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    BOTTOM-UP GAP FILL PROCESSES FOR SEMICONDUCTOR SUBSTRATES
    32.
    发明申请
    BOTTOM-UP GAP FILL PROCESSES FOR SEMICONDUCTOR SUBSTRATES 有权

    公开(公告)号：US20250006552A1

    公开(公告)日：2025-01-02

    申请号：US18753144

    申请日：2024-06-25

    Applicant: Applied Materials Inc.

    Inventor： Liqi Wu ,  Rongjun Wang ,  Feng Q. Liu ,  Qihao Zhu ,  Jiang Lu ,  David Thompson ,  Xianmin Tang

    IPC: H01L21/768 ,  H01L21/3213

    Abstract: Embodiments of the disclosure relate to methods of selectively depositing a metallic material after forming a flowable polymer film to protect a substrate surface within a feature. A first metal liner is deposited by physical vapor deposition (PVD). The flowable polymer film is formed on the first metal liner on the bottom. A portion of the first metal liner is selectively removed from the top surface and the at least one sidewall. The flowable polymer film is removed. In some embodiments, the cycle of depositing a metal liner, forming a flowable polymer film, removing a portion of the metal liner, and removing the flowable polymer film is repeated at least once. A metal layer is deposited on the plurality of metal liners (e.g., first metal liner and the second metal liner) and the metal layer is free of seams or voids.

    SELECTIVE DEPOSITION PROCESSES ON SEMICONDUCTOR SUBSTRATES
    33.
    发明申请
    SELECTIVE DEPOSITION PROCESSES ON SEMICONDUCTOR SUBSTRATES 有权

    公开(公告)号：US20250006485A1

    公开(公告)日：2025-01-02

    申请号：US18216286

    申请日：2023-06-29

    Applicant: Applied Materials, Inc.

    Inventor： Mark Saly ,  Feng Q. Liu ,  Bhaskar Jyoti Bhuyan ,  Jeffrey W. Anthis ,  David Thompson

    IPC: H01L21/02 ,  H01L21/311

    Abstract: Embodiments of the disclosure relate to methods of selectively depositing polysilicon after forming a flowable polymer film to protect a substrate surface within a feature. A first silicon (Si) layer is deposited by physical vapor deposition (PVD). The flowable polymer film is formed on the first silicon (Si) layer on the bottom. A portion of the first silicon (Si) layer is selectively removed from the top surface and the at least one sidewall. The flowable polymer film is removed. In some embodiments, a second silicon (Si) layer is selectively deposited on the first silicon (Si) layer to fill the feature. In some embodiments, the remaining portion of the first silicon (Si) layer on the bottom is oxidized to form a first silicon oxide (SiOx) layer on the bottom, and a silicon (Si) layer or a second silicon oxide (SiOx) layer is deposited on the first silicon oxide (SiOx) layer.

    Methods for selective dry etching gallium oxide
    35.
    发明授权
    Methods for selective dry etching gallium oxide 有权

    公开(公告)号：US11942330B2

    公开(公告)日：2024-03-26

    申请号：US17836694

    申请日：2022-06-09

    Applicant: Applied Materials, Inc.

    Inventor： Feng Q. Liu ,  Lisa J. Enman ,  Lakmal C. Kalutarage ,  Mark J. Saly

    IPC: H01L21/311 ,  H01L21/02

    CPC classification number: H01L21/31122 ,  H01L21/02175

    Abstract: Exemplary methods of etching gallium oxide from a semiconductor substrate may include flowing a first reagent in a substrate processing region housing the semiconductor substrate. The first reagent may include HX. X may be at least one of fluorine, chlorine, and bromine. The semiconductor substrate may include an exposed region of gallium oxide. Fluorinating the exposed region of gallium oxide may form a gallium halide and H2O. The methods may include flowing a second reagent in the substrate processing region. The second reagent may be at least one of trimethylgallium, tin acetylacetonate, tetramethylsilane, and trimethyltin chloride. The second reagent may promote a ligand exchange where a methyl group may be transferred to the gallium halide to form a volatile Me2GaY or Me3Ga. Y may be at least one of fluorine, chlorine, and bromine from the second reagent. The methods may include recessing a surface of the gallium oxide.

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