公开(公告)号：US09040422B2

公开(公告)日：2015-05-26

申请号：US13908107

申请日：2013-06-03

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Anchuan Wang ,  Nitin K. Ingle ,  Dmitry Lubomirsky

IPC: H01L21/3213 ,  H01L21/48 ,  H01L21/28 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/32136 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/02068 ,  H01L21/28 ,  H01L21/3065 ,  H01L21/32135 ,  H01L21/4814

Abstract: Methods are described herein for selectively etching titanium nitride relative to dielectric films, which may include, for example, alternative metals and metal oxides lacking in titanium and/or silicon-containing films (e.g. silicon oxide, silicon carbon nitride and low-K dielectric films). The methods include a remote plasma etch formed from a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride. The plasma effluents react with exposed surfaces and selectively remove titanium nitride while very slowly removing the other exposed materials. The substrate processing region may also contain a plasma to facilitate breaking through any titanium oxide layer present on the titanium nitride. The plasma in the substrate processing region may be gently biased relative to the substrate to enhance removal rate of the titanium oxide layer.

Abstract translation: 本文描述了相对于电介质膜选择性地蚀刻氮化钛的方法，其可以包括例如不含钛和/或含硅膜的替代金属和金属氧化物（例如氧化硅，氮化碳和低K电介质膜 ）。 这些方法包括由含氯前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与氮化钛反应。 等离子体流出物与暴露的表面反应并选择性地去除氮化钛，同时非常缓慢地除去其它暴露的材料。 衬底处理区域还可以包含等离子体以便于破坏存在于氮化钛上的任何氧化钛层。 衬底处理区域中的等离子体可以相对于衬底轻轻地偏置，以提高氧化钛层的去除速率。

公开(公告)号：US09023734B2

公开(公告)日：2015-05-05

申请号：US13834611

申请日：2013-03-15

Applicant: Applied Materials, Inc.

Inventor： Zhijun Chen ,  Jingchun Zhang ,  Ching-Mei Hsu ,  Seung Park ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/302 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/32357

Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a nitrogen-and-hydrogen-containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high silicon oxide selectivity while the substrate is at high temperature compared to typical Siconi™ processes. The etch proceeds without producing residue on the substrate surface. The methods may be used to remove silicon oxide while removing little or no silicon, polysilicon, silicon nitride or titanium nitride.

Abstract translation: 描述了在图案化异质结构上蚀刻暴露的氧化硅的方法，并且包括由含氟前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与含氮和氢的前体结合。 因此，与典型的Siconi TM工艺相比，反应物在衬底处于高温下时蚀刻具有高氧化硅选择性的图案化异质结构。 蚀刻进行而不会在基板表面上产生残留物。 该方法可以用于去除硅或氧化硅，同时除去硅或多晶硅，氮化硅或氮化钛。

公开(公告)号：US08980763B2

公开(公告)日：2015-03-17

申请号：US13840206

申请日：2013-03-15

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Ching-Mei Hsu ,  Nitin K. Ingle ,  Zihui Li ,  Anchuan Wang

IPC: H01L21/302 ,  H01L21/3213 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01L21/02049 ,  H01L21/32136

Abstract: Methods of selectively etching tungsten relative to silicon-containing films (e.g. silicon oxide, silicon carbon nitride and (poly)silicon) as well as tungsten oxide are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten. The plasma effluents react with exposed surfaces and selectively remove tungsten while very slowly removing other exposed materials. Sequential and simultaneous methods are included to remove thin tungsten oxide which may, for example, result from exposure to the atmosphere.

Abstract translation: 描述了相对于含硅膜（例如氧化硅，氮化碳和（多）硅）选择性地蚀刻钨的方法以及氧化钨。 这些方法包括由含氟前体和/或氢（H 2）形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与钨反应。 等离子体流出物与暴露的表面反应并选择性地去除钨，同时非常缓慢地除去其它暴露的材料。 包括顺序和同时的方法以除去例如由于暴露于大气中而产生的薄氧化钨。

公开(公告)号：US20140302688A1

公开(公告)日：2014-10-09

申请号：US13934863

申请日：2013-07-03

Applicant: Applied Materials, Inc.

Inventor： Brian Saxton Underwood ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/02

CPC classification number: H01L21/02216 ,  C23C16/401 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274

Abstract: Methods are described for forming a dielectric layer on a patterned substrate. The methods may include combining a silicon-and-carbon-containing precursor and a radical oxygen precursor in a plasma free substrate processing region within a chemical vapor deposition chamber. The silicon-and-carbon-containing precursor and the radical oxygen precursor react in to deposit a flowable silicon-carbon-oxygen layer on the patterned substrate. The resulting film possesses a low wet etch rate ratio relative to thermal silicon oxide and other standard dielectrics.

