公开(公告)号：US5021361A

公开(公告)日：1991-06-04

申请号：US449441

申请日：1989-12-11

申请人： Jun'ichi Kinoshita ,  Nobuo Suzuki ,  Motoyasu Morinaga ,  Yuzo Hirayama ,  Masaru Nakamura

发明人： Jun'ichi Kinoshita ,  Nobuo Suzuki ,  Motoyasu Morinaga ,  Yuzo Hirayama ,  Masaru Nakamura

IPC分类号： H01L21/306 ,  H01L21/8252 ,  H01L27/15 ,  H01L29/812 ,  H01L33/00 ,  H01S5/02 ,  H01S5/026 ,  H01S5/042 ,  H01S5/062 ,  H01S5/20 ,  H01S5/323

CPC分类号： H01S5/0422 ,  H01L21/30612 ,  H01L21/8252 ,  H01L27/15 ,  H01L29/812 ,  H01L33/0062 ,  H01S5/0261 ,  H01S5/20 ,  H01S5/0208 ,  H01S5/06203 ,  H01S5/32391 ,  Y10S148/053 ,  Y10S148/095 ,  Y10S148/119

摘要： In a monolithic OEIC in which an FET and a light-emitting device are integrated, the light-emitting device has a first clad layer, an active layer, and a second clad layer stacked on a substrate, the FET has a channel layer and source and drain layers with a high impurity concentration stacked on the substrate, etching mask layers on the source and drain layers, and a gate electrode formed on a channel layer between source and drain electrodes and the source and drain layers, the first clad layer of the light-emitting diode and the source and drain layers with a high impurity concentration of the FET are formed of the same semiconductor layer, and an active layer of the light-emitting device and the etching mask layers of the FET are formed of the same semiconductor layer.

摘要翻译： 在其中集成FET和发光器件的单片OEIC中，发光器件具有堆叠在衬底上的第一覆盖层，有源层和第二覆盖层，FET具有沟道层和源极 并且在衬底上层叠杂质浓度高的漏极层，蚀刻源极和漏极层上的掩模层以及形成在源极和漏极之间的沟道层上的栅电极以及源极和漏极层，第一覆盖层 发光二极管和FET的杂质浓度高的源极和漏极层由相同的半导体层形成，并且发光器件的有源层和FET的蚀刻掩模层由相同的半导体 层。

公开(公告)号：US5012486A

公开(公告)日：1991-04-30

申请号：US506413

申请日：1990-04-06

申请人： Sergey Luryi ,  Ya-Hong Xie

发明人： Sergey Luryi ,  Ya-Hong Xie

IPC分类号： H01S5/00 ,  H01S5/183 ,  H01S5/323

CPC分类号： H01S5/18394 ,  H01S5/18305 ,  H01S5/3201 ,  H01S5/32391

摘要： In a vertical semiconductor laser, the top mirror is composed of alternating layers of lattice-mismatched semiconductors. Quantum reflections and other charge transport barriers for majority carriers at the interface, and hence electrical resistance and power dissipation, are reduced by choosing the lattice-mismatched semiconductor materials in such a manner as to align their band edges for majority carriers. On the other hand, the semiconductor materials are selected to supply relatively large refractive index differences, and hence relatively large optical reflections, at their interfaces. The lattice-mismatching may also produce vertical thread dislocations through the stack, which increase the electrical conductivity.

摘要翻译： 在垂直半导体激光器中，上反射镜由晶格失配半导体的交替层组成。 通过选择晶格不匹配的半导体材料以使它们的多数载流子带的边缘对齐，从而降低界面处多数载流子的量子反射和其他电荷传输势垒，从而降低电阻和功耗。 另一方面，选择半导体材料以在它们的界面处提供相对较大的折射率差，并因此提供相对大的光学反射。 晶格不匹配也可能产生通过堆叠的垂直螺纹位错，这增加了导电性。

公开(公告)号：US4974233A

公开(公告)日：1990-11-27

申请号：US383100

申请日：1989-07-21

申请人： Nobuo Suzuki ,  Motoyasu Morinaga ,  Hideto Furuyama ,  Yuzo Hirayama ,  Hajime Okuda ,  Masaru Nakamura ,  Nawoto Motegi

