公开(公告)号：US06303958B1

公开(公告)日：2001-10-16

申请号：US09095890

申请日：1998-06-11

申请人： Hiroyuki Kanaya ,  Osamu Hidaka ,  Kumi Okuwada ,  Hiroshi Mochizuki

发明人： Hiroyuki Kanaya ,  Osamu Hidaka ,  Kumi Okuwada ,  Hiroshi Mochizuki

IPC分类号： H01L27108

CPC分类号： H01L27/11502 ,  H01L27/11507

摘要： A semiconductor integrated circuit has a ferroelectric capacitor. The ferroelectric capacitor includes a first insulation film formed above a semiconductor substrate, a first electrode which is buried in a first hole formed in the first insulation film and whose surface is flattened, a second insulation film formed above the first insulation film and having a second hole above the first electrode, a ferroelectric film formed in the second hole, and a second electrode formed in the second hole and above the ferroelectric film and flattened so as to be flush with a surface of the second insulation film.

摘要翻译： 半导体集成电路具有铁电电容器。 铁电电容器包括形成在半导体衬底上的第一绝缘膜，第一电极，其被埋在形成在第一绝缘膜中的表面平坦化的第一孔中，形成在第一绝缘膜上方的第二绝缘膜， 在第二孔中形成的铁电膜，形成在第二孔中并在铁电体膜上方的第二电极，并且与第二绝缘膜的表面齐平。

公开(公告)号：US09276195B2

公开(公告)日：2016-03-01

申请号：US13965149

申请日：2013-08-12

申请人： Hiroyuki Kanaya ,  Kuniaki Sugiura

发明人： Hiroyuki Kanaya ,  Kuniaki Sugiura

IPC分类号： H01L29/82 ,  H01L43/00 ,  H01L43/02 ,  H01L43/08 ,  H01L27/22

CPC分类号： H01L43/02 ,  H01L27/228 ,  H01L43/08

摘要： According to one embodiment, a magnetic random access memory includes a magnetoresistive element, a contact arranged under the magnetoresistive element and connected to the magnetoresistive element, and an insulating film continuously formed from a periphery of the contact to a side surface of the magnetoresistive element and including a protective portion covering the side surface of the magnetoresistive element.

摘要翻译： 根据一个实施例，磁性随机存取存储器包括磁阻元件，布置在磁阻元件下方并连接到磁阻元件的触点，以及从触点的周边连续形成到磁阻元件的侧表面的绝缘膜，以及 包括覆盖磁阻元件的侧表面的保护部分。

公开(公告)号：US07573120B2

公开(公告)日：2009-08-11

申请号：US11170316

申请日：2005-06-30

申请人： Katsuaki Natori ,  Hiroyuki Kanaya ,  Koji Yamakawa

发明人： Katsuaki Natori ,  Hiroyuki Kanaya ,  Koji Yamakawa

IPC分类号： H01L29/93

CPC分类号： H01L27/11507 ,  G11C11/22 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02197 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02356 ,  H01L21/3141 ,  H01L21/31616 ,  H01L21/31691 ,  H01L27/11502 ,  H01L28/55 ,  H01L28/65

摘要： According to an aspect of the present invention, there is provided a semiconductor device comprising a semiconductor substrate, a capacitor which is disposed above the semiconductor substrate and in which a dielectric film is held between lower and upper electrodes, an oxide film formed in such a manner as to coat the capacitor and having a thickness of 5 nm or more and 50 nm or less, and a protective film formed on the oxide film by an ALD process.

摘要翻译： 根据本发明的一个方面，提供了一种半导体器件，包括半导体衬底，电容器，其设置在半导体衬底上方，并且电介质膜保持在下电极和上电极之间，形成在这种 作为涂敷电容器的厚度为5nm以上且50nm以下的方式，以及通过ALD工艺在氧化物膜上形成的保护膜。

公开(公告)号：US07508020B2

公开(公告)日：2009-03-24

申请号：US11385999

申请日：2006-03-22

申请人： Hiroyuki Kanaya

发明人： Hiroyuki Kanaya

IPC分类号： H01L29/94

CPC分类号： H01L28/55 ,  H01L27/11502 ,  H01L27/11507

摘要： A semiconductor device comprising a substrate and a ferroelectric capacitor formed on the substrate. The ferroelectric capacitor includes a lower electrode, an upper electrode and a ferroelectric film interposed between the lower and upper electrodes. The ferroelectric capacitor having sidewalls receded from sidewalls of the upper electrode.

