摘要:
A polymer comprises the polymerized product of monomers comprising a nitrogen-containing monomer comprising formula (Ia), formula (Ib), or a combination of formulas (Ia) and (Ib), and an acid-deprotectable monomer having the formula (II): wherein a is 0 or 1, each Ra is independently H, F, C1-10 alkyl, or C1-10 fluoroalkyl, L1 is a straight chain or branched C1-20 alkylene group, or a monocyclic, polycyclic, or fused polycyclic C3-20 cycloalkylene group, each Rb is independently H, C1-10 alkyl, C3-20 cycloalkyl, C3-20 heterocycloalkyl, an aliphatic C5-20 oxycarbonyl, or a C1-30 acyl group optionally including a heteroatom substituent group, where each Rb is separate or at least one Rb is attached to an adjacent Rb; LN is a nitrogen-containing monocyclic, polycyclic, or fused polycyclic C3-20 heterocycloalkylene group, and X is H, C1-10 alkyl, aliphatic C5-20 oxycarbonyl, or a C1-30 acyl group optionally including a heteroatom substituent group; and each Rc is independently C1-10 alkyl, C3-20 cycloalkyl, or C3-20 heterocycloalkyl, wherein each Rc is separate or at least one Rc is attached to an adjacent Rc.
摘要:
A compound having the formula (I): wherein a is an integer of from 1 to 10, and x is an integer of from 1 to 3, X1 comprises a fluoroalcohol, fluorinated ester, or fluorinated anhydride, Y is a single bond, C1-20 alkylene group, O, S, NR, ester, carbonate, sulfonate, sulfone, or sulfonamide, wherein R is H or C1-20 alkyl, and wherein the C1-20 alkylene group is structurally only carbon, or one or more structural carbon atoms in the C1-20 alkylene group is replaced by oxygen, carbonyl, ester, or a combination comprising at least one of the foregoing, Ar is a substituted or unsubstituted, C5 or greater monocyclic, polycyclic, or fused polycyclic cycloalkyl; or a substituted or unsubstituted, C5 or greater monocyclic, polycyclic, or fused polycyclic aryl group, wherein the cycloalkyl or aryl is a carbocycle or comprises a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing, each R1 is independently a substituted C5-40 aryl, substituted C5-40 heteroaryl, C1-40 alkyl, a C3-40 cycloalkyl, wherein when x is 1, the two groups R1 are separate or bonded to each other to form a C4-40 ring structure, and Z− is a carboxylate, sulfate, sulfonate, sulfamate, or the anion of a sulfonimide, wherein when Y is a single bond, Z− is not sulfonate.
摘要:
A polymer comprises the polymerized product of monomers comprising a nitrogen-containing monomer comprising formula (Ia), formula (Ib), or a combination of formulas (Ia) and (Ib), and an acid-deprotectable monomer having the formula (II): wherein a is 0 or 1, each Ra is independently H, F, C1-10 alkyl, or C1-10 fluoroalkyl, L1 is a straight chain or branched C1-20 alkylene group, or a monocyclic, polycyclic, or fused polycyclic C3-20 cycloalkylene group, each Rb is independently H, C1-10 alkyl, C3-20 cycloalkyl, C3-20 heterocycloalkyl, an aliphatic C5-20 oxycarbonyl, or a C1-30 acyl group optionally including a heteroatom substituent group, where each Rb is separate or at least one Rb is attached to an adjacent Rb; LN is a nitrogen-containing monocyclic, polycyclic, or fused polycyclic C3-20 heterocycloalkylene group, and X is H, C1-10 alkyl, aliphatic C5-20 oxycarbonyl, or a C1-30 acyl group optionally including a heteroatom substituent group; and each Rc is independently C1-10 alkyl, C3-20 cycloalkyl, or C3-20 heterocycloalkyl, wherein each Rc is separate or at least one Rc is attached to an adjacent Rc.
摘要:
New photoresist compositions are provided that comprise one or more materials that have base-reactive groups and are particularly useful for dry lithography. Particularly preferred photoresists of the invention can exhibit reduced defects following development of a coating layer of the resist.
摘要:
This invention relates to new photoacid generator compounds and photoresist compositions that comprise such compounds. In particular, the invention relates to photoacid generator compounds that comprise base-cleavable groups.
摘要:
New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that comprise one or more base reactive groups and (i) one or more polar groups distinct from the base reactive groups, and/or (ii) at least one of the base reactive groups is a non-perfluorinated base reactive group. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
摘要:
Overcoating layer compositions that are applied above a photoresist composition including for immersion lithography processing as well as non-immersion imaging.
摘要:
New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more block copolymers. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer dining immersion lithography processing.
摘要:
New positive photoresist compositions are provided that contain a photoactive component and blend of at least two distinct resins: i) a first resin that comprises carbocyclic aryl units with hetero substitution (particularly hydroxy or thio) and ii) a second cross-linked resin. Preferred photoresists of the invention can be imaged at short wavelengths, such as sub-200 nm, particularly 193 nm.
摘要:
New positive photoresist compositions are provided that contain a photoactive component and blend of at least two distinct resins: i) a first resin that comprises carbocyclic aryl units with hetero substitution (particularly hydroxy or thio) and ii) a second cross-linked resin. Preferred photoresists of the invention can be imaged at short wavelengths, such as sub-200 nm, particularly 193 nm.