公开(公告)号：US6049733A

公开(公告)日：2000-04-11

申请号：US938769

申请日：1997-09-26

申请人： J. Bradley Phipps ,  Lyn C. Moodie ,  J. Richard Gyory ,  Felix Theeuwes

发明人： J. Bradley Phipps ,  Lyn C. Moodie ,  J. Richard Gyory ,  Felix Theeuwes

IPC分类号： A61N1/30

CPC分类号： A61N1/0448 ,  A61N1/0444 ,  Y10S977/949

摘要： An electrotransport apparatus using dispersed ion exchange material (19,83) is disclosed. The ion exchange material (19,83) may be dispersed in either the donor electrode assembly (10), the counter electrode assembly (10) or both electrode assemblies. The dispersed ion exchange material (83) comprises mobile ionic species (84-2) and substantially immobile ionic species (P). The dispersed ion exchange material (83, 84-2) interacts with competitive species (86) generated during electrotransport to render those species substantially immobile (87). Electrotransport devices exhibiting reduced polarization are also disclosed.

摘要翻译： 公开了一种使用分散离子交换材料（19,83）的电转运装置。 离子交换材料（19,83）可以分散在供体电极组件（10），对电极组件（10）或两个电极组件中。 分散的离子交换材料（83）包括移动离子物质（84-2）和基本上不可移动的离子物质（P）。 分散的离子交换材料（83,84-2）与在电输运期间产生的竞争物种（86）相互作用以使这些物质基本上不可移动（87）。 还公开了表现出减小的极化的电子传输器件。

公开(公告)号：US5910871A

公开(公告)日：1999-06-08

申请号：US837218

申请日：1997-04-22

申请人： Yoshimi Kawanami ,  Hisashi Takano ,  Kaoru Umemura ,  Yuichi Madokoro ,  Satoshi Tomimatsu

发明人： Yoshimi Kawanami ,  Hisashi Takano ,  Kaoru Umemura ,  Yuichi Madokoro ,  Satoshi Tomimatsu

IPC分类号： G11B5/187 ,  G11B5/31 ,  G11B5/39 ,  G11B5/40 ,  G11B5/127

CPC分类号： G11B5/3967 ,  G11B5/1871 ,  G11B5/3106 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/40 ,  Y10S977/949

摘要： The track width of a magnetic head is specified by the interval between a pair of grooves in the slider surface that are formed by a projection ion beam. Specifically, the grooves are processed by projecting a mask having the pattern of the pair of grooves with a projection ion beam with reduction to a magnification of 1/10, for example. Although the peripheral strain of the pattern thus formed is large and the current distortion is not uniform when the projection ion beam batch irradiation area is limited, the increase in depth of the grooves formed at the periphery of the grooves does not affect the track narrowing process at the center portion of the projection ion beam since the strain thereof is negligibly small. As a result, a narrow track width is processed with high precision.

摘要翻译： 磁头的磁道宽度由滑块表面中由突出离子束形成的一对凹槽之间的间隔来确定。 具体地说，例如，通过将具有一对凹槽的图案的掩模用投影离子束投射到+ E，fra 1/10 + EE的放大倍数来进行处理。 虽然如此形成的图案的周边应变大，并且当投影离子束批量照射区域受限时电流变形不均匀，但是形成在凹槽周边的凹槽的深度增加不影响轨道变窄处理 由于其应变可忽略不计，所以在投影离子束的中心部分。 结果，以高精度处理窄轨道宽度。

公开(公告)号：US4839150A

公开(公告)日：1989-06-13

申请号：US50157

申请日：1987-05-15

申请人： Roy T. Coyle ,  Phillman N. Ho

发明人： Roy T. Coyle ,  Phillman N. Ho

IPC分类号： C01B31/36 ,  C30B25/00

CPC分类号： C01B31/36 ,  C30B25/005 ,  C30B29/36 ,  C01P2002/88 ,  C01P2004/10 ,  C01P2004/50 ,  C01P2004/62 ,  C01P2006/12 ,  Y10S977/775 ,  Y10S977/776 ,  Y10S977/90 ,  Y10S977/949

摘要： Silicon carbide is produced by a method which includes dipsersing silica in a residual oil, carbonizing the oil at elevated temperatures, and heating the carbonized dispersion to form silicon carbide. Preferably, the silica is an amorphous type. Preferred residual oils are produced by distilling away crude petroleum components at temperatures up to about 350.degree. C. The silicon carbide product typically contains a mixture of powder and whisker configurations, and has many particles with a dimension less than about 1 micrometer.

公开(公告)号：US11971576B2

公开(公告)日：2024-04-30

申请号：US18074641

申请日：2022-12-05

申请人： Purdue Research Foundation

发明人： Urcan Guler ,  Alexander Kildishev ,  Vladimir M. Shalaev ,  Alexei S. Lagutchev ,  Andrey N. Smolyaninov

IPC分类号： G02B6/122 ,  B82Y20/00

CPC分类号： G02B6/1226 ,  B82Y20/00 ,  Y10S977/701 ,  Y10S977/949 ,  Y10S977/95

摘要： A method for producing a single photon source includes lithographically patterning a polymer on top of a plasmonic thin film, functionalizing top surfaces of the plasmonic thin film and the polymer, removing the polymer to form patterned functionalized sites on the top surface of the plasmonic thin film surface, and depositing nanodiamond particles to the patterned functionalized sites.

