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    Semiconductor substrate manufacturing method, semiconductor pressure sensor and manufacturing method thereof
    2.
    发明授权
    Semiconductor substrate manufacturing method, semiconductor pressure sensor and manufacturing method thereof 失效
    半导体衬底制造方法，半导体压力传感器及其制造方法

    公开(公告)号：US06388279B1

    公开(公告)日：2002-05-14

    申请号：US09095131

    申请日：1998-06-10

    申请人： Minekazu Sakai ,  Toshimasa Yamamoto ,  Yasutoshi Suzuki ,  Kenichi Yokoyama ,  Masakazu Terada ,  Eishi Kawasaki ,  Inao Toyoda

    发明人： Minekazu Sakai ,  Toshimasa Yamamoto ,  Yasutoshi Suzuki ,  Kenichi Yokoyama ,  Masakazu Terada ,  Eishi Kawasaki ,  Inao Toyoda

    IPC分类号： H01L2720

    CPC分类号： G01L9/0054 ,  B81C1/00357 ,  B81C2201/019 ,  G01L9/0042

    摘要： In the method for manufacturing a semiconductor substrate, a concavity and a connecting hole for connecting the concavity to the outside are formed on a lower face side of a first substrate, and the first substrate is laminated with a second substrate in an atmosphere at atmospheric pressure. A diaphragm is formed by thinning the first substrate from its upper face by polishing. A sealing hole reaching to the connecting hole is formed from the upper face of the first substrate. An oxide film is formed in the sealing hole in a vacuum, whereby the connecting hole is sealed while the pressure of the pressure reference chamber is reduced to a vacuum. In this way, since the pressure reference chamber is pressure-reduced in a final stage, the diaphragm can be prevented from deforming due to pressure difference during polishing.

    摘要翻译： 在半导体衬底的制造方法中，在第一衬底的下表面上形成用于将凹部连接到外部的凹部和连接孔，并且将第一衬底与大气压的气氛中的第二衬底层叠 。 通过抛光使第一基板从其上表面变薄而形成隔膜。 从第一基板的上表面形成到达连接孔的密封孔。 在真空中在密封孔中形成氧化膜，由此在压力基准室的压力降低到真空的同时密封连接孔。 以这种方式，由于压力基准室在最终阶段被减压，所以可以防止由于研磨过程中的压力差导致的隔膜变形。

    Semiconductor sensor having a diffused resistor
    3.
    发明授权
    Semiconductor sensor having a diffused resistor 失效
    具有扩散电阻器的半导体传感器

    公开(公告)号：US06933582B2

    公开(公告)日：2005-08-23

    申请号：US10461336

    申请日：2003-06-16

    申请人： Seiichiro Ishio ,  Eishi Kawasaki

    发明人： Seiichiro Ishio ,  Eishi Kawasaki

    IPC分类号： G01L9/00 ,  H01L29/84 ,  H01L29/8605 ,  H01L29/82

    CPC分类号： G01L9/0054 ,  H01L29/8605

    摘要： A semiconductor sensor includes a P-type semiconductor substrate having a N-type semiconductor layer disposed on one surface of the substrate and a P-type diffused resistor disposed in the N-type semiconductor layer. A first electric voltage is applied to the N-type semiconductor layer, a second electric voltage is applied to the substrate, a third electric voltage is applied to the P-type diffused resistor. The first electric voltage is higher than the second and third electric voltages. The sensor ensures stable operation against electric leakage and high noise protection because two depletion layers are formed.

    摘要翻译： 半导体传感器包括具有设置在基板的一个表面上的N型半导体层的P型半导体基板和设置在N型半导体层中的P型扩散电阻器。 向N型半导体层施加第一电压，向基板施加第二电压，向P型扩散电阻施加第三电压。 第一电压高于第二和第三电压。 该传感器确保了稳定的操作，防止漏电和高噪声保护，因为形成了两个耗尽层。

    Semiconductor pressure sensor
    4.
    发明授权
    Semiconductor pressure sensor 失效
    半导体压力传感器

