公开(公告)号：US11069522B2

公开(公告)日：2021-07-20

申请号：US16540349

申请日：2019-08-14

Applicant: ASM IP HOLDING B.V.

Inventor： Antti J. Niskanen ,  Shang Chen ,  Viljami Pore ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Suvi P. Haukka

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/8234

Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).

公开(公告)号：US10435790B2

公开(公告)日：2019-10-08

申请号：US15340512

申请日：2016-11-01

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Masaru Zaitsu ,  Masaki Tokunaga ,  Hideaki Fukuda

IPC: C23C16/505 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  C23C16/52 ,  C23C16/04

Abstract: A method for depositing a film by plasma-enhanced subatmospheric-pressure atomic layer deposition (subatmospheric PEALD) is conducted using capacitively coupled parallel plate electrodes with a gap of 1 mm to 5 mm, wherein one cycle of subatmospheric PEALD includes: supplying a precursor in a pulse to the reaction chamber; continuously supplying a reactant to the reaction chamber; continuously supplying an inert gas to the reaction chamber; continuously controlling a pressure of the reaction chamber in a range of 15 kPa to 80 kPa; and applying RF power for glow discharge in a pulse to one of the parallel plate electrodes.

公开(公告)号：US10395917B2

公开(公告)日：2019-08-27

申请号：US15902300

申请日：2018-02-22

Applicant: ASM IP HOLDING B.V.

Inventor： Antti J. Niskanen ,  Shang Chen ,  Viljami Pore ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Suvi P. Haukka

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/8234

Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).

公开(公告)号：US09627221B1

公开(公告)日：2017-04-18

申请号：US14981434

申请日：2015-12-28

Applicant: ASM IP Holding B.V.

Inventor： Masaru Zaitsu ,  Atsuki Fukazawa ,  Hideaki Fukuda

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  C23C16/045 ,  C23C16/45534 ,  C23C16/4554 ,  H01J37/32091 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

Abstract: A method of continuous fabrication of a layered structure on a substrate having a patterned recess, includes: (i) forming a dielectric layer on a substrate having a patterned recess in a reaction chamber by PEALD using a first RF power; (ii) continuously after completion of step (i) without breaking vacuum, etching the dielectric layer on the substrate in the reaction chamber by PEALE using a second RF power, wherein a pressure of the reaction chamber is controlled at 30 Pa to 1,333 Pa throughout steps (i) and (ii); a noble gas is supplied to the reaction chamber continuously throughout steps (i) and (ii); and the second RF power is higher than the first RF power.

公开(公告)号：US09576790B2

公开(公告)日：2017-02-21

申请号：US14686595

申请日：2015-04-14

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami J. Pore ,  Yosuke Kimura ,  Kunitoshi Namba ,  Wataru Adachi ,  Hideaki Fukuda ,  Werner Knaepen ,  Dieter Pierreux ,  Bert Jongbloed

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/30 ,  C23C16/32 ,  C23C16/455 ,  H01L21/311

CPC classification number: H01L21/02112 ,  C23C16/045 ,  C23C16/30 ,  C23C16/32 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45531 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/2254 ,  H01L21/31111

Abstract: Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B, C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. One or more of the boron and carbon containing films can have a thickness of less than about 30 angstroms. Methods of doping a semiconductor substrate are provided. Doping a semiconductor substrate can include depositing a boron and carbon film over the semiconductor substrate by exposing the substrate to a vapor phase boron precursor at a process temperature of about 300° C. to about 450° C., where the boron precursor includes boron, carbon and hydrogen, and annealing the boron and carbon film at a temperature of about 800° C. to about 1200° C.

Abstract translation: 提供了沉积硼和碳的膜的方法。 在一些实施例中，提供了沉积具有所需性质（诸如保形性和蚀刻速率）的B，C膜的方法。 一种或多种含硼和/或碳的前体可以在低于约400℃的温度下在基材上分解。含硼和碳的一种或多种膜可以具有小于约30埃的厚度。 提供掺杂半导体衬底的方法。 掺杂半导体衬底可以包括通过在大约300℃至大约450℃的工艺温度下将衬底暴露于气相硼前体而在半导体衬底上沉积硼和碳膜，其中硼前体包括硼， 碳和氢，并在约800℃至约1200℃的温度下退火硼和碳膜。

公开(公告)号：US20160168699A1

公开(公告)日：2016-06-16

申请号：US14568647

申请日：2014-12-12

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Hideaki Fukuda

IPC: C23C16/44 ,  C23C16/34 ,  C23C16/40 ,  C23C16/505 ,  C23C16/455

CPC classification number: C23C16/4402 ,  C23C16/34 ,  C23C16/405 ,  C23C16/4554 ,  C23C16/45553 ,  C23C16/45561 ,  C23C16/505

Abstract: A method for forming a metal oxide or nitride film on a substrate by plasma-enhanced atomic layer deposition (PEALD), includes: introducing an amino-based metal precursor in a pulse to a reaction space where a substrate is placed, using a carrier gas; and continuously introducing a reactant gas to the reaction space; applying RF power in a pulse to the reaction space wherein the pulse of the precursor and the pulse of RF power do not overlap, wherein conducted is at least either step (a) comprising passing the carrier gas through a purifier for reducing impurities before mixing the carrier gas with the precursor, or step (b) introducing the reactant gas at a flow rate such that a partial pressure of the reactant gas relative to the total gas flow provided in the reaction space is 15% or less.

