公开(公告)号：US5452110A

公开(公告)日：1995-09-19

申请号：US229879

申请日：1994-04-19

申请人： Yasuhiro Hatano ,  Hajime Takayama ,  Yasushi Fukada ,  Kazuhiko Kurita ,  Kazuo Nojiri

发明人： Yasuhiro Hatano ,  Hajime Takayama ,  Yasushi Fukada ,  Kazuhiko Kurita ,  Kazuo Nojiri

IPC分类号： H04N1/00 ,  H04N1/12 ,  H04N1/193 ,  H04N1/10 ,  H04N1/23

CPC分类号： H04N1/00525 ,  H04N1/121 ,  H04N1/00885 ,  H04N1/193

摘要： A facsimile apparatus is provided which includes a casing, a system control unit for controlling a facsimile operation, an optical system, reading facsimile data of a transmit document, arranged below the system control unit within the casing, and a document feeding path, provided above the system control unit, for feeding the transmit document to a reading station where the optical system reads the facsimile data of the transmit document. These arrangements provide a compact structure of the facsimile apparatus.

摘要翻译： 提供了一种传真装置，其包括壳体，用于控制传真操作的系统控制单元，布置在壳体内的系统控制单元下方的发送文件的读取传真数据，以及设置在文档馈送路径上的文档馈送路径 系统控制单元，用于将发送文档馈送到光学系统读取发送文档的传真数据的读取站。 这些布置提供了传真装置的紧凑结构。

公开(公告)号：US5264712A

公开(公告)日：1993-11-23

申请号：US881314

申请日：1992-05-07

申请人： Jun Murata ,  Yoshitaka Tadaki ,  Hiroko Kaneko ,  Toshihiro Sekiguchi ,  Hiroyuki Uchiyama ,  Hisashi Nakamura ,  Toshio Maeda ,  Osamu Kasahara ,  Hiromichi Enami ,  Atsushi Ogishima ,  Masaki Nagao ,  Michimasa Funabashi ,  Yasuo Kiguchi ,  Masayuki Kojima ,  Atsuyoshi Koike ,  Hiroyuki Miyazawa ,  Masato Sadaoka ,  Kazuya Kadota ,  Tadashi Chikahara ,  Kazuo Nojiri ,  Yutaka Kobayashi

发明人： Jun Murata ,  Yoshitaka Tadaki ,  Hiroko Kaneko ,  Toshihiro Sekiguchi ,  Hiroyuki Uchiyama ,  Hisashi Nakamura ,  Toshio Maeda ,  Osamu Kasahara ,  Hiromichi Enami ,  Atsushi Ogishima ,  Masaki Nagao ,  Michimasa Funabashi ,  Yasuo Kiguchi ,  Masayuki Kojima ,  Atsuyoshi Koike ,  Hiroyuki Miyazawa ,  Masato Sadaoka ,  Kazuya Kadota ,  Tadashi Chikahara ,  Kazuo Nojiri ,  Yutaka Kobayashi

IPC分类号： H01L21/8234 ,  H01L27/105 ,  H01L21/308 ,  H01L29/66

CPC分类号： H01L27/105 ,  H01L21/823425

摘要： A semiconductor integrated circuit comprising first n-channel MISFETs constituting the memory cells of a storage system, second n-channel MISFETs constituting the peripheral circuits of the storage system, and third n-channel MISFETs constituting the output circuit among the peripheral circuits. The respective threshold voltages of the first n-channel MISFETs, the second n-channel MISFETs and the third n-channel MISFETs are decreased in that order when the respective gate lengths of those MISFETs are substantially the same.

