公开(公告)号：US20220028710A1

公开(公告)日：2022-01-27

申请号：US16934227

申请日：2020-07-21

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Yang Guo ,  Seyyed Abdolreza Fazeli ,  Nitin Pathak ,  Badri N. Ramamurthi ,  Kallol Bera ,  Xiaopu Li ,  Philip A. Kraus ,  Swaminathan T. Srinivasan

IPC: H01L21/67 ,  B65G47/90

Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body along a first surface of the first lid plate. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of apertures of the plurality of apertures defined through the first lid plate. The systems may include a plurality of isolators. An isolator of the plurality of isolators may be positioned between each lid stack of the plurality of lid stacks and a corresponding aperture of the plurality of apertures defined through the first lid plate. The systems may include a plurality of dielectric plates. A dielectric plate of the plurality of dielectric plates may be seated on each isolator of the plurality of isolators.

公开(公告)号：US20210090877A1

公开(公告)日：2021-03-25

申请号：US17025373

申请日：2020-09-18

Applicant: Applied Materials, Inc.

Inventor： Hanhong Chen ,  Philip A. Kraus ,  Joseph AuBuchon

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455

Abstract: A method of depositing nitride films is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing nitride films which utilizes separate reaction and nitridation plasmas. In some embodiments, the nitride films have improved growth per cycle (GPC) relative to films deposited by thermal processes or plasma processes with only a single plasma exposure. In some embodiments, the nitride films have improved film quality relative to films deposited by thermal processes or plasma processes with only a single plasma exposure.

公开(公告)号：US20180330927A1

公开(公告)日：2018-11-15

申请号：US15980158

申请日：2018-05-15

Applicant: Applied Materials, Inc.

Inventor： Kallol Bera ,  Anantha K. Subramani ,  John C. Forster ,  Philip A. Kraus ,  Farzad Houshmand ,  Hanhong Chen

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/67 ,  H01L21/02 ,  C23C16/50 ,  C23C16/455

CPC classification number: H01J37/32715 ,  C23C16/45544 ,  C23C16/50 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32559 ,  H01J37/32568 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/67017 ,  H01L21/68764 ,  H01L21/68771

Abstract: Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode.

公开(公告)号：US20170148626A1

公开(公告)日：2017-05-25

申请号：US15353315

申请日：2016-11-16

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Kaushal Gangakhedkar ,  Abhishek Chowdhury ,  John C. Forster ,  Nattaworn Nuntaworanuch ,  Kallol Bera ,  Philip A. Kraus ,  Farzad Houshmand

IPC: H01L21/02 ,  H01L21/687 ,  H01L21/285

CPC classification number: H01L21/0234 ,  C23C16/45536 ,  C23C16/45551 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32568 ,  H01L21/0228 ,  H01L21/28556 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

Abstract: Plasma source assemblies comprising a housing with an RF hot electrode and a return electrode are described. The housing includes a gas inlet and a front face defining a flow path. The RF hot electrode includes a first surface oriented substantially parallel to the flow path. The return electrode includes a first surface oriented substantially parallel to the flow path and spaced from the first surface of the RF hot electrode to form a gap. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.

公开(公告)号：US20170140900A1

公开(公告)日：2017-05-18

申请号：US14940539

申请日：2015-11-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Leonid Dorf ,  Shahid Rauf ,  Vladimir Knyazik ,  Philip A. Kraus ,  Ying Zhang

IPC: H01J37/32

CPC classification number: H01J37/32422 ,  H01J37/06 ,  H01J37/3211 ,  H01J37/3233 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32807

Abstract: To generate a plasma for processing a workpiece, an electron beam is introduced into a plasma reactor chamber by radial injection using an annular electron beam source distributed around the circular periphery of the chamber to provide azimuthal uniformity. The electron beam propagation path is tilted upwardly away from the workpiece, either by tilting the electron beam source or by a magnetic field. In other embodiments, there are plural opposing electron beams from linear electron beam sources directed toward the center of the plasma reactor chamber.