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152 条记录 (耗时 0.033 秒)

    Oxide-like seasoning for dielectric low k films
    32.
    发明授权
    Oxide-like seasoning for dielectric low k films 有权
    电介质低k薄膜的氧化物调味料

    公开(公告)号：US07115508B2

    公开(公告)日：2006-10-03

    申请号：US10816606

    申请日：2004-04-02

    申请人： Sohyun Park ,  Wen H. Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

    发明人： Sohyun Park ,  Wen H. Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

    IPC分类号： H01L21/44 ,  H01L21/31

    CPC分类号： H01L21/02126 ,  C23C16/4404 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/76829 ,  Y10S438/913

    摘要： A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more oxidizing gases and depositing a low dielectric constant layer on a substrate in the chamber from a second mixture comprising one or more organosilicon compounds and one or more oxidizing gases, wherein a ratio of the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the first mixture is lower than the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the second mixture.

    摘要翻译： 提供了调节室的方法和在室中的基板上沉积低介电常数层。 在一个方面，所述方法包括用包含一种或多种有机硅化合物和一种或多种氧化性气体的第一混合物来调节室，并且从室内的衬底上沉积低介电常数层，所述第二混合物包含一种或多种有机硅化合物和 一种或多种氧化性气体，其中有机硅化合物的总流量与第一混合物中的氧化气体的总流量的比率低于有机硅化合物的总流量与氧化物的总流量的比率 第二混合物中的气体。

    HDP-CVD film for uppercladding application in optical waveguides
    34.
    发明申请
    HDP-CVD film for uppercladding application in optical waveguides 审中-公开
    用于在光波导中应用的HDP-CVD膜

    公开(公告)号：US20050089293A1

    公开(公告)日：2005-04-28

    申请号：US10997715

    申请日：2004-11-24

    申请人： Hichem M'Saad

    发明人： Hichem M'Saad

    IPC分类号： C23C16/40 ,  G02B6/12 ,  G02B6/132 ,  G02B6/10

    CPC分类号： C23C16/401 ,  G02B6/132 ,  G02B2006/12097

    摘要： An optical waveguide is formed on a substrate by first depositing an undercladding layer over the substrate. At least one core is formed over the undercladding layer. An uppercladding layer is then formed over the cores with a high-density plasma process. Deposition of the uppercladding layer may proceed by flowing an oxygen-containing gas, such as O2, a silicon-containing gas, such as SiH4, and a fluorine-containing gas, such as SiF4, into a process chamber to produce a gaseous mixture. A high-density plasma, i.e. having a density of at least 1011 ions/cm3, is generated from the gaseous mixture and then used to deposit a fluorinated silicate glass layer.

    摘要翻译： 通过首先在衬底上沉积下封层，在衬底上形成光波导。 在下封层上形成至少一个芯。 然后用高密度等离子体工艺在芯上形成上层。 上层的沉积可以通过使诸如SO 2的含氧气体，例如SiH 4 O 3等含氧气体和含氟气体 气体，例如SiF 4 N，进入处理室以产生气态混合物。 从气体混合物产生高密度等离子体，即具有至少10 11 / cm 3的密度，然后用于沉积氟化硅酸盐玻璃层 。

    Barrier layer deposition using HDP-CVD
    35.
    发明授权
    Barrier layer deposition using HDP-CVD 有权
    使用HDP-CVD进行阻挡层沉积

    公开(公告)号：US06399489B1

    公开(公告)日：2002-06-04

    申请号：US09431411

    申请日：1999-11-01

    申请人： Hichem M'Saad ,  Seon Mee Cho ,  Dana Tribula

    发明人： Hichem M'Saad ,  Seon Mee Cho ,  Dana Tribula

    IPC分类号： C23C16/50 ,  C23C16/32 ,  H01L21/205 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L21/44

    CPC分类号： C23C16/325 ,  H01L21/314 ,  H01L21/3146 ,  Y10S438/931

    摘要： A method of depositing a film, such as a barrier layer, on a substrate using a gaseous mixture including a hydrocarbon-containing gas and a silicon-containing gas. Suitable hydrocarbon-containing gases include alkanes such as methane (CH4), ethane (C2H6), butane (C3H8), propane (C4H10), etc. Suitable silicon-containing gases include silanes such as monosilane (SiH4). The method generally comprises providing a suitable gaseous mixture to the chamber, generating a plasma from the gaseous mixture, and depositing a film onto the substrate using the plasma. In a preferred embodiment, the film is deposited in a high-density plasma chemical vapor deposition (HDP-CVD) system. The gaseous mixture typically includes a silicon containing gas, such as an alkane, and a hydrocarbon containing gas, such as a silane. Embodiments of the method of the present invention can integrated stack structures having overall dielectric constant of about 4.0 or less. Such a structure may include a barrier layer having a dielectric constant of 4.5 or less.

