公开(公告)号：US06413794B1

公开(公告)日：2002-07-02

申请号：US09649599

申请日：2000-08-29

申请人： Hitomi Sano ,  Masahiro Kanai ,  Hideo Tamura

发明人： Hitomi Sano ,  Masahiro Kanai ,  Hideo Tamura

IPC分类号： H01L2100

CPC分类号： H01L31/206 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/076 ,  H01L31/208 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of forming a photovoltaic element according to the present invention comprises at least the steps of depositing a metal layer on a supporting member, depositing a metal oxide layer on the above metal layer, and arranging at least one or more pin structures, each of which is formed by stacking the predetermined n-type, i-type and p-type semiconductor layers, on a substrate formed by stacking on the above supporting member, the above metal layer and the above metal oxide layer in this order, wherein a step of subjecting the supporting member having the metal layer formed thereon to heat treatment is carried out between the two steps of depositing the above metal layer and depositing the above metal oxide layer. Accordingly, the present invention provides a method of forming a photovoltaic element which enables the solution of the problem that defective portions appear in a semiconductor layer because the semiconductor layer, which functions as a photoelectric converting layer, formed on irregularities of a metal layer surface cannot fully cover the metal layer due to the existence of projecting portions or portions with great height difference on a part of the irregularities.

摘要翻译： 根据本发明的形成光电元件的方法至少包括在支撑构件上沉积金属层的步骤，在上述金属层上沉积金属氧化物层，并且布置至少一个或多个引脚结构 其通过将预定的n型，i型和p型半导体层堆叠在依次堆叠在上述支撑构件，上述金属层和上述金属氧化物层上形成的衬底上而形成，其中步骤 在沉积上述金属层并沉积上述金属氧化物层的两个步骤之间进行使其上形成有金属层的支撑构件进行热处理。 因此，本发明提供一种形成光电元件的方法，由于在金属层表面的不规则处形成的作为光电转换层的半导体层不能形成，所以能够解决缺陷部分出现在半导体层中的问题 由于在不规则部分上存在突出部分或高度差大的部分，完全覆盖金属层。

公开(公告)号：US06368944B1

公开(公告)日：2002-04-09

申请号：US09664219

申请日：2000-09-18

申请人： Shotaro Okabe ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

发明人： Shotaro Okabe ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

IPC分类号： H01L2120

CPC分类号： H01L31/076 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： The photovoltaic element of the present invention is a photovoltaic element comprised of a semiconductor-junctioned element, characterized in that the element includes a first electrically conductive type semiconductor layer, a non-crystalline i type semiconductor layer, a microcrystalline i type semiconductor layer and a microcrystalline second electrically conductive type semiconductor layer and is pin-junctioned, and a method of and an apparatus for manufacturing the same are characterized by efficiently and continuously mass-producing the photovoltaic element having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency. Thereby, there are provided a photovoltaic element in which the junction interface between the non-crystalline i type layer and the microcrystalline electrically conductive type layer has good grating consistency and which has an excellent current-voltage characteristic and excellent photoelectric conversion efficiency, and a method of and an apparatus for continuously mass-producing the same.

摘要翻译： 本发明的光电元件是由半导体结合元件构成的光电元件，其特征在于，所述元件包括第一导电型半导体层，非晶i型半导体层，微晶i型半导体层和 微结晶第二导电型半导体层，并且是引脚连接的，其制造方法及其制造方法的特征在于有效且连续地批量生产具有优异的电流 - 电压特性和优异的光电转换效率的光电元件。 因此，提供了一种光电元件，其中非晶i型层和微晶导电型层之间的结界面具有良好的光栅一致性，并且具有优异的电流 - 电压特性和优异的光电转换效率，以及一种方法 以及用于连续批量生产该装置的装置。

公开(公告)号：US06367502B1

公开(公告)日：2002-04-09

申请号：US09666182

申请日：2000-09-21

申请人： Masahiro Kanai ,  Etsumi Nagaya

发明人： Masahiro Kanai ,  Etsumi Nagaya

IPC分类号： F16K3500

CPC分类号： A61M5/141 ,  A61M5/152 ,  A61M5/16877 ,  A61M2209/04 ,  Y10T137/7069 ,  Y10T137/8275 ,  Y10T137/87708

摘要： A flow control device has a body (41), a plurality of elastic flow control tube (51-54) provided in the body (41), a single fluid path (55) in communication with the flow control tube (51-54), a slider (56) slidable relative to the body (41), and a valve mechanism (71) for selectively pressing and shutting the flow control tube (51-54) in accordance with a slide position of the slider (56).

