公开(公告)号：US07004181B2

公开(公告)日：2006-02-28

申请号：US10229931

申请日：2002-08-27

申请人： Yoichi Isago ,  Kazuo Nojiri ,  Naoaki Kobayashi ,  Teruo Saito ,  Shu Nakajima

发明人： Yoichi Isago ,  Kazuo Nojiri ,  Naoaki Kobayashi ,  Teruo Saito ,  Shu Nakajima

IPC分类号： B08B3/02

CPC分类号： H01L21/67051 ,  B01F3/022 ,  B01F3/04049 ,  B01F5/045 ,  B01F2215/0045 ,  B01F2215/0096 ,  B05B7/0433 ,  B05B7/0475 ,  B05B7/065 ,  B05B7/066 ,  B08B3/00 ,  B08B3/02 ,  G03F7/422 ,  Y10S134/902

摘要： The invention provides a water supplying apparatus and method thereof which has a high capacity of peeling and removing a disused material such as a resist film and the like, and can efficiently use water vapor. A water supplying apparatus for executing a washing process, a cleaning process and a working process of a subject, is provided with a water vapor body supplying means for supplying a water vapor body, and a water mist body supplying means for supplying a water mist body containing liquid water fine particles, and the structure is made such that said water vapor body and said water mist body are supplied to the subject by independently controlling said two means.

摘要翻译： 本发明提供了一种具有高剥离和去除诸如抗蚀剂膜等废弃材料的能力的供水装置及其方法，并且可以有效地使用水蒸气。 一种用于执行洗涤过程，清洁过程和对象的工作过程的供水设备设置有用于供应水蒸汽体的水蒸气体供应装置和用于供应水雾体的水雾体供应装置 并且通过独立地控制所述两个装置，将所述水蒸气体和所述水雾体供给到被检体。

公开(公告)号：US07288156B2

公开(公告)日：2007-10-30

申请号：US11330004

申请日：2006-01-10

申请人： Yoichi Isago ,  Kazuo Nojiri ,  Naoaki Kobayashi ,  Teruo Saito ,  Shu Nakajima

发明人： Yoichi Isago ,  Kazuo Nojiri ,  Naoaki Kobayashi ,  Teruo Saito ,  Shu Nakajima

IPC分类号： B08B3/00 ,  B08B3/02 ,  B08B5/00

CPC分类号： H01L21/67051 ,  B01F3/022 ,  B01F3/04049 ,  B01F5/045 ,  B01F2215/0045 ,  B01F2215/0096 ,  B05B7/0433 ,  B05B7/0475 ,  B05B7/065 ,  B05B7/066 ,  B08B3/00 ,  B08B3/02 ,  G03F7/422 ,  Y10S134/902

摘要： The invention provides a water supplying apparatus and method thereof which has a high capacity of peeling and removing a disused material such as a resist film and the like, and can efficiently use water vapor. A water supplying apparatus for executing a washing process, a cleaning process and a working process of a subject, is provided with a water vapor body supplying means for supplying a water vapor body, and a water mist body supplying means for supplying a water mist body containing liquid water fine particles, and the structure is made such that said water vapor body and said water mist body are supplied to the subject by independently controlling said two means.

摘要翻译： 本发明提供了一种具有高剥离和去除诸如抗蚀剂膜等废弃材料的能力的供水装置及其方法，并且可以有效地使用水蒸气。 一种用于执行洗涤过程，清洁过程和对象的工作过程的供水设备设置有用于供应水蒸汽体的水蒸气体供应装置和用于供应水雾体的水雾体供应装置 并且通过独立地控制所述两个装置，将所述水蒸气体和所述水雾体供给到被检体。

公开(公告)号：US20060112974A1

公开(公告)日：2006-06-01

申请号：US11330004

申请日：2006-01-10

申请人： Yoichi Isago ,  Kazuo Nojiri ,  Naoaki Kobayashi ,  Teruo Saito ,  Shu Nakajima