摘要翻译： 一种半导体集成电路，包括构成存储系统的存储单元的第一n沟道MISFET，构成存储系统的外围电路的第二n沟道MISFET和构成外围电路中的输出电路的第三n沟道MISFET。 当这些MISFET的各个栅极长度基本相同时，第一n沟道MISFET，第二n沟道MISFET和第三n沟道MISFET的阈值电压依次减小。

公开(公告)号：US5200017A

公开(公告)日：1993-04-06

申请号：US638378

申请日：1991-01-07

申请人： Yoshinao Kawasaki ,  Hironobu Kawahara ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Kazuo Nojiri ,  Yoshimi Torii

发明人： Yoshinao Kawasaki ,  Hironobu Kawahara ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Kazuo Nojiri ,  Yoshimi Torii

IPC分类号： C23F4/00 ,  H01J37/18 ,  H01L21/00 ,  H01L21/677

CPC分类号： H01L21/67748 ,  C23F4/00 ,  H01J37/185 ,  H01L21/67017 ,  H01L21/67161 ,  H01L21/67751

摘要： A method of processing a sample comprises etching the sample by means of an etching plasma, and then treating the sample by means of a second plasma to remove residual corrosive compounds formed by the etching plasma. Removal of the residual corrosive compounds and prevention of corrosion is much improved by contacting the surface of the sample after the second plasma treatment with at least one liquid in order to effect at least one of (a) removal of the residual corrosive compounds and (b) passivation of the surface, and drying the sample.

摘要翻译： 处理样品的方法包括通过蚀刻等离子体蚀刻样品，然后借助于第二等离子体处理样品以除去由蚀刻等离子体形成的残余腐蚀性化合物。 通过在第二等离子体处理之后将样品的表面与至少一种液体接触来去除残留的腐蚀性化合物和防止腐蚀，以便实现以下中的至少一种：（a）去除残留的腐蚀性化合物和（b ）钝化表面，并干燥样品。

公开(公告)号：US07004181B2

公开(公告)日：2006-02-28

申请号：US10229931

申请日：2002-08-27

申请人： Yoichi Isago ,  Kazuo Nojiri ,  Naoaki Kobayashi ,  Teruo Saito ,  Shu Nakajima

发明人： Yoichi Isago ,  Kazuo Nojiri ,  Naoaki Kobayashi ,  Teruo Saito ,  Shu Nakajima

IPC分类号： B08B3/02

CPC分类号： H01L21/67051 ,  B01F3/022 ,  B01F3/04049 ,  B01F5/045 ,  B01F2215/0045 ,  B01F2215/0096 ,  B05B7/0433 ,  B05B7/0475 ,  B05B7/065 ,  B05B7/066 ,  B08B3/00 ,  B08B3/02 ,  G03F7/422 ,  Y10S134/902

摘要： The invention provides a water supplying apparatus and method thereof which has a high capacity of peeling and removing a disused material such as a resist film and the like, and can efficiently use water vapor. A water supplying apparatus for executing a washing process, a cleaning process and a working process of a subject, is provided with a water vapor body supplying means for supplying a water vapor body, and a water mist body supplying means for supplying a water mist body containing liquid water fine particles, and the structure is made such that said water vapor body and said water mist body are supplied to the subject by independently controlling said two means.

摘要翻译： 本发明提供了一种具有高剥离和去除诸如抗蚀剂膜等废弃材料的能力的供水装置及其方法，并且可以有效地使用水蒸气。 一种用于执行洗涤过程，清洁过程和对象的工作过程的供水设备设置有用于供应水蒸汽体的水蒸气体供应装置和用于供应水雾体的水雾体供应装置 并且通过独立地控制所述两个装置，将所述水蒸气体和所述水雾体供给到被检体。

公开(公告)号：US20050186801A1

公开(公告)日：2005-08-25

申请号：US11104441

申请日：2005-04-13

申请人： Shouochi Uno ,  Atsushi Maekawa ,  Takashi Yunogami ,  Kazutami Tago ,  Kazuo Nojiri ,  Shuntaro Machida ,  Takafumi Tokunaga

发明人： Shouochi Uno ,  Atsushi Maekawa ,  Takashi Yunogami ,  Kazutami Tago ,  Kazuo Nojiri ,  Shuntaro Machida ,  Takafumi Tokunaga