摘要翻译： 流量控制装置具有本体（41），设置在主体（41）中的多个弹性流量控制管（51-54），与流量控制管（51-54）连通的单个流体路径（55） 相对于主体（41）滑动的滑块（56）和用于根据滑块（56）的滑动位置选择性地按压和关闭流量控制管（51-54）的阀机构（71）。

公开(公告)号：US06312411B1

公开(公告)日：2001-11-06

申请号：US09425169

申请日：1999-10-22

申请人： Masahiro Kanai

发明人： Masahiro Kanai

IPC分类号： A61M100

CPC分类号： A61M5/1424 ,  A61M2005/1405

摘要： A fluid supplying apparatus having a rubber elastic film (11) with fluid contained therein, an upstream tube (30), an intermediate station (40) disposed at a distal end of the upstream tube (30) and a downstream tube (27) connected to the intermediate station (40) is provided. The upstream tube (30) has two flow paths (31A and 32A) formed in a predetermined length extending in a longitudinal direction. The intermediate station (40) has a case (41), the case (41) having a fluid outlet (51) to which the downstream tube (27) is connected, a first communicating channel (52) for intercommunicating the fluid outlet (51) and one of the flow paths (31A), a reservoir (53) in communication with the other flow path (32A), a second communicating channel (55) having a check valve (54) at an intermediate portion thereof and intercommunicating the reservoir (53) and the fluid outlet (51), and a pressing member (56) for discharging the fluid stored in the reservoir (53) to the second communicating channel (55).

摘要翻译： 一种具有橡胶弹性膜（11）的流体供给装置，其中容纳有流体，上游管（30），设置在上游管（30）的远端的中间站（40）和连接有上游管 提供到中间站（40）。 上游管（30）具有以沿长度方向延伸的预定长度形成的两个流动路径（31A和32A）。 中间站（40）具有壳体（41），壳体（41）具有连接下游管（27）的流体出口（51），用于使流体出口（51）相互连通的第一连通通道 ）和一个流动路径（31A），与另一个流动路径（32A）连通的储存器（53），在其中间部分处具有止回阀（54）的第二连通通道（55），并且将储存器 （53）和流体出口（51），以及用于将存储在储存器（53）中的流体排放到第二连通通道（55）的按压构件（56）。

公开(公告)号：US06287943B1

公开(公告)日：2001-09-11

申请号：US09363825

申请日：1999-07-30

申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Koda ,  Takahiro Yajima

发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Koda ,  Takahiro Yajima

IPC分类号： H01L2120

CPC分类号： C23C16/509 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/02425 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L31/1824 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/545 ,  Y02P70/521

摘要： The invention provides a process for producing a semiconductor layer by introducing a raw gas into a discharge chamber and supplying high-frequency power to the chamber to decompose the raw gas by discharge, thereby forming a semiconductor layer on a substrate within the discharge chamber, the process comprising the steps of supplying high-frequency power of at least very high frequency (VHF) as the high-frequency power; supplying bias power of direct current power and/or high-frequency power of radio-frequency (RF) together with the high-frequency power of VHF to the discharge chamber; and controlling a direct current component of an electric current flowing into an electrode, to which the bias power is supplied, so as to fall within a range of from 0.1 A/m2 to 10 A/m2 in terms of a current density based on the area of an inner wall of the discharge chamber. A good-quality semiconductor layer can be deposited over a large area at a high speed.

摘要翻译： 本发明提供一种通过将原料气体引入放电室并向室内供给高频电力以通过放电分解原料气体从而在放电室内的基板上形成半导体层来制造半导体层的方法， 过程包括以下步骤：提供至少非常高频（VHF）的高频功率作为高频功率; 将直流电力和/或射频（RF）的高频功率与VHF的高频功率一起提供给放电室; 并且以电流密度为基础控制流入施加偏压功率的电极的电流的直流分量，以0.1A / m 2至10A / m 2的范围内 放电室内壁面积。 高质量的半导体层可以在大面积上高速沉积。

