公开(公告)号：US06276207B1

公开(公告)日：2001-08-21

申请号：US09438293

申请日：1999-11-12

申请人： Minekazu Sakai ,  Yukihiro Takeuchi ,  Inao Toyoda ,  Seiichiro Ishio ,  Toshimasa Yamamoto ,  Eishi Kawasaki ,  Minoru Murata ,  Hiroshi Muto

发明人： Minekazu Sakai ,  Yukihiro Takeuchi ,  Inao Toyoda ,  Seiichiro Ishio ,  Toshimasa Yamamoto ,  Eishi Kawasaki ,  Minoru Murata ,  Hiroshi Muto

IPC分类号： G01P1500

CPC分类号： B81C1/00928 ,  B81B3/0008 ,  B81B3/001 ,  B81B2201/0235 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

摘要： A semiconductor acceleration sensor, which prevents an adhesion of a movable portion to a fixed portion due to an electrostatic force generated during being handled. The acceleration sensor has a sensor portion and a handling portion. The sensor portion has a first semiconductor layer; a movable portion including a weight portion supported to the first semiconductor layer for moving in accordance with an acceleration externally applied thereto and movable electrodes integrally formed with the weight portion; and fixed electrodes having a detection surface confronted to a detection surface of the movable electrodes and supported to the first semiconductor layer. The handling portion is to be contacted during being handled, and is provided at surrounding portion of the sensor portion with a trench interposed therebetween. The sensor portion is electrically insulated from the handling portion by the trench.

摘要翻译： 一种半导体加速度传感器，其防止由于在处理期间产生的静电力而将可动部分粘附到固定部分。 加速度传感器具有传感器部分和处理部分。 传感器部分具有第一半导体层; 可移动部分，包括支撑到第一半导体层的重量部分，用于根据向外施加的加速度以及与重物部分整体形成的可动电极; 以及固定电极，其具有与可动电极的检测面相对的支撑于第一半导体层的检测面。 处理部分在处理时被接触，并且在传感器部分的周围部分处设置有介于其间的沟槽。 传感器部分通过沟槽与处理部分电绝缘。

公开(公告)号：US06250165B1

公开(公告)日：2001-06-26

申请号：US09239781

申请日：1999-01-29

申请人： Minekazu Sakai ,  Inao Toyoda ,  Minoru Murata

发明人： Minekazu Sakai ,  Inao Toyoda ,  Minoru Murata

IPC分类号： G01L900

CPC分类号： B81C1/00158 ,  B81C2201/014 ,  G01L9/0042 ,  G01P15/0802 ,  G01P2015/0814

摘要： A semiconductor physical quantity sensor has a P-type semiconductor substrate and an N-type semiconductor layer formed on a main surface of the P-type semiconductor substrate. A displaceable portion is formed by electrochemically etching the P-type semiconductor substrate from a side of the main surface. At that time, a buried insulation film formed to penetrate the N-type semiconductor layer and to extend into the P-type semiconductor substrate is used as a stopper for the etching. Accordingly, an etched region can be restricted by the buried insulation film, so that the displaceable portion can be precisely formed.

摘要翻译： 半导体物理量传感器具有P型半导体衬底和形成在P型半导体衬底的主表面上的N型半导体层。 通过从主表面的一侧电化学蚀刻P型半导体衬底形成位移部分。 此时，形成为穿透N型半导体层并延伸到P型半导体衬底中的掩埋绝缘膜用作蚀刻的阻挡层。 因此，可以通过埋入绝缘膜来限制蚀刻区域，从而能够精确地形成位移部。

公开(公告)号：US06199430B1

公开(公告)日：2001-03-13

申请号：US09241137

申请日：1999-02-02

申请人： Kazuhiko Kano ,  Koji Hattori ,  Yoshinori Ohtsuka ,  Makiko Sugiura ,  Minekazu Sakai ,  Inao Toyoda ,  Yasutoshi Suzuki ,  Seiichiro Ishio ,  Minoru Murata

发明人： Kazuhiko Kano ,  Koji Hattori ,  Yoshinori Ohtsuka ,  Makiko Sugiura ,  Minekazu Sakai ,  Inao Toyoda ,  Yasutoshi Suzuki ,  Seiichiro Ishio ,  Minoru Murata

