公开(公告)号：USD673126S1

公开(公告)日：2012-12-25

申请号：US29396911

申请日：2011-07-08

Applicant: Matthew Donofrio ,  James Ibbetson

Designer： Matthew Donofrio ,  James Ibbetson

公开(公告)号：US20120298955A1

公开(公告)日：2012-11-29

申请号：US13535026

申请日：2012-06-27

Applicant: David Todd Emerson ,  James Ibbetson ,  Michael John Bergmann ,  Kathleen Marie Doverspike ,  Michael John O'Loughlin ,  Howard Dean Nordby, JR. ,  Amber Christine Abare

Inventor： David Todd Emerson ,  James Ibbetson ,  Michael John Bergmann ,  Kathleen Marie Doverspike ,  Michael John O'Loughlin ,  Howard Dean Nordby, JR. ,  Amber Christine Abare

IPC: H01L33/06

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0254 ,  H01L33/32

Abstract: A semiconductor device is provided that includes a Group III nitride based superlattice and a Group III nitride based active region comprising at least one quantum well structure on the superlattice. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1-XN and InYGa1-YN, where 0≦X

Abstract translation: 提供了一种半导体器件，其包括基于III族氮化物的超晶格和在该超晶格上包含至少一个量子阱结构的基于III族氮化物的有源区。 量子阱结构包括包含III族氮化物的阱支撑层，在阱支撑层上包含III族氮化物的量子阱层和在量子阱层上包含III族氮化物的覆盖层。 还提供了一种III族氮化物基半导体器件，其包括具有InXGa1-XN和InYGa1-YN的交替层的至少两个周期的氮化镓基超晶格，其中0＆nlE; X <1且0＆lt; nlE; Y <1且X不是 等于Y.半导体器件可以是具有III族氮化物的有源区的发光二极管。 有源区可以是多量子阱有源区。

公开(公告)号：US20120199843A1

公开(公告)日：2012-08-09

申请号：US13370696

申请日：2012-02-10

Applicant: Sten HEIKMAN ,  Zhimin Jamie YAO ,  James IBBETSON ,  Fan ZHANG

Inventor： Sten HEIKMAN ,  Zhimin Jamie YAO ,  James IBBETSON ,  Fan ZHANG

IPC: H01L33/08 ,  H01L33/32 ,  H01L33/46

CPC classification number: H01L33/60 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/73265 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: Light emitting devices and methods are disclosed that provide improved light output. The devices have an LED mounted to a substrate, board or submount characterized by improved reflectivity, which reduces the absorption of LED light. This increases the amount of light that can emit from the LED device. The LED devices also exhibit improved emission characteristics by having a reflective coating on the submount that is substantially non-yellowing. One embodiment of a light emitting device according to the present invention comprises a submount having a circuit layer. A reflective coating is included between at least some of the elements of the circuit layer. A light emitting diode mounted to the circuit layer, the reflective coating being reflective to the light emitted by the light emitting diode. In some embodiments, the reflective coating comprises a carrier with scattering particles having a different index of refraction than said carrier material.

Abstract translation: 公开了提供改进的光输出的发光器件和方法。 这些装置具有安装到基板，板或基座的LED，其特征在于改进的反射率，这降低了LED光的吸收。 这增加了可从LED器件发射的光量。 LED器件还通过在基座上具有基本不变黄的反射涂层来显示出改进的发射特性。 根据本发明的发光器件的一个实施例包括具有电路层的基座。 反射涂层包括在电路层的至少一些元件之间。 安装到电路层的发光二极管，反射涂层对由发光二极管发出的光反射。 在一些实施例中，反射涂层包括具有与所述载体材料不同的折射率的散射颗粒的载体。

公开(公告)号：US08154043B2

公开(公告)日：2012-04-10

申请号：US13080968

申请日：2011-04-06

Applicant: Peter Andrews ,  Thomas G. Coleman ,  James Ibbetson ,  Michael Leung ,  Gerald H. Negley ,  Eric Tarsa

Inventor： Peter Andrews ,  Thomas G. Coleman ,  James Ibbetson ,  Michael Leung ,  Gerald H. Negley ,  Eric Tarsa

IPC: H01L33/50 ,  H01L33/60 ,  H01L33/58

CPC classification number: H01L33/58 ,  H01L33/52 ,  H01L33/60 ,  H01L2924/181 ,  H01L2924/00012

Abstract: Packaged semiconductor light emitting device are provided including a reflector having a lower sidewall portion defining a reflective cavity. A light emitting device is positioned in the reflective cavity. A first quantity of cured encapsulant material having a first index of refraction is provided in the reflective cavity including the light emitting device. A second quantity of cured encapsulant material having a second index of refraction, different from the first index of refraction, is provided on the first quantity of cured encapsulant material. The first and second index of refraction are selected to provide a buried lens in the reflective cavity.

