公开(公告)号：US20180033608A1

公开(公告)日：2018-02-01

申请号：US15660394

申请日：2017-07-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takahiro MIYAHARA ,  Daisuke SUZUKI ,  Hiroki MURAKAMI

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/285 ,  C23C16/46 ,  C23C16/34 ,  C23C16/44 ,  C23C16/52 ,  H01L29/49 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/0236 ,  C23C16/0272 ,  C23C16/04 ,  C23C16/34 ,  C23C16/345 ,  C23C16/4412 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45546 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/46 ,  C23C16/52 ,  C23C16/56 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02312 ,  H01L21/285 ,  H01L21/31116 ,  H01L21/32 ,  H01L29/4983 ,  H01L29/66553

Abstract: A method for forming a nitride film is provided. The method includes preparing a substrate to be processed, the substrate having a first base film formed of a material having a relatively long incubation time and a second base film formed of a material having a relatively short incubation time with respect to a nitride film, forming a nitride film on the substrate by means of ALD or CVD using a raw material gas and a nitriding gas while heating the substrate to a predetermined temperature, and etching nitride on the first base film to be removed by supplying an etching gas to thereby expose a film surface of the first base film, wherein the forming the nitride film and the etching the nitride are repeatedly performed a predetermined number of times to selectively form the nitride film on the second base film.

公开(公告)号：US20170278697A1

公开(公告)日：2017-09-28

申请号：US15465789

申请日：2017-03-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroki MURAKAMI ,  Takahiro MIYAHARA ,  Daisuke SUZUKI

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/52 ,  C23C16/34

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45534 ,  C23C16/52 ,  H01L21/02211 ,  H01L21/0228

Abstract: There is provided a method for forming a nitride film on a substrate to be processed by a thermal ALD which repeats: supplying a film forming raw material gas to the substrate to be processed while heating the substrate to be processed to a predetermined temperature; and supplying a nitriding gas to the substrate to be processed, the nitride film forming method comprises supplying a chlorine-containing gas to the substrate to be processed after the supplying the film forming raw material gas.

公开(公告)号：US20160126103A1

公开(公告)日：2016-05-05

申请号：US14919381

申请日：2015-10-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke SUZUKI ,  Youichirou CHIBA ,  Takumi YAMADA

IPC: H01L21/285 ,  H01L21/02 ,  C30B29/06 ,  H01L21/306 ,  C30B1/02 ,  H01L21/324 ,  H01L21/768

CPC classification number: H01L21/28525 ,  C23C16/045 ,  C30B1/023 ,  C30B29/06 ,  C30B29/08 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/324 ,  H01L21/743 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76879

Abstract: There is provided a method of filling a recess of a workpiece, which includes: forming a first thin film made of a semiconductor material along a wall surface defining a recess in a semiconductor substrate; annealing the workpiece within a vessel whose internal process is set to a first pressure, and forming an epitaxial region which is generated by crystallizing the semiconductor material of the first thin film, along a surface defining the recess, without moving the first thin film; forming a second thin film made of the semiconductor material along the wall surface defining the recess; and annealing the workpiece within the vessel whose internal pressure is set to a second pressure lower than the first pressure, and forming a further epitaxial region which is generated by crystallizing the semiconductor material of the second thin film which is moved toward a bottom of the recess.

Abstract translation: 提供了填充工件的凹部的方法，其包括：沿着限定半导体衬底中的凹部的壁表面形成由半导体材料制成的第一薄膜; 在其内部工艺设定为第一压力的容器内对工件进行退火，以及形成沿着限定凹部的表面使第一薄膜的半导体材料结晶而不移动第一薄膜产生的外延区域; 沿着限定所述凹部的壁表面形成由所述半导体材料制成的第二薄膜; 以及将内部压力设定为低于第一压力的第二压力的容器内的工件退火，以及形成另外的外延区域，该外延区域通过使朝向凹部的底部移动的第二薄膜的半导体材料结晶而产生 。

公开(公告)号：US20160071728A1

公开(公告)日：2016-03-10

申请号：US14844193

申请日：2015-09-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi TAKAGI ,  Kazuya TAKAHASHI ,  Hiroki MURAKAMI ,  Daisuke SUZUKI

IPC: H01L21/02 ,  C23C16/44 ,  C23C16/52 ,  C30B29/52 ,  C30B1/04 ,  C30B29/06 ,  C30B29/08 ,  C23C16/455 ,  C30B1/02

CPC classification number: H01L21/02532 ,  C23C16/02 ,  C23C16/22 ,  C23C16/24 ,  C30B1/026 ,  C30B1/04 ,  C30B29/08 ,  C30B29/52 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02667 ,  H01L21/02669

Abstract: There is provided a method of forming a film on a surface to be processed of a workpiece, the method including: accommodating the workpiece with a single-crystallized substance formed on the surface to be processed, into a processing chamber; supplying a crystallization suppressing process gas into the processing chamber such that a crystallization of the single-crystallized substance formed on the surface to be processed is suppressed; and supplying a source gas into the processing chamber to form an amorphous film on the surface to be processed of the workpiece.

Abstract translation: 提供了在被加工物的表面上形成膜的方法，该方法包括：将形成在待处理表面上的单结晶物质的工件容纳在处理室中; 向处理室供给结晶抑制处理气体，使得抑制形成在被处理面上的单结晶物质的结晶化; 以及将源气体供应到所述处理室中以在所述被加工物的表面上形成非晶膜。