公开(公告)号：US20070161256A1

公开(公告)日：2007-07-12

申请号：US11329560

申请日：2006-01-11

申请人： Stephen Gates ,  Alfred Grill ,  Robert Miller ,  Deborah Neumayer ,  Son Nguyen

发明人： Stephen Gates ,  Alfred Grill ,  Robert Miller ,  Deborah Neumayer ,  Son Nguyen

IPC分类号： H01L21/31

CPC分类号： H01L21/31695 ,  B05D1/60 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/02351

摘要： A method of fabricating a dielectric material that has an ultra low dielectric constant (or ultra low k) using at least one organosilicon precursor is described. The organosilicon precursor employed in the present invention includes a molecule containing both an Si—O structure and a sacrificial organic group, as a leaving group. The use of an organosilicon precursor containing a molecular scale sacrificial leaving group enables control of the pore size at the nanometer scale, control of the compositional and structural uniformity and simplifies the manufacturing process. Moreover, fabrication of a dielectric film from a single precursor enables better control of the final porosity in the film and a narrower pore size distribution resulting in better mechanical properties at the same value of dielectric constant.

摘要翻译： 描述了使用至少一种有机硅前体制造具有超低介电常数（或超低k）的介电材料的方法。 本发明中使用的有机硅前体包括含有Si-O结构和牺牲有机基团的分子作为离去基团。 使用含有分子尺度牺牲离去基团的有机硅前体使得能够控制纳米尺度的孔径，控制组成和结构均匀性并简化制造过程。 此外，从单一前体制造电介质膜能够更好地控制膜中的最终孔隙率和较窄的孔径分布，导致在相同的介电常数值下更好的机械性能。

公开(公告)号：US20060154086A1

公开(公告)日：2006-07-13

申请号：US11034480

申请日：2005-01-13

申请人： Nicholas Fuller ,  Stephen Gates ,  Timothy Dalton

发明人： Nicholas Fuller ,  Stephen Gates ,  Timothy Dalton

IPC分类号： B32B17/06 ,  B32B9/00 ,  H01L21/302

CPC分类号： H01L21/0331 ,  H01L21/76811 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/12576 ,  Y10T428/12611 ,  Y10T428/31667 ,  H01L2924/00

摘要： Interconnect structures possessing an organosilicate glass based material for 90 nm and beyond BEOL technologies in which a multilayer hardmask using a line-first approach are described. The interconnect structure of the invention achieves respective improved device/interconnect performance and affords a substantial dual damascene process window owing to the non-exposure of the OSG material to resist removal plasmas and because of the alternating inorganic/organic multilayer hardmask stack. The latter feature implies that for every inorganic layer that is being etched during a specific etch step, the corresponding pattern transfer layer in the field is organic and vice-versa.

摘要翻译： 具有用于90nm以上的有机硅酸盐玻璃基材料的互连结构，其中描述了使用线路优先方法的多层硬掩模的BEOL技术。 本发明的互连结构实现了相应的改进的器件/互连性能，并且由于不暴露OSG材料以抵抗去除等离子体以及由于交替的无机/有机多层硬掩模堆叠而提供了实质的双镶嵌工艺窗口。 后一特征意味着对于在特定蚀刻步骤期间被蚀刻的每个无机层，该领域中相应的图案转移层是有机的，反之亦然。

公开(公告)号：US20050216843A1

公开(公告)日：2005-09-29

申请号：US10410103

申请日：2003-04-09

申请人： Michael Masters ,  Alex Louie ,  Lily Tsong-Chou Knowles ,  Stephen Gates

发明人： Michael Masters ,  Alex Louie ,  Lily Tsong-Chou Knowles ,  Stephen Gates

IPC分类号： G08C17/00 ,  H04B1/20 ,  G06F3/00 ,  G08C19/12 ,  G09G5/00 ,  G11B27/00 ,  H04N5/44

CPC分类号： H04B1/202 ,  G08C17/00 ,  G08C2201/50 ,  G08C2201/92

摘要： A system and method for setting up a user interface of a remote control. The remote control displays a logical group of function keys the activation of which will cause the remote control to transmit a command to a target device and a plurality of indicators representative of devices. A user input functions to select one of the plurality of indicators and the device represented by the selected indicator is assigned as the target device for the logical group of function keys.