IPC分类号： G01P15125

CPC分类号： B81B7/0006 ,  B81B2201/0235 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/135 ,  G01P15/18 ,  G01P2015/0817 ,  G01P2015/0828 ,  G01V1/181 ,  H01H1/0036

摘要： An acceleration sensor has a ring-shaped movable electrode connected to an anchor part via beams and a fixed electrode facing the ring-shaped movable electrode defining a specific interval, which are disposed on a substrate. The movable electrode is displaced by acceleration approximately in parallel to the substrate and contacts the fixed electrode, so that the acceleration is detected. The fixed electrode is divided into a detecting fixed electrode for contacting the movable electrode and a sensitivity controlling fixed electrode insulated from the detecting fixed electrode. Accordingly, potential differences between the movable electrode and the detecting fixed electrode and between the movable electrode and the sensitivity controlling fixed electrode are independently controlled to control sensitivity of acceleration.

摘要翻译： 加速度传感器具有环形可动电极，其经由梁和固定电极连接到锚定部分，固定电极面向限定特定间隔的环形可动电极，该固定电极设置在基板上。 可移动电极通过与基板大致平行的加速移位，并与固定电极接触，从而检测加速度。 固定电极被分成用于接触可动电极的检测固定电极和与检测固定电极绝缘的灵敏度控制固定电极。 因此，独立地控制可动电极和检测用固定电极之间以及可动电极与灵敏度控制固定电极之间的电位差，以控制加速度的灵敏度。

公开(公告)号：US5932921A

公开(公告)日：1999-08-03

申请号：US958319

申请日：1997-10-27

申请人： Minekazu Sakai ,  Inao Toyoda ,  Nobukazu Oba

发明人： Minekazu Sakai ,  Inao Toyoda ,  Nobukazu Oba

IPC分类号： G01L9/00 ,  H01L21/3063 ,  H01L29/84 ,  H01L29/82

CPC分类号： G01L9/0042 ,  H01L29/84

摘要： When a diaphragm portion of the pressure sensor or the like is fabricated, anisotropic etching is needed. This etching is carried out by electrochemically stopped etching. During this process, a voltage is applied to the diaphragm portion. A diode is connected between said diaphragm portion and an integrated circuit to prevent the voltage from being applied to the integrated circuit connected with the diaphragm portion. The diode is obtained by shorting the base and collector of a lateral p-n-p transistor to each other. A collector region is formed offset from immediately under a conductor pattern to prevent a parasitic MOS effect from producing a channel serving as a leakage current path. Further, a heavily doped n-type diffused region acting as a channel stopper is formed along the outer periphery of the collector region.

摘要翻译： 当制造压力传感器等的隔膜部分时，需要进行各向异性蚀刻。 该蚀刻通过电化学停止蚀刻进行。 在该过程中，向隔膜部分施加电压。 二极管连接在所述隔膜部分和集成电路之间，以防止电压施加到与隔膜部分连接的集成电路。 二极管通过将侧面p-n-p晶体管的基极和集电极彼此短接而获得。 集电极区域形成为从导体图案的正下方偏移，以防止寄生MOS效应产生用作漏电流路径的通道。 此外，沿集电区域的外周形成充当通道阻挡件的重掺杂n型扩散区域。

公开(公告)号：US06388279B1

公开(公告)日：2002-05-14

申请号：US09095131

申请日：1998-06-10

申请人： Minekazu Sakai ,  Toshimasa Yamamoto ,  Yasutoshi Suzuki ,  Kenichi Yokoyama ,  Masakazu Terada ,  Eishi Kawasaki ,  Inao Toyoda

发明人： Minekazu Sakai ,  Toshimasa Yamamoto ,  Yasutoshi Suzuki ,  Kenichi Yokoyama ,  Masakazu Terada ,  Eishi Kawasaki ,  Inao Toyoda

IPC分类号： H01L2720

CPC分类号： G01L9/0054 ,  B81C1/00357 ,  B81C2201/019 ,  G01L9/0042

摘要： In the method for manufacturing a semiconductor substrate, a concavity and a connecting hole for connecting the concavity to the outside are formed on a lower face side of a first substrate, and the first substrate is laminated with a second substrate in an atmosphere at atmospheric pressure. A diaphragm is formed by thinning the first substrate from its upper face by polishing. A sealing hole reaching to the connecting hole is formed from the upper face of the first substrate. An oxide film is formed in the sealing hole in a vacuum, whereby the connecting hole is sealed while the pressure of the pressure reference chamber is reduced to a vacuum. In this way, since the pressure reference chamber is pressure-reduced in a final stage, the diaphragm can be prevented from deforming due to pressure difference during polishing.

