公开(公告)号：US06276207B1

公开(公告)日：2001-08-21

申请号：US09438293

申请日：1999-11-12

申请人： Minekazu Sakai ,  Yukihiro Takeuchi ,  Inao Toyoda ,  Seiichiro Ishio ,  Toshimasa Yamamoto ,  Eishi Kawasaki ,  Minoru Murata ,  Hiroshi Muto

发明人： Minekazu Sakai ,  Yukihiro Takeuchi ,  Inao Toyoda ,  Seiichiro Ishio ,  Toshimasa Yamamoto ,  Eishi Kawasaki ,  Minoru Murata ,  Hiroshi Muto

IPC分类号： G01P1500

CPC分类号： B81C1/00928 ,  B81B3/0008 ,  B81B3/001 ,  B81B2201/0235 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

摘要： A semiconductor acceleration sensor, which prevents an adhesion of a movable portion to a fixed portion due to an electrostatic force generated during being handled. The acceleration sensor has a sensor portion and a handling portion. The sensor portion has a first semiconductor layer; a movable portion including a weight portion supported to the first semiconductor layer for moving in accordance with an acceleration externally applied thereto and movable electrodes integrally formed with the weight portion; and fixed electrodes having a detection surface confronted to a detection surface of the movable electrodes and supported to the first semiconductor layer. The handling portion is to be contacted during being handled, and is provided at surrounding portion of the sensor portion with a trench interposed therebetween. The sensor portion is electrically insulated from the handling portion by the trench.

摘要翻译： 一种半导体加速度传感器，其防止由于在处理期间产生的静电力而将可动部分粘附到固定部分。 加速度传感器具有传感器部分和处理部分。 传感器部分具有第一半导体层; 可移动部分，包括支撑到第一半导体层的重量部分，用于根据向外施加的加速度以及与重物部分整体形成的可动电极; 以及固定电极，其具有与可动电极的检测面相对的支撑于第一半导体层的检测面。 处理部分在处理时被接触，并且在传感器部分的周围部分处设置有介于其间的沟槽。 传感器部分通过沟槽与处理部分电绝缘。

公开(公告)号：US06199430B1

公开(公告)日：2001-03-13

申请号：US09241137

申请日：1999-02-02

申请人： Kazuhiko Kano ,  Koji Hattori ,  Yoshinori Ohtsuka ,  Makiko Sugiura ,  Minekazu Sakai ,  Inao Toyoda ,  Yasutoshi Suzuki ,  Seiichiro Ishio ,  Minoru Murata

发明人： Kazuhiko Kano ,  Koji Hattori ,  Yoshinori Ohtsuka ,  Makiko Sugiura ,  Minekazu Sakai ,  Inao Toyoda ,  Yasutoshi Suzuki ,  Seiichiro Ishio ,  Minoru Murata

IPC分类号： G01P15125

CPC分类号： B81B7/0006 ,  B81B2201/0235 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/135 ,  G01P15/18 ,  G01P2015/0817 ,  G01P2015/0828 ,  G01V1/181 ,  H01H1/0036

摘要： An acceleration sensor has a ring-shaped movable electrode connected to an anchor part via beams and a fixed electrode facing the ring-shaped movable electrode defining a specific interval, which are disposed on a substrate. The movable electrode is displaced by acceleration approximately in parallel to the substrate and contacts the fixed electrode, so that the acceleration is detected. The fixed electrode is divided into a detecting fixed electrode for contacting the movable electrode and a sensitivity controlling fixed electrode insulated from the detecting fixed electrode. Accordingly, potential differences between the movable electrode and the detecting fixed electrode and between the movable electrode and the sensitivity controlling fixed electrode are independently controlled to control sensitivity of acceleration.