发明人： Yoichi Isago ,  Kazuo Nojiri ,  Naoaki Kobayashi ,  Teruo Saito ,  Shu Nakajima

IPC分类号： B08B3/02

CPC分类号： H01L21/67051 ,  B01F3/022 ,  B01F3/04049 ,  B01F5/045 ,  B01F2215/0045 ,  B01F2215/0096 ,  B05B7/0433 ,  B05B7/0475 ,  B05B7/065 ,  B05B7/066 ,  B08B3/00 ,  B08B3/02 ,  G03F7/422 ,  Y10S134/902

摘要： The invention provides a water supplying apparatus and method thereof which has a high capacity of peeling and removing a disused material such as a resist film and the like, and can efficiently use water vapor. A water supplying apparatus for executing a washing process, a cleaning process and a working process of a subject, is provided with a water vapor body supplying means for supplying a water vapor body, and a water mist body supplying means for supplying a water mist body containing liquid water fine particles, and the structure is made such that said water vapor body and said water mist body are supplied to the subject by independently controlling said two means.

摘要翻译： 本发明提供了一种具有高剥离和去除诸如抗蚀剂膜等废弃材料的能力的供水装置及其方法，并且可以有效地使用水蒸气。 一种用于执行洗涤过程，清洁过程和对象的工作过程的供水设备设置有用于供应水蒸汽体的水蒸气体供应装置和用于供应水雾体的水雾体供应装置 并且通过独立地控制所述两个装置，将所述水蒸气体和所述水雾体供给到被检体。

公开(公告)号：US06656752B1

公开(公告)日：2003-12-02

申请号：US09890611

申请日：2001-10-11

申请人： Nobuyuki Mise ,  Tatehito Usui ,  Masato Ikegawa ,  Kazuo Nojiri ,  Kazuyuki Tsunokuni ,  Tetsuo Ono

发明人： Nobuyuki Mise ,  Tatehito Usui ,  Masato Ikegawa ,  Kazuo Nojiri ,  Kazuyuki Tsunokuni ,  Tetsuo Ono

IPC分类号： H01L2166

CPC分类号： H01L22/34

摘要： A wafer is exposed to a plasma. Here, the wafer includes a semiconductor or a conductor 1 provided on an insulator 6, an insulator 2 formed thereon and having a region the thickness of which has been made locally thin, and a 2nd conductor 4 provided on the insulator 2, one of the semiconductor or the conductor 1 and the 2nd conductor 4 having a 1st region from the surface of which a substantially total solid angle is formed, the other having a 2nd region a solid angle formed from the surface of which is made smaller than the 1st region. Then, a voltage is applied to the semiconductor or the conductor 1 and the 2nd conductor 4 so as to measure a time elapsing until the insulator 2 undergoes a dielectric breakdown. Moreover, the ion current density is determined from an electric charge required therefor and an area exposed onto the surface of the 2nd conductor 4. Consequently, it becomes possible to measure, on the wafer, the current density of the ions launched into the wafer, thereby allowing the measuring method of the icon current density to be made suitable for the mass production.

摘要翻译： 将晶片暴露于等离子体。 这里，晶片包括设置在绝缘体6上的半导体或导体1，形成在其上的绝缘体2，其厚度局部变薄的区域和设置在绝缘体2上的第二导体4， 半导体或导体1和第二导体4具有从其表面基本上具有总立体角的第一区域，另一个具有从其表面形成的立体角小于第一区域的第二区域。 然后，向半导体或导体1和第二导体4施加电压，以测量直到绝缘体2经历介电击穿的时间。 此外，离子电流密度由其所需的电荷和暴露于第二导体4的表面的面积确定。因此，可以在晶片上测量发射到晶片中的离子的电流密度， 从而允许图标电流密度的测量方法适合于批量生产。