Abstract translation: 包装半导体发光器件包括具有限定反射腔的下侧壁部分的反射器。 发光器件位于反射腔中。 具有第一折射率的第一量固化的密封剂材料设置在包括发光器件的反射腔中。 在第一量的固化的密封剂材料上提供第二量的具有与第一折射率不同的第二折射率的固化的密封剂材料。 选择第一和第二折射率以在反射腔中提供掩埋透镜。

公开(公告)号：US08034647B2

公开(公告)日：2011-10-11

申请号：US12821069

申请日：2010-06-22

Applicant: Max Batres ,  James Ibbetson ,  Ting Li ,  Adam W. Saxler

Inventor： Max Batres ,  James Ibbetson ,  Ting Li ,  Adam W. Saxler

IPC: H01L33/44

CPC classification number: H01L33/22 ,  H01L33/0095 ,  H01L2224/13 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/10155 ,  H01L2224/0401

Abstract: The surface morphology of an LED light emitting surface is changed by applying processes, such as a reactive ion etch (RIE) process to the light emitting surface. In one embodiment, the changed surface morphology takes the form of a moth-eye surface. The surface morphology created by the RIE process may be emulated using different combinations of non-RIE processes such as grit sanding and deposition of a roughened layer of material or particles followed by dry etching.

Abstract translation: 通过将诸如反应离子蚀刻（RIE）工艺的工艺应用到发光表面来改变LED发光表面的表面形态。 在一个实施方案中，改变的表面形态采取飞蛾眼表面的形式。 可以使用RIE工艺的非RIE工艺的不同组合来模拟由RIE工艺制成的表面形态，例如砂光磨削和粗糙化的材料层或颗粒的沉积，然后进行干蚀刻。

公开(公告)号：US08017963B2

公开(公告)日：2011-09-13

申请号：US12329722

申请日：2008-12-08

Applicant: Matthew Donofrio ,  John Edmond ,  James Ibbetson ,  Ting Li

Inventor： Matthew Donofrio ,  John Edmond ,  James Ibbetson ,  Ting Li

IPC: H01L33/00

CPC classification number: H01L33/38 ,  H01L33/145 ,  H01L33/42 ,  H01L33/46

Abstract: A light emitting diode is disclosed that includes an active structure, a first ohmic contact on the active structure, and a transparent conductive oxide layer on the active structure opposite the first ohmic contact. The transparent conductive oxide layer has a larger footprint than said active structure. A dielectric mirror is positioned on the transparent conductive oxide layer opposite said active structure and a second contact is positioned on the transparent conductive oxide layer opposite the dielectric mirror and separated from the active structure.

Abstract translation: 公开了一种发光二极管，其包括有源结构，有源结构上的第一欧姆接触和与第一欧姆接触相对的有源结构上的透明导电氧化物层。 透明导电氧化物层具有比所述活性结构更大的占地面积。 电介质反射镜位于与所述有源结构相对的透明导电氧化物层上，并且第二触点位于与电介质反射镜相对的透明导电氧化物层上并与有源结构分离。

公开(公告)号：US20110180834A1

公开(公告)日：2011-07-28

申请号：US13080968

申请日：2011-04-06

Applicant: Peter Andrews ,  Thomas G. Coleman ,  James Ibbetson ,  Michael Leung ,  Gerald H. Negley ,  Eric Tarsa

Inventor： Peter Andrews ,  Thomas G. Coleman ,  James Ibbetson ,  Michael Leung ,  Gerald H. Negley ,  Eric Tarsa

IPC: H01L33/50 ,  H01L33/60 ,  H01L33/58

CPC classification number: H01L33/58 ,  H01L33/52 ,  H01L33/60 ,  H01L2924/181 ,  H01L2924/00012

Abstract: Packaged semiconductor light emitting device are provided including a reflector having a lower sidewall portion defining a reflective cavity. A light emitting device is positioned in the reflective cavity. A first quantity of cured encapsulant material having a first index of refraction is provided in the reflective cavity including the light emitting device. A second quantity of cured encapsulant material having a second index of refraction, different from the first index of refraction, is provided on the first quantity of cured encapsulant material. The first and second index of refraction are selected to provide a buried lens in the reflective cavity.