发明人： Nobuo Suzuki ,  Motoyasu Morinaga ,  Hideto Furuyama ,  Yuzo Hirayama ,  Hajime Okuda ,  Masaru Nakamura ,  Nawoto Motegi

IPC分类号： H01S5/02 ,  H01S5/026 ,  H01S5/042 ,  H01S5/227 ,  H01S5/323

CPC分类号： H01S5/0422 ,  H01S5/026 ,  H01S5/227 ,  H01S5/0208 ,  H01S5/0425 ,  H01S5/2275 ,  H01S5/2277 ,  H01S5/32391

摘要： A semiconductor laser device comprises a semiconductor mesa portion formed above semiconductor substrate by a predetermined interval, an active region, formed between the mesa portion and semiconductor substrate and consisting of a semiconductor having a forbidden band width smaller than those of the mesa portion and semiconductor substrate, for contributing to light emission, a pair of buried portions formed at both sides in a widthwise direction of and in contact with the active region and consisting of a semiconductor having a forbidden band width larger than that of the active region, a total width of the buried portions and the active region being smaller than that of the mesa portion, thereby forming a gap at a side of each of the buried portions between the mesa portion and semiconductor substrate to electrically insulate the mesa portion and semiconductor substrate, and supporting portions formed integrally with the mesa portion so as to support the mesa portion with respect to the substrate in association with the active region and the buried portions.

公开(公告)号：US4944838A

公开(公告)日：1990-07-31

申请号：US389074

申请日：1989-08-03

申请人： Thomas L. Koch ,  Uziel Koren

发明人： Thomas L. Koch ,  Uziel Koren

IPC分类号： G02B6/136 ,  H01L21/306 ,  H01S5/323

CPC分类号： H01L21/30612 ,  G02B6/136 ,  H01S5/32391

摘要： Adiabatic mode control and structural reproducibility are achieved by a tapered semiconductor waveguide structure wherein semiconductor guiding layers are interleaved with stop-etch layers and each guiding layer extends further along the propagation axis of the waveguide further than the guiding layer immediately adjacent thereabove to create a staircase-like core or guiding structure. Cladding regions of appropriate semiconductor material having a lower index of refraction than the tapered core structure may be added to completely surround the tapered guiding structure. The profile of the tapered structure is realizable as any desired staircase-like shape such as linear, parabolic, exponential or the like. Additional layers of higher index of refraction semiconductor material may be included in the cladding region to permit additional beam shaping of the expanded spatial mode propagating along the tapered waveguide.Photolithographic masks defining successively larger exposed areas are aligned, deposited over the waveguide structure, and then removed following each etching step. Material selective etching techniques are employed to remove exposed (unmasked) portions of guiding layers. In sequence, the exposed, formerly underlying portions of the stop-etch layers are then removed using material selective etching. Iteration of the above process steps permits a tapered waveguide structure to be defined.

摘要翻译： 绝热模式控制和结构再现性通过锥形半导体波导结构实现，其中半导体引导层与停止蚀刻层交错，并且每个引导层沿着波导的传播轴进一步延伸，远离其上方紧邻的引导层，以产生阶梯 型芯或引导结构。 可以添加具有比锥形芯结构更低的折射率的适当的半导体材料的包层区域以完全包围锥形引导结构。 锥形结构的轮廓可实现为任何所需的阶梯状形状，例如线性，抛物线形，指数型等。 可以在包层区域中包含更高折射率的折射率半导体材料的附加层，以允许沿着锥形波导传播的扩展空间模式的附加束成形。 定义连续较大的暴露区域的光刻掩模对准，沉积在波导结构上，然后在每个蚀刻步骤之后被移除。 使用材料选择性蚀刻技术来去除引导层的暴露（未掩蔽）部分。 顺序地，然后使用材料选择性蚀刻去除停止蚀刻层的暴露的先前的下面的部分。 上述工艺步骤的迭代允许限定锥形波导结构。

公开(公告)号：US4706253A

公开(公告)日：1987-11-10

申请号：US734131

申请日：1985-05-15

申请人： Chin B. Su ,  Vincent A. Lanzisera ,  Richard I. Freeman

发明人： Chin B. Su ,  Vincent A. Lanzisera ,  Richard I. Freeman

IPC分类号： H01S5/062 ,  H01S5/30 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/06213 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/32391

摘要： A new method for increasing the modulation bandwidth of InGaAsP lasers is described herein. The method of the present invention is based on the gain enhancement doping of the lasers active layer. Lasers with highly doped active regions were demonstrated to have larger modulation bandwidths than lightly doped devices.