Abstract translation: 描述了在图案化衬底上形成电介质层的方法。 所述方法可以包括在化学气相沉积室内的无等离子体衬底处理区域中组合含硅和碳的前体和自由基氧前体。 含硅和碳的前体和自由基氧前体反应以在图案化的衬底上沉积可流动的硅 - 碳 - 氧层。 所得膜相对于热氧化硅和其它标准电介质具有低的湿蚀刻速率比。

公开(公告)号：US20140256131A1

公开(公告)日：2014-09-11

申请号：US13908107

申请日：2013-06-03

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Anchuan Wang ,  Nitin K. Ingle ,  Dmitry Lubomirsky

IPC: H01L21/3213 ,  H01L21/48 ,  H01L21/28

CPC classification number: H01L21/32136 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/02068 ,  H01L21/28 ,  H01L21/3065 ,  H01L21/32135 ,  H01L21/4814

Abstract: Methods are described herein for selectively etching titanium nitride relative to dielectric films, which may include, for example, alternative metals and metal oxides lacking in titanium and/or silicon-containing films (e.g. silicon oxide, silicon carbon nitride and low-K dielectric films). The methods include a remote plasma etch formed from a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride. The plasma effluents react with exposed surfaces and selectively remove titanium nitride while very slowly removing the other exposed materials. The substrate processing region may also contain a plasma to facilitate breaking through any titanium oxide layer present on the titanium nitride. The plasma in the substrate processing region may be gently biased relative to the substrate to enhance removal rate of the titanium oxide layer.

Abstract translation: 本文描述了相对于电介质膜选择性地蚀刻氮化钛的方法，其可以包括例如不含钛和/或含硅膜的替代金属和金属氧化物（例如氧化硅，氮化碳和低K电介质膜 ）。 这些方法包括由含氯前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与氮化钛反应。 等离子体流出物与暴露的表面反应并选择性地去除氮化钛，同时非常缓慢地除去其它暴露的材料。 衬底处理区域还可以包含等离子体以便于破坏存在于氮化钛上的任何氧化钛层。 衬底处理区域中的等离子体可以相对于衬底轻轻地偏置，以提高氧化钛层的去除速率。

公开(公告)号：US20140248780A1

公开(公告)日：2014-09-04

申请号：US14186059

申请日：2014-02-21

Applicant: Applied Materials, Inc.

Inventor： Nitin K. Ingle ,  Dmitry Lubomirsky ,  Xinglong Chen ,  Shankar Venkataraman

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/334

Abstract: Methods of etching a patterned substrate may include flowing an oxygen-containing precursor into a first remote plasma region fluidly coupled with a substrate processing region. The oxygen-containing precursor may be flowed into the region while forming a plasma in the first remote plasma region to produce oxygen-containing plasma effluents. The methods may also include flowing a fluorine-containing precursor into a second remote plasma region fluidly coupled with the substrate processing region while forming a plasma in the second remote plasma region to produce fluorine-containing plasma effluents. The methods may include flowing the oxygen-containing plasma effluents and fluorine-containing plasma effluents into the processing region, and using the effluents to etch a patterned substrate housed in the substrate processing region.

Abstract translation: 蚀刻图案化衬底的方法可以包括使含氧前体流入与衬底处理区流体耦合的第一远程等离子体区域。 可以在第一远程等离子体区域中形成等离子体的同时将含氧前体流入该区域以产生含氧等离子体流出物。 所述方法还可以包括使含氟前体流入与基板处理区流体耦合的第二远程等离子体区域，同时在第二远程等离子体区域中形成等离子体以产生含氟等离子体流出物。 所述方法可以包括将含氧等离子体流出物和含氟等离子体流出物流入处理区域，并且使用流出物蚀刻容纳在基板处理区域中的图案化基板。

公开(公告)号：US20140154889A1

公开(公告)日：2014-06-05

申请号：US13840206

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Xikun Wang ,  Ching-Mei Hsu ,  Nitin K. Ingle ,  Zihui Li ,  Anchuan Wang

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01L21/02049 ,  H01L21/32136

Abstract: Methods of selectively etching tungsten relative to silicon-containing films (e.g. silicon oxide, silicon carbon nitride and (poly)silicon) as well as tungsten oxide are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten. The plasma effluents react with exposed surfaces and selectively remove tungsten while very slowly removing other exposed materials. Sequential and simultaneous methods are included to remove thin tungsten oxide which may, for example, result from exposure to the atmosphere.

