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21.发明申请公开(公告)号：US20050170650A1
公开(公告)日：2005-08-04
申请号：US10970354
申请日：2004-10-21
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/02074 , C23C18/1893 , C23C18/50 , H01L21/288 , H01L21/76849 , H01L21/76874 , H01L21/76883
摘要： In one embodiment, a method for activating a metal layer prior to depositing a cobalt-containing capping layer is provided which includes exposing the metal layer to an electroless activation solution to deposit a palladium layer on the metal layer and depositing the cobalt-containing capping layer on the palladium layer. The electroless activation solution contains palladium nitrate at a concentration in a range from about 0.01 mM to about 1.0 mM, nitric acid at a concentration in a range from about 0.01 mM to about 3.0 mM and water. In another embodiment, the electroless activation solution contains palladium nitrate at a concentration in a range from about 0.01 mM to about 1.0 mM, methanesulfonic acid at a concentration in a range from about 0.01 mM to about 3.0 mM and water.
摘要翻译： 在一个实施方案中，提供了在沉积含钴覆盖层之前激活金属层的方法，其包括将金属层暴露于无电解活化溶液以在钯金属层上沉积钯层并沉积含钴覆盖层 在钯层上。 无电解激活溶液含有浓度范围为约0.01mM至约1.0mM的硝酸钯，浓度为约0.01mM至约3.0mM的硝酸和水。 在另一个实施方案中，无电解活化溶液含有浓度范围为约0.01mM至约1.0mM的硝酸钯，浓度为约0.01mM至约3.0mM的甲磺酸和水。
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22.发明申请Heterogeneous activation layers formed by ionic and electroless reactions used for IC interconnect capping layers 审中-公开通过用于IC互连覆盖层的离子和无电反应形成的非均相活化层公开(公告)号：US20050085031A1
公开(公告)日：2005-04-21
申请号：US10967099
申请日：2004-10-15
申请人： Sergey Lopatin , Arulkumar Shanmugasundram , Yosef Shacham-Diamand , Timothy Weidman , Dmitry Lubomirsky
发明人： Sergey Lopatin , Arulkumar Shanmugasundram , Yosef Shacham-Diamand , Timothy Weidman , Dmitry Lubomirsky
IPC分类号： C23C18/18 , C23C18/50 , H01L21/285 , H01L21/288 , H01L21/768 , H01L21/8238
CPC分类号： H01L21/76849 , C23C18/1844 , C23C18/50 , H01L21/28562 , H01L21/288 , H01L21/76867 , H01L21/76868 , H01L21/76874
摘要： Embodiments of the invention generally provide compositions of activation-alloy solutions, methods to deposit activation-alloys and electronic devices including activation-alloys and capping layers. In one embodiment, a method for depositing a capping layer for a semiconductor device is provided which includes exposing a conductive layer on a substrate surface to an activation-alloy solution, forming an activation-alloy layer on the conductive layer using the activation-alloy solution, and depositing the capping layer on the activation-alloy layer using an electroless deposition solution.
摘要翻译： 本发明的实施方案通常提供活化合金溶液的组合物，沉积活化合金的方法和包括活化合金和覆盖层的电子器件。 在一个实施例中，提供了一种用于沉积半导体器件的覆盖层的方法，其包括将基板表面上的导电层暴露于活化合金溶液，使用活化合金溶液在导电层上形成活化合金层 ，并使用无电镀沉积溶液将所述封盖层沉积在所述活化合金层上。
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公开(公告)号：US08308858B2
公开(公告)日：2012-11-13
申请号：US12689176
申请日：2010-01-18
CPC分类号： C23C18/1893 , B82Y30/00 , C23C18/1651 , C23C18/32 , C23C18/34 , H01L21/02063 , H01L21/28518 , H01L21/288 , H01L21/76802 , H01L21/76814 , H01L21/76843 , H01L21/76847 , H01L21/76855 , H01L21/76856 , H01L21/76867 , H01L21/76874 , H01L21/76879 , H01L21/76889
摘要： Embodiments as described herein provide methods for depositing a material on a substrate during electroless deposition processes, as well as compositions of the electroless deposition solutions. In one embodiment, the substrate contains a contact aperture having an exposed silicon contact surface. In another embodiment, the substrate contains a contact aperture having an exposed silicide contact surface. The apertures are filled with a metal contact material by exposing the substrate to an electroless deposition process. The metal contact material may contain a cobalt material, a nickel material, or alloys thereof. Prior to filling the apertures, the substrate may be exposed to a variety of pretreatment processes, such as preclean processes and activations processes. A preclean process may remove organic residues, native oxides, and other contaminants during a wet clean process or a plasma etch process. Embodiments of the process also provide the deposition of additional layers, such as a capping layer.