Abstract translation: 通过等离子体增强原子层沉积（PEALD）在衬底上形成金属氧化物或氮化物膜的方法包括：使用载气将脉冲中的氨基类金属前体引入放置衬底的反应空间 ; 并将反应气体连续地引入到反应空间中; 将RF功率脉冲施加到反应空间，其中前体的脉冲和RF功率的脉冲不重叠，其中传导至少是步骤（a），其包括使载气通过净化器以减少混合之前的杂质 载体气体与前体反应，或者步骤（b）以使得反应气体相对于在反应空间中提供的总气流的分压为15％以下的流量引入反应气体。

公开(公告)号：US09343297B1

公开(公告)日：2016-05-17

申请号：US14693138

申请日：2015-04-22

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Hideaki Fukuda

IPC: H01L21/00 ,  H01L21/02

CPC classification number: H01L21/0228 ,  C23C16/45531 ,  C23C16/4554 ,  H01L21/02112 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02142 ,  H01L21/02274 ,  H01L21/02321 ,  H01L21/02323 ,  H01L21/02329 ,  H01L21/0234

Abstract: A single-phase multi-element film constituted by at least four elements is formed on a substrate by plasma-enhanced atomic layer deposition (PEALD) conducting one or more process cycles. Each process cycle includes: (i) forming an integrated multi-element layer constituted by at least three elements on a substrate by PEALD using at least one precursor; and (ii) treating a surface of the integrated multi-element layer with a reactive oxygen, nitrogen, and/or carbon in the absence of a precursor for film formation so as to incorporate at least one new additional element selected from oxygen, nitrogen, and carbon into the integrated multi-element layer.

Abstract translation: 通过进行一个或多个工艺循环的等离子体增强原子层沉积（PEALD）在衬底上形成由至少四个元件构成的单相多元件膜。 每个工艺循环包括：（i）使用至少一种前体，通过PEALD在衬底上形成由至少三个元件构成的集成多元件层; 和（ii）在没有用于成膜的前体的情况下用活性氧，氮和/或碳处理所述整合的多元素层的表面，以便引入至少一种选自氧，氮， 和碳进入集成的多元素层。

公开(公告)号：US20140273531A1

公开(公告)日：2014-09-18

申请号：US14062328

申请日：2013-10-24

Applicant: ASM IP HOLDING B.V.

Inventor： Antti J. Niskanen ,  Shang Chen ,  Viljami Pore ,  Atsuki Fukazawa ,  Hideaki Fukuda

IPC: H01L21/02

CPC classification number: H01L21/0217 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45542 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L29/66795

Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).

公开(公告)号：US20140141625A1

公开(公告)日：2014-05-22

申请号：US13679502

申请日：2012-11-16

Applicant: ASM IP HOLDING B.V.

Inventor： Atsuki Fukazawa ,  Hideaki Fukuda

IPC: H01L21/02

CPC classification number: H01L21/02167 ,  C23C16/24 ,  C23C16/345 ,  C23C16/36 ,  C23C16/45542 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/32055

Abstract: A method of forming an insulation film on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: (i) adsorbing a non-excited non-halide precursor having four or more silicon atoms in its molecule onto a substrate placed in a reaction space; (ii) supplying an oxygen-free reactant to the reaction space without applying RF power so as to expose the precursor-adsorbed substrate to the reactant; and (iii) after step (ii), applying RF power to the reaction space while the oxygen-free reactant is supplied in the reaction space; and (iv) repeating steps (i) to (iii) as a cycle, thereby depositing an insulation film on the substrate.

Abstract translation: 通过等离子体增强原子层沉积（PEALD）在半导体衬底上形成绝缘膜的方法包括：（i）将其分子中具有四个或更多个硅原子的未激发的非卤化物前体吸附到放置在 反应空间; （ii）在不施加RF功率的情况下向反应空间供应无氧反应物，以将前体吸附的基底暴露于反应物; 和（iii）在步骤（ii）之后，将RF功率施加到反应空间，同时在反应空间中供应无氧反应物; 和（iv）重复步骤（i）至（iii）作为循环，从而在基材上沉积绝缘膜。