摘要翻译： 本文描述了增加InGaAsP激光器的调制带宽的新方法。 本发明的方法是基于激光器有源层的增益增益掺杂。 具有高掺杂有源区的激光器被证明具有比轻掺杂器件更大的调制带宽。

公开(公告)号：US4340966A

公开(公告)日：1982-07-20

申请号：US122171

申请日：1980-02-19

申请人： Shigeyuki Akiba ,  Yasuharu Suematsu ,  Shigehisa Arai ,  Masanobu Kodaira ,  Yoshio Itaya ,  Kenichi Iga ,  Chuichi Ota ,  Takaya Yamamoto ,  Kazuo Sakai

发明人： Shigeyuki Akiba ,  Yasuharu Suematsu ,  Shigehisa Arai ,  Masanobu Kodaira ,  Yoshio Itaya ,  Kenichi Iga ,  Chuichi Ota ,  Takaya Yamamoto ,  Kazuo Sakai

IPC分类号： H01L21/208 ,  H01L33/12 ,  H01L33/14 ,  H01L33/30 ,  H01S5/00 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/3235 ,  H01S5/32391

摘要： A semiconductor laser formed on an InP substrate to have a hetero structure comprising a plurality of In.sub.1-x Ga.sub.x`As.sub.y P.sub.1-y (0.42y.ltoreq.x.ltoreq.0.5y,0.ltoreq.y.ltoreq.1) layers which are lattice-matched with InP, in which a light emitting layer included in the layers and having a forbidden band width larger than 0.6 eV but smaller than 0.9 eV at room temperature is sandwiched between two InP layers on the InP substrate, and in which there is provided between the light emitting layer and the InP layer grown thereon at least one buffer layer having a forbidden band width larger than the forbidden band width of the light emitting layer but smaller than the forbidden band width of InP. The forbidden band width of the buffer layer at room temperature may be larger than 0.8 eV but smaller than 1.0 eV.

摘要翻译： 在InP衬底上形成的具有包含多个In1-xGax'AsyP1-y（0.42y≤x≤0.5y，0≤y≤1）的异质结构的半导体激光器，它们是 与InP晶格匹配，其中包含在层中并且具有大于0.6eV但小于0.9eV的禁带宽的发光层在InP衬底上夹在两个InP层之间，其中存在 设置在发光层和在其上生长的至少一个具有比发光层的禁带宽度大的禁带宽度的缓冲层，但小于InP的禁带宽度的InP层。 缓冲层在室温下的禁带宽度可能大于0.8eV但小于1.0eV。

公开(公告)号：US11777278B2

公开(公告)日：2023-10-03

申请号：US16627422

申请日：2018-06-28

申请人： OULUN YLIOPISTO

发明人： Boris Ryvkin ,  Eugene A. Avrutin ,  Juha Kostamovaara

IPC分类号： H01S5/20 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01S5/2031 ,  H01S5/3213 ,  H01S5/32391 ,  H01S2301/166

摘要： An apparatus is configured to operate in a single fundamental transverse mode and the apparatus includes a waveguide layer between an n-doped cladding layer and a p-doped cladding layer. The waveguide layer includes a first waveguide part, and an active layer located between the first waveguide part and the p-doped cladding layer, the active layer being asymmetrically within the waveguide layer closer to the p-doped cladding layer than the n-doped cladding layer. The refractive index of the n-doped cladding layer being equal to or larger than the p-doped cladding layer. A first end of the first waveguide part is adjacent to the n-doped cladding layer. A second end of the first waveguide part is adjacent to a first end of the active layer. A desired donor density is doped in the first waveguide part for controlling the carrier density dependent internal optical loss in the first waveguide part at high injection levels.