摘要翻译： 本文所述的实施方案提供了在无电沉积工艺期间在基材上沉积材料的方法以及无电沉积溶液的组合物。 在一个实施例中，衬底包含具有暴露的硅接触表面的接触孔。 在另一个实施例中，衬底包含具有暴露的硅化物接触表面的接触孔。 通过将基板暴露于无电镀沉积工艺，用金属接触材料填充孔。 金属接触材料可以包含钴材料，镍材料或其合金。 在填充孔之前，衬底可以暴露于各种预处理工艺，例如预清洗工艺和激活工艺。 预清洗方法可以在湿式清洁工艺或等离子体蚀刻工艺期间去除有机残余物，天然氧化物和其它污染物。 该方法的实施方案还提供附加层的沉积，例如覆盖层。
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24.发明授权公开(公告)号：US07827930B2
公开(公告)日：2010-11-09
申请号：US11043442
申请日：2005-01-26
申请人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Russell Ellwanger , Ian A. Pancham , Ramakrishna Cheboli , Timothy W. Weidman
发明人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Russell Ellwanger , Ian A. Pancham , Ramakrishna Cheboli , Timothy W. Weidman
IPC分类号： B05C3/02
CPC分类号： H01L21/67155 , C23C18/1628 , H01L21/67167 , H01L21/6719 , H01L21/6723
摘要： An electroless deposition system is provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate transfer shuttle positioned to transfer substrates between the first and second processing stations. The system also includes a substrate transfer robot positioned on the mainframe and configured to access an interior of the processing enclosure. The system also includes a substrate a fluid delivery system that is configured to deliver a processing fluid by use of a spraying process to a substrate mounted in the processing enclosure.
摘要翻译： 提供无电沉积系统。 该系统包括处理主机，位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。 无电沉积站包括环境受控的处理外壳，被配置为清洁和激活基板的表面的第一处理站，被配置为将层无电沉积到基板的表面上的第二处理站，以及位于 在第一和第二处理站之间传送衬底。 该系统还包括位于主机上并被配置为访问处理外壳内部的基板传送机器人。 该系统还包括一个流体输送系统，该流体输送系统被配置成通过使用喷射过程将处理流体输送到安装在处理外壳中的基板。
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25.发明申请Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing 有权动态测量方案和采样方案，用于半导体处理中的先进过程控制公开(公告)号：US20080109089A1
公开(公告)日：2008-05-08
申请号：US12006318
申请日：2007-12-31
IPC分类号： G05B13/02
CPC分类号： B24B37/013 , B24B37/042 , B24B49/03 , B24B49/18 , B24B53/017 , G05B19/00 , G05B19/19 , G05B19/41865 , G05B2219/32053 , G05B2219/32065 , G05B2219/45031 , H01L21/31053 , H01L21/67253 , H01L21/67276 , H01L22/20 , Y02P90/14 , Y02P90/20 , Y02P90/22 , Y02P90/86
摘要： Systems, methods and mediums are provided for dynamic adjustment of sampling plans in connection with a wafer (or other device) to be measured. The invention adjusts the frequency and/or spatial resolution of measurements on an as-needed basis when one or more events occur that are likely to indicate an internal or external change affecting the manufacturing process or results. The dynamic metrology plan adjusts the spatial resolution of sampling within-wafer by adding, subtracting or replacing candidate points from the sampling plan, in response to certain events which suggest that additional or different measurements of the wafer may be desirable. Further, the invention may be used in connection with adjusting the frequency of wafer-to-wafer measurements.
