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    Therapeutic ultrasound transducer chip with integrated ultrasound imager and methods of making and using the same
    31.
    发明授权
    Therapeutic ultrasound transducer chip with integrated ultrasound imager and methods of making and using the same 有权
    超声波传感器芯片采用集成超声波成像仪及其制作与使用方法

    公开(公告)号：US09079219B2

    公开(公告)日：2015-07-14

    申请号：US12920271

    申请日：2009-02-27

    Applicant: Jingkuang Chen

    Inventor： Jingkuang Chen

    IPC: A61B8/00 ,  G02B6/30 ,  A61H1/00 ,  B06B1/02

    CPC classification number: B06B1/0292

    Abstract: A therapeutic ultrasound device may include a substrate, at least one high power capacitive micromachined ultrasonic transducer, and at least one imager transducer comprising a capacitive micromachined ultrasonic transducer. The at least one high power capacitive micromachined ultrasonic transducer and the imager transducer may be monolithically integrated on the substrate.

    Abstract translation: 治疗性超声装置可以包括衬底，至少一个高功率电容微加工超声换能器，以及包括电容微加工超声换能器的至少一个成像器换能器。 至少一个高功率电容微加工超声换能器和成像器换能器可以单片地集成在基底上。

    Three-dimensional, ultrasonic transducer arrays, methods of making ultrasonic transducer arrays, and devices including ultrasonic transducer arrays
    33.
    发明授权
    Three-dimensional, ultrasonic transducer arrays, methods of making ultrasonic transducer arrays, and devices including ultrasonic transducer arrays 有权
    三维超声波换能器阵列，制造超声波换能器阵列的方法以及包括超声换能器阵列的装置

    公开(公告)号：US08372680B2

    公开(公告)日：2013-02-12

    申请号：US11685199

    申请日：2007-03-12

    Applicant: Jingkuang Chen

    Inventor： Jingkuang Chen

    IPC: H01L21/00 ,  H04R25/00

    CPC classification number: B06B1/06 ,  A61B1/041 ,  A61B8/12 ,  A61B8/4472 ,  A61B8/4488 ,  A61B8/4494 ,  B06B1/0292 ,  B81B2201/0271 ,  B81C1/00095 ,  B81C3/008 ,  G01S15/8929 ,  Y10T29/42

    Abstract: Medical imaging devices may comprise an array of ultrasonic transducer elements. Each transducer element may comprise a substrate having a doped surface creating a highly conducting surface layer, a layer of thermal oxide on the substrate, a layer of silicon nitride on the layer of thermal oxide, a layer of silicon dioxide on the layer of silicon nitride, and a layer of conducting thin film on the layer of silicon dioxide. The layers of silicon dioxide and thermal oxide may sandwich the layer of silicon nitride, and the layer of conducting thin film may be separated from the layer of silicon nitride by the layer of silicon dioxide.

    Abstract translation: 医疗成像装置可以包括超声换能器元件阵列。 每个换能器元件可以包括具有掺杂表面的衬底，其产生高导电表面层，衬底上的热氧化物层，热氧化层上的氮化硅层，氮化硅层上的二氧化硅层 ，以及二氧化硅层上的导电薄膜层。 二氧化硅和热氧化物层可以夹持氮化硅层，并且导电薄膜层可以通过二氧化硅层与氮化硅层分离。

    Systems and methods for integration of heterogeneous circuit devices
    34.
    发明授权
    Systems and methods for integration of heterogeneous circuit devices 失效
    用于集成异构电路器件的系统和方法

    公开(公告)号：US07352047B2

    公开(公告)日：2008-04-01

    申请号：US10727692

    申请日：2003-12-04

    Applicant: Jingkuang Chen ,  Yi Su

    Inventor： Jingkuang Chen ,  Yi Su

    IPC: H01L21/00

    CPC classification number: B81C1/00246 ,  B81B2201/047 ,  B81C2203/0735 ,  H01L21/823493 ,  H01L21/823892 ,  H01L21/84 ,  H01L27/0617 ,  H01L27/1203

    Abstract: A heterogeneous device comprises a substrate and a plurality of heterogeneous circuit devices defined in the substrate. In embodiments, a plurality of heterogeneous circuit devices are integrated by successively masking and ion implanting the substrate. The heterogeneous device may further comprise at least one microelectromechanical system-based element and/or at least one photodiode. In embodiments, the heterogeneous circuit devices comprise at least one CMOS transistor and at least one DMOS transistor. In embodiments, the substrate comprises a layer of silicon or a layer of p-type silicon. In other embodiments, the substrate comprises a silicon-on-insulator wafer comprising a single-crystal-silicon layer or a single-crystal-P-silicon layer, a substrate and an insulator layer therebetween.

