公开(公告)号：US20210013005A1

公开(公告)日：2021-01-14

申请号：US16506202

申请日：2019-07-09

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Peter Ventzek ,  Alok Ranjan ,  Barton Lane ,  Justin Moses ,  Chelsea DuBose

IPC: H01J37/32 ,  C23C16/509 ,  H01L21/67 ,  H01L21/683

Abstract: In one exemplary embodiment described herein are innovative plasma processing methods and system that utilize direct measurement of direct current (DC) field or self-bias voltage (Vdc) in a plasma processing chamber. In one embodiment, a non-plasma contact measurement using the electric field effect from Vdc is provided. The Vdc sensing method may be robust to a variety of process conditions. In one embodiment, the sensor is integrated with any focus ring material (for example, quartz or doped-undoped silicon). Robust extraction of the Vdc measurement signal may be used for process control. In one embodiment, the sensor may be integrated, at least in part, with the substrate being processed in the chamber.

公开(公告)号：US20200273678A1

公开(公告)日：2020-08-27

申请号：US16405244

申请日：2019-05-07

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Alok Ranjan ,  Barton Lane ,  Peter Ventzek ,  Justin Moses ,  Chelsea DuBose

IPC: H01J37/32 ,  H01L21/67 ,  G05B19/418

Abstract: Methods and systems are disclosed for focus ring thickness measurement and feedback control within process chambers. For disclosed embodiments, in-chamber sensors measure physical parameters associated with focus rings, and these measurements are used to determine thickness for the focus rings. The thickness determinations can be used to detect when a focus ring should be replaced and can also be used as feedback to adjust the position of the focus rings within the chamber. For one embodiment, measurements from ultrasonic sensors are used to make thickness determinations for focus rings. For further embodiments, these ultrasonic sensors are positioned at end portions of focus ring lift pins. Other sensors can also be used such as capacitive sensors, resistive sensors, and/or other desired sensors. Further variations and implementations can also be achieved using in-chambers sensors to facilitate focus ring thickness determinations.

公开(公告)号：US10388528B2

公开(公告)日：2019-08-20

申请号：US15164312

申请日：2016-05-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Lee Chen ,  Zhiying Chen ,  Jianping Zhao ,  Merritt Funk

IPC: H01J37/32 ,  H01L21/263 ,  H01L21/67

Abstract: This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system that may be configured to enable non-ambipolar diffusion to counter ion loss to the chamber wall. The plasma processing system may include a ring cavity coupled to the plasma processing system that is in fluid communication with plasma generated in the plasma processing system. The ring cavity may be coupled to a power source to form plasma that may diffuse ions into the plasma processing system to minimize the impact of ion loss to the chamber wall.

公开(公告)号：US09947515B2

公开(公告)日：2018-04-17

申请号：US14204840

申请日：2014-03-11

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Jianping Zhao ,  Lee Chen ,  Toshihiko Iwao ,  Toshihisa Nozawa ,  Zhiying Chen ,  Peter Ventzek

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32229 ,  H01J37/32211 ,  H01J37/32238 ,  H01L21/67017 ,  H01L21/67069

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electric field may interact with process gas in the processing chamber to generate plasma for treating the substrate. The interior cavity may be isolated from the process chamber by a dielectric component that covers the continuous slit. The power transmission element may be used to control plasma density within the process chamber, either by itself or in combination with other plasma sources.

公开(公告)号：US09793095B2

公开(公告)日：2017-10-17

申请号：US14204887

申请日：2014-03-11

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Jianping Zhao ,  Lee Chen ,  Toshihiko Iwao ,  Toshihisa Nozawa ,  Zhiying Chen ,  Peter Ventzek

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32229 ,  H01J37/32211 ,  H01J37/32238 ,  H01L21/67017 ,  H01L21/67069

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electric field may interact with process gas in the processing chamber to generate plasma for treating the substrate. The interior cavity may be isolated from the process chamber by a dielectric component that covers the continuous slit. The power transmission element may be used to control plasma density within the process chamber, either by itself or in combination with other plasma sources.

公开(公告)号：US20160300738A1

公开(公告)日：2016-10-13

申请号：US15093031

申请日：2016-04-07

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Lee Chen ,  Barton G. Lane ,  Merritt Funk ,  Radha Sundararajan

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32192 ,  H01J37/32568 ,  H01J37/32577

Abstract: The present invention provides a SWP (surface wave plasma) processing system that does not create underdense conditions when operating at low microwave power and high gas pressure, thereby achieving a larger process window. The DC ring subsystem can be used to adjust the edge to central plasma density ratio to achieve uniformity control in the SWP processing system.

Abstract translation: 本发明提供了一种SWP（表面波等离子体）处理系统，其在低微波功率和高气体压力下工作时不会产生过度条件，从而实现更大的工艺窗口。 DC环形子系统可用于调整边缘到中心等离子体密度比，以实现SWP处理系统的均匀性控制。

公开(公告)号：US20160293389A1

公开(公告)日：2016-10-06

申请号：US15088834

申请日：2016-04-01

Applicant: Tokyo Electron Limited ,  University of Houston System

Inventor： Lee Chen ,  Demetre J. Economou ,  Jianping Zhao ,  Merritt Funk

IPC: H01J37/32

CPC classification number: H01J37/32669 ,  H01J37/3222 ,  H01J37/32293

Abstract: A method and apparatus is provided for obtaining a low average electron energy flux onto a substrate in a processing chamber. A processing chamber includes a substrate support therein for chemical processing. An energy source induced plasma, and ion propelling means, directs energetic plasma electrons toward the substrate support. A dipole ring magnet field is applied perpendicular to the direction of ion travel, to effectively prevent electrons above an acceptable maximum energy level from reaching the substrate holder. Rotation of the dipole magnetic field reduces electron non-uniformities.

