公开(公告)号：US20120273871A1

公开(公告)日：2012-11-01

申请号：US13095664

申请日：2011-04-27

申请人： Joseph A. Yedinak ,  Christopher L. Rexer ,  Jaegil Lee ,  Hamza Yilmaz ,  Chongman Yun

发明人： Joseph A. Yedinak ,  Christopher L. Rexer ,  Jaegil Lee ,  Hamza Yilmaz ,  Chongman Yun

IPC分类号： H01L29/78 ,  H01L21/20 ,  H01L21/336 ,  H01L29/02

CPC分类号： H01L29/7813 ,  H01L29/045 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/66734 ,  H01L29/7811 ,  H01L29/872

摘要： A power device includes a semiconductor region which in turn includes a plurality of alternately arranged pillars of first and second conductivity type. Each of the plurality of pillars of second conductivity type further includes a plurality of implant regions of the second conductivity type arranged on top of one another along the depth of pillars of second conductivity type, and a trench portion filled with semiconductor material of the second conductivity type directly above the plurality of implant regions of second conductivity type.

公开(公告)号：US08564024B2

公开(公告)日：2013-10-22

申请号：US12421448

申请日：2009-04-09

申请人： Joseph A. Yedinak ,  Ashok Challa ,  Daniel M. Kinzer ,  Dean E. Probst

发明人： Joseph A. Yedinak ,  Ashok Challa ,  Daniel M. Kinzer ,  Dean E. Probst

IPC分类号： H01L29/76

CPC分类号： H01L29/7813 ,  H01L29/0611 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/7811 ,  H01L29/7827 ,  H01L29/872 ,  H01L29/8725

摘要： Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.

公开(公告)号：US08563377B2

公开(公告)日：2013-10-22

申请号：US13443986

申请日：2012-04-11

申请人： Joseph A. Yedinak ,  Daniel Calafut ,  Dean E. Probst

发明人： Joseph A. Yedinak ,  Daniel Calafut ,  Dean E. Probst

IPC分类号： H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/0611 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/7811 ,  H01L29/7827 ,  H01L29/872 ,  H01L29/8725

摘要： Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.

公开(公告)号：US20120193748A1

公开(公告)日：2012-08-02

申请号：US13443986

申请日：2012-04-11

申请人： Joseph A. Yedinak ,  Daniel Calafut ,  Dean E. Probst

发明人： Joseph A. Yedinak ,  Daniel Calafut ,  Dean E. Probst

IPC分类号： H01L29/06

CPC分类号： H01L29/7813 ,  H01L29/0611 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/7811 ,  H01L29/7827 ,  H01L29/872 ,  H01L29/8725

摘要： Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.

摘要翻译： 公开了具有提供增加的击穿电压和其它益处的特征的功率半导体器件。

公开(公告)号：US20100140696A1

公开(公告)日：2010-06-10

申请号：US12417586

申请日：2009-04-02

申请人： Joseph A. Yedinak ,  Daniel Calafut ,  Dean E. Probst

发明人： Joseph A. Yedinak ,  Daniel Calafut ,  Dean E. Probst

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L29/0611 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/7811 ,  H01L29/7827 ,  H01L29/872 ,  H01L29/8725

摘要： Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.

摘要翻译： 公开了具有提供增加的击穿电压和其它益处的特征的功率半导体器件。

公开(公告)号：US20080135931A1

公开(公告)日：2008-06-12

申请号：US12032123

申请日：2008-02-15

申请人： Ashok Challa ,  Alan Elbanhawy ,  Thomas E. Grebs ,  Nathan L. Kraft ,  Dean E. Probst ,  Rodney S. Ridlay ,  Steven P. Sapp ,  Qi Wang ,  Chongman Yun ,  J.G. Lee ,  Peter H. Wilson ,  Joseph A. Yedinak ,  J.Y. Jung ,  H.C. Jang ,  Babak S. Sanl ,  Richard Stokes ,  Gary M. Dolny ,  John Mytych ,  Becky Losee ,  Adam Selsley ,  Robert Herrick ,  James J. Murphy ,  Gordon K. Madson ,  Bruce D. Marchant ,  Christopher L. Rexer ,  Christopher B. Kocon ,  Debra S. Woolsey

发明人： Ashok Challa ,  Alan Elbanhawy ,  Thomas E. Grebs ,  Nathan L. Kraft ,  Dean E. Probst ,  Rodney S. Ridlay ,  Steven P. Sapp ,  Qi Wang ,  Chongman Yun ,  J.G. Lee ,  Peter H. Wilson ,  Joseph A. Yedinak ,  J.Y. Jung ,  H.C. Jang ,  Babak S. Sanl ,  Richard Stokes ,  Gary M. Dolny ,  John Mytych ,  Becky Losee ,  Adam Selsley ,  Robert Herrick ,  James J. Murphy ,  Gordon K. Madson ,  Bruce D. Marchant ,  Christopher L. Rexer ,  Christopher B. Kocon ,  Debra S. Woolsey

