Angular velocity sensor
    21.
    发明授权
    Angular velocity sensor 有权
    角速度传感器

    公开(公告)号:US08549916B2

    公开(公告)日:2013-10-08

    申请号:US13093328

    申请日:2011-04-25

    IPC分类号: G01C19/56

    CPC分类号: G01C19/5747

    摘要: In an angular velocity sensor, a beam portion couples a pair of vibrators with each other and couples each of the vibrators to a substrate to enable the pair of vibrators to be movable in a first direction and a second direction that are perpendicular to each other. The driving portion vibrates the pair of vibrators in opposite phases in the first direction. The detecting portion detects displacement of the pair of vibrators in the second direction as a change in capacitance. The detecting portion includes first and second detecting electrodes. The restricting portion restricts displacement of the pair of vibrators in the second direction based on the change in capacitance. The restricting portion includes first and second restricting electrodes, and an electrode interval between the restricting electrodes is twice a width of the detecting electrodes in the second direction.

    摘要翻译: 在角速度传感器中,梁部分将一对振动器彼此连接并将每个振动器耦合到基板,以使得一对振动器能够在彼此垂直的第一方向和第二方向上移动。 驱动部分在第一方向上以相反的相位振动一对振动器。 检测部分检测一对振动器在第二方向上的位移,作为电容的变化。 检测部分包括第一和第二检测电极。 限制部分基于电容的变化来限制一对振动器在第二方向上的位移。 限制部分包括第一和第二限制电极,并且限制电极之间的电极间隔是第二方向上检测电极宽度的两倍。

    Oscillation angular velocity sensor
    22.
    发明授权
    Oscillation angular velocity sensor 有权
    振荡角速度传感器

    公开(公告)号:US08438922B2

    公开(公告)日:2013-05-14

    申请号:US12923123

    申请日:2010-09-02

    IPC分类号: G01C19/56

    CPC分类号: G01C19/5747

    摘要: Each of first and second oscillators includes a detector portion and a driver portion. The detector portion includes a stationary detector electrode and a detector weight, which includes a movable detector electrode opposed to the stationary detector electrode. The driver portion includes a driver weight having a movable driver electrode, which oscillates the detector portion, and a stationary driver electrode opposed to the movable driver electrode. The driver weights of the first and second oscillators are directly connected through a driver joint beam. The detector weights of the first and second oscillators are directly connected through a detector joint beam.

    摘要翻译: 第一和第二振荡器中的每一个包括检测器部分和驱动器部分。 检测器部分包括固定检测器电极和检测器重量,其包括与固定检测器电极相对的可移动检测器电极。 驱动器部分包括具有可移动驱动器电极的驱动器重量,其使检测器部分振荡,以及与可移动驱动器电极相对的固定驱动器电极。 第一和第二振荡器的驱动器重量通过驱动器连接梁直接连接。 第一和第二振荡器的检测器重量通过检测器接头梁直接连接。

    Oscillation angular velocity sensor
    24.
    发明申请
    Oscillation angular velocity sensor 有权
    振荡角速度传感器

    公开(公告)号:US20110056292A1

    公开(公告)日:2011-03-10

    申请号:US12923123

    申请日:2010-09-02

    IPC分类号: G01C19/56

    CPC分类号: G01C19/5747

    摘要: Each of first and second oscillators includes a detector portion and a driver portion. The detector portion includes a stationary detector electrode and a detector weight, which includes a movable detector electrode opposed to the stationary detector electrode. The driver portion includes a driver weight having a movable driver electrode, which oscillates the detector portion, and a stationary driver electrode opposed to the movable driver electrode. The driver weights of the first and second oscillators are directly connected through a driver joint beam. The detector weights of the first and second oscillators are directly connected through a detector joint beam.

    摘要翻译: 第一和第二振荡器中的每一个包括检测器部分和驱动器部分。 检测器部分包括固定检测器电极和检测器重量,其包括与固定检测器电极相对的可移动检测器电极。 驱动器部分包括具有可移动驱动器电极的驱动器重量,其使检测器部分振荡,以及与可移动驱动器电极相对的固定驱动器电极。 第一和第二振荡器的驱动器重量通过驱动器连接梁直接连接。 第一和第二振荡器的检测器重量通过检测器接头梁直接连接。

    Semiconductor dynamic quantity sensor
    26.
    发明授权
    Semiconductor dynamic quantity sensor 有权
    半导体动量传感器

    公开(公告)号:US07007550B2

    公开(公告)日:2006-03-07

    申请号:US10806278

    申请日:2004-03-23

    IPC分类号: G01P15/10 G01P15/125

    摘要: In a semiconductor dynamic quantity sensor, a mass serving as a weight portion for detecting application of a dynamic quantity is divided into three masses (301, 302, 303) in series. The masses (301, 302, 303) thus divided are connected to one another by connecting beams (CB1, CB2, CB3, CB4). The masses (301, 302, 303) located at both the end portions are supported through beams (B1, B2, B3, B4) by a semiconductor substrate (1) so as to be allowed to be displaced in the direction orthogonal to the connection direction of the masses. The center mass (302) connected to the masses (301, 302, 303) through the connecting beams (CB1, CB2, CB3, CB4) is allowed to be displaced only in the connecting direction of the masses by the connecting beams (CB1, CB2, CB3, CB4).

