公开(公告)号：US20160252819A1

公开(公告)日：2016-09-01

申请号：US15152725

申请日：2016-05-12

Applicant: FUJIFILM Corporation

Inventor： Yasuo SUGISHIMA ,  Tetsuya KAMIMURA ,  Atsushi MIZUTANI

IPC: G03F7/42 ,  H01L21/266 ,  H01L21/285 ,  H01L29/78 ,  H01L29/66 ,  H01L29/08 ,  H01L29/161 ,  H01L29/165 ,  H01L21/8238 ,  H01L21/324

CPC classification number: G03F7/425 ,  G03F7/426 ,  H01L21/266 ,  H01L21/28518 ,  H01L21/31111 ,  H01L21/324 ,  H01L21/823814 ,  H01L21/823857 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/165 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/7848

Abstract: Provided is a stripper which removes a modified resist on a semiconductor substrate and contains an alcohol compound, a quaternary ammonium hydroxide compound, and 4% by mass or greater of water.

Abstract translation: 提供一种汽提器，其移除半导体衬底上的改性抗蚀剂并含有醇化合物，氢氧化季铵化合物和4质量％以上的水。

公开(公告)号：US20160118264A1

公开(公告)日：2016-04-28

申请号：US14927700

申请日：2014-05-01

Applicant: FUJIFILM CORPORATION

Inventor： Tetsuya KAMIMURA ,  Akiko KOYAMA ,  Satomi TAKAHASHI ,  Atsushi MIZUTANI ,  Yasuo SUGISHIMA

IPC: H01L21/306 ,  H01L21/324 ,  H01L21/02

Abstract: There is provided an etching method of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing at least one specific metal element selected from nickel platinum (NiPt), titanium (Ti), nickel (Ni), and cobalt (Co), the method including: bringing an etching solution which contains an alkali compound into contact with the second layer and selectively removing the second layer.

Abstract translation: 提供了一种半导体衬底的蚀刻方法，其包括含有锗（Ge）的第一层和包含选自镍铂（NiPt），钛（Ti），镍（Ni））和至少一种特定金属元素的第二层 钴（Co），该方法包括：使包含碱性化合物的蚀刻溶液与第二层接触并选择性地除去第二层。

公开(公告)号：US20150087156A1

公开(公告)日：2015-03-26

申请号：US14558838

申请日：2014-12-03

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Tadashi INABA ,  Naotsugu MURO ,  Yoshinori NISHIWAKI

IPC: H01L21/306 ,  C09K13/00

CPC classification number: H01L21/30604 ,  C09K13/00 ,  C09K13/02 ,  C09K13/06 ,  C23F1/00 ,  C23F1/02 ,  C23F1/14 ,  C23F1/26 ,  C23F1/38 ,  C23F1/44 ,  C23G1/106 ,  C23G1/205 ,  H01L21/02063 ,  H01L21/31144 ,  H01L21/32134 ,  H01L21/6704

Abstract: A method of etching a semiconductor substrate, having the steps of: preparing an etching liquid by mixing a first liquid with a second liquid to be in the range of pH from 8.5 to 14, the first liquid containing a basic compound, the second liquid containing an oxidizing agent; and then applying the etching liquid to a semiconductor substrate on a timely basis for etching a Ti-containing layer in or on the semiconductor substrate.

Abstract translation: 一种蚀刻半导体衬底的方法，具有以下步骤：通过将第一液体与第二液体混合在pH为8.5至14的范围内来制备蚀刻液体，所述第一液体含有碱性化合物，所述第二液体含有 氧化剂; 然后及时将蚀刻液施加到半导体衬底上，以蚀刻半导体衬底中或其上的含Ti层。

公开(公告)号：US20250028249A1

公开(公告)日：2025-01-23

申请号：US18893990

申请日：2024-09-24

Applicant: FUJIFILM Corporation

Inventor： Akihiko OHTSU ,  Masahiro YOSHIDOME ,  Tetsuya KAMIMURA ,  Ryo SAITO

IPC: G03F7/32 ,  G03F7/42

Abstract: An object of the present invention is to provide a chemical solution that, in the case of being used in a step of bringing a contact-target member and the chemical solution into contact with each other, is less likely to cause a predetermined defect in the contact-target member. A chemical solution according to the present invention includes an organic solvent and a metal-containing particle including a metal element selected from the group consisting of Fe, Ni, and Zn, wherein an I value determined by a method X is 0.010 to 10.000, method X: the chemical solution is applied onto a substrate to prepare a subject; a surface of the subject is analyzed by being scanned with laser using laser-ablation-inductively coupled plasma-mass spectrometry, to obtain charts for the metal elements in which an abscissa axis indicates laser scanning time and an ordinate axis indicates ion detection intensity; the ion detection intensity of the charts is accumulated for the scanning time to determine accumulated ion detection intensities of the metal elements; the accumulated ion detection intensities of the metal elements are added up to determine a total accumulated ion detection intensity; and the total accumulated ion detection intensity is divided by a laser scanning area to obtain an I value in units of counts/mm2.

公开(公告)号：US20240368428A1

公开(公告)日：2024-11-07

申请号：US18778757

申请日：2024-07-19

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA

IPC: C09G1/02 ,  B24B37/04 ,  C09K3/14 ,  H01L21/306 ,  H01L21/3105

Abstract: An object of the present invention is to provide a polishing liquid that has a high polishing rate and exhibits a small variation in polishing rate in a case where polishing is carried out using the polishing liquid. The polishing liquid of the present invention is a polishing liquid for use in chemical mechanical polishing, containing colloidal silica, an organic acid having at least a phosphonic acid group or a salt thereof in a molecular structure, hypophosphorous acid, and water.