Abstract translation: 提供了一种用于获得在处理室中的基板上的低平均电子能量通量的方法和装置。 处理室包括用于化学处理的基板支撑件。 能量源诱导的等离子体和离子推进装置将能量等离子体电子引导到衬底支撑。 垂直于离子行进方向施加偶极环磁场，以有效地防止高于可接受的最大能级的电子到达衬底保持器。 偶极磁场的旋转减小电子不均匀性。

公开(公告)号：US09396900B2

公开(公告)日：2016-07-19

申请号：US13676265

申请日：2012-11-14

Applicant: Tokyo Electron Limited

Inventor： Barton Lane ,  Lee Chen ,  Peter L. G. Ventzek ,  Merritt Funk ,  Jianping Zhao ,  Radha Sundararajan

IPC: H01J7/24 ,  H05B31/26 ,  H01J1/00 ,  H01J37/32 ,  H05H1/46

CPC classification number: H01J1/00 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32174 ,  H05H1/46 ,  H05H2001/4652 ,  H05H2001/4675

Abstract: A radio frequency (RF) power coupling system is provided. The system has an RF electrode configured to couple RF power to plasma in a plasma processing system, multiple power coupling elements configured to electrically couple RF power at multiple power coupling locations on the RF electrode, and an RF power system coupled to the multiple power coupling elements, and configured to couple an RF power signal to each of the multiple power coupling elements. The multiple power coupling elements include a center element located at the center of the RF electrode and peripheral elements located off-center from the center of the RF electrode. A first peripheral RF power signal differs from a second peripheral RF power signal in phase.

Abstract translation: 提供射频（RF）功率耦合系统。 该系统具有被配置为在等离子体处理系统中将RF功率耦合到等离子体的RF电极，多个功率耦合元件被配置为在RF电极上的多个功率耦合位置处电耦合RF功率，以及耦合到多功率耦合的RF功率系统 元件，并且被配置为将RF功率信号耦合到多个功率耦合元件中的每一个。 多个功率耦合元件包括位于RF电极中心的中心元件和位于RF电极中心偏离中心的外围元件。 第一外围RF功率信号与第二外围RF功率信号同相不同。

公开(公告)号：US09288890B1

公开(公告)日：2016-03-15

申请号：US14530349

申请日：2014-10-31

Applicant: Tokyo Electron Limited

Inventor： Lee Chen ,  Merritt Funk ,  Zhiying Chen

IPC: H05H3/02 ,  H05H3/00

CPC classification number: H05H3/02

Abstract: Embodiments include a chemical processing apparatus and method of using the chemical processing apparatus to treat a substrate with a mono-energetic space-charge neutralized neutral beam-activated chemical process which is comprised of a substantially anisotropic beam of neutral particles. The chemical processing apparatus comprises a first plasma chamber for forming a first plasma at a first plasma potential, and a second plasma chamber for forming a second plasma at a second plasma potential greater than the first plasma potential, wherein the second plasma is formed using electron flux from the first plasma. Further, the chemical processing apparatus comprises an ungrounded dielectric (insulator) neutralizer grid configured to expose a substrate in the second plasma chamber to the substantially anisotropic beam of neutral particles traveling from the neutralizer grid.

Abstract translation: 实施方案包括化学处理装置和使用化学处理装置用基本上各向异性的中性粒子束组成的单能空间电荷中和的中性束活化化学工艺处理衬底的方法。 化学处理装置包括用于形成第一等离子体电位的第一等离子体的第一等离子体室和用于在大于第一等离子体电位的第二等离子体电位下形成第二等离子体的第二等离子体室，其中使用电子 来自第一等离子体的通量。 此外，化学处理装置包括未被接地的电介质（绝缘体）中和器栅格，其被配置为将第二等离子体室中的衬底暴露于从中和器栅格行进的基本上各向异性的中性粒子束。

公开(公告)号：US20150041432A1

公开(公告)日：2015-02-12

申请号：US14168565

申请日：2014-01-30

Applicant: Tokyo Electron Limited

Inventor： Zhiying Chen ,  Lee Chen ,  Merritt Funk

IPC: H01J37/32 ,  C23C16/505 ,  H01J37/08 ,  C23C16/50 ,  H01J37/06

CPC classification number: H01J37/32899 ,  H01J37/30 ,  H01J37/32082 ,  H01J37/3233

Abstract: A processing system is disclosed, having an electron beam source chamber that excites plasma to generate an electron beam, and an ion beam source chamber that houses a substrate and also excites plasma to generate an ion beam. The processing system also includes a dielectric injector coupling the electron beam source chamber to the ion beam source chamber that simultaneously injects the electron beam and the ion beam and propels the electron beam and the ion beam in opposite directions. The voltage potential gradient between the electron beam source chamber and the ion beam source chamber generates an energy field that is sufficient to maintain the electron beam and ion beam as a plasma treats the substrate so that radio frequency (RF) power initially applied to the processing system to generate the electron beam can be terminated thus improving the power efficiency of the processing system.

Abstract translation: 公开了一种处理系统，其具有激发等离子体以产生电子束的电子束源室和容纳衬底并且还激发等离子体以产生离子束的离子束源室。 处理系统还包括将电子束源室耦合到离子束源室的电介质注入器，其同时注入电子束和离子束，并以相反方向推进电子束和离子束。 电子束源室和离子束源室之间的电压电位梯度产生足以维持作为等离子体的电子束和离子束的能量场，以使射频（RF）功率最初施加到处理 可以终止产生电子束的系统，从而提高处理系统的功率效率。