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    Chemically and electrically stabilized polymer films
    32.
    发明授权
    Chemically and electrically stabilized polymer films 有权
    化学和电化学稳定的聚合物薄膜

    公开(公告)号：US07238626B2

    公开(公告)日：2007-07-03

    申请号：US11020422

    申请日：2004-12-21

    Applicant: Chung J. Lee ,  Atul Kumar

    Inventor： Chung J. Lee ,  Atul Kumar

    IPC: H01L21/31

    CPC classification number: B05D1/60 ,  B05D3/0254 ,  B29C71/02 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G61/025 ,  C08G2261/3424 ,  C08J5/18 ,  H01L21/0212 ,  H01L21/02271 ,  H01L21/31058 ,  H01L21/3127 ,  Y10T428/269 ,  Y10T428/3154 ,  Y10T428/31544 ,  Y10T428/31855

    Abstract: A method of stabilizing a poly(paraxylylene) dielectric thin film after forming the dielectric thin film via transport polymerization is disclosed, wherein the method includes annealing the dielectric thin film under at least one of a reductive atmosphere and a vacuum at a temperature above a reversible solid phase transition temperature of the dielectric film to convert the film from a lower temperature phase to a higher temperature phase, and cooling the dielectric thin film at a sufficient rate to a temperature below the solid phase transition temperature of the dielectric thin film to trap substantial portions of the film in the higher temperature phase.

    Abstract translation: 公开了一种在通过传输聚合形成电介质薄膜之后稳定聚（对二甲苯）电介质薄膜的方法，其中该方法包括在至少一种还原性气氛和真空中在高于可逆的温度下退火介电薄膜 电介质膜的固相转变温度，以将膜从较低温度相转变为较高温度相，并将电介质薄膜以足够的速率冷却至低于介电薄膜的固相转变温度的温度，以捕获相当大的 在较高温度阶段的薄膜部分。

    Method of encapsulating an organic light-emitting device
    33.
    发明申请
    Method of encapsulating an organic light-emitting device 失效
    封装有机发光装置的方法

    公开(公告)号：US20070105473A1

    公开(公告)日：2007-05-10

    申请号：US11271410

    申请日：2005-11-09

    Applicant: Chung Lee ,  Atul Kumar ,  Chieh Chen

    Inventor： Chung Lee ,  Atul Kumar ,  Chieh Chen

    IPC: H05B33/10 ,  H01L51/56

    CPC classification number: H01L51/5256 ,  Y10T428/1082 ,  Y10T428/2852

    Abstract: A method of encapsulating an organic light-emitting device is disclosed, wherein the device includes a light-emitting portion and an electrical contact portion, the method including forming a polymer layer over the light-emitting portion and the electrical contact portion of the device; forming a separation in the polymer layer between a portion of the polymer layer disposed over the light-emitting portion of the device and a portion of the polymer layer disposed over the electrical contact portion of the device; adhering a film removal structure to the portion of the polymer layer disposed over the electrical contact portion of the device; and removing the film removal structure, thereby causing the removal of the portion of the polymer layer disposed over the electrical contact portion of the device.

    Abstract translation: 公开了一种封装有机发光器件的方法，其中该器件包括发光部分和电接触部分，该方法包括在器件的发光部分和电接触部分上形成聚合物层; 在所述聚合物层的设置在所述器件的发光部分之上的部分和设置在所述器件的电接触部分之上的聚合物层的一部分之间的聚合物层中形成分离; 将膜去除结构粘附到设置在所述器件的电接触部分上方的聚合物层的部分; 并去除膜去除结构，从而导致去除设置在器件的电接触部分上的聚合物层的部分。

    Porous low k(<2.0) thin film derived from homo-transport-polymerization
    35.
    发明授权
    Porous low k(<2.0) thin film derived from homo-transport-polymerization 失效
    来自均匀转移聚合的多孔低k（<2.0）薄膜

