公开(公告)号：US20120270339A1

公开(公告)日：2012-10-25

申请号：US13093351

申请日：2011-04-25

Applicant: Bo Xie ,  Alexandros T. Demos ,  Kang Sub Yim ,  Thomas Nowak ,  Kelvin Chan

Inventor： Bo Xie ,  Alexandros T. Demos ,  Kang Sub Yim ,  Thomas Nowak ,  Kelvin Chan

IPC: H01L21/30

CPC classification number: H01L21/3105 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826

Abstract: Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and silylation compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.

Abstract translation: 提供修复损坏的低k膜的方法。 在薄膜的处理期间，例如在蚀刻，灰化和平坦化期间，低k膜的损伤发生。 低k膜的处理导致水存储在膜的孔中，并进一步在低k膜结构中形成亲水性化合物。 包含紫外线（UV）辐射和甲硅烷基化合物的修复过程从孔中除去水分，并从低k膜结构中进一步除去亲水性化合物。

公开(公告)号：US08236684B2

公开(公告)日：2012-08-07

申请号：US12147986

申请日：2008-06-27

Applicant: Kelvin Chan ,  Khaled A. Elsheref ,  Alexandros T. Demos ,  Meiyee Shek ,  Lipan Li ,  Li-Qun Xia ,  Kang sub Yim

Inventor： Kelvin Chan ,  Khaled A. Elsheref ,  Alexandros T. Demos ,  Meiyee Shek ,  Lipan Li ,  Li-Qun Xia ,  Kang sub Yim

IPC: H01L21/4763

CPC classification number: H01L21/3141 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31105 ,  H01L21/31116 ,  H01L21/31608 ,  H01L21/76814 ,  H01L21/76831

Abstract: A method and apparatus for treating a substrate is provided. A porous dielectric layer is formed on the substrate. In some embodiments, the dielectric may be capped by a dense dielectric layer. The dielectric layers are patterned, and a dense dielectric layer deposited conformally over the substrate. The dense conformal dielectric layer seals the pores of the porous dielectric layer against contact with species that may infiltrate the pores. The portion of the dense conformal pore-sealing dielectric layer covering the field region and bottom portions of the pattern openings is removed by directional selective etch.

Abstract translation: 提供了一种处理基板的方法和装置。 在基板上形成多孔介电层。 在一些实施例中，电介质可以由致密的电介质层封盖。 对电介质层进行图案化，并且将致密的电介质层保形地沉积在衬底上。 密实的保形介电层密封多孔介电层的孔隙，防止与可能渗入孔隙的物质接触。 通过定向选择性蚀刻去除覆盖图案开口的场区域和底部部分的致密保形孔隙电介质层的部分。

公开(公告)号：US20120090691A1

公开(公告)日：2012-04-19

申请号：US13248656

申请日：2011-09-29

Applicant: Sanjeev Baluja ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos ,  Thomas Nowak ,  Jianhua Zhou

Inventor： Sanjeev Baluja ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos ,  Thomas Nowak ,  Jianhua Zhou

IPC: F17D1/16 ,  B08B5/00 ,  C23C16/48

CPC classification number: C23C16/56 ,  C23C16/4405 ,  C23C16/45565 ,  C23C16/482 ,  H01L21/6719 ,  H01L21/67742 ,  Y10T137/0391

Abstract: Embodiments of the invention generally provide apparatuses and methods for controlling the gas flow profile within a processing chamber. In one embodiment, a processing tool includes an ultraviolet processing chamber defining a processing region, a substrate support, a window disposed between a UV radiation source and the substrate support, and a transparent showerhead disposed within the processing region between the window and the substrate support and having one or more transparent showerhead passages between upper and lower processing regions. The processing tool also includes a gas distribution ring having one or more gas distribution ring passages between a gas distribution ring inner channel and the upper processing region and a gas outlet ring positioned below the gas distribution ring, the gas outlet ring having one or more gas outlet passages between a gas outlet ring inner channel within the gas outlet ring and the lower processing region.