IPC分类号： H01L21/3065 ,  H01L21/311 ,  H01L21/312 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/02126 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3122 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76829 ,  H01L21/76835

摘要： In a process for the manufacture of a semiconductor integrated circuit device having an inlaid interconnect structure by embedding a conductor film in a recess, such as a trench or hole, formed in an organic insulating film which constitutes an interlevel dielectric film and includes an organosiloxane as a main component, the recess, such as a trench or hole, is formed by subjecting the organic insulating film to plasma dry etching in a CF-based gas/N2/Ar gas in order to suppress the formation of an abnormal shape on the bottom of the recess, upon formation of a photoresist film over the organic insulating film, followed by formation of the recess therein with the photoresist film as an etching mask.

摘要翻译： 在制造具有嵌入式互连结构的半导体集成电路器件的方法中，通过将导体膜嵌入形成在构成层间电介质膜的有机绝缘膜中的凹槽（例如沟槽或孔）中，并且包括有机硅氧烷作为 通过使有机绝缘膜在基于CF的气体/ N 2 / Ar气中进行等离子体干蚀刻来形成主要部件，凹槽，例如沟槽或孔，以便抑制 在凹陷的底部形成异常形状，在有机绝缘膜上形成光致抗蚀剂膜，然后用光致抗蚀剂膜作为蚀刻掩模形成凹部。

公开(公告)号：US06656846B2

公开(公告)日：2003-12-02

申请号：US09847406

申请日：2001-05-03

申请人： Masayuki Kojima ,  Yoshimi Torii ,  Michimasa Hunabashi ,  Kazuyuki Suko ,  Takashi Yamada ,  Keizo Kuroiwa ,  Kazuo Nojiri ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Hironobu Kawahara

发明人： Masayuki Kojima ,  Yoshimi Torii ,  Michimasa Hunabashi ,  Kazuyuki Suko ,  Takashi Yamada ,  Keizo Kuroiwa ,  Kazuo Nojiri ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Hironobu Kawahara

IPC分类号： H01L213065

CPC分类号： H01L21/32136 ,  C23F4/00 ,  H01J37/185 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/67745 ,  H01L21/67751

摘要： Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

公开(公告)号：US06186153B1

公开(公告)日：2001-02-13

申请号：US09040423

申请日：1998-03-18

申请人： Hiroyuki Kitsunai ,  Nobuo Tsumaki ,  Shigeru Kakuta ,  Kazuo Nojiri ,  Kazue Takahashi

发明人： Hiroyuki Kitsunai ,  Nobuo Tsumaki ,  Shigeru Kakuta ,  Kazuo Nojiri ,  Kazue Takahashi

IPC分类号： C25F700

CPC分类号： H01L21/02046 ,  C23C16/4405 ,  H01L21/30604 ,  Y10S438/905

摘要： Providing a dry cleaning method capable of removing deposition films which adhere to the inner walls of a semiconductor manufacturing apparatus-that is, removing dust production sources therefrom. To this end, the dry cleaning process is supplemented by a step of removing either ion sputtered matter or products of the internal member materials of the apparatus or chemical compounds of such apparatus internal member materials and of an etching gas, in addition to a step of removing etching reaction products. It thus becomes possible to eliminate dust generation due to pealing off of deposition films with an increase in the number of wafers being processed, which in turn increases the manufacturing yield and working efficiency of the manufacturing apparatus.