摘要翻译： 提供了系统，方法和介质，用于与要测量的晶片（或其他器件）相关的采样计划的动态调整。 当发生可能指示影响制造过程或结果的内部或外部变化的一个或多个事件时，本发明在需要的基础上调整测量的频率和/或空间分辨率。 动态计量计划通过根据某些事件增加，减去或替换采样计划中的候选点来调整晶片内采样的空间分辨率，这些事件表明可能需要对晶片进行额外或不同的测量。 此外，本发明可以与调整晶片到晶片测量的频率有关。
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公开(公告)号：US07341633B2
公开(公告)日：2008-03-11
申请号：US10965220
申请日：2004-10-14
CPC分类号： H01L21/76838 , C23C18/1601 , C23C18/1619 , C23C18/1628 , C23C18/1678 , C23C18/1682 , C23C18/1872 , C23C18/28 , H01L21/288 , Y10S134/902
摘要： Embodiments of the invention generally provide a fluid processing platform. The platform includes a mainframe having a substrate transfer robot, at least one substrate cleaning cell on the mainframe, and at least one processing enclosure. The processing enclosure includes a gas supply positioned in fluid communication with an interior of the processing enclosure, a first fluid processing cell positioned in the enclosure, a first substrate head assembly positioned to support a substrate for processing in the first fluid processing cell, a second fluid processing cell positioned in the enclosure, a second head assembly positioned to support a substrate for processing in the second fluid processing cell, and a substrate shuttle positioned between the first and second fluid processing cells and being configured to transfer substrates between the fluid processing cells and the mainframe robot.
摘要翻译： 本发明的实施例通常提供流体处理平台。 平台包括具有基板传送机器人的主机，主机上的至少一个基板清洁单元，以及至少一个处理机壳。 处理外壳包括定位成与处理外壳的内部流体连通的气体供应源，位于外壳中的第一流体处理单元，定位成支撑基板以在第一流体处理单元中进行处理的第一基板头组件，第二流体处理单元 位于外壳中的流体处理单元，定位成支撑用于在第二流体处理单元中进行处理的基板的第二头部组件，以及位于第一和第二流体处理单元之间的衬底梭，并且构造成将衬底在流体处理单元 和主机机器人。
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公开(公告)号：US07247080B1
公开(公告)日：2007-07-24
申请号：US11397075
申请日：2006-04-03
CPC分类号： G05B19/41875 , G05B2219/45232 , Y02P90/22
摘要： Methods and apparatus for feedback controlled polishing. A computer program product for generating feedback for chemical mechanical polishing. The product includes instructions operable to cause a processor to receive monitoring information during a current polishing cycle in which a first polishing process is performed on a substrate that includes a metal layer. The first polishing process clears the metal layer from the substrate during the current polishing cycle. The product includes instructions to calculate a representation of a clearing profile of the first polishing process. The calculation is based on the monitoring information received during the current polishing cycle. The product includes instructions to detect non-uniformity in the representation. The product includes instructions to generate, from the non-uniformity detected, feedback information for improving the uniformity of a clearing profile of the first polishing process for a subsequent polishing cycle.
摘要翻译： 用于反馈控制抛光的方法和装置。 一种用于产生化学机械抛光反馈的计算机程序产品。 该产品包括可操作以使处理器在当前抛光循环期间接收监测信息的指令，其中在包括金属层的基板上执行第一抛光工艺。 在当前的抛光循环期间，第一抛光工艺从衬底中清除金属层。 该产品包括计算第一次抛光过程的清除轮廓的表示的说明。 该计算基于在当前抛光周期期间接收到的监视信息。 该产品包括检测表示中不均匀的指令。 该产品包括从不均匀性检测到的反馈信息中产生用于改进随后抛光循环的第一抛光处理的清除轮廓的均匀性的指令。
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公开(公告)号：US20050081785A1
公开(公告)日：2005-04-21
申请号：US10965220
申请日：2004-10-14
IPC分类号： B05C3/00 , B05C19/02 , C23C18/16 , C23C18/28 , C23F1/00 , C25D7/12 , H01L21/288 , H01L21/768
CPC分类号： H01L21/76838 , C23C18/1601 , C23C18/1619 , C23C18/1628 , C23C18/1678 , C23C18/1682 , C23C18/1872 , C23C18/28 , H01L21/288 , Y10S134/902
摘要： Embodiments of the invention generally provide a fluid processing platform. The platform includes a mainframe having a substrate transfer robot, at least one substrate cleaning cell on the mainframe, and at least one processing enclosure. The processing enclosure includes a gas supply positioned in fluid communication with an interior of the processing enclosure, a first fluid processing cell positioned in the enclosure, a first substrate head assembly positioned to support a substrate for processing in the first fluid processing cell, a second fluid processing cell positioned in the enclosure, a second head assembly positioned to support a substrate for processing in the second fluid processing cell, and a substrate shuttle positioned between the first and second fluid processing cells and being configured to transfer substrates between the fluid processing cells and the mainframe robot.
