公开(公告)号：US20080237860A1

公开(公告)日：2008-10-02

申请号：US11691897

申请日：2007-03-27

申请人： Tadahiro Ishizaka ,  Atsushi Gomi

发明人： Tadahiro Ishizaka ,  Atsushi Gomi

IPC分类号： H01L23/52 ,  H01L21/3205

CPC分类号： H01L21/76876 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76864 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the invention provide a method for integrating a Ru barrier film with good barrier properties into Cu metallization. The method includes exposing a substrate to a Ta-, Ti-, or W-containing precursor at a substrate temperature below the thermal decomposition temperature of the Ta-, Ti-, or W-containing precursor on the substrate to form a chemisorbed seed layer of partially decomposed Ta-, Ti-, or W-containing precursor on the substrate. The method further includes depositing a Ru barrier film on the chemisorbed seed layer, and forming bulk Cu metal on the Ru barrier film. According to additional embodiments, an interconnect structure and method of forming are provided.

摘要翻译： 本发明的实施方案提供了一种将具有良好阻隔性能的Ru阻挡膜整合到Cu金属化中的方法。 该方法包括在低于衬底上的含Ta，Ti或W的前体的热分解温度的衬底温度下将衬底暴露于含Ta，Ti或W的前体，以形成化学吸附的种子层 在基底上部分分解的Ta，Ti或W的前体。 该方法还包括在化学吸附的种子层上沉积Ru阻挡膜，并在Ru阻挡膜上形成块状Cu金属。 根据另外的实施例，提供了互连结构和形成方法。

公开(公告)号：US07338901B2

公开(公告)日：2008-03-04

申请号：US11206994

申请日：2005-08-19

申请人： Tadahiro Ishizaka

发明人： Tadahiro Ishizaka

IPC分类号： H01L21/44

CPC分类号： C23C16/52 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45542 ,  C23C16/50 ,  H01L21/28562 ,  H01L21/76841

摘要： A method for forming a thin film on a substrate layer by layer using plasma enhanced atomic layer deposition is described. The method comprises using a low power reduction step for at least one cycle in order to substantially avoid partial layer film growth, followed by using a high power reduction step for each cycle thereafter in order to increase deposition rate.

摘要翻译： 描述了使用等离子体增强的原子层沉积在基底上形成薄膜的方法。 该方法包括使用至少一个循环的低功率降低步骤，以便基本避免部分层膜生长，随后在其后的每个循环中使用高功率降低步骤，以便提高沉积速率。

公开(公告)号：US20070218704A1

公开(公告)日：2007-09-20

申请号：US11378270

申请日：2006-03-20

申请人： Tadahiro Ishizaka ,  Frank Cerio ,  Jacques Faguet

发明人： Tadahiro Ishizaka ,  Frank Cerio ,  Jacques Faguet

IPC分类号： H01L21/31

CPC分类号： H01L21/76843 ,  C23C16/32 ,  C23C16/36 ,  C23C16/45536 ,  C23C16/482 ,  H01L21/28562

摘要： A method light enhanced atomic layer deposition for forming a film on a substrate. The method includes disposing the substrate in a process chamber of a light enhanced atomic layer deposition (LEALD) system configured to perform a LEALD process; and depositing a film on the substrate using the LEALD process, where the depositing includes (a) exposing the substrate to a first process material, (b) exposing the substrate to a second process material containing a reducing agent and irradiating the substrate with a first light radiation having either no or at least partial temporal overlap with the exposing of the substrate to the second process material, (c) repeating steps (a) and (b) until the desired film has been deposited. According to one embodiment of the invention, the deposited film can be a TaCN film or a TaC film.

摘要翻译： 一种用于在基板上形成薄膜的光增强原子层沉积。 该方法包括将衬底设置在被配置为执行LEALD处理的光增强原子层沉积（LEALD）系统的处理室中; 以及使用LEALD工艺在衬底上沉积膜，其中沉积包括（a）将衬底暴露于第一工艺材料，（b）将衬底暴露于含有还原剂的第二工艺材料上，并用第一 具有或不至少部分时间重叠的光辐射与基板暴露于第二工艺材料，（c）重复步骤（a）和（b），直到所需的膜沉积为止。 根据本发明的一个实施例，沉积膜可以是TaCN膜或TaC膜。

