公开(公告)号：US07919786B2

公开(公告)日：2011-04-05

申请号：US12040686

申请日：2008-02-29

申请人： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

发明人： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/08 ,  B82Y10/00 ,  H01L33/06 ,  H01L33/18 ,  Y10S977/762

摘要： A nanowire light emitting device is provided. The nanowire light emitting device includes a substrate, a first conductive layer formed on the substrate, a plurality of nanowires vertically formed on the first conductive layer, each nanowire comprising a p-doped portion and an n-doped portion, a light emitting layer between the p-doped portion and the n-doped portion, a second conductive layer formed on the nanowires, and an insulating polymer in which a light emitting material is embedded, filling a space between the nanowires. The color of light emitted from the light emitting layer varies according to the light emitting material.

摘要翻译： 提供了一种纳米线发光器件。 纳米线发光器件包括衬底，在衬底上形成的第一导电层，垂直形成在第一导电层上的多个纳米线，每个纳米线包括p掺杂部分和n掺杂部分， p掺杂部分和n掺杂部分，形成在纳米线上的第二导电层和其中嵌入发光材料的绝缘聚合物，填充纳米线之间的空间。 从发光层发出的光的颜色根据发光材料而变化。

公开(公告)号：US20100213438A1

公开(公告)日：2010-08-26

申请号：US12708664

申请日：2010-02-19

申请人： Kyung-sang CHO ,  Byoung-lyong CHOI ,  Eun-kyung LEE ,  Tae-ho KIM ,  Sang-jin LEE

发明人： Kyung-sang CHO ,  Byoung-lyong CHOI ,  Eun-kyung LEE ,  Tae-ho KIM ,  Sang-jin LEE

IPC分类号： H01L33/06

CPC分类号： H01L51/502 ,  B82Y20/00 ,  B82Y30/00 ,  H01L33/14 ,  H01L51/0003 ,  H01L51/0007 ,  H01L51/5036 ,  H01L51/5048 ,  H01L51/5096

摘要： A quantum dot light emitting device includes; a substrate, a first electrode disposed on the substrate, a second electrode disposed substantially opposite to the first electrode, a first charge transport layer disposed between the first electrode and the second electrode, a quantum dot light emitting layer disposed between the first charge transport layer and one of the first electrode and the second electrode, and at least one quantum dot including layer disposed between the quantum dot light emitting layer and the first charge transport layer, wherein the at least one quantum dot including layer has an energy band level different from an energy band level of the quantum dot light emitting layer.

摘要翻译： 量子点发光器件包括： 衬底，设置在衬底上的第一电极，与第一电极基本相对设置的第二电极，设置在第一电极和第二电极之间的第一电荷传输层，设置在第一电荷传输层之间的量子点发光层 和第一电极和第二电极中的一个以及设置在量子点发光层和第一电荷传输层之间的至少一个量子点包括层，其中所述至少一个量子点包含层具有与 量子点发光层的能带水平。

公开(公告)号：US20100144126A1

公开(公告)日：2010-06-10

申请号：US12708007

申请日：2010-02-18

申请人： Eun Kyung LEE ,  Byoung Lyong CHOI ,  Young KUK ,  Je Hyuk CHOI ,  Hun Huy JUNG

发明人： Eun Kyung LEE ,  Byoung Lyong CHOI ,  Young KUK ,  Je Hyuk CHOI ,  Hun Huy JUNG

IPC分类号： H01L21/203

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/02538 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0673 ,  H01L31/035281 ,  H01L33/08 ,  H01L33/20 ,  Y10S977/70 ,  Y10S977/762 ,  Y10S977/84

摘要： Methods for the site-selective growth of horizontal nanowires are provided. According to the methods, horizontal nanowires having a predetermined length and diameter can be grown site-selectively at desired sites in a direction parallel to a substrate to fabricate a device with high degree of integration. Further provided are nanowires grown by the methods and nanodevices comprising the nanowires.

摘要翻译： 提供了水平纳米线场地选择性生长的方法。 根据该方法，具有预定长度和直径的水平纳米线可以在平行于基板的方向上在所需位置选择性地生长，从而制造具有高集成度的装置。 还提供了通过包括纳米线的方法和纳米器件生长的纳米线。

公开(公告)号：US07696097B2

公开(公告)日：2010-04-13

申请号：US12051513

申请日：2008-03-19

申请人： Eun Kyung Lee ,  Byoung Lyong Choi ,  Young Kuk ,  Je Hyuk Choi ,  Hun Huy Jung

发明人： Eun Kyung Lee ,  Byoung Lyong Choi ,  Young Kuk ,  Je Hyuk Choi ,  Hun Huy Jung

IPC分类号： H01L29/06 ,  H01L21/311

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/02538 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0673 ,  H01L31/035281 ,  H01L33/08 ,  H01L33/20 ,  Y10S977/70 ,  Y10S977/762 ,  Y10S977/84

摘要： Methods for the site-selective growth of horizontal nanowires are provided. According to the methods, horizontal nanowires having a predetermined length and diameter can be grown site-selectively at desired sites in a direction parallel to a substrate to fabricate a device with high degree of integration. Further provided are nanowires grown by the methods and nanodevices comprising the nanowires.

