公开(公告)号：US4853204A

公开(公告)日：1989-08-01

申请号：US133627

申请日：1987-12-16

申请人： Nobuyuki Azuma ,  Minoru Maeda ,  Kazuo Nakamura

发明人： Nobuyuki Azuma ,  Minoru Maeda ,  Kazuo Nakamura

IPC分类号： C04B35/584 ,  C04B41/53 ,  C04B41/91

CPC分类号： C04B41/009 ,  C04B35/584 ,  C04B41/5353 ,  C04B41/91

摘要： An oxidation-resistant silicon nitride material possessing a surface layer of a phase of closely packed crystals is produced by a procedure which comprises covering the surface of a silicon nitride substrate with a layer of an alkali metal compound, firing the coated substrate at a temperature of between 800.degree. C. and 1,300.degree. C., thereby forming an alkali metal-containing vitreous coating layer on the surface of the silicon nitride substrate, and thereafter removing the coating layer.

摘要翻译： 具有紧密堆积的晶体相表面层的抗氧化氮化硅材料是通过以下步骤制备的，该方法包括用一层碱金属化合物覆盖氮化硅衬底的表面，将涂覆的衬底在 在800℃至1300℃之间，从而在氮化硅衬底的表面上形成含碱金属的玻璃质涂层，然后除去涂层。

公开(公告)号：US4694116A

公开(公告)日：1987-09-15

申请号：US842210

申请日：1986-03-21

申请人： Yutaka Hayashi ,  Toshio Mishuku ,  Mitsuyuki Yamanaka ,  Hideyo Iida

发明人： Yutaka Hayashi ,  Toshio Mishuku ,  Mitsuyuki Yamanaka ,  Hideyo Iida

IPC分类号： H01L31/04 ,  H01L31/052 ,  H01L31/18 ,  H01L31/06

CPC分类号： H01L31/1884 ,  H01L31/056 ,  Y02E10/52

摘要： A thin-film solar cell has a two-layered transparent electrode formed on a transparent substrate, a photoelectric conversion section formed on the transparent electrode, and a back electrode formed on the photoelectric conversion section. The first layer of the transparent electrode is formed on the transparent substrate and is constituted of crystal grains having a large average diameter, while the second layer thereof is formed on the first layer and is constituted of crystal grains having a small average grain diameter. The sharp pointed tips of the coarse crystal grains of the first layer are covered by the fine crystal grains of the second layer so that the side of the transparent electrode in contact with the photoelectric conversion section presents a relatively smooth surface with rounded irregularities. Each layer is separately deposited on the respective transparent substrate.

摘要翻译： 薄膜太阳能电池具有在透明基板上形成的双层透明电极，形成在透明电极上的光电转换部分和形成在光电转换部分上的背面电极。 透明电极的第一层形成在透明基板上，由平均直径大的晶粒构成，第二层形成在第一层上，由平均粒径小的晶粒构成。 第一层的粗晶粒的锐尖尖端被第二层的细晶粒覆盖，使得与光电转换部分接触的透明电极的侧面呈现具有圆形不规则性的相对平滑的表面。 各层分别沉积在相应的透明基板上。

公开(公告)号：US4687996A

公开(公告)日：1987-08-18

申请号：US699090

申请日：1985-02-07

申请人： Susumu Okazaki ,  Shunichi Higuchi ,  Osamu Nakamura ,  Sachio Takahashi

发明人： Susumu Okazaki ,  Shunichi Higuchi ,  Osamu Nakamura ,  Sachio Takahashi

IPC分类号： G01R31/36 ,  G01N27/46 ,  G08B21/00 ,  H02J7/04

CPC分类号： G01R31/36

摘要： A method and apparatus for measuring the remaining charge of a galvanic cell effects the measurement of the remaining charge by superimposing an AC voltage or current on DC voltage or current issuing from the cell to produce a higher harmonic current or voltage, determining the value corresponding to a higher harmonic component of n'th order from the higher harmonic current or voltage, and comparing the value thus measured of the cell under test with that measured previously in the same manner of a reference galvanic cell. Since the corresponding value of the higher harmonic current or voltage of n'th order varies notably with the decrease in the remaining charge of the galvanic cell, the comparison of the found corresponding value with the reference characteristic is effected with ease and the measurement can be carried out accurately and simply.