摘要翻译： 本发明的实施例通常提供流体处理平台。 平台包括具有基板传送机器人的主机，主机上的至少一个基板清洁单元，以及至少一个处理机壳。 处理外壳包括定位成与处理外壳的内部流体连通的气体供应源，位于外壳中的第一流体处理单元，定位成支撑基板以在第一流体处理单元中进行处理的第一基板头组件，第二流体处理单元 位于外壳中的流体处理单元，定位成支撑用于在第二流体处理单元中进行处理的基板的第二头部组件，以及位于第一和第二流体处理单元之间的衬底梭，并且构造成将衬底在流体处理单元 和主机机器人。
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公开(公告)号：US07542132B2
公开(公告)日：2009-06-02
申请号：US11830202
申请日：2007-07-30
CPC分类号： G01N21/65
摘要： A method for measuring the concentration of the metal solution and reducing agent solution within the electroless plating solution is disclosed. Raman spectroscopy is used to measure the concentration of each solution within the electroless plating solution after they have been mixed together. By measuring the concentration of each solution prior to providing the solution to a plating cell, the concentration of the individual solutions can be adjusted so that the targeted concentration of each solution is achieved. Additionally, each solution can be individually analyzed using Raman spectroscopy prior to mixing with the other solutions. Based upon the Raman spectroscopy measurements of the individual solutions prior to mixing, the individual components that make up each solution can be adjusted prior to mixing so that the targeted component concentration can be achieved.
摘要翻译： 公开了一种用于测量化学镀溶液中的金属溶液和还原剂溶液的浓度的方法。 拉曼光谱法用于测量化学镀溶液混合在一起后每种溶液的浓度。 通过在将溶液提供给电镀池之前测量每种溶液的浓度，可以调节各溶液的浓度，从而实现每种溶液的目标浓度。 此外，每个溶液可以在与其他溶液混合之前使用拉曼光谱单独分析。 基于混合前单个溶液的拉曼光谱测量，可以在混合之前调整组成每种溶液的各个组分，从而可以实现目标组分浓度。
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公开(公告)号：US07473339B2
公开(公告)日：2009-01-06
申请号：US10826489
申请日：2004-04-16
申请人： Allen L. D'Ambra , Arulkumar Shanmugasundram , Michael X. Yang , Yevgeniy (Eugene) Rabinovich , Dmitry Lubomirsky
发明人： Allen L. D'Ambra , Arulkumar Shanmugasundram , Michael X. Yang , Yevgeniy (Eugene) Rabinovich , Dmitry Lubomirsky
CPC分类号： C25D17/00
摘要： Embodiments of the invention generally provide a fluid delivery system for an electrochemical plating platform. The fluid delivery system is configured to supply multiple chemistries to multiple plating cells with minimal bubble formation in the fluid delivery system. The system includes a solution mixing system, a fluid distribution manifold in communication with the solution mixing system, a plurality of fluid conduits in fluid communication with the fluid distribution manifold, and a plurality of fluid tanks, each of the plurality of fluid tanks being in fluid communication with at least one of the plurality of fluid conduits.
摘要翻译： 本发明的实施方案通常提供用于电化学电镀平台的流体输送系统。 流体输送系统被配置为在流体输送系统中以最小的气泡形成向多个电镀单元提供多个化学物质。 该系统包括溶液混合系统，与溶液混合系统连通的流体分配歧管，与流体分配歧管流体连通的多个流体导管和多个流体箱，多个流体箱中的每一个处于 与多个流体导管中的至少一个流体连通。
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