公开(公告)号：US20070218683A1

公开(公告)日：2007-09-20

申请号：US11378263

申请日：2006-03-20

申请人： Tadahiro Ishizaka ,  Tsukasa Matsuda ,  Masamichi Hara ,  Jacques Faguet ,  Yasushi Mizusawa

发明人： Tadahiro Ishizaka ,  Tsukasa Matsuda ,  Masamichi Hara ,  Jacques Faguet ,  Yasushi Mizusawa

IPC分类号： C23C16/00 ,  H05H1/00

CPC分类号： C23C16/45542 ,  C23C16/32 ,  C23C16/36 ,  C23C16/509 ,  C23C16/56

摘要： A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, depositing a TaC or TaCN film on the substrate using the PEALD process, and modifying the deposited TaC or TaCN film by exposing the deposited TaC or TaCN film to plasma excited hydrogen or atomic hydrogen or a combination thereof in order to remove carbon from at least the plasma exposed portion of the deposited TaCN film. The method further includes forming a metal film on the modified TaCN film, where the modified TaCN film provides stronger adhesion to the metal film than the deposited TaCN film. According to one embodiment, a TaCN film is deposited from alternating exposures of TAIMATA and plasma excited hydrogen.

摘要翻译： 用于形成可用作Cu金属化阻挡膜的改性TaC或TaCN膜的方法。 该方法包括将基板设置在等离子体增强原子层沉积（PEALD）系统的处理室中，其被配置为执行PEALD工艺，使用PEALD工艺在基板上沉积TaC或TaCN膜，以及修改沉积的TaC或TaCN膜 通过将沉积的TaC或TaCN膜暴露于等离子体激发的氢或原子氢或其组合，以便从至少沉积的TaCN膜的等离子体暴露部分除去碳。 该方法还包括在改性的TaCN膜上形成金属膜，其中改性的TaCN膜比沉积的TaCN膜提供比金属膜更强的附着力。 根据一个实施方案，通过TAIMATA和等离子体激发氢的交替曝光沉积TaCN膜。

公开(公告)号：US20070116873A1

公开(公告)日：2007-05-24

申请号：US11281376

申请日：2005-11-18

申请人： Yicheng Li ,  Tadahiro Ishizaka ,  Kaoru Yamamoto ,  Atsushi Gomi ,  Masamichi Hara ,  Toshiaki Fujisato ,  Jacques Faguet ,  Yasushi Mizusawa

发明人： Yicheng Li ,  Tadahiro Ishizaka ,  Kaoru Yamamoto ,  Atsushi Gomi ,  Masamichi Hara ,  Toshiaki Fujisato ,  Jacques Faguet ,  Yasushi Mizusawa

IPC分类号： H05H1/24 ,  C23C16/00 ,  G06F19/00

CPC分类号： C23C16/45517 ,  C23C16/4401 ,  C23C16/4412 ,  H01J37/32082 ,  H01J37/32495 ,  H01J37/32522

摘要： A method, computer readable medium, and system for vapor deposition on a substrate that maintain a first assembly of the vapor deposition system at a first temperature, maintain a second assembly of the vapor deposition system at a reduced temperature lower than the first temperature, dispose the substrate in a process space of the first assembly that is vacuum isolated from a transfer space in the second assembly, and deposit a material on the substrate. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support the substrate, and a sealing assembly configured to separate the process space from the transfer space. The first assembly is configured to be maintained at a first temperature and the second assembly is configured to be maintained at a reduced temperature lower than the first temperature.

摘要翻译： 一种用于气相沉积在基板上的方法，计算机可读介质和系统，其将气相沉积系统的第一组件保持在第一温度，将气相沉积系统的第二组件保持在低于第一温度的降低的温度， 所述第一组件的处理空间中的所述衬底与所述第二组件中的传送空间真空隔离，并且将材料沉积在所述衬底上。 因此，该系统包括具有被配置为促进材料沉积的处理空间的第一组件，耦合到第一组件的第二组件，并且具有传输空间以促进衬底进入和离开沉积系统;衬底台连接 并且被配置为支撑所述基板，以及密封组件，其被配置为将所述处理空间与所述传送空间分离。 第一组件被配置为保持在第一温度，并且第二组件构造成保持在低于第一温度的降低的温度。