公开(公告)号：US06153823A

公开(公告)日：2000-11-28

申请号：US37825

申请日：1998-03-11

申请人： Atsushi Shiozaki ,  Keishi Saito ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Naoto Okada

发明人： Atsushi Shiozaki ,  Keishi Saito ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Naoto Okada

IPC分类号： H01L31/04 ,  H01L31/048 ,  H01L31/076 ,  H01L31/20 ,  H02J7/35 ,  H01L25/00

CPC分类号： H02J7/35 ,  B32B17/04 ,  B32B17/10788 ,  H01L31/048 ,  H01L31/076 ,  Y02B10/12 ,  Y02B10/14 ,  Y02E10/548 ,  Y10S136/293

摘要： A photoelectric conversion element comprising a substrate, a plurality of semiconductor junctions made of non-single-crystalline semiconductors formed on the substrate, and a surface material covering the semiconductor junctions is provided. The semiconductor junctions have respective absorption spectra different from each other and respective photo-deterioration rates different from each other. A photo-current generated by the semiconductor junction of the least deterioration rate is larger than that by the semiconductor junction of the greatest deterioration rate when no surface material is present, and when present, the surface material absorbs light in a range corresponding to a part of the absorption spectrum of the semiconductor junction of the least deterioration rate, so that the photo-current generated by the semiconductor junction of the least deterioration rate becomes smaller than that by the semiconductor junction of the greatest deterioration rate.

摘要翻译： 提供一种光电转换元件，其包括基板，形成在基板上的非单晶半导体的多个半导体结以及覆盖半导体结的表面材料。 半导体结具有彼此不同的各自的吸收光谱，并且各自的光劣化率彼此不同。 当没有表面材料存在时，由劣化率最小的半导体结产生的光电流大于具有最大劣化率的半导体结的光电流，并且当存在时，表面材料在相当于一部分的范围内吸收光 具有最小劣化率的半导体结的吸收光谱，使得由劣化率最小的半导体结产生的光电流变得小于具有最大劣化率的半导体结的光电流。

公开(公告)号：US6031198A

公开(公告)日：2000-02-29

申请号：US80922

申请日：1998-05-19

申请人： Koichiro Moriyama ,  Yukito Aota ,  Masahiro Kanai ,  Hirokazu Otoshi

发明人： Koichiro Moriyama ,  Yukito Aota ,  Masahiro Kanai ,  Hirokazu Otoshi

IPC分类号： H05H1/46 ,  C23C16/50 ,  C23C16/511 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  B23K9/00

CPC分类号： H01J37/32165 ,  H01J37/32935 ,  H01J37/3299

摘要： A plasma processing method for processing a substrate includes a discharge beginning step of supplying a second high-frequency power into a processing chamber through an impedance matching circuit and then supplying a first high-frequency power larger than a power used in processing into the processing chamber to generate a plasma. An adjustment step of reducing the first high-frequency power to be close to the value used in processing, increasing the second high-frequency power to be close to the value in processing, and then adjusting the first high-frequency power to obtain a plasma strength of a predetermined value is part of the method. The plasma processing step of causing the impedance matching circuit to perform a matching operation and simultaneously adjusting the first high-frequency power to obtain a plasma strength of a desired value in processing is also part of the method. Plasma discharge can be automatically, smoothly begun with high reproducibility, and stable plasma discharge can be maintained. Even in the case of disappearance of discharge, plasma discharge can be quickly restarted.

摘要翻译： 用于处理衬底的等离子体处理方法包括：放电开始步骤，通过阻抗匹配电路将第二高频电力提供到处理室，然后将大于处理中使用的功率的第一高频功率提供给处理室 以产生等离子体。 将第一高频功率降低到接近于处理中使用的值的调整步骤，将第二高频功率提高到接近处理值，然后调整第一高频功率以获得等离子体 预定值的强度是该方法的一部分。 等离子体处理步骤是使阻抗匹配电路执行匹配操作并且同时调节第一高频功率以获得处理中期望值的等离子体强度。 等离子体放电可以以高再现性自动平稳地开始，并且可以保持稳定的等离子体放电。 即使在放电消失的情况下，可以快速重新开始等离子体放电。

公开(公告)号：US5968274A

公开(公告)日：1999-10-19

申请号：US754066

申请日：1996-11-20

申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Takehito Yoshino ,  Akira Sakai ,  Tadashi Hori

发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Takehito Yoshino ,  Akira Sakai ,  Tadashi Hori