摘要翻译： 提供能够除去附着在半导体制造装置的内壁上的沉积膜的干式清洗方法，即从其除去灰尘生成源。 为此，通过除去离子溅射物质或该装置内部构件材料的内部构件材料的产物或这种设备内部构件材料的化学化合物和蚀刻气体的步骤来补充干法，除了步骤 去除蚀刻反应产物。 因此，随着处理晶片数量的增加，可以消除由于沉积膜剥落引起的灰尘的产生，这又提高了制造装置的制造成品率和工作效率。

公开(公告)号：US5868854A

公开(公告)日：1999-02-09

申请号：US987171

申请日：1992-12-08

申请人： Masayuki Kojima ,  Yoshimi Torii ,  Michimasa Hunabashi ,  Kazuyuki Suko ,  Takashi Yamada ,  Keizo Kuroiwa ,  Kazuo Nojiri ,  Yoshinao Kawasaki ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Hironobu Kawahara

发明人： Masayuki Kojima ,  Yoshimi Torii ,  Michimasa Hunabashi ,  Kazuyuki Suko ,  Takashi Yamada ,  Keizo Kuroiwa ,  Kazuo Nojiri ,  Yoshinao Kawasaki ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Hironobu Kawahara

IPC分类号： C23F4/00 ,  H01J37/18 ,  H01L21/00 ,  H01L21/3213 ,  H01L21/461 ,  H01L21/677 ,  B08B6/00 ,  H01L21/302

CPC分类号： H01L21/32136 ,  C23F4/00 ,  H01J37/185 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/67745 ,  H01L21/67751

摘要： Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

公开(公告)号：US5646489A

公开(公告)日：1997-07-08

申请号：US432861

申请日：1995-05-02

申请人： Yutaka Kakehi ,  Yoshinao Kawasaki ,  Keizo Suzuki ,  Kazuo Nojiri ,  Hiromichi Enami ,  Tetsunori Kaji ,  Seiichi Watanabe ,  Yoshifumi Ogawa

发明人： Yutaka Kakehi ,  Yoshinao Kawasaki ,  Keizo Suzuki ,  Kazuo Nojiri ,  Hiromichi Enami ,  Tetsunori Kaji ,  Seiichi Watanabe ,  Yoshifumi Ogawa

IPC分类号： C23C16/511 ,  H01J37/32 ,  H05H1/46

CPC分类号： H01J37/32229 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/32284

摘要： A plasma processing apparatus has a waveguide along which microwaves are propagated from a microwave generator to a plasma-forming region in a low-pressure processing chamber. The waveguide has a large cross-sectional area, to enable a large region of plasma to be achieved. Uniformity and stability of the plasma are improved by a mode restrictor which inhibits mixing of propagation modes which is otherwise liable to occur in a wide waveguide. The mode restrictor consists of electrically conductive dividers which divide the waveguide cross-section into an array of sub-guides before the plasma-forming region.

摘要翻译： 等离子体处理装置具有微波从微波发生器传播到低压处理室中的等离子体形成区域的波导。 波导具有大的横截面面积，以实现等离子体的大区域。 等离子体的均匀性和稳定性通过抑制混合传播模式的模式限制器来改善，否则传播模式容易发生在宽波导中。 模式限制器由导电分配器组成，其在等离子体形成区域之前将波导横截面分成子导子阵列。

公开(公告)号：US5007981A

公开(公告)日：1991-04-16

申请号：US477474

申请日：1990-02-09

申请人： Yoshinao Kawasaki ,  Hironobu Kawahara ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Kazuo Nojiri ,  Yoshimi Torii

发明人： Yoshinao Kawasaki ,  Hironobu Kawahara ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Kazuo Nojiri ,  Yoshimi Torii

IPC分类号： H01L21/302 ,  C23F4/00 ,  H01J37/18 ,  H01L21/00 ,  H01L21/027 ,  H01L21/30 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/677

CPC分类号： H01L21/67161 ,  C23F4/00 ,  H01J37/185 ,  H01L21/32136 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67745 ,  H01L21/67748 ,  H01L21/67751

摘要： A sample is plasma etched and then treated with a second plasma to remove residual corrosive compounds formed by the etching plasma. Removal of the residual corrosive compounds and prevention of corrosion is improved by washing the surface of the sample after the second plasma treatment with at least one liquid in order to effect at least one of (a) removal of the residual corrosive compounds and (b) passivation of the surface, the step of washing is followed by drying the sample.