摘要翻译： 一种半导体器件，包括形成在衬底上的衬底和铁电电容器。 铁电电容器包括下电极，上电极和介于下电极和上电极之间的铁电体膜。 铁电电容器具有从上电极的侧壁退出的侧壁。

公开(公告)号：US07402858B2

公开(公告)日：2008-07-22

申请号：US11941755

申请日：2007-11-16

申请人： Osamu Hidaka ,  Iwao Kunishima ,  Hiroyuki Kanaya

发明人： Osamu Hidaka ,  Iwao Kunishima ,  Hiroyuki Kanaya

IPC分类号： H01L29/76 ,  H01L29/94

CPC分类号： H01L27/11502 ,  H01L21/76802 ,  H01L27/105 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55

摘要： A semiconductor memory device includes a semiconductor substrate having a first region and a second region, a transistor placed in the first region of the semiconductor substrate, a first insulating film formed on the semiconductor substrate in the first and second regions and on the transistor, a first ferroelectric capacitor formed on the first insulating film in the first region and electrically connected to the transistor, a hydrogen barrier film formed above the first ferroelectric capacitor and above the first insulating film in the first and second regions, a first contact penetrating the hydrogen barrier film in the first region and electrically connected to the first ferroelectric capacitor, and a second contact which penetrates the hydrogen barrier film in the second region and which is in a floating state.

公开(公告)号：US07233040B2

公开(公告)日：2007-06-19

申请号：US10833096

申请日：2004-04-28

申请人： Keisuke Nakazawa ,  Koji Yamakawa ,  Katsuaki Natori ,  Soichi Yamazaki ,  Hiroshi Itokawa ,  Hiroyuki Kanaya

发明人： Keisuke Nakazawa ,  Koji Yamakawa ,  Katsuaki Natori ,  Soichi Yamazaki ,  Hiroshi Itokawa ,  Hiroyuki Kanaya

IPC分类号： H01L29/94

CPC分类号： H01L27/11502 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/31691 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65

摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate and including a film which contains Pb, Sr, Zr, Ti, Ru and O and a dielectric film which contains Pb, Zr, Ti and O and which is provided on the film containing Pb, Sr, Zr, Ti, Ru and O.

摘要翻译： 公开了一种半导体器件，包括半导体衬底和设置在半导体衬底之上的电容器，并且包括含有Pb，Sr，Zr，Ti，Ru和O的膜和包含Pb，Zr，Ti和O的电介质膜， 提供在含有Pb，Sr，Zr，Ti，Ru和O的膜上

公开(公告)号：US20050093042A1

公开(公告)日：2005-05-05

申请号：US10952871

申请日：2004-09-30

申请人： Keisuke Nakazawa ,  Hiroyuki Kanaya ,  Atsuko Kawasaki

发明人： Keisuke Nakazawa ,  Hiroyuki Kanaya ,  Atsuko Kawasaki

IPC分类号： H01L27/105 ,  H01L21/02 ,  H01L21/312 ,  H01L21/8246 ,  H01L27/115 ,  H01L29/76

CPC分类号： H01L27/11502 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/3125 ,  H01L27/11507 ,  H01L28/57

摘要： A semiconductor device comprises a semiconductor substrate, a plurality of capacitors provided above the semiconductor substrate and including a lower electrode, a ferroelectric film, and an upper electrode, and a polysilazane-based coated insulating film provided on the plurality of capacitors and between the plurality of capacitors and burying a gap between the plurality of capacitors.

摘要翻译： 半导体器件包括半导体衬底，设置在半导体衬底之上并包括下电极，铁电体膜和上电极的多个电容器，以及设置在多个电容器上和多个电容器之间的聚硅氮烷基涂覆绝缘膜 的电容器并且掩埋多个电容器之间的间隙。

公开(公告)号：US06699726B2

公开(公告)日：2004-03-02

申请号：US10336012

申请日：2003-01-03

申请人： Osamu Hidaka ,  Sumito Ootsuki ,  Hiroshi Mochizuki ,  Hiroyuki Kanaya ,  Kumi Okuwada ,  Tomio Katata ,  Norihisa Arai ,  Hiroyuki Takenaka

发明人： Osamu Hidaka ,  Sumito Ootsuki ,  Hiroshi Mochizuki ,  Hiroyuki Kanaya ,  Kumi Okuwada ,  Tomio Katata ,  Norihisa Arai ,  Hiroyuki Takenaka

IPC分类号： H01G706

CPC分类号： H01L21/76831 ,  H01L21/76801 ,  H01L21/76804 ,  H01L21/76834 ,  H01L21/7685 ,  H01L21/76895 ,  H01L23/5226 ,  H01L27/11502 ,  H01L28/55 ,  H01L2924/0002 ,  H01L2924/00

摘要： The semiconductor device is constituted in such a manner that a switching transistor having a drain region and a source region which are comprised of an impurity-diffused region is formed in the surface layer portion of a semiconductor substrate. On the semiconductor substrate containing the transistor, a first insulation film is formed, and, at the upper layer side of the first insulation film, a capacitor is formed. The capacitor is comprised of a lower electrode, an inter-electrode insulation film comprising one of ferroelectric and high-permittivity dielectric, and an upper electrode. Before the inter-electrode insulation film is formed, a second insulation film is formed so as to cover the side face portion of the inter-electrode insulation film, the second insulation film protecting the side face portion of the inter-electrode insulation film. One of the drain region and the source region and one of the upper electrode and the lower electrode of the capacitor are connected to each other by an electrode wiring. A wiring connected to the other one of the drain region and the source region is formed on the semiconductor substrate.