    摘要翻译： 使用包含含烃气体和含硅气体的气体混合物在衬底上沉积诸如阻挡层的膜的方法。 合适的含烃气体包括烷烃如甲烷（CH4），乙烷（C2H6），丁烷（C3H8），丙烷（C​​4H10）等。合适的含硅气体包括硅烷如硅烷（SiH 4）。 该方法通常包括向腔室提供合适的气体混合物，从气体混合物产生等离子体，以及使用等离子体将膜沉积到衬底上。 在优选的实施方案中，膜以高密度等离子体化学气相沉积（HDP-CVD）系统沉积。 气态混合物通常包括含硅气体，例如烷烃，和含烃气体，例如硅烷。 本发明方法的实施方案可以具有总体介电常数为约4.0或更小的堆叠结构。 这种结构可以包括介电常数为4.5或更小的阻挡层。

    Method of depositing boron nitride and boron nitride-derived materials
    38.
    发明授权
    Method of depositing boron nitride and boron nitride-derived materials 有权
    沉积氮化硼和氮化硼衍生材料的方法

    公开(公告)号：US08084105B2

    公开(公告)日：2011-12-27

    申请号：US11765257

    申请日：2007-06-19

    申请人： Jeong-Uk Huh ,  Mihaela Balseanu ,  Li-Qun Xia ,  Victor T. Nguyen ,  Derek R. Witty ,  Hichem M'Saad

    发明人： Jeong-Uk Huh ,  Mihaela Balseanu ,  Li-Qun Xia ,  Victor T. Nguyen ,  Derek R. Witty ,  Hichem M'Saad

    IPC分类号： H05H1/24

    CPC分类号： C23C16/342 ,  C23C16/45523

    摘要： Methods for forming boron-containing films are provided. The methods include introducing a boron-containing precursor and a nitrogen or oxygen-containing precursor into a chamber and forming a boron nitride or boron oxide film on a substrate in the chamber. In one aspect, the method includes depositing a boron-containing film and then exposing the boron-containing film to the nitrogen-containing or oxygen-containing precursor to incorporate nitrogen or oxygen into the film. The deposition of the boron-containing film and exposure of the film to the precursor may be performed for multiple cycles to obtain a desired thickness of the film. In another aspect, the method includes reacting the boron-containing precursor and the nitrogen-containing or oxygen-containing precursor to chemically vapor deposit the boron nitride or boron oxide film.

    摘要翻译： 提供了形成含硼膜的方法。 所述方法包括将含硼前体和含氮或含氧前体引入室中，并在室中的基底上形成氮化硼或氧化硼膜。 一方面，该方法包括沉积含硼膜，然后将含硼膜暴露于含氮或含氧前体以将氮或氧引入膜中。 含硼膜的沉积和膜暴露于前体可以进行多个循环以获得所需的膜厚度。 另一方面，该方法包括使含硼前体和含氮或含氧前体反应以化学气相沉积氮化硼或氧化硼膜。

    Method of depositing an amorphous carbon film for etch hardmask application
    40.
    发明授权
    Method of depositing an amorphous carbon film for etch hardmask application 有权
    沉积用于蚀刻硬掩模应用的无定形碳膜的方法

    公开(公告)号：US07638440B2

    公开(公告)日：2009-12-29

    申请号：US10799146

    申请日：2004-03-12

    申请人： Yuxiang May Wang ,  Sudha S. R. Rathi ,  Michael Chiu Kwan ,  Hichem M'Saad

    发明人： Yuxiang May Wang ,  Sudha S. R. Rathi ,  Michael Chiu Kwan ,  Hichem M'Saad

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： G03F7/094 ,  G03F7/091 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/7684

    摘要： Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including forming a dielectric material layer on a surface of the substrate, depositing an amorphous carbon layer on the dielectric material layer by introducing a processing gas comprises one or more hydrocarbon compounds and an argon carrier gas, and generating a plasma of the processing gas by applying power from a dual-frequency RF source, etching the amorphous carbon layer to form a patterned amorphous carbon layer, and etching feature definitions in the dielectric material layer corresponding to the patterned amorphous carbon layer. The amorphous carbon layer may act as an etch stop, an anti-reflective coating, or both.

    摘要翻译： 提供了沉积无定形碳材料的方法。 一方面，本发明提供了一种处理衬底的方法，包括在衬底的表面上形成介电材料层，通过引入包含一种或多种烃化合物和氩气的处理气体在电介质材料层上沉积无定形碳层 并且通过从双频RF源施加电力来产生处理气体的等离子体，蚀刻无定形碳层以形成图案化的非晶碳层，并且在对应于图案化无定形碳的电介质材料层中蚀刻特征定义 层。 无定形碳层可用作蚀刻停止层，抗反射涂层或两者。