    摘要翻译: 在半导体动态量传感器中,用作检测动态量的应用的重量部分的质量被串联分成三个质量(301,302,303)。 这样被分割的质量块(301,302,303)通过连接梁(CB 1,CB 2,CB 3,CB 4)相互连接。 位于两个端部的质量块(301,302,303)通过半导体衬底(1)通过光束(B 1,B 2,B 3,B 4)支撑,以便允许其在方向 正交于质量的连接方向。 通过连接梁(CB 1,CB 2,CB 3,CB 4)连接到质量块(301,302,303)的中心质量块(302)仅通过连接件在质量块的连接方向上移位 梁(CB 1,CB 2,CB 3,CB 4)。

    Semiconductor dynamic quantity sensor

    公开(公告)号:US06990864B2

    公开(公告)日:2006-01-31

    申请号:US10298604

    申请日:2002-11-19

    申请人: Minekazu Sakai

    发明人: Minekazu Sakai

    IPC分类号: G01P15/125 G01P9/04

    摘要: A semiconductor dynamic quantity sensor includes a semiconductor substrate that includes a movable electrode, a pair of first fixed electrodes, and a pair of second fixed electrodes. The first and second pairs of first detection capacitances and the first and second pairs of second detection capacitances are formed by the electrodes. The dynamic quantity related to the force applied to the sensor is measured on the basis of the sum of the differential output between the first pair of the first detection capacitances, the differential output between the second pair of the first detection capacitances, the differential output between the first pair of the second detection capacitances, and the differential output between the second pair of the second detection capacitances, when the movable electrode moves along the first direction or the second direction under the force. The sum includes a relatively small amount of noises.

    Capacitive dynamic quantity sensor
    28.
    发明授权
    Capacitive dynamic quantity sensor 失效
    电容动态量传感器

    公开(公告)号:US06841840B2

    公开(公告)日:2005-01-11

    申请号:US10616205

    申请日:2003-07-10

    申请人: Minekazu Sakai

    发明人: Minekazu Sakai

    摘要: A capacitive dynamic quantity sensor includes a substrate, a weight, a movable electrode, an anchor, a fixed electrode, a spring, and a strain buffer. The weight is displaced by a dynamic quantity. The movable electrode is integrated with the weight. The anchor is fixed to the substrate to suspend the weight and the movable electrode above the substrate. The fixed electrode is arranged to face the movable electrode. The displacement of the movable electrode caused in response to the dynamic quantity is detected as a capacitance variation between the electrodes. The spring is located between the anchor and the weight and resiliently deforms in response to the dynamic quantity such that the movable electrode is displaced by a distance corresponding to the dynamic quantity. The strain buffer is located between the anchor and the spring to reduce the influence of a strain generated in the substrate on the spring.

    摘要翻译: 电容动态量传感器包括基板,重物,可动电极,锚固件,固定电极,弹簧和应变缓冲器。 重量由动态数量所取代。 可动电极与重量一体。 锚固件固定到基板上,以将重物和可动电极悬挂在基板上方。 固定电极布置成面对可动电极。 检测到响应于动态量而引起的可移动电极的位移作为电极之间的电容变化。 弹簧位于锚固件和重物之间,并且响应于动态量而弹性变形,使得可移动电极移动与动态量相对应的距离。 应变缓冲器位于锚固件和弹簧之间,以减少在基板上产生的应变对弹簧的影响。

    Semiconductor physical quantity sensor
    30.
    发明授权
    Semiconductor physical quantity sensor 有权
    半导体物理量传感器

    公开(公告)号:US06250165B1

    公开(公告)日:2001-06-26

    申请号:US09239781

    申请日:1999-01-29

    IPC分类号: G01L900

    摘要: A semiconductor physical quantity sensor has a P-type semiconductor substrate and an N-type semiconductor layer formed on a main surface of the P-type semiconductor substrate. A displaceable portion is formed by electrochemically etching the P-type semiconductor substrate from a side of the main surface. At that time, a buried insulation film formed to penetrate the N-type semiconductor layer and to extend into the P-type semiconductor substrate is used as a stopper for the etching. Accordingly, an etched region can be restricted by the buried insulation film, so that the displaceable portion can be precisely formed.

    摘要翻译: 半导体物理量传感器具有P型半导体衬底和形成在P型半导体衬底的主表面上的N型半导体层。 通过从主表面的一侧电化学蚀刻P型半导体衬底形成位移部分。 此时,形成为穿透N型半导体层并延伸到P型半导体衬底中的掩埋绝缘膜用作蚀刻的阻挡层。 因此,可以通过埋入绝缘膜来限制蚀刻区域,从而能够精确地形成位移部。