摘要翻译： 半导体器件以这样的方式构成，即在半导体衬底的表面层部分中形成具有由杂质扩散区域构成的漏极区域和源极区域的开关晶体管。 在含有晶体管的半导体基板上形成第一绝缘膜，在第一绝缘膜的上层侧形成电容器。 电容器包括下电极，包括铁电和高介电常数电介质之一的电极间绝缘膜和上电极。 在形成电极间绝缘膜之前，形成第二绝缘膜以覆盖电极间绝缘膜的侧面部分，第二绝缘膜保护电极间绝缘膜的侧面部分。 漏极区域和源极区域之一以及电容器的上部电极和下部电极中的一个通过电极布线彼此连接。 在半导体衬底上形成连接到另一个漏极区域和源极区域的布线。

公开(公告)号：US06586790B2

公开(公告)日：2003-07-01

申请号：US09359324

申请日：1999-07-23

申请人： Hiroyuki Kanaya ,  Iwao Kunishima ,  Koji Yamakawa ,  Tsuyoshi Iwamoto ,  Hiroshi Mochizuki

发明人： Hiroyuki Kanaya ,  Iwao Kunishima ,  Koji Yamakawa ,  Tsuyoshi Iwamoto ,  Hiroshi Mochizuki

IPC分类号： H01L2976

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/56 ,  H01L28/57 ,  H01L28/65

摘要： There is provided a semiconductor device having a ferroelectric capacitor formed on a semiconductor substrate covered with an insulator film, wherein the ferroelectric capacitor comprises: a bottom electrode formed on the insulator film; a ferroelectric film formed on the bottom electrode; and a top electrode formed on the ferroelectric film. The ferroelectric film has a stacked structure of either of two-layer-ferroelectric film or three-layer-ferroelectric film. The upper ferroelectric film is metallized and prevents hydrogen from diffusing in lower ferroelectric layer. Crystal grains of the stacked ferroelectric films are preferably different.

摘要翻译： 提供一种半导体器件，其具有形成在被绝缘体膜覆盖的半导体衬底上的铁电电容器，其中所述强电介质电容器包括：形成在所述绝缘膜上的底部电极; 形成在底部电极上的铁电体膜; 以及形成在强电介质膜上的顶部电极。 铁电体膜具有两层铁电体膜或三层铁电体膜的层叠结构。 上部铁电膜被金属化，并防止氢在下部铁电层中扩散。 堆叠的铁电体膜的晶粒优选不同。

公开(公告)号：US06521927B2

公开(公告)日：2003-02-18

申请号：US09102616

申请日：1998-06-23

申请人： Osamu Hidaka ,  Sumito Ootsuki ,  Hiroshi Mochizuki ,  Hiroyuki Kanaya ,  Kumi Okuwada ,  Tomio Katata ,  Norihisa Arai ,  Hiroyuki Takenaka

发明人： Osamu Hidaka ,  Sumito Ootsuki ,  Hiroshi Mochizuki ,  Hiroyuki Kanaya ,  Kumi Okuwada ,  Tomio Katata ,  Norihisa Arai ,  Hiroyuki Takenaka

IPC分类号： H01L31119

CPC分类号： H01L21/76831 ,  H01L21/76801 ,  H01L21/76804 ,  H01L21/76834 ,  H01L21/7685 ,  H01L21/76895 ,  H01L23/5226 ,  H01L27/11502 ,  H01L28/55 ,  H01L2924/0002 ,  H01L2924/00

摘要： The semiconductor device is constituted in such a manner that a switching transistor having a drain region and a source region which are comprised of an impurity-diffused region is formed in the surface layer portion of a semiconductor substrate. On the semiconductor substrate containing the transistor, a first insulation film is formed, and, at the upper layer side of the first insulation film, a capacitor is formed. The capacitor is comprised of a lower electrode, an inter-electrode insulation film comprising one of ferroelectric and high-permittivity dielectric, and an upper electrode. Before the inter-electrode insulation film is formed, a second insulation film is formed so as to cover the side face portion of the inter-electrode insulation film, the second insulation film protecting the side face portion of the inter-electrode insulation film. One of the drain region and the source region and one of the upper electrode and the lower electrode of the capacitor are connected to each other by an electrode wiring. A wiring connected to the other one of the drain region and the source region is formed on the semiconductor. substrate.

摘要翻译： 半导体器件以这样的方式构成，即在半导体衬底的表面层部分中形成具有由杂质扩散区域构成的漏极区域和源极区域的开关晶体管。 在含有晶体管的半导体基板上形成第一绝缘膜，在第一绝缘膜的上层侧形成电容器。 电容器包括下电极，包括铁电和高介电常数电介质之一的电极间绝缘膜和上电极。 在形成电极间绝缘膜之前，形成第二绝缘膜以覆盖电极间绝缘膜的侧面部分，第二绝缘膜保护电极间绝缘膜的侧面部分。 漏极区域和源极区域之一以及电容器的上部电极和下部电极中的一个通过电极布线彼此连接。 在半导体上形成与漏极区域和源极区域中的另一个连接的布线。 基质。