公开(公告)号：US08932554B2

公开(公告)日：2015-01-13

申请号：US14015179

申请日：2013-08-30

申请人： INSERM (Institut National de la Sante et de la Recherche Medicale)

发明人： Jean-Paul Boudou ,  Patrick Curmi

IPC分类号： B01J3/06 ,  C01B31/02 ,  C01C3/00 ,  C01B31/00 ,  C09K11/02 ,  B32B5/16 ,  C01B31/06 ,  C30B33/02 ,  C30B29/04 ,  C09K11/65

CPC分类号： C01B31/065 ,  C01B32/28 ,  C09K11/65 ,  C30B29/04 ,  C30B33/02 ,  Y10S977/775 ,  Y10S977/949 ,  Y10T428/2982

摘要： Method to produce diamonds containing Nitrogen-Vacancy centers from diamonds grown by a high pressure and high temperature process and containing isolated substitutional nitrogen, comprising: —Irradiating (12) said diamonds by an electron beam such that the irradiation dose is comprised between 1017 and 1019 electrons per square centimeter; —annealing (14) the irradiated diamonds in vacuum or in a inert atmosphere at a temperature above 700° C. and for at least 1 hour; characterized in that said electron beam has an acceleration energy above 7 MeV.

摘要翻译： 通过高压和高温工艺生长并含有分离的取代氮的金刚石生产含有氮 - 空位中心的金刚石的方法，包括：通过电子束辐射（12）所述金刚石，使得辐射剂量在1017和1019之间 电子每平方厘米; 在真空中或在惰性气氛中，在高于700℃的温度下放置（14）照射的金刚石并至少持续1小时; 其特征在于，所述电子束具有高于7MeV的加速能量。

公开(公告)号：US20140367727A1

公开(公告)日：2014-12-18

申请号：US14473709

申请日：2014-08-29

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Dong-Hoon LEE ,  Geon-Wook YOO ,  Nam-Goo CHA ,  Kyung-Wook HWANG

IPC分类号： H01L33/60

CPC分类号： H01L33/60 ,  B82Y20/00 ,  H01L27/15 ,  H01L33/08 ,  H01L33/14 ,  H01L33/24 ,  H01L33/46 ,  Y10S977/762 ,  Y10S977/949 ,  Y10S977/95

摘要： A light-emitting device includes a first conductive semiconductor layer formed on a substrate, a mask layer formed on the first conductive semiconductor layer and having a plurality of holes, a plurality of vertical light-emitting structures vertically grown on the first conductive semiconductor layer through the plurality of holes, a current diffusion layer surrounding the plurality of vertical light-emitting structures on the first conductive semiconductor layer, and a dielectric reflector filling a space between the plurality of vertical light-emitting structures on the current diffusion layer.

摘要翻译： 发光装置包括形成在基板上的第一导电半导体层，形成在第一导电半导体层上并具有多个孔的掩模层，在第一导电半导体层上垂直生长的多个垂直发光结构，通过 所述多个孔，围绕所述第一导电半导体层上的所述多个垂直发光结构的电流扩散层，以及填充所述电流扩散层上的所述多个垂直发光结构之间的空间的电介质反射器。

公开(公告)号：US08866996B2

公开(公告)日：2014-10-21

申请号：US13327139

申请日：2011-12-15

申请人： Jin Hyun Cho ,  Young Jai Bai

发明人： Jin Hyun Cho ,  Young Jai Bai

IPC分类号： G02F1/133 ,  G09G3/36 ,  G02F1/1333

CPC分类号： G02F1/133382 ,  G09G3/3648 ,  G09G2320/0252 ,  G09G2320/041 ,  Y10S977/742 ,  Y10S977/949

摘要： A liquid crystal display including: a liquid crystal display panel including a thin film transistor substrate and a liquid crystal layer disposed on the thin film transistor substrate; a heat generation unit that is configured to heat the liquid crystal layer; a resistance sensing unit that senses a change in a magnitude of resistance of the heat generation unit; a heat generation unit power controller that decreases a magnitude of power applied to the heat generation unit when the magnitude of resistance of the heat generation unit is equal to or greater than a reference magnitude of resistance; and a power supply unit that supplies power of a designated magnitude to the heat generation unit power controller.

