公开(公告)号：US20160260718A1

公开(公告)日：2016-09-08

申请号：US15157565

申请日：2016-05-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Kiyoshi KATO

IPC: H01L27/105 ,  H01L29/24 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L27/1052 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/79 ,  H01L27/105 ,  H01L27/108 ,  H01L27/11 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/40 ,  H01L29/24 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object of one embodiment of the present invention is to provide a semiconductor device with a novel structure in which stored data can be stored even when power is not supplied in a data storing time and there is no limitation on the number of times of writing. The semiconductor device includes a first transistor which includes a first channel formation region using a semiconductor material other than an oxide semiconductor, a second transistor which includes a second channel formation region using an oxide semiconductor material, and a capacitor. One of a second source electrode and a second drain electrode of the second transistor is electrically connected to one electrode of the capacitor.

公开(公告)号：US20160218119A1

公开(公告)日：2016-07-28

申请号：US15088191

申请日：2016-04-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  G02F1/1368 ,  G02F1/1345 ,  H01L29/786 ,  H01L27/32

CPC classification number: H01L27/1225 ,  G02F1/1345 ,  G02F1/1368 ,  G09G3/20 ,  G09G2310/0275 ,  H01L27/124 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/7869

Abstract: A display device includes a driver circuit including a logic circuit including a first transistor which is a depletion type transistor and a second transistor which is an enhancement type transistor; a signal line which is electrically connected to the driver circuit; a pixel portion including a pixel whose display state is controlled by input of a signal including image data from the driver circuit through the signal line; a reference voltage line to which reference voltage is applied; and a third transistor which is a depletion type transistor and controls electrical connection between the signal line and the reference voltage line. The first to the third transistors each include an oxide semiconductor layer including a channel formation region.

Abstract translation: 显示装置包括驱动电路，该驱动电路包括逻辑电路，该逻辑电路包括作为耗尽型晶体管的第一晶体管和作为增强型晶体管的第二晶体管; 电连接到驱动电路的信号线; 包括像素的像素，所述像素的显示状态通过输入来自所述驱动电路的通过所述信号线的图像数据的信号进行控制; 施加参考电压的参考电压线; 以及第三晶体管，其是耗尽型晶体管，并控制信号线与参考电压线之间的电连接。 第一至第三晶体管各自包括包括沟道形成区的氧化物半导体层。

公开(公告)号：US20160005876A1

公开(公告)日：2016-01-07

申请号：US14849928

申请日：2015-09-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Jun KOYAMA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696

Abstract: A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

Abstract translation: 提供一种包括具有氧化物半导体层和优异的电特性的薄膜晶体管的半导体器件。 此外，提供了一种用于制造半导体器件的方法，其中在一个衬底上形成了多种不同结构的薄膜晶体管，以形成多种电路，并且其中步骤数目没有大大增加。 在绝缘表面上形成金属薄膜之后，在其上形成氧化物半导体层。 然后，进行氧化处理如热处理以部分或全部氧化金属薄膜。 此外，在诸如逻辑电路和矩阵电路之类的重点放在诸如操作速度的电路之间，薄膜晶体管的结构是不同的。

公开(公告)号：US20150364606A1

公开(公告)日：2015-12-17

申请号：US14828669

申请日：2015-08-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Kiyoshi KATO

IPC: H01L29/786 ,  H01L29/24 ,  H01L27/12 ,  H01L23/528 ,  H01L29/78

CPC classification number: G11C7/10 ,  G11C5/06 ,  G11C5/147 ,  G11C7/12 ,  G11C7/18 ,  G11C7/22 ,  G11C8/08 ,  G11C11/24 ,  G11C11/4097 ,  G11C16/0433 ,  G11C16/28 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L23/528 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/78 ,  H01L29/78603 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An object of the present invention is to provide a semiconductor device combining transistors integrating on a same substrate transistors including an oxide semiconductor in their channel formation region and transistors including non-oxide semiconductor in their channel formation region. An application of the present invention is to realize substantially non-volatile semiconductor memories which do not require specific erasing operation and do not suffer from damages due to repeated writing operation. Furthermore, the semiconductor device is well adapted to store multivalued data. Manufacturing methods, application circuits and driving/reading methods are explained in details in the description.