摘要翻译： 提供了水平纳米线场地选择性生长的方法。 根据该方法，具有预定长度和直径的水平纳米线可以在平行于基板的方向上在所需位置选择性地生长，从而制造具有高集成度的装置。 还提供了通过包括纳米线的方法和纳米器件生长的纳米线。

公开(公告)号：US07662300B1

公开(公告)日：2010-02-16

申请号：US11444116

申请日：2006-05-31

申请人： Kyung Sang Cho ,  Byoung Lyong Choi ,  Eun Kyung Lee ,  Soon Jae Kwon ,  Jae Ho Lee

发明人： Kyung Sang Cho ,  Byoung Lyong Choi ,  Eun Kyung Lee ,  Soon Jae Kwon ,  Jae Ho Lee

IPC分类号： B31D3/00

CPC分类号： B01D67/0058 ,  B01D67/003 ,  B01D2323/24 ,  B01D2323/35 ,  B22F2998/10 ,  C22C1/08 ,  C30B11/12 ,  C30B29/60 ,  B22F9/02 ,  C22C47/025 ,  B22F3/1134

摘要： Disclosed herein is a method for preparing a porous material using nanostructures. The method comprises the steps of producing nanostructures using a porous template, dispersing the nanostructures in a source or precursor material for the porous material, aligning the nanostructures in a particular direction, and removing the nanostructures by etching. According to the method, the size, shape, orientation and regularity of pores of the porous material can be easily controlled, and the preparation of the porous material is simplified, leading to a reduction in preparation costs.Further disclosed is a porous material prepared by the method.

摘要翻译： 本文公开了使用纳米结构制备多孔材料的方法。 该方法包括以下步骤：使用多孔模板制备纳米结构，将纳米结构分散在用于多孔材料的源或前体材料中，使纳米结构沿特定方向对齐，并通过蚀刻去除纳米结构。 根据该方法，可以容易地控制多孔材料的孔的尺寸，形状，取向和规则性，并且简化多孔材料的制备，导致制备成本的降低。 还公开了通过该方法制备的多孔材料。

公开(公告)号：US20090057653A1

公开(公告)日：2009-03-05

申请号：US12051513

申请日：2008-03-19

申请人： Eun Kyung LEE ,  Byoung Lyong CHOI ,  Young KUK ,  Je Hyuk CHOI ,  Hun Huy JUNG

发明人： Eun Kyung LEE ,  Byoung Lyong CHOI ,  Young KUK ,  Je Hyuk CHOI ,  Hun Huy JUNG

IPC分类号： H01L29/06 ,  H01L21/311

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/02538 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0673 ,  H01L31/035281 ,  H01L33/08 ,  H01L33/20 ,  Y10S977/70 ,  Y10S977/762 ,  Y10S977/84

摘要： Methods for the site-selective growth of horizontal nanowires are provided. According to the methods, horizontal nanowires having a predetermined length and diameter can be grown site-selectively at desired sites in a direction parallel to a substrate to fabricate a device with high degree of integration. Further provided are nanowires grown by the methods and nanodevices comprising the nanowires.

摘要翻译： 提供了水平纳米线场地选择性生长的方法。 根据该方法，具有预定长度和直径的水平纳米线可以在平行于基板的方向上在所需位置选择性地生长，从而制造具有高集成度的装置。 还提供了通过包括纳米线的方法和纳米器件生长的纳米线。

公开(公告)号：US07435996B2

公开(公告)日：2008-10-14

申请号：US11100377

申请日：2005-04-07

申请人： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

发明人： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

IPC分类号： H01L33/00 ,  H01L51/50

CPC分类号： H01L33/24 ,  B82Y20/00 ,  H01L33/08 ,  H01L33/38 ,  H01L51/0038 ,  H01L51/502 ,  H01L51/5032 ,  H01L2251/303

摘要： A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer formed on a substrate, a plurality of nanowires vertically formed on the first conductive layer, each of the nanowires having an n-type doped portion and a p-type doped portion, a light emitting layer between the n-type doped portion and the p-type doped portion, first and second conductive organic polymers filling a space corresponding to the p-type doped portion and the n-type doped portion, respectively, and a second conductive layer formed on the nanowires. The organic polymers dope the corresponding surface of the nanowires by receiving electrons from the corresponding surface of the nanowires or by providing electrons to the surface of the nanowires.