公开(公告)号：US20230291180A1

公开(公告)日：2023-09-14

申请号：US18108177

申请日：2023-02-10

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Atsushi SUGIYAMA

IPC分类号： H01S5/34 ,  H01S5/042 ,  H01S5/323

CPC分类号： H01S5/3401 ,  H01S5/04254 ,  H01S5/32391

摘要： A quantum cascade laser element includes: a semiconductor substrate; a semiconductor laminate including an active layer having a quantum cascade structure; a first electrode formed on a surface on an opposite side of the semiconductor laminate from the semiconductor substrate; a second electrode; and an insulating film formed on at least one end surface of a first end surface and a second end surface of the semiconductor laminate. The first electrode includes a first metal layer made of a first metal, and a second metal layer made of a second metal having a higher ionization tendency than that of the first metal. The first metal layer has a first region exposed to an outside. The second metal layer has a second region located on one end surface side with respect to the first region. The insulating film reaches the second region from the one end surface.

公开(公告)号：US11689291B2

公开(公告)日：2023-06-27

申请号：US17854564

申请日：2022-06-30

申请人： CABLE TELEVISION LABORATORIES, INC.

发明人： Haipeng Zhang ,  Junwen Zhang ,  Mu Xu ,  Zhensheng Jia ,  Luis Alberto Campos

IPC分类号： H04B10/50 ,  G02F1/21 ,  G02B27/28 ,  H01S5/32 ,  H04B10/516 ,  H04B10/25 ,  H01S5/323

CPC分类号： H04B10/504 ,  G02B27/283 ,  G02B27/286 ,  G02F1/218 ,  H01S5/3224 ,  H01S5/32391 ,  H04B10/25 ,  H04B10/5161 ,  G02F1/212

摘要： An optical full-field transmitter for an optical communications network includes a primary laser source configured to provide a narrow spectral linewidth for a primary laser signal, and a first intensity modulator in communication with a first amplitude data source. The first intensity modulator is configured to output a first amplitude-modulated optical signal from the laser signal. The transmitter further includes a first phase modulator in communication with a first phase data source and the first amplitude-modulated optical signal. The first phase modulator is configured to output a first two-stage full-field optical signal. The primary laser source has a structure based on a III-V compound semiconductor.

公开(公告)号：US08625194B2

公开(公告)日：2014-01-07

申请号：US13472029

申请日：2012-05-15

申请人： Hideaki Hasegawa

发明人： Hideaki Hasegawa

IPC分类号： H01S5/10 ,  H01S5/50 ,  H01S5/323 ,  H01S5/343

CPC分类号： H01S5/1014 ,  H01S5/0425 ,  H01S5/1064 ,  H01S5/2222 ,  H01S5/227 ,  H01S5/32391 ,  H01S5/34306 ,  H01S5/50 ,  H01S5/5027 ,  Y10S977/815 ,  Y10S977/95

摘要： A semiconductor optical amplifier includes an input-side optical amplifier waveguide section that has a first active core layer. An output-side optical amplifier waveguide section connects to the input-side optical amplifier waveguide section and has a second active core layer that is wider than the first active core layer. The width of the first active core layer and relative refractive index difference between the first active core layer and adjacent clad section in the width direction of the first active core layer, and the width of the second active core layer and relative refractive index difference between the second active core layer and adjacent clad section in the width direction of the second active core layer are set such that the carrier density and optical confinement factor in the first active core layer are higher than the carrier density and optical confinement factor in the second active core layer.

摘要翻译： 半导体光放大器包括具有第一有源芯层的输入侧光放大器波导部。 输出侧光放大器波导部分连接到输入侧光放大器波导部分，并且具有比第一有源核心层更宽的第二有源核心层。 第一有源芯层的宽度和第一有源芯层与相邻的包层部分之间在第一有源芯层的宽度方向上的相对折射率差以及第二有源芯层的宽度和第二有源芯层的宽度之间的相对折射率差 第二有源芯层和第二有源芯层的宽度方向上的相邻包层部分被设定为使得第一有源芯层中的载流子密度和光限制因子高于第二有源核中的载流子密度和光限制因子 层。