Abstract translation: 描述了相对于含硅膜（例如氧化硅，氮化碳和（多）硅）选择性地蚀刻钨的方法以及氧化钨。 这些方法包括由含氟前体和/或氢（H 2）形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与钨反应。 等离子体流出物与暴露的表面反应并选择性地去除钨，同时非常缓慢地除去其它暴露的材料。 包括顺序和同时的方法以除去例如由于暴露于大气中而产生的薄氧化钨。

公开(公告)号：US20140080308A1

公开(公告)日：2014-03-20

申请号：US13834611

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Zhijun Chen ,  Jingchun Zhang ,  Ching-Mei Hsu ,  Seung Park ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01J37/32357

Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a nitrogen-and-hydrogen-containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high silicon oxide selectivity while the substrate is at high temperature compared to typical Siconi™ processes. The etch proceeds without producing residue on the substrate surface. The methods may be used to remove silicon oxide while removing little or no silicon, polysilicon, silicon nitride or titanium nitride.

Abstract translation: 描述了在图案化异质结构上蚀刻暴露的氧化硅的方法，并且包括由含氟前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与含氮和氢的前体结合。 因此，与典型的Siconi TM工艺相比，反应物在衬底处于高温下时蚀刻具有高氧化硅选择性的图案化异质结构。 蚀刻进行而不会在基板表面上产生残留物。 该方法可以用于去除硅或氧化硅，同时除去硅或多晶硅，氮化硅或氮化钛。

公开(公告)号：US20140073144A1

公开(公告)日：2014-03-13

申请号：US13668657

申请日：2012-11-05

Applicant: Applied Materials, Inc.

Inventor： Amit Chatterjee ,  Abhijit Basu Mallick ,  Nitin K. Ingle ,  Brian Underwood ,  Kiran V. Thadani ,  Xiaolin Chen ,  Abhishek Dube ,  Jingmei Liang

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  C23C16/401 ,  C23C16/505 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219

Abstract: A method of forming a dielectric layer is described. The method deposits a silicon-containing film by chemical vapor deposition using a local plasma. The silicon-containing film is flowable during deposition at low substrate temperature. A silicon precursor (e.g. a silylamine, higher order silane or halogenated silane) is delivered to the substrate processing region and excited in a local plasma. A second plasma vapor or gas is combined with the silicon precursor in the substrate processing region and may include ammonia, nitrogen (N2), argon, hydrogen (H2) and/or oxygen (O2). The equipment configurations disclosed herein in combination with these vapor/gas combinations have been found to result in flowable deposition at substrate temperatures below or about 200° C. when a local plasma is excited using relatively low power.

Abstract translation: 描述形成电介质层的方法。 该方法通过使用局部等离子体的化学气相沉积法沉积含硅膜。 含硅膜在低基板温度下沉积时是可流动的。 将硅前体（例如甲硅烷基胺，高级硅烷或卤代硅烷）输送到衬底处理区域并在局部等离子体中激发。 第二等离子体蒸气或气体与硅衬底加工区域中的硅前体结合，并且可包括氨，氮（N 2），氩，氢（H 2）和/或氧（O 2）。 已经发现本文公开的与这些蒸汽/气体组合组合的设备结构在基板温度低于或约200℃时导致可流动的沉积，当使用较低功率激发局部等离子体时。

公开(公告)号：US20130298942A1

公开(公告)日：2013-11-14

申请号：US13791372

申请日：2013-03-08

Applicant: APPLIED MATERIALS, INC.

Inventor： He Ren ,  Nitin K. Ingle ,  Anchuan Wang

IPC: H01L21/02

CPC classification number: H01L21/0206 ,  H01J37/32357 ,  H01L21/76814

Abstract: Methods of removing residual polymer from vertical walls of a patterned dielectric layer are described. The methods involve the use of a gas phase etch to remove the residual polymer without substantially disturbing the patterned dielectric layer. The gas phase etch may be used on a patterned low-k dielectric layer and may maintain the low dielectric constant of the patterned dielectric layer. The gas phase etch may further avoid stressing the patterned low-k dielectric layer by avoiding the use of liquid etchants whose surface tension can upset delicate low-K features. The gas phase etch may further avoid the formation of solid etch by-products which cars also deform the delicate features.

Abstract translation: 描述了从图案化介电层的垂直壁去除残余聚合物的方法。 该方法涉及使用气相蚀刻来除去残留的聚合物，而基本上不干扰图案化的介电层。 气相蚀刻可以用在图案化的低k电介质层上，并且可以保持图案化介电层的低介电常数。 气相蚀刻可以进一步避免使用液面蚀刻剂来表现图案化的低k电介质层，其表面张力可能使精细的低K特征受损。 气相蚀刻可以进一步避免固体蚀刻副产物的形成，这些汽车也使精细特征变形。