公开(公告)号：US08974868B2

公开(公告)日：2015-03-10

申请号：US11084176

申请日：2005-03-21

申请人： Tadahiro Ishizaka ,  Audunn Ludviksson

发明人： Tadahiro Ishizaka ,  Audunn Ludviksson

IPC分类号： H05H1/00 ,  C23C16/455 ,  H01J37/32 ,  C23C16/34 ,  H01L21/768 ,  C23C16/30 ,  H01L21/314 ,  H01L21/285 ,  H01L21/3205 ,  C23C16/14 ,  C23C16/509 ,  H01L21/316 ,  H01L21/318

CPC分类号： H01L21/76843 ,  C23C16/14 ,  C23C16/303 ,  C23C16/34 ,  C23C16/45538 ,  C23C16/45544 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32192 ,  H01J2237/335 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/31608 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/318 ,  H01L21/32051

摘要： A method for processing a substrate includes disposing the substrate in a deposition chamber configured to perform a deposition process and depositing a film on the substrate using the deposition process. The substrate having the film thereon is then transferred from the deposition chamber into a treatment chamber and a plasma cleaning process is performed on the substrate in the treatment chamber. Further processing of the substrate is performed after the plasma cleaning process.

摘要翻译： 一种用于处理衬底的方法包括将衬底设置在沉积室中，其被配置为执行沉积工艺，并使用沉积工艺在衬底上沉积膜。 然后将其上具有膜的基板从沉积室转移到处理室中，并且在处理室中的基板上进行等离子体清洁处理。 在等离子体清洗处理之后进行基板的进一步处理。

公开(公告)号：US07651568B2

公开(公告)日：2010-01-26

申请号：US11090256

申请日：2005-03-28

申请人： Tadahiro Ishizaka ,  Tsukasa Matsuda ,  Frank M. Cerio, Jr. ,  Kaoru Yamamoto

发明人： Tadahiro Ishizaka ,  Tsukasa Matsuda ,  Frank M. Cerio, Jr. ,  Kaoru Yamamoto

IPC分类号： C23C16/505 ,  C23C16/503 ,  H01L21/306

CPC分类号： C23C16/4409 ,  C23C16/4404 ,  C23C16/4412 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/5096

摘要： A plasma enhanced atomic layer deposition (PEALD) system includes a first chamber component coupled to a second chamber component to provide a processing chamber defining an isolated processing space within the processing chamber. A substrate holder is provided within the processing chamber and configured to support a substrate, a first process material supply system is configured to supply a first process material to the processing chamber and a second process material supply system is configured to supply a second process material to the processing chamber. A power source is configured to couple electromagnetic power to the processing chamber, and a sealing assembly interposed between the first and second chamber components. The sealing assembly includes a plurality of sealing members configured to reduce the amount of external contaminants permeating through an interface of the first and second components into the isolated processing space of the processing chamber, wherein the film is formed on the substrate by alternatingly introducing the first process material and the second process material.

摘要翻译： 等离子体增强原子层沉积（PEALD）系统包括耦合到第二室部件的第一室部件，以提供限定处理室内的隔离处理空间的处理室。 衬底保持器设置在处理室内并被配置为支撑衬底，第一处理材料供应系统被配置为将第一处理材料供应到处理室，第二处理材料供应系统被配置为将第二处理材料供应到 处理室。 电源被配置为将电磁功率耦合到处理室，以及插入在第一和第二室部件之间的密封组件。 密封组件包括多个密封构件，其被配置为将渗透通过第一和第二组件的界面的外部污染物的量减少到处理室的隔离处理空间中，其中通过交替地引入第一 工艺材料和第二工艺材料。

公开(公告)号：US20090166327A1

公开(公告)日：2009-07-02

申请号：US11968369

申请日：2008-01-02

申请人： Tadahiro Ishizaka ,  Kentaro Asakura ,  Masanao Ando ,  Toshio Hasegawa

发明人： Tadahiro Ishizaka ,  Kentaro Asakura ,  Masanao Ando ,  Toshio Hasegawa

IPC分类号： B44C1/22

CPC分类号： H01J37/20 ,  H01J37/3244 ,  H01J37/32862 ,  H01J2237/0203

摘要： Method for operating a processing system and refurbishing a ceramic substrate holder within a process chamber of the processing system are described. The method includes plasma processing one or more substrates on the ceramic substrate holder, where the processing causes erosion of a nitride material of the ceramic substrate holder. The method further includes refurbishing the ceramic substrate holder in-situ without a substrate residing on the ceramic substrate holder, where the refurbishing includes exposing the ceramic substrate holder to a plasma-excited nitrogen-containing gas in the process chamber to at least partially reverse the erosion of the nitride material.