摘要翻译： 用于测量电池的剩余电荷的方法和装置通过将AC电压或电流叠加在从电池发出的DC电压或电流上产生高次谐波电流或电压来实现剩余电荷的测量，从而确定对应于 从高次谐波电流或电压起n阶的高次谐波分量，并将与测得的电池相同的值与先前参考电流电池相同的方式进行比较。 由于高次谐波电流或第n阶电压的对应值随着原电池的剩余电荷的减少而显着变化，因此可以容易地实现所找到的对应值与参考特性的比较，并且测量可以 精确而简单地进行。

公开(公告)号：US06879388B2

公开(公告)日：2005-04-12

申请号：US10866113

申请日：2004-06-14

申请人： Yuji Kasai ,  Masahiro Murakawa ,  Taro Itatani ,  Tetsuya Higuchi

发明人： Yuji Kasai ,  Masahiro Murakawa ,  Taro Itatani ,  Tetsuya Higuchi

IPC分类号： G06F15/18 ,  G02B7/00 ,  G02B23/02 ,  G02B27/62 ,  G06N3/00 ,  H01S3/06 ,  H01S3/086 ,  H01S3/139 ,  G01B11/26

CPC分类号： G02B7/005 ,  G02B27/62

摘要： An optical apparatus has an adjustment apparatus 5 and an optical unit 1 including a plurality of optical elements. The adjustment apparatus sequentially provides control signals that, according to a probabilistic search technique, change the parameters of a stipulated plurality of optical elements among the optical elements to become parameters that cause the functions of the optical apparatus to satisfy stipulated specifications. A method of adjusting the optical apparatus includes sequentially providing control signals that, according to a probabilistic search technique, change the parameters of the stipulated plurality of optical elements among the optical elements, and searching for optical values at which the functions of the optical apparatus the stipulated specification.

摘要翻译： 光学装置具有调整装置5和包括多个光学元件的光学单元1。 调整装置顺序地提供控制信号，根据概率检索技术，改变光学元件中规定的多个光学元件的参数，成为使光学装置的功能满足规定规格的参数。 调整光学装置的方法包括依次提供控制信号，根据概率检索技术，改变光学元件中规定的多个光学元件的参数，并且搜索光学装置的功能的光学值 规定的规格。

公开(公告)号：US6108094A

公开(公告)日：2000-08-22

申请号：US249138

申请日：1999-02-12

申请人： Toshiro Tani ,  Hiroshi Yokoyama ,  Martin Vacha

发明人： Toshiro Tani ,  Hiroshi Yokoyama ,  Martin Vacha

IPC分类号： G01N21/64 ,  G01J3/28 ,  G02B3/00 ,  G02B21/00 ,  G02B21/36 ,  G01N21/25

CPC分类号： G01J3/28 ,  G02B21/0004 ,  G02B3/0087 ,  G01J3/0208

摘要： An ultra-minute microscope for spectroscopy includes a rod-shaped lens having an index of refraction distribution gradient and capable of having a sample mounted on one end surface thereof, an element for projecting a laser beam into the rod-shaped lens from another end surface thereof and converging it to a focal point at an interface region between the one end surface of the rod-shaped lens and the sample, and a scanner for varying the incidence angle of the laser beam to scan the focal point two-dimensionally on the one end surface.

摘要翻译： 用于光谱学的超微量显微镜包括具有折射率分布梯度折射率的棒状透镜，并且能够将样品安装在其一个端面上，用于将激光束从另一端面投射到棒状透镜中的元件 并且将其会聚到棒状透镜的一个端面与样品之间的界面区域处的焦点，以及用于改变激光束的入射角以扫描焦点的扫描仪，二维扫描仪 端面。

公开(公告)号：US6083008A

公开(公告)日：2000-07-04

申请号：US145227

申请日：1998-09-01

申请人： Yukio Yamada ,  Yukari Tanikawa ,  Shuichi Takahashi ,  Daigo Imai

发明人： Yukio Yamada ,  Yukari Tanikawa ,  Shuichi Takahashi ,  Daigo Imai

IPC分类号： G09B23/28

CPC分类号： G09B23/286 ,  A61B2560/0233

摘要： An optical phantom of a living body includes a multiplicity of phantom layers shaped to the contours of a target part of a living body. A space portion is provided at a prescribed location inside the phantom. Inlet and outlet conduits enable liquid phantom to be supplied to the space portion and removed therefrom. This arrangement enables the space portion to be used to simulate dynamic change of physiological states, and for such changes to be measured optically.