摘要翻译： 提供一种纳米线发光器件及其制造方法。 纳米线发光器件包括形成在衬底上的第一导电层，垂直形成在第一导电层上的多个纳米线，每个纳米线具有n型掺杂部分和p型掺杂部分，发光层 在n型掺杂部分和p型掺杂部分之间，分别填充与p型掺杂部分和n型掺杂部分相对应的空间的第一和第二导电有机聚合物和形成在p型掺杂部分上的第二导电层 纳米线 有机聚合物通过从纳米线的相应表面接收电子或通过向纳米线的表面提供电子来掺杂纳米线的相应表面。

公开(公告)号：US20080150425A1

公开(公告)日：2008-06-26

申请号：US11753129

申请日：2007-05-24

申请人： Kyung Sang CHO ,  Byoung Lyong CHOI ,  Jae Ho YOU ,  Eun Kyung LEE

发明人： Kyung Sang CHO ,  Byoung Lyong CHOI ,  Jae Ho YOU ,  Eun Kyung LEE

IPC分类号： H01J1/62 ,  H01J9/02

CPC分类号： H05B33/22

摘要： Disclosed is an inorganic electroluminescent device. The inorganic electroluminescent device comprises a hole transport layer, a light-emitting layer, an inorganic electron transport layer and an electron injecting electrode sequentially formed on a hole injecting electrode wherein an insulating layer is formed between the electron injecting electrode and the inorganic electron transport layer.Further disclosed are a method for fabricating the electroluminescent device and an electronic device comprising the electroluminescent device.The inorganic electroluminescent device achieves uniform light emission from the entire light-emitting surface of the device, resulting in an improvement in the reliability and stability of the device. The inorganic electroluminescent device is suitable for use in the manufacture of electronic devices, including display devices, illuminators and backlight units.

摘要翻译： 公开了一种无机电致发光器件。 无机电致发光器件包括顺序形成在空穴注入电极上的空穴传输层，发光层，无机电子传输层和电子注入电极，其中在电子注入电极和无机电子传输层之间形成绝缘层 。 进一步公开的是制造电致发光器件的方法和包括电致发光器件的电子器件。 无机电致发光器件实现了来自器件的整个发光表面的均匀发光，从而提高了器件的可靠性和稳定性。 无机电致发光器件适用于电子设备的制造，包括显示设备，照明器和背光单元。

公开(公告)号：US20060252171A1

公开(公告)日：2006-11-09

申请号：US11350751

申请日：2006-02-10

申请人： Eun-kyung Lee ,  Byoung-lyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

发明人： Eun-kyung Lee ,  Byoung-lyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

IPC分类号： H01L21/00 ,  A61B1/04 ,  H04N7/18

CPC分类号： H01L33/34 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  G01Q80/00 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/156 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1804 ,  H01L33/0054 ,  H01L33/24 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.

公开(公告)号：US07015560B2

公开(公告)日：2006-03-21

申请号：US10779741

申请日：2004-02-18

申请人： Jun-young Kim ,  Byoung-lyong Choi ,  Eun-kyung Lee

发明人： Jun-young Kim ,  Byoung-lyong Choi ,  Eun-kyung Lee

IPC分类号： H01L31/075

CPC分类号： H01L27/1446

摘要： A light-receiving device, a method for manufacturing the same, and an optoelectronic integrated circuit including the same are provided. The light-receiving device includes a substrate; an intrinsic region formed on the substrate; a first region formed to a shallow depth in the intrinsic region; and a second region formed to a deep depth in the intrinsic region and distanced from the first region, wherein the first and second regions are doped with different conductivity types. The light-receiving device can shorten the transit time of holes with slow mobility. Therefore, no response delay occurs, and thus, a high response speed can be accomplished.

摘要翻译： 提供了一种光接收装置及其制造方法和包括该光接收装置的光电集成电路。 光接收装置包括：基板; 形成在所述基板上的本征区域; 在本征区域中形成为浅深度的第一区域; 以及第二区域，其形成为本征区域中的深度并与第一区域隔开，其中第一和第二区域掺杂有不同的导电类型。 光接收装置可以缩短移动性差的穿孔时间。 因此，没有响应延迟发生，因此可以实现高响应速度。