IPC分类号： C23C14/56 ,  C23C16/54 ,  H01L31/20

CPC分类号： H01L31/206 ,  C23C14/562 ,  C23C14/568 ,  C23C16/545 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： The present invention aims to provide a continuous forming method and apparatus for functional deposited films having excellent characteristics while preventing any mutual mixture of gases between film forming chambers having different pressures, wherein semiconductor layers of desired conductivity type are deposited on a strip-like substrate within a plurality of film forming chambers, by plasma CVD, while the strip-like substrate is moved continuously in a longitudinal direction thereof through the plurality of film forming chambers connected via gas gates having means for introducing a scavenging gas into a slit-like separation passage, characterized in that at least one of the gas gates connecting the i-type layer film forming chamber for forming the semiconductor junction and the n- or p-type layer film forming chamber having higher pressure than the i-type layer film forming chamber has the scavenging gas introducing position disposed on the n- or p-type layer film forming chamber side off from the center of the separation chamber of the gas gate.

摘要翻译： 本发明的目的在于提供具有优异特性的功能性沉积膜的连续成型方法和装置，同时防止在具有不同压力的成膜室之间任何相互混合的气体，其中期望的导电类型的半导体层沉积在带状衬底上 多个成膜室，通过等离子体CVD，同时带状基板沿其长度方向连续移动通过多个通过气门连接的成膜室，其具有用于将清除气体引入狭缝状分离通道 其特征在于，连接形成半导体结的i型层成膜室和i型层成膜室的n型或p型层成膜室中的至少一个气门具有比i型层成膜室高的压力 所述清除气体导入位置设置在形成有n型或p型层的膜上 r侧从气门的分离室的中心离开。

公开(公告)号：US5897332A

公开(公告)日：1999-04-27

申请号：US717629

申请日：1996-09-23

申请人： Tadashi Hori ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Yuzo Kohda ,  Tomonori Nishimoto ,  Takahiro Yajima

发明人： Tadashi Hori ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Yuzo Kohda ,  Tomonori Nishimoto ,  Takahiro Yajima

IPC分类号： H01L31/04 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/206 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A method for manufacturing a photoelectric conversion element containing at least one pin junction, wherein a diffusion preventing layer is provided between an n-type layer and an i-type layer and/or between an i-type layer and a p-type layer, and the diffusion preventing layer is deposited such that deposition temperature differs in its thickness direction.

摘要翻译： 一种制造包含至少一个pin结的光电转换元件的方法，其中在n型层和i型层之间和/或i型层和p型层之间设置有扩散防止层， 并且淀积温度在其厚度方向上不同而沉积扩散防止层。

公开(公告)号：US5575855A

公开(公告)日：1996-11-19

申请号：US433052

申请日：1995-05-03

申请人： Masahiro Kanai ,  Yasushi Fujioka ,  Takehito Yoshino ,  Tadashi Hori

发明人： Masahiro Kanai ,  Yasushi Fujioka ,  Takehito Yoshino ,  Tadashi Hori

IPC分类号： C23C16/50 ,  C23C16/455 ,  C23C16/511 ,  C23C16/54 ,  H01L21/205 ,  H01L31/04 ,  H01L31/075 ,  H01L31/20 ,  C23C16/00

CPC分类号： C23C16/455 ,  C23C16/511 ,  C23C16/545 ,  H01L31/075 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A deposited film forming method includes the steps of: continuously carrying a long substrate into or out of a vacuum chamber, flowing a first deposited film forming gas in a reverse direction parallel to the substrate and opposite to a conveying direction of the substrate from first gas discharging means into the vacuum chamber, exhausting the gas from first gas exhausting means, flowing a second deposited film forming gas in a forward direction parallel to the substrate and equivalent to the conveying direction of the substrate, exhausting the gas through the second gas exhausting means, and applying a discharge energy to the first and second gases.

摘要翻译： 沉积膜形成方法包括以下步骤：将长衬底连续地携带到真空室中或从真空室流出，使第一沉积膜形成气体沿平行于衬底的相反方向流动并与第一气体与衬底的输送方向相反 排出装置进入真空室，从第一气体排出装置排出气体，使平行于基板的向前方向流动第二沉积成膜气体并等效于基板的输送方向，排出气体通过第二排气装置 并且向第一和第二气体施加放电能量。