摘要翻译： 活体的光学体模具有多​​个形状为活体的目标部位的轮廓的假想层。 空间部分设置在体模内部的规定位置。 入口和出口管道使得液体体模能够被供应到空间部分并从中移除。 这种布置使得空间部分能够用于模拟生理状态的动态变化，并且对于这种变化进行光学测量。

公开(公告)号：US6036773A

公开(公告)日：2000-03-14

申请号：US826422

申请日：1997-03-27

申请人： Xue-Lun Wang ,  Mutsuo Ogura

发明人： Xue-Lun Wang ,  Mutsuo Ogura

IPC分类号： B82B3/00 ,  C30B25/02 ,  C30B25/18 ,  H01L21/20 ,  H01L21/205 ,  C30B23/04

CPC分类号： C30B25/02 ,  B82Y10/00 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  Y10S117/913 ,  Y10S977/773 ,  Y10S977/813

摘要： A Group III atomic layer required for fabrication of a semiconductor quantum nanostructure is grown to be properly restricted to a monolayer.A substrate is configured to have a fast-growth surface portion where growth of a Ga atomic layer proceeds at a relatively high rate and a slow-growth surface portion where the growth of the Ga atomic layer proceeds at a relatively low rate. Ga atoms are supplied to the fast-growth surface portion in an amount not less than that which grows one layer of the Group III atoms. Excess Ga atoms on the fast-growth surface portion are allowed to migrate to the slow-growth surface portion by surface migration, thereby growing only one layer of the Ga atoms on the fast-growth surface portion.

摘要翻译： 生长半导体量子纳米结构所需的III族原子层被适当地限制为单层。 衬底被配置为具有以较高速率进行Ga原子层的生长的快速生长表面部分和Ga原子层的生长以较低速率进行的缓慢生长表面部分。 将Ga原子以不小于生长一层III族原子的量供给到快速生长表面部分。 允许快速生长表面部分上的过量Ga原子通过表面迁移迁移到慢生长表面部分，从而在快速生长表面部分上仅生长一层Ga原子。

公开(公告)号：US5999833A

公开(公告)日：1999-12-07

申请号：US3460

申请日：1998-01-06

申请人： Ryoji Funahashi ,  Ichiro Matsubara ,  Kazuo Ueno ,  Hiroshi Ishikawa

发明人： Ryoji Funahashi ,  Ichiro Matsubara ,  Kazuo Ueno ,  Hiroshi Ishikawa

IPC分类号： C04B35/64 ,  C01G1/00 ,  C01G29/00 ,  H01B12/06 ,  H01B13/00 ,  H01L39/24 ,  H01L39/12

CPC分类号： H01L39/248 ,  Y10S428/93 ,  Y10S505/704

摘要： A method for the production of a superconducting oxide tape having a Bi.sub.2 Sr.sub.2 Ca.sub.2 Cu.sub.3 O.sub.10 (Bi-2223) structure interposed between silver sheets, which method consists essentially of preparing a sandwich structure having interposed between silver sheets a molded layer of a superconducting oxide precursor powder consisting essentially of Bi, Pb, Sr, Ca, Cu, and O obtained from a raw material substance composed of, in atomic composition ratio, 1.00 of Bi, 0-0.2 of Pb, 0.9-1.1 of Sr, 0.9-1.1 of Ca and 1.3-1.7 of Cu, and O, heating the sandwich structure in an atmosphere consisting of oxygen and an inert gas, having an oxygen partial pressure in the range of 0-5%, and kept at a temperature in the range of 830-850.degree. C., thereby melting the molded layer, then causing the atmosphere to retain the heating temperature and meanwhile increasing the oxygen partial pressure, thereby inducing precipitation of crystal grains possessing a Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8 (Bi-2212) structure and excelling in orientation, and subsequently maintaining the oxygen partial pressure and temperature at the time of precipitation of the crystal grains, thereby transforming the structure into the (Bi-2223) structure while retaining the particle diameter of the crystal grains and the state of orientation, and superconducting oxide tape produced by the method.