    Abstract translation: 异质器件包括衬底和限定在衬底中的多个异质电路器件。 在实施例中，通过依次掩蔽和离子注入衬底来整合多个异构电路器件。 异质装置还可以包括至少一个基于微机电系统的元件和/或至少一个光电二极管。 在实施例中，异质电路器件包括至少一个CMOS晶体管和至少一个DMOS晶体管。 在实施例中，衬底包括硅层或p型硅层。 在其它实施例中，衬底包括绝缘体上硅晶片，其包括单晶硅层或单晶P硅层，衬底及其间的绝缘体层。

    Electromechanical memory cell with torsional movement
    35.
    发明申请
    Electromechanical memory cell with torsional movement 失效
    具有扭转运动的机电式记忆体

    公开(公告)号：US20070002604A1

    公开(公告)日：2007-01-04

    申请号：US11166297

    申请日：2005-06-24

    Applicant: Pinyen Lin ,  Jingkuang Chen ,  Jun Ma

    Inventor： Pinyen Lin ,  Jingkuang Chen ,  Jun Ma

    IPC: G11C11/00

    CPC classification number: G11C23/00 ,  B82Y10/00 ,  G11B9/04 ,  G11B9/06

    Abstract: A memory cell uses a pair of cantilevers to store a bit of information. Changing the relative position of the cantilevers determines whether they are electrically conducting or not. The on and off state of this mechanical latch is switched by using, for example, electrostatic, electromagnetic or thermal forces applied sequentially on the two cantilevers to change their relative position. The amount of power required to change the state of the cell is reduced by supporting at least one of the cantilevers with at least one lateral projection that is placed in torsion during cantilever displacement. After a bit of data is written, the cantilevers are locked by mechanical forces inherent in the cantilevers and will not change state unless a sequential electrical writing signal is applied. The sequential nature of the required writing signal makes inadvertent, radiation or noise related data corruption unlikely.

    Abstract translation: 存储单元使用一对悬臂来存储一些信息。 改变悬臂的相对位置确定它们是否导电。 通过使用例如依次施加在两个悬臂上的静电，电磁或热力来改变其相对位置来切换该机械闩锁的开和关状态。 通过在至少一个横向突起处支撑至少一个横向突起来减小悬臂状态改变所需的功率量，所述至少一个横向突起在悬臂位移期间处于扭转状态。 在写入一些数据之后，悬臂由悬臂中固有的机械力锁定，除非应用顺序的电气写入信号，否则不会改变状态。 所需写入信号的顺序性质使得无意中，辐射或噪声相关的数据损坏不太可能。

    Micro-fabricated shielded conductors
    40.
    发明授权
    Micro-fabricated shielded conductors 有权
    微制屏蔽导体

    公开(公告)号：US06465856B2

    公开(公告)日：2002-10-15

    申请号：US09812498

    申请日：2001-03-19

    Applicant: Peter M. Gulvin ,  Jingkuang Chen

    Inventor： Peter M. Gulvin ,  Jingkuang Chen

    IPC: H01L2982

    CPC classification number: B41J2/1639 ,  B41J2/16 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2002/14403 ,  B81B7/0006

    Abstract: A microstructure that may be used as an electrical connection in a microfabricated electro-mechanical system (MEMS) apparatus. The microstructure may have one or more isolatable electrical connections for signal transmission. The microstructure allows a MEMS apparatus to shield signal transmissions from the effects of electromagnetic interference or conductive fluids.

    Abstract translation: 微结构可用作微加工机电系统（MEMS）装置中的电连接。 微结构可以具有用于信号传输的一个或多个可分离的电连接。 微结构允许MEMS装置屏蔽信号传输免受电磁干扰或导电流体的影响。

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