Abstract translation: 本发明的实施例通常提供用于控制处理室内的气流分布的装置和方法。 在一个实施例中，处理工具包括限定处理区域的紫外线处理室，衬底支撑件，设置在UV辐射源和衬底支撑件之间的窗口，以及布置在窗口和衬底支撑件之间的处理区域内的透明花洒 并且在上下处理区域之间具有一个或多个透明花洒通道。 处理工具还包括气体分配环，气体分配环具有在气体分配环内部通道和上部加工区域之间的一个或多个气体分配环通道和位于气体分配环下方的气体出口环，气体出口环具有一个或多个气体 气体出口环内的气体出口环内部通道和下部加工区域之间的出口通道。

公开(公告)号：US20110204492A1

公开(公告)日：2011-08-25

申请号：US12660294

申请日：2010-02-23

Applicant: Bo Xie ,  Alexandros T. Demos ,  Daemian Raj ,  Sure Ngo ,  Kang Sub Yim

Inventor： Bo Xie ,  Alexandros T. Demos ,  Daemian Raj ,  Sure Ngo ,  Kang Sub Yim

IPC: H01L23/00 ,  H01L21/316

CPC classification number: H01L21/02274 ,  C23C16/30 ,  C23C16/45523 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/7682 ,  H01L21/76832 ,  H01L21/76835

Abstract: Embodiments of the present invention pertain to the formation of microelectronic structures. Low k dielectric materials need to exhibit a dielectric constant of less than about 2.6 for the next technology node of 32 nm. The present invention enables the formation of semiconductor devices which make use of such low k dielectric materials while providing an improved flexural and shear strength integrity of the microelectronic structure as a whole.

Abstract translation: 本发明的实施例涉及微电子结构的形成。 对于32nm的下一个技术节点，低k电介质材料需要表现出小于约2.6的介电常数。 本发明能够形成利用这种低k电介质材料的半导体器件，同时提供整体上微电子结构的改进的弯曲和剪切强度的完整性。

公开(公告)号：US20110104891A1

公开(公告)日：2011-05-05

申请号：US12986809

申请日：2011-01-07

Applicant: AMIR AL-BAYATI ,  Alexandros T. Demos ,  Kang Sub Yim ,  Mehul Naik ,  Zhenjiang David Cui ,  Mihaela Balseanu ,  Meiyee Maggie Le Shek ,  Li-Qun Xia

Inventor： AMIR AL-BAYATI ,  Alexandros T. Demos ,  Kang Sub Yim ,  Mehul Naik ,  Zhenjiang David Cui ,  Mihaela Balseanu ,  Meiyee Maggie Le Shek ,  Li-Qun Xia

IPC: H01L21/768

CPC classification number: H01L21/7682 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/76825 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76885

Abstract: A method and apparatus for generating air gaps in a dielectric material of an interconnect structure. One embodiment provides a method for forming a semiconductor structure comprising depositing a first dielectric layer on a substrate, forming trenches in the first dielectric layer, filling the trenches with a conductive material, planarizing the conductive material to expose the first dielectric layer, depositing a dielectric barrier film on the conductive material and exposed first dielectric layer, depositing a hard mask layer over the dielectric barrier film, forming a pattern in the dielectric barrier film and the hard mask layer to expose selected regions of the substrate, oxidizing at least a portion of the first dielectric layer in the selected region of the substrate, removing oxidized portion of the first dielectric layer to form reversed trenches around the conductive material, and forming air gaps in the reversed trenches while depositing a second dielectric material in the reversed trenches.

Abstract translation: 一种用于在互连结构的电介质材料中产生气隙的方法和装置。 一个实施例提供了一种用于形成半导体结构的方法，包括在衬底上沉积第一介电层，在第一介电层中形成沟槽，用导电材料填充沟槽，平坦化导电材料以暴露第一介电层， 在导电材料和暴露的第一电介质层上的阻挡膜，在介电阻挡膜上沉积硬掩模层，在介电阻挡膜和硬掩模层中形成图案，以暴露衬底的选定区域，氧化至少一部分 在衬底的选定区域中的第一介电层，去除第一电介质层的氧化部分以在导电材料周围形成反向沟槽，以及在反向沟槽中形成气隙，同时在反向沟槽中沉积第二电介质材料。