摘要翻译： 一种用于生产具有介于银片之间的Bi2Sr2Ca2Cu3O10（Bi-2223）结构的超导氧化物带的方法，该方法主要包括制备夹层结构，该夹层结构介于银片之间，该层叠结构基本上由以下组成的超导氧化物前体粉末的模制层组成： Bi，Pb，Sr，Ca，Cu和O由原料组成比为1.00的Pb，0-0.2的Pb，0.9-1.1的Sr，0.9-1.1的Ca和1.3〜 1.7的Cu和O，在氧分压为0-5％的氧气和惰性气体的气氛中加热夹层结构，并保持在830-850℃的温度 ，从而熔化模制层，然后使气氛保持加热温度，同时增加氧分压，从而诱发具有Bi2Sr2CaCu2O8（Bi-2212）结构的晶粒沉淀，取向优良， 随后保持晶粒沉淀时的氧分压和温度，从而将结构转变为（Bi-2223）结构，同时保持晶粒的粒径和取向状态，并制成超导氧化物带 通过该方法。

公开(公告)号：US5891828A

公开(公告)日：1999-04-06

申请号：US824752

申请日：1997-03-26

申请人： Kunihiko Oka ,  Zhigang Zou ,  Toshimitsu Ito ,  Hiroshi Akoh

发明人： Kunihiko Oka ,  Zhigang Zou ,  Toshimitsu Ito ,  Hiroshi Akoh

IPC分类号： C30B13/00 ,  C30B13/02

CPC分类号： C30B29/225 ,  C30B13/00 ,  Y10S505/702 ,  Y10S505/729

摘要： PrBa.sub.2 Cu.sub.3 O.sub.Y exhibiting superconductivity is provided by a method including the steps of preparing a solvent consisting of a mixture of praseodymium oxide, at least one of barium oxide and barium carbonate, and copper oxide at a mixing ratio of between 1:3:5 and 1:8:20, disposing the solvent between a feed rod of PrBa.sub.2 Cu.sub.3 O.sub.7 formed to a high density and a seed crystal, heating the solvent to a temperature of 880.degree.-980.degree. C. in an atmosphere of an inert gas of at least one of argon and nitrogen mixed with 0.01-2% oxygen to form a floating solvent zone, moving the floating solvent zone toward the feed rod at 0.1-1.0 mm/hr under a temperature gradient at the solid-liquid interface of 25.degree.-35.degree. C./mm to precipitate single crystal on the seed crystal, and heat-treating the single crystal obtained in an atmosphere containing not less than 15% oxygen. Another aspect of the invention provides a superconducting device including the superconducting PrBa.sub.2 Cu.sub.3 O.sub.Y single crystal material in combination with at least one non-superconducting PrBa.sub.2 Cu.sub.3 O.sub.Y crystal material.

摘要翻译： 表现出超导性的PrBa2Cu3OY通过包括以下步骤的方法提供：将由氧化镨，氧化钡和碳酸钡中的至少一种和氧化铜组成的混合物以1:3:5至1:3的混合比制备的溶剂， 如图8:20所示，将溶剂置于高密度形成的PrBa2Cu3O7的进料棒和晶种之间，在氩气至少一种的惰性气体气氛中将溶剂加热到880-980℃ 氮气与0.01-2％的氧气混合以形成漂浮的溶剂区，在25〜35℃的固液界面的温度梯度下将漂浮溶剂区域以0.1-1.0mm / hr的速度向进料棒移动。 / mm以在晶种上沉淀单晶，并对在含有不少于15％氧气的气氛中获得的单晶进行热处理。 本发明的另一方面提供了一种超导装置，其包括与至少一种非超导PrBa2Cu3OY晶体材料组合的超导PrBa2Cu3OY单晶材料。

公开(公告)号：US5886778A

公开(公告)日：1999-03-23

申请号：US959523

申请日：1997-10-28

申请人： Yuji Kasai ,  Shigeki Sakai

发明人： Yuji Kasai ,  Shigeki Sakai

IPC分类号： G01J3/42 ,  G01N21/31

CPC分类号： G01N21/3103

摘要： A method of measuring a beam flux rate in a film growth apparatus which includes supplying a hollow cathode lamp with a current that alternates between two current values and does not include a zero current, introducing intensity-modulated spectral light emitted by the hollow cathode lamp into a vacuum chamber of a film growth apparatus, absorbing the light by a beam of atoms projected at a substrate surface, and detecting components synchronized with the modulation of the spectral light obtained.

摘要翻译： 一种测量薄膜生长装置中的光束通量速率的方法，该方法包括向空心阴极灯提供在两个电流值之间交替的电流，并且不包括零电流，将由中空阴极灯发出的强度调制的光谱光引入 膜生长装置的真空室，通过投射在基板表面的原子束吸收光，以及检测与所获得的光谱光的调制同步的成分。