公开(公告)号：US06340632B1

公开(公告)日：2002-01-22

申请号：US09585629

申请日：2000-06-02

申请人： Shinichi Fukada ,  Kazuo Nojiri ,  Takashi Yunogami ,  Shoji Hotta ,  Hideo Aoki ,  Takayuki Oshima ,  Nobuyoshi Kobayashi

发明人： Shinichi Fukada ,  Kazuo Nojiri ,  Takashi Yunogami ,  Shoji Hotta ,  Hideo Aoki ,  Takayuki Oshima ,  Nobuyoshi Kobayashi

IPC分类号： H01L214763

CPC分类号： H01L21/76874 ,  H01L21/76804 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76829 ,  H01L21/76843 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1036 ,  H01L2924/0002 ,  H01L2924/00

摘要： Insulating films 34 through 38 (of which insulating films 34, 36, 38 are silicon nitride films and insulating films 35, 38 are silicon oxide films) are sequentially formed on the wires 33 of the fourth wiring layer and groove pattern 40 is transferred into the insulating film 38 by means of photolithography. An anti-reflection film 41 is formed to fill the grooves 40 of the insulating film 38 and then a resist film 42 carrying a hole pattern 43 is formed. The films are subjected to an etching operation in the presence of the resist film 42 to transfer the hole pattern into the insulating films 38, 37, 36 and part of the insulating film 35. Subsequently, the resist film 42 and the anti-reflection film 41 are removed and the groove pattern 40 and the hole pattern 43 are transferred respectively into the insulating film 37 and the insulating film 35 by using the insulating film 38 as mask.

摘要翻译： 绝缘膜34至38（其绝缘膜34,36,38是氮化硅膜和绝缘膜35,38是氧化硅膜）依次形成在第四布线层的布线33上，并将凹槽图案40转移到 绝缘膜38。 形成防反射膜41以填充绝缘膜38的槽40，然后形成承载孔图案43的抗蚀剂膜42。 在存在抗蚀剂膜42的情况下对膜进行蚀刻操作，以将孔图案转印到绝缘膜38,37,36和绝缘膜35的一部分中。随后，将抗蚀剂膜42和抗反射膜 41，并且通过使用绝缘膜38作为掩模将槽图案40和孔图案43分别转印到绝缘膜37和绝缘膜35中。

公开(公告)号：US6077788A

公开(公告)日：2000-06-20

申请号：US469998

申请日：1995-06-06

申请人： Yoshinao Kawasaki ,  Hironobu Kawahara ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Kazuo Nojiri ,  Yoshimi Torii

发明人： Yoshinao Kawasaki ,  Hironobu Kawahara ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Kazuo Nojiri ,  Yoshimi Torii

IPC分类号： C23F4/00 ,  H01L21/00 ,  H01L21/677 ,  H01L21/302 ,  C23F1/02

CPC分类号： H01L21/67161 ,  C23F4/00 ,  H01L21/67028 ,  H01L21/67745 ,  H01L21/67751

摘要： Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus, the samples being selectively etched through use of a resist mask), (b) for removing (ashing) the resist mask, (c) for wet-processing of the samples and (d) for dry-processing the samples. Samples are passed sequentially from a supply cassette (containing a plurality of samples) to the plasma etching apparatus, through the other apparatus and to a discharge cassette (which can hold a plurality of the samples). At least two of the samples can be processed simultaneously in a path from (and including), the plasma etching apparatus to (and including) the wet-processing structure.