公开(公告)号：US20100015816A1

公开(公告)日：2010-01-21

申请号：US12173659

申请日：2008-07-15

Applicant: Kelvin Chan ,  Kang Sub Yim ,  Alexandros T. Demos

Inventor： Kelvin Chan ,  Kang Sub Yim ,  Alexandros T. Demos

IPC: H01L21/31

CPC classification number: H01L21/31633 ,  C23C16/30 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02274

Abstract: A method for processing a substrate is provided, wherein a first organosilicon precursor, a second organosilicon precursor, a porogen, and an oxygen source are provided to a processing chamber. The first organosilicon precursor comprises compounds having generally low carbon content. The second organosilicon precursor comprises compounds having higher carbon content. The porogen comprises hydrocarbon compounds. RF power is applied to deposit a film on the substrate, and the flow rates of the various reactant streams are adjusted to change the carbon content as portions of the film are deposited. In one embodiment, an initial portion of the deposited film has a low carbon content, and is therefore oxide-like, while successive portions have higher carbon content, becoming oxycarbide-like. Another embodiment features no oxide-like initial portion. Post-treating the film generates pores in portions of the film having higher carbon content.

Abstract translation: 提供一种处理基板的方法，其中第一有机硅前体，第二有机硅前体，致孔剂和氧源被提供到处理室。 第一有机硅前体包括具有通常低碳含量的化合物。 第二有机硅前体包括具有较高碳含量的化合物。 致孔剂包括烃化合物。 施加RF功率以在衬底上沉积膜，并且调节各种反应物流的流速以随着膜的部分沉积而改变碳含量。 在一个实施方案中，沉积膜的初始部分具有低碳含量，因此是氧化物，而连续部分具有较高的碳含量，变成碳氧化物。 另一个实施方案不具有类似氧化物的初始部分。 膜的后处理在具有较高碳含量的膜的部分中产生孔。

公开(公告)号：US20090325381A1

公开(公告)日：2009-12-31

申请号：US12147986

申请日：2008-06-27

Applicant: KELVIN CHAN ,  Khaled A. Elsheref ,  Alexandros T. Demos ,  Meiyee Shek ,  Lipan Li ,  Li-Qun Xia ,  Kang sub Yim

Inventor： KELVIN CHAN ,  Khaled A. Elsheref ,  Alexandros T. Demos ,  Meiyee Shek ,  Lipan Li ,  Li-Qun Xia ,  Kang sub Yim

IPC: H01L21/44

CPC classification number: H01L21/3141 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31105 ,  H01L21/31116 ,  H01L21/31608 ,  H01L21/76814 ,  H01L21/76831

Abstract: A method and apparatus for treating a substrate is provided. A porous dielectric layer is formed on the substrate. In some embodiments, the dielectric may be capped by a dense dielectric layer. The dielectric layers are patterned, and a dense dielectric layer deposited conformally over the substrate. The dense conformal dielectric layer seals the pores of the porous dielectric layer against contact with species that may infiltrate the pores. The portion of the dense conformal pore-sealing dielectric layer covering the field region and bottom portions of the pattern openings is removed by directional selective etch.

Abstract translation: 提供了一种处理基板的方法和装置。 在基板上形成多孔介电层。 在一些实施例中，电介质可以由致密的电介质层封盖。 对电介质层进行图案化，并且将致密的电介质层保形地沉积在衬底上。 密实的保形介电层密封多孔介电层的孔隙，防止与可能渗入孔隙的物质接触。 通过定向选择性蚀刻去除覆盖图案开口的场区域和底部部分的致密保形孔隙电介质层的部分。

公开(公告)号：US07425716B2

公开(公告)日：2008-09-16

申请号：US11414649

申请日：2006-04-27

Applicant: Alexandros T. Demos ,  Khaled A. Elsheref ,  Yuri Trachuk ,  Tom K. Cho ,  Girish A. Dixit ,  Hichem M'Saad ,  Derek Witty

Inventor： Alexandros T. Demos ,  Khaled A. Elsheref ,  Yuri Trachuk ,  Tom K. Cho ,  Girish A. Dixit ,  Hichem M'Saad ,  Derek Witty

