公开(公告)号：US06276207B1

公开(公告)日：2001-08-21

申请号：US09438293

申请日：1999-11-12

申请人： Minekazu Sakai ,  Yukihiro Takeuchi ,  Inao Toyoda ,  Seiichiro Ishio ,  Toshimasa Yamamoto ,  Eishi Kawasaki ,  Minoru Murata ,  Hiroshi Muto

发明人： Minekazu Sakai ,  Yukihiro Takeuchi ,  Inao Toyoda ,  Seiichiro Ishio ,  Toshimasa Yamamoto ,  Eishi Kawasaki ,  Minoru Murata ,  Hiroshi Muto

IPC分类号： G01P1500

CPC分类号： B81C1/00928 ,  B81B3/0008 ,  B81B3/001 ,  B81B2201/0235 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

摘要： A semiconductor acceleration sensor, which prevents an adhesion of a movable portion to a fixed portion due to an electrostatic force generated during being handled. The acceleration sensor has a sensor portion and a handling portion. The sensor portion has a first semiconductor layer; a movable portion including a weight portion supported to the first semiconductor layer for moving in accordance with an acceleration externally applied thereto and movable electrodes integrally formed with the weight portion; and fixed electrodes having a detection surface confronted to a detection surface of the movable electrodes and supported to the first semiconductor layer. The handling portion is to be contacted during being handled, and is provided at surrounding portion of the sensor portion with a trench interposed therebetween. The sensor portion is electrically insulated from the handling portion by the trench.

摘要翻译： 一种半导体加速度传感器，其防止由于在处理期间产生的静电力而将可动部分粘附到固定部分。 加速度传感器具有传感器部分和处理部分。 传感器部分具有第一半导体层; 可移动部分，包括支撑到第一半导体层的重量部分，用于根据向外施加的加速度以及与重物部分整体形成的可动电极; 以及固定电极，其具有与可动电极的检测面相对的支撑于第一半导体层的检测面。 处理部分在处理时被接触，并且在传感器部分的周围部分处设置有介于其间的沟槽。 传感器部分通过沟槽与处理部分电绝缘。

公开(公告)号：US6151966A

公开(公告)日：2000-11-28

申请号：US304849

申请日：1999-05-05

申请人： Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Seiji Fujino ,  Tsuyoshi Fukada ,  Hiroshige Sugito ,  Minoru Murata ,  Hiroshi Muto ,  Hirofumi Higuchi ,  Kenichi Ao

发明人： Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Seiji Fujino ,  Tsuyoshi Fukada ,  Hiroshige Sugito ,  Minoru Murata ,  Hiroshi Muto ,  Hirofumi Higuchi ,  Kenichi Ao

IPC分类号： G01P15/08 ,  G01P15/125 ,  H01L29/84 ,  G01L1/00

CPC分类号： G01P15/125 ,  G01P15/0802 ,  G01P2015/0814

摘要： A semiconductor accelerometer device is formed on an SOI substrate by micro-machining. A movable unit is supported at both ends, and a weight portion is movable in response to acceleration exerted in the detection direction. A movable electrode is formed in a comb shape integrally with the weight portion. A pair of fixed electrodes in a comb shape are cantilevered and interleaved with the movable electrode to face the movable electrode. A plurality of through holes is provided in the electrodes so that the electrodes have Rahmen structure which is a series of rectangular frames. This structure reduces the weight of each electrode while increasing the strength against twist force. The electrodes are less likely from breaking in response to an acceleration exerted in a direction perpendicular to the normal detection direction because of reduced weight.

摘要翻译： 通过微加工在SOI衬底上形成半导体加速度计装置。 可移动单元被支撑在两端，并且重量部分可响应于沿检测方向施加的加速度而移动。 可动电极与配重部一体地形成为梳形。 一对梳状的固定电极是悬臂式的，与可动电极交错而面对可动电极。 多个通孔设置在电极中，使得电极具有Rahmen结构，其是一系列矩形框架。 这种结构减小了每个电极的重量，同时增加了抗扭力的强度。 由于重量减轻，电极响应于垂直于正常检测方向的方向的加速度而不太可能破裂。

公开(公告)号：US06287885B1

公开(公告)日：2001-09-11

申请号：US09306381

申请日：1999-05-06

申请人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Masakazu Terada ,  Hiroshige Sugito ,  Masakazu Kanosue ,  Shinji Yoshihara ,  Shoji Ozoe ,  Seiji Fujino ,  Minekazu Sakai ,  Minoru Murata ,  Yukihiro Takeuchi ,  Seiki Aoyama ,  Toshio Yamamoto ,  Kazushi Asami

发明人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Masakazu Terada ,  Hiroshige Sugito ,  Masakazu Kanosue ,  Shinji Yoshihara ,  Shoji Ozoe ,  Seiji Fujino ,  Minekazu Sakai ,  Minoru Murata ,  Yukihiro Takeuchi ,  Seiki Aoyama ,  Toshio Yamamoto ,  Kazushi Asami

IPC分类号： H01L21302

CPC分类号： B81C1/00936 ,  B81B3/0005 ,  B81B2201/0235 ,  B81B2201/025 ,  B81B2203/0136 ,  B81B2203/033 ,  B81B2203/04 ,  B81C2201/0132 ,  B81C2201/053 ,  B81C2201/112 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/084

摘要： In a method for manufacturing a semiconductor acceleration sensor, a movable portion including a mass portion and movable electrodes is formed in a single crystal silicon thin film provided on a silicon wafer through an insulation film by etching both the single crystal silicon thin film and the silicon wafer. In this case, the movable portion is finally defined at a movable portion defining step that is carried out in a vapor phase atmosphere. Accordingly, the movable portion is prevented from sticking to other regions due to etchant during the manufacture thereof.

