置用于将氢氟酸气体供应到室中的时间比直到开始蚀刻反应产物的时间长，并且短于开始蚀刻栅极绝缘膜的时间。 因此，只有反应产物可以被基本上蚀刻而不蚀刻栅极绝缘膜。

    Apparatus for forming thin film and method of manufacturing semiconductor film
    7.
    发明授权
    Apparatus for forming thin film and method of manufacturing semiconductor film 有权
    用于形成薄膜的装置和制造半导体膜的方法

    公开(公告)号：US08053254B2

    公开(公告)日：2011-11-08

    申请号：US12994343

    申请日：2009-05-14

    申请人： Mutsumi Tsuda ,  Masakazu Taki

    发明人： Mutsumi Tsuda ,  Masakazu Taki

    IPC分类号： H01L21/00

    CPC分类号： H01L21/0262 ,  C23C16/24 ,  C23C16/45523 ,  C23C16/515 ,  H01L21/02532 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

    摘要： An apparatus including a vacuum chamber having a substrate holding unit that holds a substrate and a plasma electrode facing the substrate, a first gas supply unit that supplies a H2 gas to the vacuum chamber at a constant flow rate, a second gas supply unit that opens or closes a valve to turn on or off the supply of a SiH4 gas, a high-frequency power source that applies a high frequency voltage to the plasma electrode, a shield box that is connected to a ground so as to surround the plasma electrode outside the vacuum chamber, and a control unit that controls the valve such that the SiH4 gas is periodically supplied to the vacuum chamber and modulates the amplitude of high frequency power in synchronization with the opening or closing of the valve, and the valve is provided in the shield box.

    摘要翻译： 一种包括具有保持基板的基板保持单元和面向基板的等离子体电极的真空室的设备，以恒定流量向真空室供给H2气体的第一气体供给单元，打开的第二气体供给单元 或关闭阀门以接通或关闭向等离子体电极施加高频电压的高频电源的SiH 4气体的供给，连接到地面以围绕等离子体电极外部的屏蔽盒 真空室和控制单元，其控制阀，使得SiH4气体周期性地供给到真空室，并且与阀的打开或关闭同步地调制高频功率的振幅，并且阀设置在 屏蔽盒。

    MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    8.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
    半导体集成电路器件的制造方法

    公开(公告)号：US20090035945A1

    公开(公告)日：2009-02-05

    申请号：US12180514

    申请日：2008-07-25

    申请人： Kazuyuki FUJII ,  Minoru Hanazaki ,  Gen Kawaharada ,  Masakazu Taki ,  Mutsumi Tsuda

    发明人： Kazuyuki FUJII ,  Minoru Hanazaki ,  Gen Kawaharada ,  Masakazu Taki ,  Mutsumi Tsuda

    IPC分类号： H01L21/30 ,  C25F5/00

    CPC分类号： H01L21/67069 ,  C23C16/4405 ,  C23C16/52 ,  H01J37/32357 ,  H01J37/32862 ,  H01J37/32963

    摘要： In remote plasma cleaning, it is difficult to locally excite a plasma because the condition is not suitable for plasma excitation different from that at the time of film formation and a method using light has a problem of fogginess of a detection window that cannot be avoided in a CVD process and is not suitable for a mass production process. In order to solve these problems, the outline of the present invention is a manufacturing method of a semiconductor integrated circuit device in which a step of depositing a desired film by exciting a reaction gas using a plasma in a reaction chamber and a step of introducing a cleaning gas excited in a remote plasma excitation chamber into the reaction chamber and performing remote plasma cleaning of the reaction chamber in an atmosphere without plasma excitation are repeated, wherein a local plasma is generated in the reaction chamber or a vacuum system for evacuating the reaction chamber by a plasma excitation system of capacitively coupled type and the end point of the remote plasma cleaning is detected by monitoring the electrical characteristic of the plasma.

    摘要翻译： 在远程等离子体清洗中，由于条件不适合与成膜时不同的等离子体激发，因此难以局部激发等离子体，使用光的方法存在无法避免的检测窗的雾化问题 CVD工艺，不适合大批量生产。 为了解决这些问题，本发明的概述是一种半导体集成电路器件的制造方法，其中通过在反应室中使用等离子体激发反应气体来沉积所需的膜的步骤，以及引入 在远程等离子体激发室中被激发到反应室中并且在没有等离子体激发的气氛中进行反应室的远程等离子体清洗的清洁气体被重复，其中在反应室中产生局部等离子体或用于抽空反应室的真空系统 通过电容耦合型等离子体激发系统，通过监测等离子体的电气特性来检测远程等离子体清洗的终点。

    Plasma processor
    9.
    发明授权
    Plasma processor 失效
    等离子处理器

    公开(公告)号：US5146138A

    公开(公告)日：1992-09-08

    申请号：US817650

    申请日：1992-01-07

    申请人： Hiroki Ootera ,  Mutsumi Tsuda

    发明人： Hiroki Ootera ,  Mutsumi Tsuda

    IPC分类号： H01J37/32 ,  H05H1/46

    CPC分类号： H01J37/32293 ,  H01J37/32192 ,  H01J37/32275 ,  H05H1/46

    摘要： A plasma processor comprising a plasma generation portion in which a plasma is generated by electron cyclotron resonance, a source of a right hand polarized microwave and supplying it to the plasma generation portion, and a plasma reaction portion which accommodates a substrate to be processed with the plasma generated in the plasma generation portion. Owing to the production and supply of the right hand polarized microwaves, almost all of the microwaves injected into the plasma generation portion contribute to the generation of the plasma, to increase plasma density and raise processing speed.

    摘要翻译： 一种等离子体处理器，包括等离子体产生部分，其中通过电子回旋共振产生等离子体，右手偏振微波源并将其提供给等离子体产生部分，以及等离子体反应部分，其容纳待处理的基板 在等离子体产生部分产生的等离子体。 由于右手极化微波的生产和供应，注入等离子体产生部分的几乎所有微波有助于产生等离子体，从而提高等离子体密度并提高处理速度。

    Plasma processor
    10.
    发明授权
    Plasma processor 失效

    公开(公告)号：US5115167A

    公开(公告)日：1992-05-19

    申请号：US333042

    申请日：1989-04-04

    申请人： Hiroki Ootera ,  Mutsumi Tsuda

    发明人： Hiroki Ootera ,  Mutsumi Tsuda

    IPC分类号： H01J37/32

    CPC分类号： H01J37/32293 ,  H01J37/32192 ,  H01J37/32275

    摘要： A plasma processor comprising a plasma generation portion in which a plasma is generated by electron cyclotron resonance, a source of a right hand polarized microwave and supplying it to the plasma generation portion, and a plasma reaction portion which accommodates a substrate to be processed with the plasma generated in the plasma generation portion. Owing to the production and supply of the right hand polarized microwaves, almost all of the microwaves injected into the plasma generation portion contribute to the generation of the plasma, to increase plasma density and raise processing speed.