IPC: H02H23/00

CPC classification number: H01J37/317 ,  H01J2237/0041

Abstract: Embodiments in accordance with the present invention relate to a number of techniques, which may be applied alone or in combination, to reduce charge damage of substrates exposed to electron beam radiation. In one embodiment, charge damage is reduced by establishing a robust electrical connection between the exposed substrate and ground. In another embodiment, charge damage is reduced by modifying the sequence of steps for activating and deactivating the electron beam source to reduce the accumulation of charge on the substrate. In still another embodiment, a plasma is struck in the chamber containing the e-beam treated substrate, thereby removing accumulated charge from the substrate. In a further embodiment of the present invention, the voltage of the anode of the e-beam source is reduced in magnitude to account for differences in electron conversion efficiency exhibited by different cathode materials.

Abstract translation: 根据本发明的实施例涉及可以单独或组合应用的多种技术，以减少暴露于电子束辐射的衬底的电荷损伤。 在一个实施例中，通过在暴露的基板和地之间建立牢固的电连接来减小电荷损伤。 在另一个实施例中，通过修改用于激活和去激活电子束源的步骤顺序来减少电荷损伤，以减少电荷在衬底上的累积。 在另一个实施例中，在包含电子束处理的衬底的室中撞击等离子体，从而从衬底去除积聚的电荷。 在本发明的另一个实施例中，电子束源的阳极的电压的大小被减小以考虑到由不同的阴极材料表现的电子转换效率的差异。

公开(公告)号：US07323399B2

公开(公告)日：2008-01-29

申请号：US10783748

申请日：2004-02-20

Applicant: Alexandros T. Demos ,  Khaled A. Elsheref ,  Josphine J. Chang ,  Hichem M'saad

Inventor： Alexandros T. Demos ,  Khaled A. Elsheref ,  Josphine J. Chang ,  Hichem M'saad

IPC: H01L21/20

CPC classification number: C23C16/26 ,  B05D1/60 ,  B05D3/068 ,  C23C16/401 ,  C23C16/56 ,  H01L21/31058 ,  H01L21/76807 ,  Y10S438/905

Abstract: One embodiment of the present invention is a method for cleaning an electron beam treatment apparatus that includes: (a) generating an electron beam that energizes a cleaning gas in a chamber of the electron beam treatment apparatus; (b) monitoring an electron beam current; (c) adjusting a pressure of the cleaning gas to maintain the electron beam current at a substantially constant value; and (d) stopping when a predetermined condition has been reached.

Abstract translation: 本发明的一个实施例是一种清洗电子束处理装置的方法，其包括：（a）产生电子束，该电子束激励电子束处理装置的腔室中的清洁气体; （b）监测电子束电流; （c）调节清洁气体的压力以将电子束电流保持在基本恒定的值; 和（d）当达到预定条件时停止。

公开(公告)号：US07018941B2

公开(公告)日：2006-03-28

申请号：US10830203

申请日：2004-04-21

Applicant: Zhenjiang Cui ,  Josephine J. Chang ,  Alexandros T. Demos ,  Reza Arghavani ,  Derek R. Witty ,  Helen R. Armer ,  Girish A. Dixit ,  Hichem M'Saad

Inventor： Zhenjiang Cui ,  Josephine J. Chang ,  Alexandros T. Demos ,  Reza Arghavani ,  Derek R. Witty ,  Helen R. Armer ,  Girish A. Dixit ,  Hichem M'Saad

IPC: H01L21/31 ,  H01L21/461

CPC classification number: H01L21/31633 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02351

Abstract: A method of depositing a low dielectric constant film on a substrate and post-treating the low dielectric constant film is provided. The post-treatment includes rapidly heating the low dielectric constant film to a desired high temperature and then rapidly cooling the low dielectric constant film such that the low dielectric constant film is exposed to the desired high temperature for about five seconds or less. In one aspect, the post-treatment also includes exposing the low dielectric constant film to an electron beam treatment and/or UV radiation.

Abstract translation: 提供了一种在衬底上沉积低介电常数膜并对低介电常数膜进行后处理的方法。 后处理包括将低介电常数膜快速加热到期望的高温，然后快速冷却低介电常数膜，使得低介电常数膜暴露于所需的高温约5秒或更短。 一方面，后处理还包括将低介电常数膜暴露于电子束处理和/或UV辐射。