摘要翻译： 在半导体衬底的制造方法中，在第一衬底的下表面上形成用于将凹部连接到外部的凹部和连接孔，并且将第一衬底与大气压的气氛中的第二衬底层叠 。 通过抛光使第一基板从其上表面变薄而形成隔膜。 从第一基板的上表面形成到达连接孔的密封孔。 在真空中在密封孔中形成氧化膜，由此在压力基准室的压力降低到真空的同时密封连接孔。 以这种方式，由于压力基准室在最终阶段被减压，所以可以防止由于研磨过程中的压力差导致的隔膜变形。

公开(公告)号：US06450031B1

公开(公告)日：2002-09-17

申请号：US09625860

申请日：2000-07-26

申请人： Minekazu Sakai ,  Minoru Murata ,  Seiki Aoyama ,  Youko Nakagawa

发明人： Minekazu Sakai ,  Minoru Murata ,  Seiki Aoyama ,  Youko Nakagawa

IPC分类号： G01P1500

CPC分类号： G01P15/125 ,  B81B3/0086 ,  B81B2201/0235 ,  B81B2203/0109 ,  B81B2203/051 ,  G01P15/0802 ,  G01P2015/0814

摘要： A semiconductor physical quantity sensor from which a stable sensor output can be obtained even when the usage environment changes. A silicon thin film is disposed on an insulating film on a supporting substrate, and a bridge structure having a weight part and moving electrodes and cantilever structures having fixed electrodes are formed as separate sections from this silicon thin film. The moving electrodes provided on the weight part and the cantilevered fixed electrodes are disposed facing each other. Slits are formed at root portions of the cantilevered fixed electrodes at the fixed ends thereof, and the width W1 of the root portions is thereby made narrower than the width W2 of the fixed electrodes proper. As a result, the transmission of warp of the supporting substrate to the cantilevered fixed electrodes is suppressed.

摘要翻译： 一种半导体物理量传感器，即使在使用环境变化的情况下也能够获得稳定的传感器输出。 将硅薄膜设置在支撑基板上的绝缘膜上，并且具有重量部分的电桥结构和具有固定电极的移动电极和悬臂结构形成为与该硅薄膜分开的部分。 设置在重量部分和悬臂固定电极上的移动电极彼此面对地设置。 在悬臂固定电极的固定端的根部处形成狭缝，从而使根部的宽度W1比固定电极本体的宽度W2窄。 结果，抑制了支撑基板的翘曲向悬臂固定电极的传递。

公开(公告)号：US6151966A

公开(公告)日：2000-11-28

申请号：US304849

申请日：1999-05-05

申请人： Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Seiji Fujino ,  Tsuyoshi Fukada ,  Hiroshige Sugito ,  Minoru Murata ,  Hiroshi Muto ,  Hirofumi Higuchi ,  Kenichi Ao

发明人： Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Seiji Fujino ,  Tsuyoshi Fukada ,  Hiroshige Sugito ,  Minoru Murata ,  Hiroshi Muto ,  Hirofumi Higuchi ,  Kenichi Ao

IPC分类号： G01P15/08 ,  G01P15/125 ,  H01L29/84 ,  G01L1/00

CPC分类号： G01P15/125 ,  G01P15/0802 ,  G01P2015/0814

摘要： A semiconductor accelerometer device is formed on an SOI substrate by micro-machining. A movable unit is supported at both ends, and a weight portion is movable in response to acceleration exerted in the detection direction. A movable electrode is formed in a comb shape integrally with the weight portion. A pair of fixed electrodes in a comb shape are cantilevered and interleaved with the movable electrode to face the movable electrode. A plurality of through holes is provided in the electrodes so that the electrodes have Rahmen structure which is a series of rectangular frames. This structure reduces the weight of each electrode while increasing the strength against twist force. The electrodes are less likely from breaking in response to an acceleration exerted in a direction perpendicular to the normal detection direction because of reduced weight.