Abstract translation: 本发明的目的是提供一种半导体器件，其组合晶体管，其集成在其沟道形成区域中包括氧化物半导体的相同衬底晶体管和在其沟道形成区域中包括非氧化物半导体的晶体管。 本发明的应用是实现基本上不需要特定擦除操作的非易失性半导体存储器，并且不会因重复的写入操作而遭受损坏。 此外，半导体器件很适合于存储多值数据。 在说明书中详细说明制造方法，应用电路和驱动/读取方法。

公开(公告)号：US20150270295A1

公开(公告)日：2015-09-24

申请号：US14730436

申请日：2015-06-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Kiyoshi KATO

IPC: H01L27/12 ,  H01L27/115 ,  H01L27/11 ,  H01L27/108 ,  H01L29/786 ,  H01L29/24

CPC classification number: H01L27/1255 ,  G11C16/0433 ,  G11C16/26 ,  H01L21/84 ,  H01L27/108 ,  H01L27/10805 ,  H01L27/10873 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/11517 ,  H01L27/11521 ,  H01L27/1156 ,  H01L27/11803 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/7869

Abstract: An object of the present invention is to provide a semiconductor device having a novel structure in which in a data storing time, stored data can be stored even when power is not supplied, and there is no limitation on the number of writing. A semiconductor device includes a first transistor including a first source electrode and a first drain electrode; a first channel formation region for which an oxide semiconductor material is used and to which the first source electrode and the first drain electrode are electrically connected; a first gate insulating layer over the first channel formation region; and a first gate electrode over the first gate insulating layer. One of the first source electrode and the first drain electrode of the first transistor and one electrode of a capacitor are electrically connected to each other.

Abstract translation: 本发明的目的是提供一种具有新颖结构的半导体器件，其中在数据存储时间中，即使在不提供电力的情况下也可以存储所存储的数据，并且对写入次数没有限制。 半导体器件包括：第一晶体管，包括第一源极和第一漏极; 使用氧化物半导体材料并且第一源电极和第一漏电极电连接的第一沟道形成区域; 在所述第一通道形成区域上的第一栅极绝缘层; 以及在所述第一栅极绝缘层上方的第一栅电极。 第一晶体管的第一源电极和第一漏电极之一和电容器的一个电极彼此电连接。

公开(公告)号：US20150179112A1

公开(公告)日：2015-06-25

申请号：US14643160

申请日：2015-03-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE ,  Kouhei TOYOTAKA

IPC: G09G3/34 ,  G09G3/36

CPC classification number: G09G3/3406 ,  G09G3/2025 ,  G09G3/3413 ,  G09G3/3607 ,  G09G3/3659 ,  G09G2300/0456 ,  G09G2330/021

Abstract: A liquid crystal display device comprising a backlight and a pixel portion including first to 2n-th scan lines, wherein, in a first case of expressing a color image, first pixels controlled by the first to n-th scan lines are configured to express a first image using at least one of first to third hues supplied in a first rotating order, and second pixels controlled by the (n+1)-th to 2n-th scan lines are configured to express a second image using at least one of the first to third hues supplied in a second rotating order, wherein, in a second case of expressing a monochrome image, the first and second pixels controlled by the first to 2n-th scan lines are configured to express the monochrome image by external light reflected by the reflective pixel electrode, and wherein the first rotating order is different from the second rotating order.

Abstract translation: 一种液晶显示装置，包括背光源和包括第一至第2n扫描线的像素部分，其中，在表示彩色图像的第一种情况下，由第一至第n扫描线控制的第一像素被配置为表示 使用以第一旋转顺序提供的第一至第三色调中的至少一个色调的第一图像，以及由第（n + 1）至第2n扫描线控制的第二像素，被配置为使用至少一个 第一至第三色调以第二旋转顺序提供，其中，在表示单色图像的第二种情况下，由第一至第2n扫描线控制的第一和第二像素被配置为通过由 所述反射像素电极，并且其中所述第一旋转顺序与所述第二旋转顺序不同。

公开(公告)号：US20150162451A1

公开(公告)日：2015-06-11

申请号：US14623086

申请日：2015-02-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Satoru SAITO ,  Terumasa IKEYAMA

IPC: H01L29/786 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L29/41733

Abstract: An object of one embodiment of the present invention is to provide a highly reliable semiconductor device by giving stable electric characteristics to a transistor including an oxide semiconductor film. The semiconductor device includes a gate electrode layer over a substrate, a gate insulating film over the gate electrode layer, an oxide semiconductor film over the gate insulating film, a drain electrode layer provided over the oxide semiconductor film to overlap with the gate electrode layer, and a source electrode layer provided to cover an outer edge portion of the oxide semiconductor film. The outer edge portion of the drain electrode layer is positioned on the inner side than the outer edge portion of the gate electrode layer.