公开(公告)号：US20240295822A1

公开(公告)日：2024-09-05

申请号：US18642711

申请日：2024-04-22

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Tetsuya SHIMIZU ,  Satoru MURAYAMA

IPC: G03F7/32 ,  G03F7/00 ,  G03F7/027 ,  G03F7/039 ,  G03F7/40 ,  H01L21/02

CPC classification number: G03F7/32 ,  G03F7/027 ,  G03F7/0397 ,  G03F7/322 ,  G03F7/40 ,  G03F7/70925 ,  H01L21/0206

Abstract: A pattern forming method including forming a film using an actinic ray-sensitive or radiation-sensitive resin composition; exposing the formed film; and treating the exposed film using a treatment liquid for manufacturing a semiconductor. The treatment liquid for manufacturing a semiconductor includes a quaternary ammonium compound represented by the following Formula (N); at least one additive selected from the group consisting of an anionic surfactant, a nonionic surfactant, a cationic surfactant, and a chelating agent; and water. The treatment liquid for manufacturing a semiconductor includes one kind or two or more kinds of metal atoms selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn. A total mass of the metal atoms is 1 mass ppt to 1 mass ppm with respect to the sum of a total mass of the additive and the total mass of the metal atoms.

公开(公告)号：US20230350290A1

公开(公告)日：2023-11-02

申请号：US18220825

申请日：2023-07-12

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Satomi TAKAHASHI

IPC: G03F7/004 ,  B65D85/00 ,  G03F7/16 ,  G03F7/26 ,  G03F7/20 ,  H01L21/027 ,  G03F7/039 ,  G03F7/00 ,  G03F7/075

CPC classification number: G03F7/0048 ,  B65D85/70 ,  G03F7/161 ,  G03F7/26 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/162 ,  H01L21/027 ,  G03F7/16 ,  G03F7/0392 ,  G03F7/0012 ,  G03F7/0397 ,  G03F7/0758

Abstract: A pattern forming method includes a pre-wetting step of coating a substrate with a chemical liquid so as to obtain a pre-wetted substrate, a resist film forming step of forming a resist film on the pre-wetted substrate by using an actinic ray-sensitive or radiation-sensitive resin composition, an exposure step of exposing the resist film, and a development step of developing the exposed resist film by using a developer. The chemical liquid contains a mixture of two or more kinds of organic solvents and an impurity metal containing one kind of element selected from the group consisting of Fe, Cr, Ni, and Pb, in which a vapor pressure of the mixture is 50 to 1,420 Pa at 25° C.

公开(公告)号：US20230135117A1

公开(公告)日：2023-05-04

申请号：US18147228

申请日：2022-12-28

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  G03F7/075 ,  G03F7/00 ,  H01L21/027 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38

Abstract: An object of the present invention is to provide a solution which contains an organic solvent as a main component (content: equal to or greater than 98% by mass) and has an excellent defect inhibition ability.
Another object of the present invention is to provide a solution storage body storing the solution, an actinic ray-sensitive or radiation-sensitive resin composition containing the solution, and a pattern forming method and a manufacturing method of a semiconductor device using the solution.
The solution of the present invention is a solution containing at least one kind of organic solvent having a boiling point lower than 200° C. and an organic impurity having a boiling point equal to or higher than 250° C., in which a content of the organic solvent with respect to a total mass of the solution is equal to or greater than 98% by mass, and a content of the organic impurity with respect to the total mass of the solution is equal to or greater than 0.1 mass ppm and less than 100 mass ppm.

公开(公告)号：US20230065213A1

公开(公告)日：2023-03-02

申请号：US18046701

申请日：2022-10-14

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA

IPC: C11D1/65 ,  C11D11/00 ,  C11D3/00 ,  C11D3/20 ,  C11D3/30 ,  C11D3/33 ,  C11D3/04 ,  C11D3/36 ,  C11D3/22 ,  C11D3/37 ,  C11D3/28 ,  B24B37/34 ,  H01L21/02

Abstract: An object of the present invention is to provide a cleaning liquid for a semiconductor substrate, which has excellent corrosion prevention performance for a metal-containing layer. In addition, another object of the present invention is to provide a method for cleaning a semiconductor substrate.
The cleaning liquid of an embodiment of the present invention is a cleaning liquid for a semiconductor substrate that has been subjected to a chemical mechanical polishing treatment, in which the cleaning liquid includes a component A having two or more onium structures in a molecule, and water, and has a pH of 7.0 to 11.8 at 25° C.

公开(公告)号：US20220403300A1

公开(公告)日：2022-12-22

申请号：US17849027

申请日：2022-06-24

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA

IPC: C11D11/00 ,  C11D3/30 ,  C11D3/00

Abstract: There is provided a cleaning liquid excellent in cleaning performance and corrosion prevention performance in application as a cleaning liquid for semiconductor substrates that contain cobalt-containing matter and that have undergone a chemical mechanical polishing process. There is also provided a method of cleaning a semiconductor substrate having undergone a chemical mechanical polishing process. The cleaning liquid is for a semiconductor substrate having undergone a chemical mechanical polishing process, and contains an amine compound Y0 that is at least one selected from the group consisting of: a compound Y1 represented by a general formula (Y1); and a compound Y0 having a 1,4-butanediamine skeleton. The cleaning liquid has a pH of 8.0 to 11.0.