Abstract translation: 包装半导体发光器件包括具有限定反射腔的下侧壁部分的反射器。 发光器件位于反射腔中。 具有第一折射率的第一量固化的密封剂材料设置在包括发光器件的反射腔中。 在第一量的固化的密封剂材料上提供第二量的具有与第一折射率不同的第二折射率的固化的密封剂材料。 选择第一和第二折射率以在反射腔中提供掩埋透镜。

公开(公告)号：US20110127568A1

公开(公告)日：2011-06-02

申请号：US13023788

申请日：2011-02-09

Applicant: MATTHEW DONOFRIO ,  James Ibbetson ,  Zhimin Jamie Yao

Inventor： MATTHEW DONOFRIO ,  James Ibbetson ,  Zhimin Jamie Yao

IPC: H01L33/36

CPC classification number: H01L33/405 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/382 ,  H01L33/42 ,  H01L33/46 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0066 ,  H01L2924/00

Abstract: Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode and cathode contacts extend on the first face to collectively cover substantially all of the first face. A small gap may be provided between the contacts.

Abstract translation: 发光二极管包括具有第一和第二相对面的二极管区域，其中包括n型层和p型层，与p型层欧姆接触并在第一面上延伸的阳极接触，以及阴极接触 该欧姆接触n型层并且还在第一面上延伸。 阳极和阴极接触件在第一面上延伸以共同覆盖基本上所有的第一面。 可以在触点之间提供小的间隙。

公开(公告)号：US07928456B2

公开(公告)日：2011-04-19

申请号：US11849530

申请日：2007-09-04

Applicant: Peter Andrews ,  Thomas G. Coleman ,  James Ibbetson ,  Michael Leung ,  Gerald H. Negley ,  Eric Tarsa

Inventor： Peter Andrews ,  Thomas G. Coleman ,  James Ibbetson ,  Michael Leung ,  Gerald H. Negley ,  Eric Tarsa

IPC: H01L33/00

CPC classification number: H01L33/58 ,  H01L33/52 ,  H01L33/60 ,  H01L2924/181 ,  H01L2924/00012

Abstract: Packaged semiconductor light emitting device are provided including a reflector having a lower sidewall portion defining a reflective cavity. A light emitting device is positioned in the reflective cavity. A first quantity of cured encapsulant material having a first index of refraction is provided in the reflective cavity including the light emitting device. A second quantity of cured encapsulant material having a second index of refraction, different from the first index of refraction, is provided on the first quantity of cured encapsulant material. The first and second index of refraction are selected to provide a buried lens in the reflective cavity.

Abstract translation: 包装半导体发光器件包括具有限定反射腔的下侧壁部分的反射器。 发光器件位于反射腔中。 具有第一折射率的第一量固化的密封剂材料设置在包括发光器件的反射腔中。 在第一量的固化的密封剂材料上提供第二量的具有与第一折射率不同的第二折射率的固化的密封剂材料。 选择第一和第二折射率以在反射腔中提供掩埋透镜。

公开(公告)号：US20100252840A1

公开(公告)日：2010-10-07

申请号：US12814241

申请日：2010-06-11

Applicant: JAMES IBBETSON ,  Sten Heikman

Inventor： JAMES IBBETSON ,  Sten Heikman

IPC: H01L33/62

CPC classification number: H01L25/0753 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An LED chip comprising a plurality of sub-LEDs on a submount. Electrically conductive and electrically insulating features are included that serially interconnect the sub-LEDs such that an electrical signal applied to the serially interconnected sub-LEDs along the electrically conductive features spreads to the serially interconnected sub-LEDs. A via is included that is arranged to electrically couple one of the sub-LEDs to the submount. The sub-LED can be interconnected by more than one of the conductive features, with each one of the conductive features capable of spreading an electrical signal between the two of the sub-LEDs.

Abstract translation: 一种LED芯片，包括在底座上的多个子LED。 包括导电和电绝缘特征，其将子LED串联连接，使得沿着导电特征施加到串联的子LED的电信号扩展到串联的子LED。 包括通孔，其布置成将子LED中的一个电耦合到基座。 子LED可以由多于一个的导电特征相互连接，每个导电特征能够在两个子LED之间扩展电信号。