Abstract translation: 本发明的一个实施例的目的是通过给包括氧化物半导体膜的晶体管提供稳定的电特性来提供高度可靠的半导体器件。 半导体器件包括：衬底上的栅极电极层，栅极电极层上的栅极绝缘膜，栅极绝缘膜上的氧化物半导体膜;设置在氧化物半导体膜上方的与电极层重叠的漏电极层， 以及源电极层，设置为覆盖氧化物半导体膜的外边缘部分。 漏电极层的外缘部位于比栅电极层的外缘部更内侧。

公开(公告)号：US20150064841A1

公开(公告)日：2015-03-05

申请号：US14535408

申请日：2014-11-07

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Jun KOYAMA

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L27/1259 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/78684 ,  H01L29/7869

Abstract: The number of manufacturing steps is reduced to provide a semiconductor device with high productivity and low cost. A semiconductor device with low power consumption and high reliability is provided. A photolithography process for forming an island-shaped semiconductor layer is omitted, and a semiconductor device is manufactured through at least four photolithography processes: a step for forming a gate electrode (including a wiring or the like formed from the same layer), a step for forming a source electrode and a drain electrode (including a wiring or the like formed from the same layer), a step for forming a contact hole, and a step for forming a pixel electrode. In the step for forming the contact hole, a groove portion is formed, whereby formation of a parasitic transistor is prevented. The groove portion overlaps with the wiring with an insulating layer provided therebetween.

Abstract translation: 减少制造步骤的数量以提供具有高生产率和低成本的半导体器件。 提供具有低功耗和高可靠性的半导体器件。 省略了用于形成岛状半导体层的光刻工艺，并且通过至少四个光刻工艺制造半导体器件：用于形成栅电极（包括由同一层形成的布线等）的步骤，步骤 用于形成源电极和漏电极（包括由同一层形成的布线等），用于形成接触孔的步骤和用于形成像素电极的步骤。 在形成接触孔的步骤中，形成槽部，由此防止寄生晶体管的形成。 凹槽部分与布线重叠，其间设置有绝缘层。

公开(公告)号：US20140368486A1

公开(公告)日：2014-12-18

申请号：US14477221

申请日：2014-09-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuki HATA ,  Jun KOYAMA ,  Shuhei NAGATSUKA ,  Akihiro KIMURA

IPC: G09G3/20

CPC classification number: G09G3/2096 ,  G06F3/14 ,  G06F3/147 ,  G09G3/2092 ,  G09G2330/02 ,  G09G2370/16 ,  G09G2380/04 ,  G09G2380/06 ,  H04N5/66

Abstract: An object of the present invention is to provide a display device which does not need an input/output terminal such as an FPC or a cable for connecting to the display device and inputting an image signal to the display device directly, and can provide a setting, a display image, and the like which an operator desires. A display device of the present invention includes a display portion, a console portion to operate or input from the exterior, an antenna portion to transmit and receive a radio signal, a controller portion to control a signal input into the console portion and a signal for being transmitted or received in the antenna portion, and a battery portion to convert the radio signal received in the antenna portion into electric power and retain the electric power for driving the display portion.

Abstract translation: 本发明的目的是提供一种显示装置，其不需要诸如FPC或电缆的输入/输出端子来连接到显示装置并且直接将图像信号输入到显示装置，并且可以提供设置 ，显示图像等。 本发明的显示装置包括显示部分，从外部操作或输入的控制台部分，用于发送和接收无线电信号的天线部分，控制部分，用于控制输入到控制台部分的信号，以及用于 在天线部分中被发送或接收，以及电池部分，用于将在天线部分中接收的无线电信号转换为电力并保持用于驱动显示部分的电力。

公开(公告)号：US20140354524A1

公开(公告)日：2014-12-04

申请号：US14461993

申请日：2014-08-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA ,  Hiroyuki MIYAKE ,  Shunpei YAMAZAKI

IPC: G09G3/36

CPC classification number: G09G5/18 ,  G02F1/13624 ,  G02F1/136286 ,  G06F3/0412 ,  G06F3/044 ,  G06F3/045 ,  G09G3/006 ,  G09G3/3413 ,  G09G3/3426 ,  G09G3/3648 ,  G09G3/3674 ,  G09G3/3696 ,  G09G2300/0408 ,  G09G2300/0426 ,  G09G2300/08 ,  G09G2310/0235 ,  G09G2310/0286

Abstract: To increase the frequency of input of image signals in terms of design in a field-sequential liquid crystal display device. Image signals are concurrently supplied to pixels provided in a plurality of rows among pixels arranged in matrix in a pixel portion of the liquid crystal display device. Thus, the frequency of input of an image signal to each pixel can be increased without change in response speed of a transistor or the like included in the liquid crystal display device.

Abstract translation: 在现场顺序液晶显示装置的设计方面增加图像信号的输入频率。 图像信号同时提供给在液晶显示装置的像素部分中排列成矩阵的像素中的多行中提供的像素。 因此，可以在不改变包括在液晶显示装置中的晶体管等的响应速度的情况下增加对每个像素的图像信号的输入频率。