    公开(公告)号：US07026052B2

    公开(公告)日：2006-04-11

    申请号：US10265281

    申请日：2002-10-04

    Applicant: Chung J. Lee ,  Atul Kumar

    Inventor： Chung J. Lee ,  Atul Kumar

    IPC: B32B3/00 ,  B32B27/00

    CPC classification number: B01J19/123 ,  B01J19/1887 ,  B01J2219/00153 ,  B01J2219/00159 ,  B01J2219/0879 ,  B05D1/007 ,  B05D1/60 ,  B05D3/0254 ,  B05D3/061 ,  B05D3/062 ,  B29C71/02 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G61/025 ,  C08G2261/3424 ,  C08J5/18 ,  C08J2365/04 ,  C08L65/00 ,  C08L65/04 ,  C23C16/452 ,  F28D17/005 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02203 ,  H01L21/02263 ,  H01L21/02337 ,  H01L21/02356 ,  H01L21/312 ,  H01L21/3127 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  Y10T428/31504 ,  Y10T428/3154 ,  Y10T428/31544 ,  Y10T428/31855 ,  H01L2924/00

    Abstract: The present invention pertains to a processing method to produce a porous polymer film that consists of sp2C—X and HC-sp3Cα—X bonds (wherein, X═H or F), and exhibits at least a crystal melting temperature, (“Tm”). The porous polymer films produced by this invention are useful for fabricating future integrated circuits (“IC's”). The method described herein is useful for preparing the porous polymer films by polymerizing reactive intermediates, formed from a first-precursor, with a low feed rate and at temperatures equal to or below a melting temperature of intermediate (T1m). Second-precursors that do not become reactive intermediates or have an incomplete conversion to reactive intermediates are also transported to a deposition chamber and become an inclusion of the deposited film. By utilizing a subsequent in-situ, post treatment process the inclusions in the deposited film can be removed to leave micro-pores in the resultant film. Annealing methods are used herein to stabilize the polymer films after reactive plasma etching. Furthermore, the present invention pertains to employment of reductive plasma conditions for patterning polymer films that consist of sp2C—X and HC-sp3Cα—X bonds (wherein, X═H, F).

    Abstract translation: 本发明涉及一种制备多孔聚合物膜的处理方法，该多孔聚合物膜由sp2C2和HC-sp3-α-X-X 键（其中，XH或F），并且表现出至少一种结晶熔融温度（“T”m“）。 本发明生产的多孔聚合物薄膜可用于制造未来的集成电路（“IC”）。 本文所述的方法可用于通过聚合由第一前体形成的反应性中间体以低进料速率和等于或低于中间体的熔融温度（T 1 SUP）的温度来制备多孔聚合物膜 > ）。 不成为反应性中间体或具有不完全转化为反应性中间体的第二前体也被输送到沉积室并变成沉积膜的包含物。 通过利用随后的原位后处理工艺，可以除去沉积膜中的夹杂物以在所得膜中留下微孔。 本文使用退火方法来稳定反应性等离子体蚀刻后的聚合物膜。 此外，本发明涉及用于构图聚合物薄膜的还原等离子体条件的使用，所述薄膜由sp2S2C和HC-Ⅲ' -X键（其中，XH，F）。

    Electromagnetically controlled tissue cavity distending system
    36.
    发明申请
    Electromagnetically controlled tissue cavity distending system 有权
    电磁控制组织腔膨胀系统

    公开(公告)号：US20060052666A1

    公开(公告)日：2006-03-09

    申请号：US11216170

    申请日：2005-09-01

    Applicant: Atul Kumar ,  Alka Kumar

    Inventor： Atul Kumar ,  Alka Kumar

    IPC: A61B1/12

    CPC classification number: A61M31/00 ,  A61B1/015 ,  A61M1/0058 ,  A61M3/0216 ,  A61M3/0258 ,  A61M29/00 ,  A61M2205/3334

    Abstract: A system to minimize fluid turbulence inside a tissue cavity during endoscopic procedures. A body tissue cavity of a subject is distended by continuous flow irrigation using a solenoid operated pump on the inflow side and a positive displacement pump, such as a peristaltic pump, on the outflow side, such that the amplitude of the pressure pulsations created by the outflow positive displacement pump inside the said tissue cavity is substantially dampened to almost negligible levels. The present invention also provides a method for accurately determining the rate of fluid loss into the subject's body system during any endoscopic procedure without utilizing any deficit weight or fluid volume calculation, the same being accomplished by using two fluid flow rate sensors. The present invention also provides a system of creating and maintaining any desired pressure in a body tissue cavity for any desired cavity outflow rate.