摘要翻译： 加速度传感器具有环形可动电极，其经由梁和固定电极连接到锚定部分，固定电极面向限定特定间隔的环形可动电极，该固定电极设置在基板上。 可移动电极通过与基板大致平行的加速移位，并与固定电极接触，从而检测加速度。 固定电极被分成用于接触可动电极的检测固定电极和与检测固定电极绝缘的灵敏度控制固定电极。 因此，独立地控制可动电极和检测用固定电极之间以及可动电极与灵敏度控制固定电极之间的电位差，以控制加速度的灵敏度。

公开(公告)号：US06388279B1

公开(公告)日：2002-05-14

申请号：US09095131

申请日：1998-06-10

申请人： Minekazu Sakai ,  Toshimasa Yamamoto ,  Yasutoshi Suzuki ,  Kenichi Yokoyama ,  Masakazu Terada ,  Eishi Kawasaki ,  Inao Toyoda

发明人： Minekazu Sakai ,  Toshimasa Yamamoto ,  Yasutoshi Suzuki ,  Kenichi Yokoyama ,  Masakazu Terada ,  Eishi Kawasaki ,  Inao Toyoda

IPC分类号： H01L2720

CPC分类号： G01L9/0054 ,  B81C1/00357 ,  B81C2201/019 ,  G01L9/0042

摘要： In the method for manufacturing a semiconductor substrate, a concavity and a connecting hole for connecting the concavity to the outside are formed on a lower face side of a first substrate, and the first substrate is laminated with a second substrate in an atmosphere at atmospheric pressure. A diaphragm is formed by thinning the first substrate from its upper face by polishing. A sealing hole reaching to the connecting hole is formed from the upper face of the first substrate. An oxide film is formed in the sealing hole in a vacuum, whereby the connecting hole is sealed while the pressure of the pressure reference chamber is reduced to a vacuum. In this way, since the pressure reference chamber is pressure-reduced in a final stage, the diaphragm can be prevented from deforming due to pressure difference during polishing.

摘要翻译： 在半导体衬底的制造方法中，在第一衬底的下表面上形成用于将凹部连接到外部的凹部和连接孔，并且将第一衬底与大气压的气氛中的第二衬底层叠 。 通过抛光使第一基板从其上表面变薄而形成隔膜。 从第一基板的上表面形成到达连接孔的密封孔。 在真空中在密封孔中形成氧化膜，由此在压力基准室的压力降低到真空的同时密封连接孔。 以这种方式，由于压力基准室在最终阶段被减压，所以可以防止由于研磨过程中的压力差导致的隔膜变形。

公开(公告)号：US6151966A

公开(公告)日：2000-11-28

申请号：US304849

申请日：1999-05-05

申请人： Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Seiji Fujino ,  Tsuyoshi Fukada ,  Hiroshige Sugito ,  Minoru Murata ,  Hiroshi Muto ,  Hirofumi Higuchi ,  Kenichi Ao

发明人： Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Seiji Fujino ,  Tsuyoshi Fukada ,  Hiroshige Sugito ,  Minoru Murata ,  Hiroshi Muto ,  Hirofumi Higuchi ,  Kenichi Ao

IPC分类号： G01P15/08 ,  G01P15/125 ,  H01L29/84 ,  G01L1/00

CPC分类号： G01P15/125 ,  G01P15/0802 ,  G01P2015/0814

摘要： A semiconductor accelerometer device is formed on an SOI substrate by micro-machining. A movable unit is supported at both ends, and a weight portion is movable in response to acceleration exerted in the detection direction. A movable electrode is formed in a comb shape integrally with the weight portion. A pair of fixed electrodes in a comb shape are cantilevered and interleaved with the movable electrode to face the movable electrode. A plurality of through holes is provided in the electrodes so that the electrodes have Rahmen structure which is a series of rectangular frames. This structure reduces the weight of each electrode while increasing the strength against twist force. The electrodes are less likely from breaking in response to an acceleration exerted in a direction perpendicular to the normal detection direction because of reduced weight.

摘要翻译： 通过微加工在SOI衬底上形成半导体加速度计装置。 可移动单元被支撑在两端，并且重量部分可响应于沿检测方向施加的加速度而移动。 可动电极与配重部一体地形成为梳形。 一对梳状的固定电极是悬臂式的，与可动电极交错而面对可动电极。 多个通孔设置在电极中，使得电极具有Rahmen结构，其是一系列矩形框架。 这种结构减小了每个电极的重量，同时增加了抗扭力的强度。 由于重量减轻，电极响应于垂直于正常检测方向的方向的加速度而不太可能破裂。