摘要翻译： 一种用于设置遥控器的用户界面的系统和方法。 遥控器显示逻辑组的功能键，其激活将使遥控器向目标设备发送命令，以及代表设备的多个指示器。 用户输入功能用于选择多个指示符之一，并且将由所选择的指示符表示的设备分配为用于逻辑组功能键的目标设备。

公开(公告)号：US20050116930A1

公开(公告)日：2005-06-02

申请号：US10702757

申请日：2003-11-06

申请人： Stephen Gates

发明人： Stephen Gates

IPC分类号： G08C20060101 ,  G08C17/02 ,  G08C23/04 ,  G09G5/00 ,  G09G5/08

CPC分类号： G08C17/02 ,  G08C23/04

摘要： An EL display is provided with EL segments which are individually illuminable and which include one or more complete function key images and/or fragments of complete function key images. One or more of the EL segments may thus be illuminated to present multiple, different user interfaces each having one or more complete function key images. A complete function key image presented as part of a user interface may be a complete key image that was included as part of an illuminated EL segment or may be formed by a combination of key image fragments included as part of multiple illuminated EL segments.

摘要翻译： EL显示器具有可分别照明并且包括一个或多个完整功能键图像和/或完整功能键图像的片段的EL段。 EL片段中的一个或多个可因此被照亮以呈现多个不同的用户界面，每个用户界面具有一个或多个完整的功能键图像。 作为用户界面的一部分呈现的完整的功能键图像可以是作为照亮的EL段的一部分被包括的完整的键图像，或者可以由作为多个照明的EL段的一部分包括的关键图像片段的组合形成。

公开(公告)号：US20070237970A1

公开(公告)日：2007-10-11

申请号：US11763829

申请日：2007-06-15

申请人： Stephan Cohen ,  Stephen Gates ,  Alfred Grill ,  Vishnubhai Patel

发明人： Stephan Cohen ,  Stephen Gates ,  Alfred Grill ,  Vishnubhai Patel

IPC分类号： C23C16/00 ,  B32B9/04

CPC分类号： H01L21/02167 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/12535 ,  Y10T428/24917 ,  Y10T428/249953 ,  H01L2924/00

摘要： A diffusion barrier useful in semiconductor electronic devices, such as multi-level interconnect wiring structures, is provided. The diffusion barrier is characterized as having a low-dielectric constant of less than 3.5, preferably less than 3.0, as well as being capable of substantially preventing Cu and/or oxygen from diffusing into the active device areas of the electronic device. Since the diffusion barrier has a low-dielectric constant, the diffusion barrier has only a minor effect on the effective dielectric constant of the interconnect structure. The low-k diffusion battier includes atoms of Si, C, H and N. The N atoms are non-uniformly distributed within the low-k diffusion barrier. Optionally, the low-k diffusion barrier may include atoms of Ge, O, halogens such as F or any combination thereof.

摘要翻译： 提供了可用于诸如多层互连布线结构的半导体电子器件中的扩散屏障。 扩散阻挡层的特征在于具有小于3.5，优选小于3.0的低介电常数，并且能够基本上防止Cu和/或氧扩散到电子器件的有源器件区域。 由于扩散阻挡层具有低介电常数，所以扩散阻挡层对互连结构的有效介电常数只有较小的影响。 低k扩散阻挡层包括Si，C，H和N的原子.N原子在低k扩散势垒内不均匀分布。 任选地，低k扩散阻挡层可以包括Ge，O的原子，诸如F的卤素或其任何组合。

公开(公告)号：US20070196639A1

公开(公告)日：2007-08-23

申请号：US11190360

申请日：2005-07-27

申请人： Stephen Gates ,  Alfred Grill ,  Deborah Neumayer ,  Son Nguyen ,  Vishnubhai Patel

发明人： Stephen Gates ,  Alfred Grill ,  Deborah Neumayer ,  Son Nguyen ,  Vishnubhai Patel

IPC分类号： B32B3/00

CPC分类号： H01B19/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/7682 ,  H01L23/5329 ,  H01L2924/0002 ,  Y10T428/249967 ,  Y10T428/24997 ,  Y10T428/249978 ,  Y10T428/249979 ,  H01L2924/00

摘要： The present invention provides a porous composite material in which substantially all of the pores within the composite material are small having a diameter of about 5 nm or less and with a narrow PSD. The inventive composite material is also characterized by the substantial absence of the broad distribution of larger sized pores which is prevalent in prior art porous composite materials. The porous composite material includes a first solid phase having a first characteristic dimension and a second solid phase comprised of pores having a second characteristic dimension, wherein the characteristic dimensions of at least one of said phases is controlled to a value of about 5 nm or less.

摘要翻译： 本发明提供一种多孔复合材料，其中复合材料中的基本上所有的孔都具有小直径约5nm或更小并具有窄PSD的孔。 本发明的复合材料的特征还在于现有技术的多孔复合材料中普遍存在的较大尺寸的孔的基本上不存在。 多孔复合材料包括具有第一特征尺寸的第一固相和由具有第二特征尺寸的孔组成的第二固相，其中至少一个所述相的特征尺寸被控制为约5nm或更小的值 。

公开(公告)号：US20060110937A1

公开(公告)日：2006-05-25

申请号：US11324479

申请日：2006-01-03

申请人： Stephen Gates ,  Alfred Grill ,  David Medeiros ,  Deborah Newmayer ,  Son Nguyen ,  Vishnubhai Patel ,  Xinhui Wang

发明人： Stephen Gates ,  Alfred Grill ,  David Medeiros ,  Deborah Newmayer ,  Son Nguyen ,  Vishnubhai Patel ,  Xinhui Wang

IPC分类号： H01L21/31

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/31695

摘要： A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of a thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, silane derivatives, for instance, diethoxymethylsilane (DEMS) and organic molecules, for instance, bicycloheptadiene and cyclopentene oxide.