摘要翻译： 公开了用于处理样品的装置以及使用该装置的方法。 该装置包括用于处理样品的处理装置（例如，等离子体蚀刻装置，通过使用抗蚀剂掩模选择性地蚀刻样品），（b）去除（灰化）抗蚀剂掩模，（c） 处理样品和（d）干燥处理样品。 样品从供应盒（含有多个样品）顺序地通过另一个装置和放电盒（可以容纳多个样品）通过等离子体蚀刻装置。 至少两个样品可以在等离子体蚀刻装置（并且包括）湿法处理结构的路径中（并且包括）的同时进行处理。

公开(公告)号：US5917211A

公开(公告)日：1999-06-29

申请号：US979543

申请日：1997-11-25

申请人： Jun Murata ,  Yoshitaka Tadaki ,  Hiroko Kaneko ,  Toshihiro Sekiguchi ,  Hiroyuki Uchiyama ,  Hisashi Nakamura ,  Toshio Maeda ,  Osamu Kasahara ,  Hiromichi Enami ,  Atsushi Ogishima ,  Masaki Nagao ,  Michimasa Funabashi ,  Yasuo Kiguchi ,  Masayuki Kojima ,  Atsuyoshi Koike ,  Hiroyuki Miyazawa ,  Masato Sadaoka ,  Kazuya Kadota ,  Tadashi Chikahara ,  Kazuo Nojiri ,  Yutaka Kobayashi

发明人： Jun Murata ,  Yoshitaka Tadaki ,  Hiroko Kaneko ,  Toshihiro Sekiguchi ,  Hiroyuki Uchiyama ,  Hisashi Nakamura ,  Toshio Maeda ,  Osamu Kasahara ,  Hiromichi Enami ,  Atsushi Ogishima ,  Masaki Nagao ,  Michimasa Funabashi ,  Yasuo Kiguchi ,  Masayuki Kojima ,  Atsuyoshi Koike ,  Hiroyuki Miyazawa ,  Masato Sadaoka ,  Kazuya Kadota ,  Tadashi Chikahara ,  Kazuo Nojiri ,  Yutaka Kobayashi

IPC分类号： H01L21/8234 ,  H01L27/105 ,  H01L27/08 ,  H01L29/76 ,  H01L29/94

CPC分类号： H01L27/105 ,  H01L21/823425

摘要： A semiconductor integrated circuit comprising first n-channel MISFETs constituting the memory cells of a storage system, second n-channel MISFETs constituting the peripheral circuits of the storage system, and third n-channel MISFETs constituting the output circuit among the peripheral circuits. The respective threshold voltages of the first n-channel MISFETs, the second n-channel MISFETs and the third n-channel MISFETs are decreased in that order when the respective gate lengths of those MISFETs are substantially the same.

摘要翻译： 一种半导体集成电路，包括构成存储系统的存储单元的第一n沟道MISFET，构成存储系统的外围电路的第二n沟道MISFET和构成外围电路中的输出电路的第三n沟道MISFET。 当这些MISFET的各个栅极长度基本相同时，第一n沟道MISFET，第二n沟道MISFET和第三n沟道MISFET的阈值电压依次减小。

公开(公告)号：US5568277A

公开(公告)日：1996-10-22

申请号：US464556

申请日：1995-06-06

申请人： Yasuhiro Hatano ,  Hajime Takayama ,  Yasushi Fukada ,  Kazuhiko Kurita ,  Kazuo Nojiri

发明人： Yasuhiro Hatano ,  Hajime Takayama ,  Yasushi Fukada ,  Kazuhiko Kurita ,  Kazuo Nojiri

IPC分类号： H04N1/00 ,  H04N1/12 ,  H04N1/193 ,  H04N1/04 ,  H04N1/191

CPC分类号： H04N1/00525 ,  H04N1/121 ,  H04N1/00885 ,  H04N1/193

摘要： The facsimile apparatus includes a casing with a handset arranged on a side thereof. Within the casing are disposed a network control section adjacent the handset and a power supply section opposite the network control section. A control board is arranged above the network control and power supply sections. The control board includes an analog signal control section adjacent to the network control section, a driving control section adjacent to the power supply section for driving a preselected electrical part, and a digital signal control section between the analog signal control section and the driving control section.