公开(公告)号：US06906394B2

公开(公告)日：2005-06-14

申请号：US10448277

申请日：2003-05-30

申请人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

发明人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

IPC分类号： G01P15/125 ,  B81B3/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/762 ,  H01L29/84 ,  H01L27/01

CPC分类号： B81C1/00936 ,  B81B2203/0136 ,  B81C1/0019 ,  B81C1/00531 ,  B81C2201/0132 ,  G01P2015/0814 ,  H01L21/76232 ,  H01L21/76264 ,  H01L21/76283

摘要： A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.

摘要翻译： 提供一种制造半导体器件的方法。 使用具有按顺序层叠的第一硅层，氧化物层和第二硅层的SOI（绝缘体上硅）基板来制造器件。 在形成从第二硅层到达氧化物层的沟槽之后，进行干蚀刻，从而允许首先将位于沟槽底部的氧化物层充电。 该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。 去除这样的部件，形成可动部分。 例如，中和电荷的离子被施加到沟槽中，使得电荷从带电的可移动电极及其带电的周围区域中去除。 拆卸电荷可防止可动部分粘附到其周围部分。

公开(公告)号：US06753201B2

公开(公告)日：2004-06-22

申请号：US10154784

申请日：2002-05-28

申请人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

发明人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

IPC分类号： H01L2100

CPC分类号： B81C1/00936 ,  B81B2203/0136 ,  B81C1/0019 ,  B81C1/00531 ,  B81C2201/0132 ,  G01P2015/0814 ,  H01L21/76232 ,  H01L21/76264 ,  H01L21/76283

摘要： A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.

摘要翻译： 提供一种制造半导体器件的方法。 使用具有按顺序层叠的第一硅层，氧化物层和第二硅层的SOI（绝缘体上硅）基板来制造器件。 在形成从第二硅层到达氧化物层的沟槽之后，进行干蚀刻，从而允许首先将位于沟槽底部的氧化物层充电。 该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。 去除这样的部件，形成可动部分。 例如，中和电荷的离子被施加到沟槽中，使得电荷从带电的可移动电极及其带电的周围区域中去除。 拆卸电荷可防止可动部分粘附到其周围部分。

公开(公告)号：US06444543B2

公开(公告)日：2002-09-03

申请号：US09866709

申请日：2001-05-30

申请人： Minekazu Sakai ,  Hiroshige Sugito ,  Hiroshi Muto ,  Motoki Ito ,  Tsuyoshi Fukada

发明人： Minekazu Sakai ,  Hiroshige Sugito ,  Hiroshi Muto ,  Motoki Ito ,  Tsuyoshi Fukada

IPC分类号： H01L21301

CPC分类号： B81C1/00896 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

摘要： Plural semiconductor chips such as acceleration sensor chips formed on the first surface of a substrate are separated into individual pieces by dicing the substrate from the second surface thereof. A groove surrounding each sensor chip, along which the sensor chip is diced out, is formed at the same time the sensor chip is formed on the first surface. Before dicing, a protecting sheet covering the first surface is pasted along the sidewalls and the bottom wall of the groove. The groove is made sufficiently wide to ensure that the protecting sheet is bent along the walls of the groove without leaving a space between the groove and the protecting sheet. Thus, dicing dusts generated in the dicing process are prevented from being scattered and entering the sensor chip.

摘要翻译： 通过从基板的第二表面切割基板，形成在基板的第一表面上的加速度传感器芯片的多个半导体芯片被分离成单独的部件。 在传感器芯片形成在第一表面上的同时形成围绕传感器芯片的每个传感器芯片周围的凹槽，该传感器芯片被切出。 在切割之前，覆盖第一表面的保护片沿着凹槽的侧壁和底壁粘贴。 所述凹槽被制成足够宽以确保保护片沿着凹槽的壁弯曲，而不会在凹槽和保护片之间留下空间。 因此，防止在切割工艺中产生的切割粉尘被散射并进入传感器芯片。

公开(公告)号：US20050054153A1

公开(公告)日：2005-03-10

申请号：US10936539

申请日：2004-09-09

申请人： Kazushi Asami ,  Junji Oohara ,  Hiroshi Muto ,  Kazuhiko Sugiura ,  Tsuyoshi Fukada ,  Yukihiro Takeuchi

发明人： Kazushi Asami ,  Junji Oohara ,  Hiroshi Muto ,  Kazuhiko Sugiura ,  Tsuyoshi Fukada ,  Yukihiro Takeuchi

IPC分类号： B81C1/00 ,  H01L21/306 ,  H01L29/80 ,  H05K3/06

CPC分类号： B81C1/00619 ,  B81C2201/0112

摘要： A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.