    公开(公告)号：US4930353A

    公开(公告)日：1990-06-05

    申请号：US388022

    申请日：1989-07-31

    申请人： Yukihiro Kato ,  Eishi Kawasaki ,  Masahito Mizukoshi

    发明人： Yukihiro Kato ,  Eishi Kawasaki ,  Masahito Mizukoshi

    IPC分类号： G01L9/00 ,  G01L9/06 ,  G01L19/00 ,  G01L19/04

    CPC分类号： G01L19/147 ,  G01L19/0023 ,  G01L19/0084 ,  G01L19/0092 ,  G01L19/04 ,  G01L19/143 ,  G01L19/148 ,  G01L9/0054 ,  G01L9/0055 ,  G01L9/045 ,  G01L9/06

    摘要： In an improved semiconductor pressure sensor adapted to detect a pressure of a measured medium such as a refrigerant used in a refrigerating cycle for an automobile, there are provided a sensing portion composed of a glass support plate and a silicon substrate disposed thereon and provided with a diaphragm portion displaceable in accordance to a pressure of the measured medium at such a position of the silicon substrate as to be brought into contact with the measured medium, a detecting means disposed within the sensing portion so as to detect a displacement of the diaphragm portion, a housing having an interior space including an accommodation portion for accommodating the sensing portion and having at least a predetermined portion of the accommodation portion made up of metal as opposed to the sensing portion, and a solder glass provided between the predetermined portion of the housing and a predetermined portion of the sensing portion so as to hermetically seal the interior space of the housing with respect to said measured medium. In another aspect of the invention, the housing holds the sensing portion in such a projecting manner as to enable the diaphragm portion to be put into the flow of the measured medium.

    Physical quantity sensor
    5.
    发明授权
    Physical quantity sensor 有权
    物理量传感器

    公开(公告)号：US07950288B2

    公开(公告)日：2011-05-31

    申请号：US12385225

    申请日：2009-04-02

    申请人： Tetsuo Fujii ,  Eishi Kawasaki

    发明人： Tetsuo Fujii ,  Eishi Kawasaki

    IPC分类号： G01R27/26

    CPC分类号： G01L9/0042 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2207/07 ,  B81C2203/0118 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/125 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A physical quantity sensor for detecting a physical quantity includes: a first substrate having a first physical quantity detection element; a second substrate having a second physical quantity detection element, wherein the second substrate contacts the first substrate; and an accommodation space disposed between the first substrate and the second substrate. The first physical quantity detection element is disposed in the accommodation space. The first physical quantity detection element is protected with the first substrate and the second substrate since the first physical quantity detection element is sealed in the accommodation space.

    摘要翻译： 用于检测物理量的物理量传感器包括：具有第一物理量检测元件的第一基板; 具有第二物理量检测元件的第二基板，其中所述第二基板接触所述第一基板; 以及设置在第一基板和第二基板之间的容纳空间。 第一物理量检测元件设置在容纳空间中。 第一物理量检测元件被第一基板和第二基板保护，因为第一物理量检测元件被密封在容纳空间中。

    Physical quantity sensor
    7.
    发明授权
    Physical quantity sensor 有权
    物理量传感器

    公开(公告)号：US07540199B2

    公开(公告)日：2009-06-02

    申请号：US11808774

    申请日：2007-06-12

    申请人： Tetsuo Fujii ,  Eishi Kawasaki

    发明人： Tetsuo Fujii ,  Eishi Kawasaki

    IPC分类号： G01R27/26

    CPC分类号： G01L9/0042 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2207/07 ,  B81C2203/0118 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/125 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A physical quantity sensor for detecting a physical quantity includes: a first substrate having a first physical quantity detection element; a second substrate having a second physical quantity detection element, wherein the second substrate contacts the first substrate; and an accommodation space disposed between the first substrate and the second substrate. The first physical quantity detection element is disposed in the accommodation space. The first physical quantity detection element is protected with the first substrate and the second substrate since the first physical quantity detection element is sealed in the accommodation space.

    摘要翻译： 用于检测物理量的物理量传感器包括：具有第一物理量检测元件的第一基板; 具有第二物理量检测元件的第二基板，其中所述第二基板接触所述第一基板; 以及设置在第一基板和第二基板之间的容纳空间。 第一物理量检测元件设置在容纳空间中。 第一物理量检测元件被第一基板和第二基板保护，因为第一物理量检测元件被密封在容纳空间中。

    Semiconductor sensor and method of manufacturing the same
    8.
    发明申请
    Semiconductor sensor and method of manufacturing the same 有权
    半导体传感器及其制造方法