    Abstract translation: 一种在内窥镜手术期间使组织腔内的流体湍流最小化的系统。 受试者的身体组织腔通过流入侧的电磁操作泵和流出侧上的诸如蠕动泵的容积式泵，通过连续流动灌流来扩张，使得由流体侧产生的压力脉动的振幅 所述组织腔内的流出正位移泵基本上被抑制到几乎可忽略的水平。 本发明还提供了一种用于在任何内窥镜程序中精确地确定进入受试者身体系统的流体速率的方法，而不使用任何缺陷重量或流体体积计算，这通过使用两个流体流速传感器来实现。 本发明还提供了一种在任何期望的腔体流出速率下，在身体组织腔中产生和维持任何所需压力的系统。

    Composite polymer dielectric film
    38.
    发明授权
    Composite polymer dielectric film 有权
    复合聚合物电介质膜

    公开(公告)号：US06962871B2

    公开(公告)日：2005-11-08

    申请号：US10816205

    申请日：2004-03-31

    Applicant: Chung J. Lee ,  Atul Kumar

    Inventor： Chung J. Lee ,  Atul Kumar

    IPC: H01L21/4763 ,  H01L23/58

    CPC classification number: H01L21/3122 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02263 ,  H01L21/02348 ,  H01L21/3127

    Abstract: An integrated circuit including a composite polymer dielectric layer formed on a substrate is disclosed, wherein the composite polymer dielectric layer includes a first silane-containing layer formed on the substrate, wherein the first silane-containing layer is formed at least partially from an organosilane material, a polymer dielectric layer formed on the first silane-containing layer, and a second silane-containing layer formed on the polymer dielectric layer. In some embodiments, the first silane-containing layer and second silane-containing layer may be formed from organosilane materials having at least one unsaturated bond capable of free radical polymerization. Systems and methods for making the disclosed integrated circuits are also provided.

    Abstract translation: 公开了一种集成电路，其包括在基板上形成的复合聚合物电介质层，其中所述复合聚合物电介质层包括在所述基板上形成的第一含硅烷层，其中所述第一含硅烷层至少部分地由有机硅烷材料形成 ，形成在第一含硅烷层上的聚合物电介质层和形成在聚合物电介质层上的第二含硅烷层。 在一些实施方案中，第一含硅烷层和第二含硅烷层可以由具有至少一个能够进行自由基聚合的不饱和键的有机硅烷材料形成。 还提供了用于制造所公开的集成电路的系统和方法。

    COMPOSITE POLYMER DIELECTRIC FILM
    40.
    发明申请
    COMPOSITE POLYMER DIELECTRIC FILM 有权
    复合聚合物电介质膜

    公开(公告)号：US20050218481A1

    公开(公告)日：2005-10-06

    申请号：US10816205

    申请日：2004-03-31

    Applicant: Chung Lee ,  Atul Kumar

    Inventor： Chung Lee ,  Atul Kumar

    IPC: H01L21/4763 ,  H01L23/58

    CPC classification number: H01L21/3122 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02263 ,  H01L21/02348 ,  H01L21/3127

    Abstract: An integrated circuit including a composite polymer dielectric layer formed on a substrate is disclosed, wherein the composite polymer dielectric layer includes a first silane-containing layer formed on the substrate, wherein the first silane-containing layer is formed at least partially from an organosilane material, a polymer dielectric layer formed on the first silane-containing layer, and a second silane-containing layer formed on the polymer dielectric layer. In some embodiments, the first silane-containing layer and second silane-containing layer may be formed from organosilane materials having at least one unsaturated bond capable of free radical polymerization. Systems and methods for making the disclosed integrated circuits are also provided.

    Abstract translation: 公开了一种集成电路，其包括在基板上形成的复合聚合物电介质层，其中所述复合聚合物电介质层包括在所述基板上形成的第一含硅烷层，其中所述第一含硅烷层至少部分地由有机硅烷材料形成 ，形成在第一含硅烷层上的聚合物电介质层和形成在聚合物电介质层上的第二含硅烷层。 在一些实施方案中，第一含硅烷层和第二含硅烷层可以由具有至少一个能够进行自由基聚合的不饱和键的有机硅烷材料形成。 还提供了用于制造所公开的集成电路的系统和方法。

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