摘要翻译： 该传真装置包括一个设置在其一侧的手机壳体。 在壳体内设置有与手机相邻的网络控制部分和与网络控制部分相对的电源部分。 控制板设置在网络控制和电源部分上方。 控制板包括与网络控制部分相邻的模拟信号控制部分，与电源部分相邻的用于驱动预选电气部分的驱动控制部分，以及模拟信号控制部分和驱动控制部分之间的数字信号控制部分 。

公开(公告)号：US5433789A

公开(公告)日：1995-07-18

申请号：US010051

申请日：1993-01-28

申请人： Yutaka Kakehi ,  Yoshinao Kawasaki ,  Keizo Suzuki ,  Kazuo Nojiri ,  Hiromichi Enami ,  Tetsunori Kaji ,  Seiichi Watanabe ,  Yoshifumi Ogawa

发明人： Yutaka Kakehi ,  Yoshinao Kawasaki ,  Keizo Suzuki ,  Kazuo Nojiri ,  Hiromichi Enami ,  Tetsunori Kaji ,  Seiichi Watanabe ,  Yoshifumi Ogawa

IPC分类号： C23C16/511 ,  H01J37/32 ,  C23C16/30 ,  H05H1/46

CPC分类号： H01J37/32229 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/32284

摘要： A plasma processing apparatus has a waveguide along which microwaves are propagated from a microwave generator to a plasma-forming region in a low-pressure processing chamber. The waveguide has a large cross-sectional area, to enable a large region of plasma to be achieved. Uniformity and stability of the plasma are improved by a mode restrictor which inhibits mixing of propagation modes which is otherwise liable to occur in a wide waveguide. The mode restrictor consists of electrically-conductive dividers which divide the waveguide cross-section into an array of sub-guides before the plasma-forming region.

摘要翻译： 等离子体处理装置具有微波从微波发生器传播到低压处理室中的等离子体形成区域的波导。 波导具有大的横截面面积，以实现等离子体的大区域。 等离子体的均匀性和稳定性通过抑制混合传播模式的模式限制器来改善，否则传播模式容易发生在宽波导中。 模式限制器由导电分配器组成，其在等离子体形成区域之前将波导横截面分成子导轨阵列。

公开(公告)号：US07737023B2

公开(公告)日：2010-06-15

申请号：US12194044

申请日：2008-08-19

申请人： Shouochi Uno ,  Atsushi Maekawa ,  Takashi Yunogami ,  Kazutami Tago ,  Kazuo Nojiri ,  Shuntaro Machida ,  Takafumi Tokunaga

发明人： Shouochi Uno ,  Atsushi Maekawa ,  Takashi Yunogami ,  Kazutami Tago ,  Kazuo Nojiri ,  Shuntaro Machida ,  Takafumi Tokunaga

IPC分类号： H01L21/4763

CPC分类号： H01L21/02126 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3122 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76829 ,  H01L21/76835

摘要： In a process for the manufacture of a semiconductor integrated circuit device having an inlaid interconnect structure by embedding a conductor film in a recess, such as a trench or hole, formed in an organic insulating film which constitutes an interlevel dielectric film and includes an organosiloxane as a main component, the recess, such as a trench or hole, is formed by subjecting the organic insulating film to plasma dry etching in a CF-based gas/N2/Ar gas in order to suppress the formation of an abnormal shape on the bottom of the recess, upon formation of a photoresist film over the organic insulating film, followed by formation of the recess therein with the photoresist film as an etching mask.

摘要翻译： 在制造具有嵌入式互连结构的半导体集成电路器件的方法中，通过将导体膜嵌入形成在构成层间电介质膜的有机绝缘膜中的凹槽（例如沟槽或孔）中，并且包括有机硅氧烷作为 通过在CF基气体/ N 2 / Ar气体中对有机绝缘膜进行等离子体干蚀刻来形成主要部件，凹槽，例如沟槽或孔，以抑制底部形成异常形状 在有机绝缘膜上形成光致抗蚀剂膜之后，随后用光致抗蚀剂膜作为蚀刻掩模形成凹部。