公开(公告)号：US06287885B1

公开(公告)日：2001-09-11

申请号：US09306381

申请日：1999-05-06

申请人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Masakazu Terada ,  Hiroshige Sugito ,  Masakazu Kanosue ,  Shinji Yoshihara ,  Shoji Ozoe ,  Seiji Fujino ,  Minekazu Sakai ,  Minoru Murata ,  Yukihiro Takeuchi ,  Seiki Aoyama ,  Toshio Yamamoto ,  Kazushi Asami

发明人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Masakazu Terada ,  Hiroshige Sugito ,  Masakazu Kanosue ,  Shinji Yoshihara ,  Shoji Ozoe ,  Seiji Fujino ,  Minekazu Sakai ,  Minoru Murata ,  Yukihiro Takeuchi ,  Seiki Aoyama ,  Toshio Yamamoto ,  Kazushi Asami

IPC分类号： H01L21302

CPC分类号： B81C1/00936 ,  B81B3/0005 ,  B81B2201/0235 ,  B81B2201/025 ,  B81B2203/0136 ,  B81B2203/033 ,  B81B2203/04 ,  B81C2201/0132 ,  B81C2201/053 ,  B81C2201/112 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/084

摘要： In a method for manufacturing a semiconductor acceleration sensor, a movable portion including a mass portion and movable electrodes is formed in a single crystal silicon thin film provided on a silicon wafer through an insulation film by etching both the single crystal silicon thin film and the silicon wafer. In this case, the movable portion is finally defined at a movable portion defining step that is carried out in a vapor phase atmosphere. Accordingly, the movable portion is prevented from sticking to other regions due to etchant during the manufacture thereof.

公开(公告)号：US06250165B1

公开(公告)日：2001-06-26

申请号：US09239781

申请日：1999-01-29

申请人： Minekazu Sakai ,  Inao Toyoda ,  Minoru Murata

发明人： Minekazu Sakai ,  Inao Toyoda ,  Minoru Murata

IPC分类号： G01L900

CPC分类号： B81C1/00158 ,  B81C2201/014 ,  G01L9/0042 ,  G01P15/0802 ,  G01P2015/0814

摘要： A semiconductor physical quantity sensor has a P-type semiconductor substrate and an N-type semiconductor layer formed on a main surface of the P-type semiconductor substrate. A displaceable portion is formed by electrochemically etching the P-type semiconductor substrate from a side of the main surface. At that time, a buried insulation film formed to penetrate the N-type semiconductor layer and to extend into the P-type semiconductor substrate is used as a stopper for the etching. Accordingly, an etched region can be restricted by the buried insulation film, so that the displaceable portion can be precisely formed.

摘要翻译： 半导体物理量传感器具有P型半导体衬底和形成在P型半导体衬底的主表面上的N型半导体层。 通过从主表面的一侧电化学蚀刻P型半导体衬底形成位移部分。 此时，形成为穿透N型半导体层并延伸到P型半导体衬底中的掩埋绝缘膜用作蚀刻的阻挡层。 因此，可以通过埋入绝缘膜来限制蚀刻区域，从而能够精确地形成位移部。

公开(公告)号：US06753201B2

公开(公告)日：2004-06-22

申请号：US10154784

申请日：2002-05-28

申请人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

发明人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

IPC分类号： H01L2100

CPC分类号： B81C1/00936 ,  B81B2203/0136 ,  B81C1/0019 ,  B81C1/00531 ,  B81C2201/0132 ,  G01P2015/0814 ,  H01L21/76232 ,  H01L21/76264 ,  H01L21/76283

摘要： A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.

摘要翻译： 提供一种制造半导体器件的方法。 使用具有按顺序层叠的第一硅层，氧化物层和第二硅层的SOI（绝缘体上硅）基板来制造器件。 在形成从第二硅层到达氧化物层的沟槽之后，进行干蚀刻，从而允许首先将位于沟槽底部的氧化物层充电。 该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。 去除这样的部件，形成可动部分。 例如，中和电荷的离子被施加到沟槽中，使得电荷从带电的可移动电极及其带电的周围区域中去除。 拆卸电荷可防止可动部分粘附到其周围部分。

公开(公告)号：US06906394B2

公开(公告)日：2005-06-14

申请号：US10448277

申请日：2003-05-30

申请人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

发明人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

IPC分类号： G01P15/125 ,  B81B3/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/762 ,  H01L29/84 ,  H01L27/01

CPC分类号： B81C1/00936 ,  B81B2203/0136 ,  B81C1/0019 ,  B81C1/00531 ,  B81C2201/0132 ,  G01P2015/0814 ,  H01L21/76232 ,  H01L21/76264 ,  H01L21/76283

摘要： A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.

