利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

57 条记录 (耗时 0.033 秒)

    Method of manufacturing semiconductor device capable of sensing dynamic quantity
    4.
    发明授权
    Method of manufacturing semiconductor device capable of sensing dynamic quantity 有权
    能够感测动态量的半导体器件的制造方法

    公开(公告)号：US06753201B2

    公开(公告)日：2004-06-22

    申请号：US10154784

    申请日：2002-05-28

    申请人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

    发明人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

    IPC分类号： H01L2100

    CPC分类号： B81C1/00936 ,  B81B2203/0136 ,  B81C1/0019 ,  B81C1/00531 ,  B81C2201/0132 ,  G01P2015/0814 ,  H01L21/76232 ,  H01L21/76264 ,  H01L21/76283

    摘要： A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.

    摘要翻译： 提供一种制造半导体器件的方法。 使用具有按顺序层叠的第一硅层，氧化物层和第二硅层的SOI（绝缘体上硅）基板来制造器件。 在形成从第二硅层到达氧化物层的沟槽之后，进行干蚀刻，从而允许首先将位于沟槽底部的氧化物层充电。 该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。 去除这样的部件，形成可动部分。 例如，中和电荷的离子被施加到沟槽中，使得电荷从带电的可移动电极及其带电的周围区域中去除。 拆卸电荷可防止可动部分粘附到其周围部分。

    Flow sensor
    7.
    发明授权
    Flow sensor 有权
    流量传感器

    公开(公告)号：US06701782B2

    公开(公告)日：2004-03-09

    申请号：US10199116

    申请日：2002-07-22

    申请人： Takao Iwaki ,  Toshimasa Yamamoto ,  Hiroyuki Wado ,  Yukihiro Takeuchi

    发明人： Takao Iwaki ,  Toshimasa Yamamoto ,  Hiroyuki Wado ,  Yukihiro Takeuchi

    IPC分类号： G01F168

    CPC分类号： G01F1/692

    摘要： A flow sensor, which includes a diaphragm, is made such that the diaphragm is flat or outwardly deformed to allow fluid flow rate measurements at higher flow rates. The diaphragm is made of an upper set of insulating films, electric devices, and a lower set of insulating films. The component layers of the diaphragm are formed such that the average stress in the upper set of insulating films is more compressive than the average stress in the lower set of insulating films.

    摘要翻译： 包括隔膜的流量传感器被制成使得隔膜是平坦的或向外变形的，以允许在较高流速下进行流体流速测量。 隔膜由上一组绝缘膜，电气设备和下一组绝缘膜制成。 隔膜的部件层形成为使得上部绝缘膜中的平均应力比下部绝缘膜中的平均应力更大的压缩。

    Semiconductor physical quantity sensor
    8.
    发明授权
    Semiconductor physical quantity sensor 失效
    半导体物理量传感器

    公开(公告)号：US5987989A

    公开(公告)日：1999-11-23

    申请号：US795402

    申请日：1997-02-05

    申请人： Toshimasa Yamamoto ,  Kenichi Ao ,  Yukihiro Takeuchi

    发明人： Toshimasa Yamamoto ,  Kenichi Ao ,  Yukihiro Takeuchi

    IPC分类号： G01P15/125 ,  B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  G01C19/56 ,  G01P15/00 ,  G01P15/08 ,  G01P15/13 ,  H01L29/84

    CPC分类号： B81B7/0006 ,  G01C19/5719 ,  G01P15/0802 ,  G01P15/131 ,  B81B2201/0235 ,  G01P2015/0814

    摘要： A semiconductor physical quantity sensor includes a substrate and a beam structure having movable electrodes and spacing a given distance from an upper surface of the substrate. First fixed electrodes and second fixed electrodes are fixedly provided on the upper surface of the substrate. Each first fixed electrode faces one side of the corresponding movable electrode, while each second fixed electrode faces the other side of the corresponding movable electrode. A laminated structure of a lower layer insulating film, conductive films and an upper layer insulating film is arranged at an upper portion of the substrate. The conductive layers form a first wiring pattern for the first fixed electrodes, a second wiring pattern for the second fixed electrodes and a lower electrode. The first wiring pattern is electrically connected to the first fixed electrodes via openings formed in the upper layer insulating film and anchors of the first fixed electrodes, respectively. The second wiring pattern is electrically connected to the second fixed electrodes via openings formed in the upper layer insulating film and anchors of the second fixed electrodes, respectively. The lower electrode is electrically connected to the beam structure via an opening formed in the upper layer insulating film and an anchor of the beam structure.

