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    Localized energy pulse rapid thermal anneal dielectric film densification method
    8.
    发明授权
    Localized energy pulse rapid thermal anneal dielectric film densification method 有权
    局部能量脉冲快速热退火电介质膜致密化方法

    公开(公告)号：US07163899B1

    公开(公告)日：2007-01-16

    申请号：US11327668

    申请日：2006-01-05

    申请人： Seon-Mee Cho ,  George D. Papasouliotis

    发明人： Seon-Mee Cho ,  George D. Papasouliotis

    IPC分类号： H01L21/31 ,  H01L21/461

    CPC分类号： H01L21/31612 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/76224

    摘要： A densified dielectric film is formed on a substrate by a process that involves annealing a film deposited on the substrate by application of a localized energy pulse, such as a laser pulse, for example one of about 10 to 100 ns in duration from an excimer laser, that raises the temperature of the film above 1000° C. without raising the substrate temperature sufficiently to modify its properties (e.g., the substrate temperature remains below 550° C. or preferably in many applications below 400° C.). The dielectric deposition may be by any suitable process, for example CVD, SOG (spin-on glass), ALD, or catalyzed PDL. The resulting film is densified without detrimentally impacting underlying substrate layers. The invention enables dielectric gap fill and film densification at low temperature to the 45 nm technology node and beyond, while maintaining oxide film properties.

    摘要翻译： 通过包括通过施加诸如激光脉冲的局部能量脉冲（例如从受激准分子激光器的约10至100ns的持续时间之一）来退火沉积在基板上的膜的方法，在基板上形成致密的电介质膜 ，其将膜的温度提高到1000℃以上，而不会充分提高衬底温度以改变其性质（例如，衬底温度保持在550℃以下，或优选在低于400℃的许多应用中）。 电介质沉积可以通过任何合适的方法，例如CVD，SOG（旋涂玻璃），ALD或催化的PDL。 所得膜被致密化而不会有害地冲击下面的基底层。 本发明能够在维持氧化膜性能的同时，在45纳米技术节点及其以外的低温下实现电介质间隙填充和薄膜致密化。

    Method for porogen removal and mechanical strength enhancement of low-k carbon doped silicon oxide using low thermal budget microwave curing
    10.
    发明授权
    Method for porogen removal and mechanical strength enhancement of low-k carbon doped silicon oxide using low thermal budget microwave curing 有权
    使用低热预算微波固化的低k碳掺杂氧化硅致孔剂去除和机械强度增强方法

    公开(公告)号：US07892985B1

    公开(公告)日：2011-02-22

    申请号：US11280113

    申请日：2005-11-15

    申请人： Seon-Mee Cho ,  George D. Papasouliotis ,  Mike Barnes

    发明人： Seon-Mee Cho ,  George D. Papasouliotis ,  Mike Barnes

    IPC分类号： H01L21/4757

    CPC分类号： H01L21/76825 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02345 ,  H01L2221/1047

    摘要： Improved methods for preparing a low-k dielectric material on a substrate using microwave radiation are provided. The use of microwave radiation allows the preparation of low-k films to be accomplished at low temperatures. According to various embodiments, microwave radiation is used to remove porogen from a precursor film and/or to increase the strength of the resulting porous dielectric layer. In a preferred embodiment, methods involve (a) forming a precursor film that contains a porogen and a structure former on a substrate, (b) exposing the precursor film to microwave radiation to remove the porogen from the precursor film to thereby create voids within the dielectric material and form the porous low-k dielectric layer and (c) exposing the dielectric material to microwave radiation in a manner that increases the mechanical strength of the porous low-k dielectric layer.

    摘要翻译： 提供了使用微波辐射在衬底上制备低k电介质材料的改进方法。 使用微波辐射可以使低k膜的制备在低温下完成。 根据各种实施例，使用微波辐射来从前体膜去除造孔剂和/或增加所得到的多孔介电层的强度。 在优选的实施方案中，方法包括（a）在基底上形成含有致孔剂和结构形成剂的前体膜，（b）将前体膜暴露于微波辐射以从前体膜去除致孔剂，从而在 介电材料并形成多孔低k电介质层，和（c）以提高多孔低k电介质层的机械强度的方式将电介质材料暴露于微波辐射。