摘要翻译： 描述了在处理系统的处理室内操作处理系统和翻新陶瓷衬底保持器的方法。 该方法包括等离子体处理陶瓷衬底保持器上的一个或多个衬底，其中处理引起陶瓷衬底保持器的氮化物材料的侵蚀。 该方法还包括原位翻新陶瓷衬底保持器，而不需要驻留在陶瓷衬底保持器上的衬底，其中翻新包括将陶瓷衬底保持器暴露于处理室中的等离子体激发的含氮气体，以至少部分地将 氮化物材料的侵蚀。

公开(公告)号：US07491430B2

公开(公告)日：2009-02-17

申请号：US11180597

申请日：2005-07-14

申请人： Tadahiro Ishizaka ,  Atsushi Gomi ,  Tatsuo Hatano

发明人： Tadahiro Ishizaka ,  Atsushi Gomi ,  Tatsuo Hatano

IPC分类号： H05H1/24

CPC分类号： C23C16/5096 ,  C23C16/36 ,  C23C16/45525 ,  C23C16/45542 ,  H01J37/32082 ,  H01L21/28562 ,  H01L21/76843

摘要： A deposition method for forming a thin film on a processed substrate by supplying a first gas including a metal, nitrogen, and carbon and a second gas reducing the first gas into a process vessel where a substrate holding table for holding the processed substrate is provided inside thereof, the deposition method includes a first step supplying the first process gas into the process vessel, and a second step supplying the second process gas so that the second process gas is plasma-excited by a plasma-exciting part provided in the process vessel. A content of at least one of the metal, nitrogen, and carbon in the thin film is controlled by changing a radio frequency power applied to the plasma-exciting part.

摘要翻译： 一种沉积方法，用于通过提供包括金属，氮和碳的第一气体和将第一气体还原到处理容器中来形成薄膜，所述处理容器内设有用于保持处理过的基板的基板保持台， 沉积方法包括将第一工艺气体供应到处理容器中的第一步骤，以及提供第二工艺气体的第二步骤，使得第二工艺气体被设置在处理容器中的等离子体激发部分等离子体激发。 通过改变施加到等离子体激发部分的射频功率来控制薄膜中的金属，氮和碳中的至少一个的含量。

公开(公告)号：US20070134907A1

公开(公告)日：2007-06-14

申请号：US11673628

申请日：2007-02-12

申请人： Taro Ikeda ,  Tadahiro Ishizaka ,  Masamichi Hara

发明人： Taro Ikeda ,  Tadahiro Ishizaka ,  Masamichi Hara

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76807 ,  H01L21/76814

摘要： A method of fabricating a semiconductor device includes the steps of forming a via-hole in an interlayer insulation film such that a metal interconnection pattern formed underneath the interlayer insulation film is exposed at a bottom of the via-hole, forming a conductive barrier film on the interlayer insulation film so as to cover a sidewall surface of the via-hole and the exposed metal interconnection pattern in conformity with a shape of the via-hole and forming a metal film on the conductive barrier film, wherein there is provided a preprocessing step, after the step of forming the via-hole but before the step of forming the conductive barrier film, of processing the interlayer insulation film including the sidewall surface of the via-hole and a bottom surface of the via-hole, with plasma containing hydrogen having energy not causing sputtering of the metal interconnection pattern.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在层间绝缘膜中形成通孔，使得形成在层间绝缘膜下方的金属互连图案在通孔的底部露出，形成导电阻挡膜 层间绝缘膜，以覆盖通孔的侧壁表面和暴露的金属互连图案，与通孔的形状一致并在导电阻挡膜上形成金属膜，其中提供了预处理步骤 在形成导电阻挡膜的步骤之后，在形成导电阻挡膜的步骤之后，对包括通孔的侧壁表面和通孔的底面的层间绝缘膜进行处理，其中包含氢的等离子体 具有不会引起金属互连图案的溅射的能量。