    摘要翻译： 半导体物理量传感器包括基板和具有可移动电极并且与基板的上表面间隔给定距离的光束结构。 第一固定电极和第二固定电极固定地设置在基板的上表面上。 每个第一固定电极面对相应的可动电极的一侧，而每个第二固定电极面对相应的可移动电极的另一侧。 下层绝缘膜，导电膜和上层绝缘膜的层叠结构设置在基板的上部。 导电层形成用于第一固定电极的第一布线图案，第二固定电极的第二布线图案和下电极。 第一布线图案分别经由形成在上层绝缘膜中的开口和第一固定电极的锚固件电连接到第一固定电极。 第二布线图案分别经由形成在上层绝缘膜中的开口和第二固定电极的锚固件电连接到第二固定电极。 下电极通过形成在上层绝缘膜中的开口和梁结构的锚固件而电连接到梁结构。

    Capacitance type physical quantity sensor
    9.
    发明授权
    Capacitance type physical quantity sensor 有权
    电容式物理量传感器

    公开(公告)号：US07201053B2

    公开(公告)日：2007-04-10

    申请号：US10834183

    申请日：2004-04-29

    申请人： Tetsuo Yoshioka ,  Akihiko Teshigahara ,  Junji Ohara ,  Yukihiro Takeuchi ,  Toshimasa Yamamoto ,  Kazuhiko Kano

    发明人： Tetsuo Yoshioka ,  Akihiko Teshigahara ,  Junji Ohara ,  Yukihiro Takeuchi ,  Toshimasa Yamamoto ,  Kazuhiko Kano

    IPC分类号： G01P15/125 ,  G01P9/04

    CPC分类号： G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

    摘要： A capacitance type physical quantity sensor detects physical quantity. The sensor includes a movable portion including a movable electrode and a fixed portion including a fixed electrode. The fixed electrode includes a detection surface facing a detection surface of the movable electrode. The movable electrode is movable toward the fixed electrode in accordance with the physical quantity so that a distance between the detection surfaces is changeable. At least one of the movable and the fixed electrodes includes a groove. The groove is disposed on a top or a bottom of the one of the movable and the fixed electrodes, has a predetermined depth from the top or the bottom, and extends from the detection surface to an opposite surface.

    摘要翻译： 电容式物理量传感器检测物理量。 传感器包括可移动部分，其包括可动电极和包括固定电极的固定部分。 固定电极包括面向可动电极的检测面的检测面。 可移动电极可以根据物理量朝向固定电极移动，使得检测表面之间的距离是可变的。 可移动和固定电极中的至少一个包括凹槽。 凹槽设置在可移动和固定电极中的一个的顶部或底部上，具有从顶部或底部的预定深度，并且从检测表面延伸到相对的表面。

    Semiconductor physical-quantity sensor having a locos oxide film, for sensing a physical quantity such as acceleration, yaw rate, or the like
    10.
    发明授权
    Semiconductor physical-quantity sensor having a locos oxide film, for sensing a physical quantity such as acceleration, yaw rate, or the like 失效
    具有氧化皮膜的半导体物理量传感器，用于感测诸如加速度，偏航角速度等的物理量

    公开(公告)号：US6137150A

    公开(公告)日：2000-10-24

    申请号：US540833

    申请日：1995-10-11

    申请人： Yukihiro Takeuchi ,  Toshimasa Yamamoto ,  Tadashi Hattori

    发明人： Yukihiro Takeuchi ,  Toshimasa Yamamoto ,  Tadashi Hattori

    IPC分类号： G01L1/14 ,  B81B3/00 ,  G01C19/56 ,  G01P15/00 ,  G01P15/08 ,  G01P15/097 ,  G01P15/10 ,  G01P15/12 ,  G01P15/125 ,  G01P15/13 ,  H01L29/84 ,  H01L29/82

    CPC分类号： G01P15/131 ,  G01C19/5719 ,  G01P15/097 ,  G01P15/124 ,  G01P2015/0814

    摘要： The present invention provides a semiconductor physical-quantity sensor which can perform measurement of high accuracy without occurrence of deformation or displacement of a fixed electrode for vibration use even if voltage applied to the fixed electrode for vibration use is changed, and which can increase a dielectric breakdown voltage between the fixed electrode for vibration use and a substrate without varying a thickness of an insulative sacrificial layer or causing sacrificial-layer etching time to be affected. A semiconductor physical-quantity sensor according to the present invention forms an electrode-anchor portion on a sufficiently thick insulation film and causes dielectric breakdown voltage with a semiconductor substrate to be increased. In particular, the sufficiently thick insulation film is given by a LOCOS oxide film formed during sensor detection-circuit fabrication or separation of a diffusion electrode.

    摘要翻译： 本发明提供一种半导体物理量传感器，即使施加到用于振动的固定电极的电压发生变化，也可以进行高精度的测量，而不会发生用于振动的固定电极的变形或位移，并且可以增加电介质 在不改变绝缘牺牲层的厚度的情况下，用于振动使用的固定电极和基板之间的击穿电压或者影响牺牲层蚀刻时间。 根据本发明的半导体物理量传感器在足够厚的绝缘膜上形成电极锚固部分，并且使得与半导体衬底的介电击穿电压增加。 特别地，足够厚的绝缘膜由传感器检测电路制造或扩散电极分离期间形成的LOCOS氧化物膜给出。