摘要翻译： 一种液晶显示器，包括：液晶显示面板，包括薄膜晶体管基板和设置在所述薄膜晶体管基板上的液晶层; 被配置为加热液晶层的发热单元; 电阻感测单元，其感测所述发热单元的电阻的大小的变化; 发热单元功率控制器，当所述发热体单元的电阻大小等于或大于基准电阻值时，降低施加到所述发热单元的功率的大小; 以及向所述发热单元功率控制器供给指定大小的功率的电源单元。

公开(公告)号：US08574536B2

公开(公告)日：2013-11-05

申请号：US12597984

申请日：2008-05-07

申请人： Jean-Paul Boudou ,  Patrick Curmi

发明人： Jean-Paul Boudou ,  Patrick Curmi

IPC分类号： C01C3/00 ,  C01B31/00 ,  B01J3/08

CPC分类号： C01B31/065 ,  C01B32/28 ,  C09K11/65 ,  C30B29/04 ,  C30B33/02 ,  Y10S977/775 ,  Y10S977/949 ,  Y10T428/2982

摘要： Method to produce diamonds containing Nitrogen-Vacancy centers from diamonds grown by a high pressure and high temperature process and containing isolated substitutional nitrogen, comprising: —Irradiating (12) said diamonds by an electron beam such that the irradiation dose is comprised between 1017 and 1019 electrons per square centimeter; —annealing (14) the irradiated diamonds in vacuum or in a inert atmosphere at a temperature above 700° C. and for at least 1 hour; characterized in that said electron beam has an acceleration energy above 7 MeV.

摘要翻译： 通过高压和高温过程生长并含有分离的取代氮的金刚石生产含有氮 - 空位中心的金刚石的方法，包括： - 通过电子束辐射（12）所述金刚石，使得照射剂量在1017和1019之间 电子每平方厘米; 在真空中或在惰性气氛中，在高于700℃的温度下放置（14）照射的金刚石并至少持续1小时; 其特征在于，所述电子束具有高于7MeV的加速能量。

公开(公告)号：US20130113011A1

公开(公告)日：2013-05-09

申请号：US13808923

申请日：2011-07-19

申请人： Partha S. Dutta

发明人： Partha S. Dutta

IPC分类号： H01L33/58 ,  H01L33/00 ,  H01L33/44

CPC分类号： H01L33/58 ,  B82Y30/00 ,  C09K11/7731 ,  H01L33/005 ,  H01L33/44 ,  H01L33/502 ,  H01L33/504 ,  H01L2933/0041 ,  Y02B20/181 ,  Y10S977/774 ,  Y10S977/949

摘要： A method of manufacturing a down-conversion substrate for use in a light system includes forming a first crystallography layer including one or more phosphor materials and, optionally, applying at least one activator to the crystallography layer, heating the crystallography layer at high temperature to promote crystal growth in the crystallography layer, and drawing out the crystallography layer and allowing the crystallography layer to cool to form the down-conversion substrate. A light system includes an excitation source for emitting short wavelength primary emissions; and a down-conversion substrate disposed in the path of at least some of the primary emissions from the excitation source to convert at least a portion of the primary emissions into longer-wavelength secondary emissions, wherein the substrate includes one or more crystallography layers, wherein each crystallography layer includes one or more phosphor materials, and optionally at least one activator. Down-converted secondary light may be produced by the system.

摘要翻译： 一种制造用于光系统的下转换衬底的方法包括：形成包括一种或多种磷光体材料的第一结晶层，以及任选地将至少一种激活剂施加到晶体层，在高温下加热晶体层以促进 在晶体层中晶体生长，并绘出结晶层并使晶体层冷却以形成下转换衬底。 光系统包括用于发射短波长一次发射的激发源; 以及下转换衬底，其布置在来自激发源的至少一些初级发射的路径中，以将至少一部分初级发射转换成更长波长的二次发射，其中衬底包括一个或多个结晶层，其中 每个结晶层包括一种或多种磷光体材料，以及任选的至少一种激活剂。 下变频二次光可以由系统产生。

公开(公告)号：US20120154706A1

公开(公告)日：2012-06-21

申请号：US13327139

申请日：2011-12-15

申请人： Jin Hyun Cho ,  Young Jai Bai

发明人： Jin Hyun Cho ,  Young Jai Bai

IPC分类号： G02F1/13357 ,  G02F1/1333 ,  G02F1/133

CPC分类号： G02F1/133382 ,  G09G3/3648 ,  G09G2320/0252 ,  G09G2320/041 ,  Y10S977/742 ,  Y10S977/949

摘要： A liquid crystal display including: a liquid crystal display panel including a thin film transistor substrate and a liquid crystal layer disposed on the thin film transistor substrate; a heat generation unit that is configured to heat the liquid crystal layer; a resistance sensing unit that senses a change in a magnitude of resistance of the heat generation unit; a heat generation unit power controller that decreases a magnitude of power applied to the heat generation unit when the magnitude of resistance of the heat generation unit is equal to or greater than a reference magnitude of resistance; and a power supply unit that supplies power of a designated magnitude to the heat generation unit power controller.

摘要翻译： 一种液晶显示器，包括：液晶显示面板，包括薄膜晶体管基板和设置在所述薄膜晶体管基板上的液晶层; 被配置为加热液晶层的发热单元; 电阻感测单元，其感测所述发热单元的电阻的大小的变化; 发热单元功率控制器，当所述发热体单元的电阻大小等于或大于基准电阻值时，降低施加到所述发热单元的功率的大小; 以及向所述发热单元功率控制器供给指定大小的功率的电源单元。