摘要翻译： 通过微加工在SOI衬底上形成半导体加速度计装置。 可移动单元被支撑在两端，并且重量部分可响应于沿检测方向施加的加速度而移动。 可动电极与配重部一体地形成为梳形。 一对梳状的固定电极是悬臂式的，与可动电极交错而面对可动电极。 多个通孔设置在电极中，使得电极具有Rahmen结构，其是一系列矩形框架。 这种结构减小了每个电极的重量，同时增加了抗扭力的强度。 由于重量减轻，电极响应于垂直于正常检测方向的方向的加速度而不太可能破裂。

公开(公告)号：US06792805B2

公开(公告)日：2004-09-21

申请号：US10369198

申请日：2003-02-20

申请人： Minoru Murata ,  Minekazu Sakai

发明人： Minoru Murata ,  Minekazu Sakai

IPC分类号： G01P15125

CPC分类号： G01P15/125 ,  G01P2015/0814

摘要： A capacitive acceleration sensor includes a supporting substrate, a movable member, and two fixed members. The movable member moves in response to a force that acts on the movable member. Each fixed member is stationary under the force. Two capacitances are formed between the movable member and the fixed members. One of the capacitances increases while the other decreases when the movable member moves in response to the force. The force includes a substantially constant force and a variable force when an acceleration is measured using the sensor. The variable force is proportional to the acceleration. The acceleration is measured on the basis of the difference between the capacitances. The capacitances are different from each other when the force that acts on the movable member is zero to reduce the difference between the capacitances that corresponds to the substantially constant force.

摘要翻译： 电容式加速度传感器包括支撑基板，可移动部件和两个固定部件。 可移动构件响应于作用在可动构件上的力移动。 每个固定构件在力作用下是静止的。 在可动构件和固定构件之间形成两个电容。 当可动构件响应于力而移动时，电容之一增加而另一个减小。 当使用传感器测量加速度时，该力包括基本恒定的力和可变的力。 可变力与加速度成比例。 基于电容之差测量加速度。 当作用在可动构件上的力为零时，电容彼此不同，以减小对应于基本恒定的力的电容之间的差异。

公开(公告)号：US06494096B2

公开(公告)日：2002-12-17

申请号：US09801917

申请日：2001-03-09

申请人： Minekazu Sakai ,  Minoru Murata

发明人： Minekazu Sakai ,  Minoru Murata

IPC分类号： G01P15125

CPC分类号： B81B3/0008 ,  B81B2201/0235 ,  G01P15/125 ,  G01P2015/0814

摘要： A semiconductor acceleration sensor, which prevents an adhesion of a movable electrode to a first or second fixed electrode due to an electrostatic attracting force generated therebetween. The sensor has a weight portion and movable electrodes formed on both sides of which, and first and second fixed electrodes each engaging with the each of the movable electrodes. Each of the first and second fixed electrodes is disposed in parallel with each of the movable electrodes so that side faces thereof determine a detection interval and non-detection interval larger than the detection interval with side faces of adjoining two of the movable electrodes. Protrusions are formed on both of the side faces of each of the first and second fixed electrodes. These protrusions prevent the movable electrodes from adhering to the first or second fixed electrode in both of the detection interval and non-detection interval.

摘要翻译： 一种半导体加速度传感器，其防止由于其间产生的静电吸引力而将可动电极粘附到第一或第二固定电极。 该传感器具有一个配重部分和形成在其两侧的可动电极，并且每个可移动电极各自配置有第一和第二固定电极。 第一固定电极和第二固定电极中的每一个与每个可动电极平行地设置，使得其侧面确定相邻两个可动电极的侧面的检测间隔和大于检测间隔的非检测间隔。 突起形成在第一和第二固定电极中的每一个的两个侧面上。 这些突起在检测间隔和非检测间隔中都防止可动电极粘附到第一或第二固定电极。

公开(公告)号：US06430999B1

公开(公告)日：2002-08-13

申请号：US09818624

申请日：2001-03-28

申请人： Minoru Murata ,  Minekazu Sakai

发明人： Minoru Murata ,  Minekazu Sakai

IPC分类号： G01P1500

摘要： A semiconductor physical quantity sensor has a beam connecting a movable portion and a support substrate for displacing the movable portion in a displacement direction. The beam has a rectangular frame shape with a hollow portion and is surrounded by a groove. The groove has opposing intervals at both sides of the beam in the displacement direction, and the opposing intervals are equal to an interval of the hollow portion in the displacement direction. Accordingly, etching rates at the groove and the hollow portion become approximately equal to each other, reducing processing variation of the beam.