摘要:
A single-flux-quantum digital device includes a first superconducting line extended in a large ring, a second superconducting line connected to the first superconducting line, a superconducting single electron transistor for regulating a supercurrent flowing through the second superconducting line, and a small tunnel junction device for detecting a change in the supercurrent flowing through the first superconducting line. The first superconducting line is extended in a large ring. The second superconducting line divides the large ring into two small rings which are substantially the same in shape and area. The small tunnel junction device is connected to a point where the first and the second superconducting line are joined.
摘要:
An X-ray generating apparatus in which X-rays are emitted from laser plasma, the X-ray generating apparatus including a strong magnetic field generating device for generating a magnetic field component substantially parallel with the target surface in the vicinity of the laser plasma. The magnetic field component is arranged to generate a magnetic force which acts directly on charged particles in the laser plasma to bend the tracks of the charged particles, causing the charged particles to be confined in a magnetic field formed by the magnetic field component. The magnetic flux of the strong magnetic field is directed to a direction which is different from the direction in which the laser plasma is generated. An X-ray supply object is disposed in the laser plasma generating direction. Charged particles, liable to be directed to the X-ray supply object, are mainly confined in the strong magnetic field.
摘要:
An object is to provide an ultraviolet light-emitting device in which a p-type semiconductor which has high conductivity and an emission peak in ultraviolet region, and emits light efficiently is used. The p-type semiconductor is prepared by supplying a p-type impurity raw material at the same time or after starting supply of predetermined types of crystal raw materials, besides before starting supply of other types of crystal raw materials than the predetermined types of crystal raw materials in one cycle wherein all the types of crystal raw materials of the plural types of crystal raw materials are supplied in one time each in case of making crystal growth by supplying alternately the plural types of crystal raw materials in a pulsed manner.
摘要:
The present invention provides a practically effective three-dimensional photonic crystal, and a process for the production thereof as well as a probe used therefor wherein a three-dimensional photonic crystal comprises a plurality of two-dimensional photonic crystal plates each provided with through holes and different types of two-dimensional photonic crystals; a plurality of positioning members to be located in the above-described through holes in the plurality of the two-dimensional photonic crystal plates; and the above-described positioning members being located in the through holes in the two-dimensional photonic crystal plates adjacent to each other among the pluralities of two-dimensional photonic crystal plates to be laminated in such that the pluralities of the two-dimensional photonic crystal plates obtain a periodic structure in response to wavelengths of light.
摘要:
A method for the formation of a semiconductor layer by which a defect density of structural defects, particularly a dislocation density of threading dislocations in the resulting semiconductor layer can be remarkably reduced, so that hours of work can be shortened as well as a manufacturing cost can be reduced without requiring any complicated process comprises supplying a structural defect suppressing material for suppressing structural defects in the semiconductor layer onto a surface of the layer of a material from which the semiconductor layer is to be formed.
摘要:
An X-ray generating apparatus generates X-rays from plasma formed by irradiating a laser beam to a target. The apparatus includes an X-ray transmitting film disposed at at least one side of the target with a predetermined gap provided therebetween. The X-ray transmitting film has a thickness such that the film is not broken due to an action in the X-ray generating process. The X-rays are taken out through the X-ray transmitting film. An X-ray microscope can employ such an X-ray generating apparatus, with the X-rays from the apparatus being guided to the sample, with the sample to be observed being disposed in the vicinity of the X-ray transmitting film, and with a detecting device for detecting an X-ray image formed by X-rays transmitted through the sample.
摘要:
An ion-producing apparatus comprises an electron-producing vessel having an electron-producing chamber, an ion-producing vessel having an ion-producing chamber communicating with the electron-producing chamber, a cathode provided at one end of the electron-producing vessel, an accelerating electrode provided within the ion-producing chamber, for allowing passage of electrons, an anode provided between the cathode and the accelerating electrode, and a power supply circuit for providing a potential difference between the cathode and the anode, thereby to produce electrons in the gap between the cathode and the anode. A vacuum pump is provided for evacuating gas from the ion-producing chamber. A partition is provided within the electron-producing vessel, between the cathode and the anode to divide the electron-producing vessel into a cathode-side chamber and an anode-side chamber, and hinders a gas flow from the cathode-side chamber to the anode-side chamber to apply a pressure difference between both chambers.
摘要:
An electron beam-excited ion beam source having a plasma region, an accelerating cathode, an electron beam accelerating region, an accelerating anode, an ion producing region and a target cathode in this order, and further comprising means for applying a negative electric potential to the target cathode as against the accelerating cathode and an ion extracting electrode for extracting positive ions or negative ions produced in the ion producing region whereby a high current ion beam can be obtained in a low input power.