公开(公告)号：US20050194619A1

公开(公告)日：2005-09-08

申请号：US11040778

申请日：2005-01-21

申请人： Daniel Edelstein ,  Stephen Gates ,  Alfred Grill ,  Michael Lane ,  Robert Miller ,  Deborah Neumayer ,  Son Nguyen

发明人： Daniel Edelstein ,  Stephen Gates ,  Alfred Grill ,  Michael Lane ,  Robert Miller ,  Deborah Neumayer ,  Son Nguyen

IPC分类号： H01L27/148 ,  H01L31/103

CPC分类号： H01L31/103 ,  Y10T428/31663

摘要： A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH2]n— where n is greater than or equal to 1, HC═CH, C═CH2, C═C or a [S]n linkage, where n is a defined above.

摘要翻译： 提供了一种用于包括互连和感测结构的电子结构中具有增强的内聚强度的低k介电材料，其包括Si，C，O和H的原子，其中C原子的一部分键合为Si-CH _{3个官能团，另外一部分C原子键合为Si-R-Si，其中R是苯基， - [CH 2 N] - 其中n大于或等于1，HC-CH，C-CH 2，CC或[S] N n连接，其中n定义如上。}

公开(公告)号：US20050184397A1

公开(公告)日：2005-08-25

申请号：US10780554

申请日：2004-02-19

申请人： Stephen Gates ,  Son Nguyen

发明人： Stephen Gates ,  Son Nguyen

IPC分类号： H01L21/768 ,  H01L21/4763 ,  H01L23/48 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L21/76844 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76826 ,  H01L21/76831 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T29/49128 ,  Y10T29/49165 ,  H01L2924/00

摘要： An improved back end of the line (BEOL) interconnect structure comprising an ultralow k (ULK) dielectric is provided. The structure may be of the single or dual damascene type and comprises a dense thin dielectric layer (TDL) between a metal barrier layer and the ULK dielectric. Disclosed are also methods of fabrication of BEOL interconnect structures, including (i) methods in which a dense TDL is provided on etched opening of a ULK dielectric and (ii) methods in which a ULK dielectric is placed in a process chamber on a cold chuck, a sealing agent is added to the process chamber, and an activation step is performed.

摘要翻译： 提供包括超低k（ULK）电介质的线（BEOL）互连结构的改进的后端。 该结构可以是单镶嵌型或双镶嵌型，并且在金属阻挡层和ULK电介质之间包括致密的薄介电层（TDL）。 公开了制造BEOL互连结构的方法，包括（i）其中在ULK电介质的蚀刻开口上提供致密TDL的方法，以及（ii）将ULK电介质放置在冷卡盘上的处理室中的方法 ，在处理室中加入密封剂，进行活化工序。

公开(公告)号：US20050152073A1

公开(公告)日：2005-07-14

申请号：US11030787

申请日：2005-01-07

申请人： Charles Black ,  Stephen Gates ,  Christopher Murray ,  Robert Sandstrom

发明人： Charles Black ,  Stephen Gates ,  Christopher Murray ,  Robert Sandstrom

IPC分类号： G01R33/09 ,  G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  G01R33/093 ,  Y10T29/49032 ,  Y10T29/49069 ,  Y10T29/49155 ,  Y10T428/25 ,  Y10T428/265

摘要： A magnetic-field sensor device comprises at least two electrodes; an insulating layer separating the at least two electrodes; at least one layer of chemically-synthesized magnetic nanoparticles disposed at or above a level with the insulating layer, and disposed between the at least two electrodes; and an organic spacer surrounding each of the chemically-synthesized magnetic nanoparticles. A deviation between diameters of different ones of the nanoparticles is less than 15%. Moreover, the chemically-synthesized magnetic nanoparticles range in size between 2 nm and 20 nm in diameter.

摘要翻译： 磁场传感器装置包括至少两个电极; 分离所述至少两个电极的绝缘层; 至少一层化学合成的磁性纳米颗粒设置在与绝缘层的水平面上或之上，并且设置在至少两个电极之间; 以及围绕每个化学合成的磁性纳米颗粒的有机间隔物。 不同纳米颗粒的直径之间的偏差小于15％。 此外，化学合成的磁性纳米粒子的尺寸范围在2nm和20nm之间。