摘要翻译： 提供一种制造半导体器件的方法。 使用具有按顺序层叠的第一硅层，氧化物层和第二硅层的SOI（绝缘体上硅）基板来制造器件。 在形成从第二硅层到达氧化物层的沟槽之后，进行干蚀刻，从而允许首先将位于沟槽底部的氧化物层充电。 该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。 去除这样的部件，形成可动部分。 例如，中和电荷的离子被施加到沟槽中，使得电荷从带电的可移动电极及其带电的周围区域中去除。 拆卸电荷可防止可动部分粘附到其周围部分。

公开(公告)号：US06423563B2

公开(公告)日：2002-07-23

申请号：US09861535

申请日：2001-05-22

申请人： Tsuyoshi Fukada ,  Minekazu Sakai ,  Minoru Murata ,  Yukihiro Takeuchi ,  Seiki Aoyama

发明人： Tsuyoshi Fukada ,  Minekazu Sakai ,  Minoru Murata ,  Yukihiro Takeuchi ,  Seiki Aoyama

IPC分类号： H01L2984

CPC分类号： B81C1/00936 ,  B81B3/0005 ,  B81B2201/0235 ,  B81B2201/025 ,  B81B2203/0136 ,  B81B2203/033 ,  B81B2203/04 ,  B81C2201/0132 ,  B81C2201/053 ,  B81C2201/112 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/084

摘要： A semiconductor dynamic quantity sensor includes a semiconductor support substrate having a specific resistance equal to or less than 3&OHgr; cm. An insulation film is provided on the support substrate and a semiconductor layer is provided on the support substrate with the insulation film interposed therebetween. The semiconductor layer has a specific resistance equal to or less than 3&OHgr; cm. A movable electrode is provided in the semiconductor layer to be displaced according to a dynamic quantity acting thereto. A fixed electrode is fixedly provided in the semiconductor layer to make a specific gap with the movable electrode and to from a capacitor with the movable electrode. The capacitor has a capacity that changes in response to displacement of the movable electrode to detect the dynamic quantity.

摘要翻译： 半导体动态量传感器包括具有等于或小于3OMEGA cm的电阻率的半导体支撑衬底。 绝缘膜设置在支撑基板上，半导体层设置在支撑基板上，绝缘膜位于支撑基板之间。 半导体层的电阻率等于或小于3OMEGA cm。 可移动电极设置在半导体层中，以根据作用于其的动态量而移位。 在半导体层中固定设置固定电极，与可动电极和可动电极的电容器形成特定的间隙。 电容器具有响应于可动电极的位移而变化以检测动态量的容量。

公开(公告)号：US6065341A

公开(公告)日：2000-05-23

申请号：US209414

申请日：1998-12-11

申请人： Seiichiro Ishio ,  Minekazu Sakai ,  Kenichi Ao

发明人： Seiichiro Ishio ,  Minekazu Sakai ,  Kenichi Ao

IPC分类号： G01P15/08 ,  G01P15/125

CPC分类号： B81B3/0051 ,  G01P15/0802 ,  G01P15/125 ,  B81B2201/0235 ,  G01P2015/0814

摘要： A mass portion of a movable portion is supported by an anchor portion protruding from a substrate through a beam portion. A stopper portion fixed to the substrate through another anchor portion is disposed on a side opposite to the mass portion with respect to the beam portion to define a gap with the beam portion. The stopper portion is electrically connected to the beam portion through the anchor portions. Accordingly, the movable portion is restricted from being displaced in a direction generally parallel to a surface of the substrate, and a movable electrode of the movable portion is prevented from being attached to the fixed electrode.

摘要翻译： 可移动部分的质量部分由通过梁部分从基底突出的锚固部分支撑。 通过另一个锚定部分固定到基板的止动部分相对于梁部分设置在与质量部分相对的一侧上以限定与梁部分的间隙。 止动部分通过锚定部电连接到梁部分。 因此，可动部被限制在大致平行于基板的表面的方向上移动，并且防止可动部的可动电极附着到固定电极。