    公开(公告)号：US20080202249A1

    公开(公告)日：2008-08-28

    申请号：US12010758

    申请日：2008-01-29

    申请人： Hisanori Yokura ,  Yoshihiko Isobe ,  Eishi Kawasaki

    发明人： Hisanori Yokura ,  Yoshihiko Isobe ,  Eishi Kawasaki

    IPC分类号： G01L9/04 ,  H01C17/28

    CPC分类号： G01L9/0055 ,  G01K5/52 ,  G01L1/2293 ,  H01L2224/02166 ,  Y10T29/49103

    摘要： A semiconductor pressure sensing apparatus includes a metallic stem having a diaphragm and a semiconductor sensor bonded to the diaphragm. The semiconductor sensor includes a gauge section and first and second bonding pads. The gauge section is configured to be deformed according to a deformation of the diaphragm. The first and second bonding pads are respectively connected to different positions of the gauge section so that an electrical resistance between the first and second bonding pads can change with a change in the deformation of the diaphragm. The gauge section is formed to a semiconductor layer of an silicon-on-insulator substrate. The semiconductor sensor is directly bonded to the diaphragm by activating contact surfaces between the semiconductor sensor and the diaphragm.

    摘要翻译： 一种半导体压力感测装置，包括具有隔膜的金属杆和结合到隔膜的半导体传感器。 半导体传感器包括测量部分和第一和第二接合焊盘。 仪表部分被配置为根据隔膜的变形而变形。 第一和第二接合焊盘分别连接到量规部分的不同位置，使得第一和第二接合焊盘之间的电阻随着隔膜变形的改变而改变。 测量部分形成为绝缘体上硅衬底的半导体层。 通过激活半导体传感器和隔膜之间的接触表面，半导体传感器直接接合到隔膜。

    Micro-heater and airflow sensor using the same
    10.
    发明授权
    Micro-heater and airflow sensor using the same 有权
    微加热器和气流传感器使用相同

    公开(公告)号：US06450025B1

    公开(公告)日：2002-09-17

    申请号：US09499020

    申请日：2000-02-04

    申请人： Hiroyuki Wado ,  Yoshinori Otsuka ,  Eishi Kawasaki

    发明人： Hiroyuki Wado ,  Yoshinori Otsuka ,  Eishi Kawasaki

    IPC分类号： G01F168

    CPC分类号： B81B3/0072 ,  B81B2201/0292 ,  B81C2201/0169 ,  B81C2201/019 ,  G01F1/6845 ,  H05B3/12 ,  H05B3/28 ,  H05B2203/013 ,  H05B2203/017

    摘要： An airflow sensor including a micro-heater having a film structure, which can reduce a warpage of the film structure even when a thick ness of the film structure to improve a mechanical strength thereof. An airflow sensor is provided with a monocrystalline silicon substrate having a hollow portion therein; a thin film heater portion as a micro-heater arranged above the hollow portion; and a temperature sensor. The thin film heater portion has a laminated structure of a lower thin film, a heater layer, and an upper thin film. The lower and the upper thin film respectively have a tensile stress film and a compressive stress film laminated with the tensile stress film, and are symmetry laminated with respect to the heater layer. The tensile stress film is made up of a Si3N4 film having a great moisture-proof characteristic; and the compressive stress film is made up of a SiO2 film having a great adhesion. Since these stress films cancel their internal stress each other, the internal stress can be released, and a warpage moment can be cancelled so that a warpage of the whole film structure can be restricted. Therefore, the mechanical strength can be improved even if the thickness of the film is increased.

    摘要翻译： 一种气流传感器，包括具有膜结构的微加热器，即使当膜结构的厚度提高时，也能够减小膜结构的翘曲，从而提高其机械强度。 气流传感器设置有在其中具有中空部分的单晶硅衬底; 作为布置在中空部分上方的微加热器的薄膜加热器部分; 和温度传感器。 薄膜加热器部分具有下薄膜，加热器层和上薄膜的层压结构。 下薄膜和上薄膜分别具有拉伸应力膜和与拉伸应力膜层压的压缩应力膜，并且相对于加热器层对称地层压。 拉伸应力膜由具有良好防潮特性的Si 3 N 4膜构成; 并且压应力膜由具有很大粘附性的SiO 2膜构成。 由于这些应力膜相互抵消其内部应力，因此可以解除内部应力，并且可以消除翘曲力矩，从而可以限制整个膜结构的翘曲。 因此，即使膜的厚度增加，也可以提高机械强度。