摘要翻译： 一种制造具有可移动部分的半导体器件的方法包括以下步骤：在半导体层上形成沟槽，使得沟槽到达绝缘层; 以及通过蚀刻沟槽的侧壁形成可动部分，使得半导体层与绝缘层分离。 通过反应离子蚀刻方法进行形成沟槽并形成可动部的步骤。 在形成沟槽的步骤中，防止设置在沟槽底部的绝缘层被正面地充电。 设置在沟槽底部的绝缘层在形成可移动部分的步骤中被正向地充电。

公开(公告)号：US07214625B2

公开(公告)日：2007-05-08

申请号：US10936539

申请日：2004-09-09

申请人： Kazushi Asami ,  Junji Oohara ,  Hiroshi Muto ,  Kazuhiko Sugiura ,  Tsuyoshi Fukada ,  Yukihiro Takeuchi

发明人： Kazushi Asami ,  Junji Oohara ,  Hiroshi Muto ,  Kazuhiko Sugiura ,  Tsuyoshi Fukada ,  Yukihiro Takeuchi

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L29/82

CPC分类号： B81C1/00619 ,  B81C2201/0112

摘要： A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.

摘要翻译： 一种制造具有可移动部分的半导体器件的方法包括以下步骤：在半导体层上形成沟槽，使得沟槽到达绝缘层; 以及通过蚀刻沟槽的侧壁形成可动部分，使得半导体层与绝缘层分离。 通过反应离子蚀刻方法进行形成沟槽并形成可动部的步骤。 在形成沟槽的步骤中，防止设置在沟槽底部的绝缘层被正面地充电。 设置在沟槽底部的绝缘层在形成可移动部分的步骤中被正向地充电。

公开(公告)号：US08176802B2

公开(公告)日：2012-05-15

申请号：US12275350

申请日：2008-11-21

申请人： Hiroshi Muto ,  Shouji Hattori ,  Shinichirou Kouno

发明人： Hiroshi Muto ,  Shouji Hattori ,  Shinichirou Kouno

IPC分类号： G01M99/00 ,  B02C4/12 ,  B02C19/20 ,  B01J2/00

CPC分类号： B02C19/20 ,  G01M99/00

摘要： There is provided a fibrous particle generating apparatus and a test system. The fibrous particle generating apparatus includes a base material containing a fibrous material; a holding unit holding the base material; a fibrous particle generator generating fibrous particles by chafing the base material; and a movement unit moving the holding unit such that the base material held by holding unit is chafed against the fibrous particle generator. With this configuration, fibrous particles can be stably generated, and an evaluation of the object apparatus can be carried out on the basis of the generated fibrous particles.

摘要翻译： 提供了纤维颗粒发生装置和测试系统。 纤维颗粒发生装置包括含有纤维材料的基材; 保持所述基材的保持单元; 纤维颗粒发生器，通过擦洗基材产生纤维颗粒; 以及移动单元，使所述保持单元移动，使得由保持单元保持的基材被擦伤所述纤维颗粒发生器。 利用这种构造，可以稳定地产生纤维颗粒，并且可以基于所生成的纤维颗粒进行对象装置的评价。

公开(公告)号：US20120033382A1

公开(公告)日：2012-02-09

申请号：US13167230

申请日：2011-06-23

申请人： Yosuke Tsunoda ,  Masumi Suzuki ,  Michimasa Aoki ,  Masaru Sugie ,  Shinichirou Kouno ,  Hiroshi Muto ,  Kenji Katsumata

发明人： Yosuke Tsunoda ,  Masumi Suzuki ,  Michimasa Aoki ,  Masaru Sugie ,  Shinichirou Kouno ,  Hiroshi Muto ,  Kenji Katsumata

IPC分类号： H05K7/20 ,  F28D15/00 ,  F28F7/00

CPC分类号： F28D15/043 ,  F28D15/0233 ,  H01L23/473 ,  H01L2924/0002 ,  H01L2924/00

摘要： A heat sink for absorbing heat which is generated by an electronic module by using a coolant which flows in its internal portion, comprises a housing which is provided with, in its internal portion, a first surface which is located in the vicinity of the electronic module and a second surface which faces the first surface and comprises fins which extend from the first surface toward the second surface, wherein a projecting portion projecting from the second surface toward the first surface is formed at the second surface, between the top edges of the fins on the second surface side and the second surface.

摘要翻译： 一种用于吸收由电子模块产生的热量的散热片，其通过使用在其内部部分流动的冷却剂而包括壳体，该壳体在其内部设有位于电子模块附近的第一表面 以及面对所述第一表面的第二表面，并且包括从所述第一表面朝向所述第二表面延伸的翅片，其中在所述第二表面处形成从所述第二表面朝向所述第一表面突出的突出部分， 在第二表面侧和第二表面上。