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/407 ,  H01L21/26586 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/6835 ,  H01L23/4952 ,  H01L23/49816 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/165 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/4933 ,  H01L29/495 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7396 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7805 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7815 ,  H01L29/7828 ,  H01L29/7831 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2224/16 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H02M3/00 ,  H02M3/33592 ,  H02M7/48 ,  Y02B70/1475 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor power device includes a drift region of a first conductivity type, a well region extending above the drift region and having a second conductivity type opposite the first conductivity type, an active trench extending through the well region and into the drift region, source regions having the first conductivity type formed in the well region adjacent the active trench, and a first termination trench extending below the well region and disposed at an outer edge of an active region of the device. The sidewalls and bottom of the active trench are lined with dielectric material, and substantially filled with a first conductive layer forming an upper electrode and a second conductive layer forming a lower electrode, the upper electrode being disposed above the lower electrode and separated therefrom by inter-electrode dielectric material. The first termination trench can be lined with a layer of dielectric material that is thicker than the dielectric material lining the sidewalls of the active trench, and is substantially filled with conductive material.

摘要翻译： 半导体功率器件包括第一导电类型的漂移区域，在漂移区域上方延伸并且具有与第一导电类型相反的第二导电类型的阱区域，延伸穿过阱区域并进入漂移区域的有源沟槽，源极区域 具有形成在邻近有源沟槽的阱区中的第一导电类型，以及在阱区下延伸并设置在器件的有源区的外边缘处的第一端接沟槽。 有源沟槽的侧壁和底部衬有介电材料，并且基本上填充有形成上电极的第一导电层和形成下电极的第二导电层，上电极设置在下电极之上， 电介质材料。 第一端接沟槽可以衬有一层电介质材料，其比在有源沟槽侧壁上的电介质材料更厚，并且基本上填充有导电材料。

公开(公告)号：US06798019B2

公开(公告)日：2004-09-28

申请号：US10055211

申请日：2002-01-23

申请人： Joseph A. Yedinak ,  Dwayne S. Reichl ,  Jack E. Wojslawowicz ,  Bernard J. Czeck ,  Robert D. Baran ,  Douglas Lange

发明人： Joseph A. Yedinak ,  Dwayne S. Reichl ,  Jack E. Wojslawowicz ,  Bernard J. Czeck ,  Robert D. Baran ,  Douglas Lange

IPC分类号： H01L2973

CPC分类号： H01L29/0696 ,  H01L29/1033 ,  H01L29/1037 ,  H01L29/7395 ,  H01L29/7397

摘要： An IGBT has striped cell with source stripes 2a, 2b continuous or segmented along the length of the base stripe 3. The opposite stripes are periodically connected together by the N+ contact regions 20 to provide channel resistance along the width of the source stripes 2a, 2b. For continuous stripes the resistance between two sequential contact areas 20a, 20b is greatest in the middle and current concentrates near the source contact regions 20. The wider the spacing between the contacts 20, the larger the resistive drop to the midpoint between two N+ contacts 20.

摘要翻译： IGBT具有沿着基带3的长度连续或分段的源极条2a，2b的条纹单元。相反的条由N +接触区域20周期性地连接在一起，以沿着源极条2a，2b的宽度提供沟道电阻 。 对于连续条纹，两个顺序接触区域20a，20b之间的电阻在中间是最大的，并且电流集中在源极接触区域20附近。触点20之间的间隔越宽，两个N +触点20之间的中点的电阻降低越大 。

公开(公告)号：US06777747B2

公开(公告)日：2004-08-17

申请号：US10050976

申请日：2002-01-18

申请人： Joseph A. Yedinak ,  Jack E. Wojslawowicz ,  Bernard J. Czeck ,  Robert D. Baran ,  Douglas Lange

发明人： Joseph A. Yedinak ,  Jack E. Wojslawowicz ,  Bernard J. Czeck ,  Robert D. Baran ,  Douglas Lange

IPC分类号： H01L2976

CPC分类号： H01L29/7397 ,  H01L29/0834 ,  H01L29/36 ,  H01L29/7395

摘要： An IGBT has a thick buffer region with increased doping to improve self-clamped inductive switching and device manufacture. A planar or trench gate IGBT has a buffer layer more than 25 microns thick. The buffer layer is doped high enough so that its carriers are more numerous than minority carriers, particularly at the transition between the N buffer & N drift region.

摘要翻译： IGBT具有增加掺杂的厚缓冲区，以改善自感感开关和器件制造。 平面或沟槽栅极IGBT具有超过25微米厚的缓冲层。 缓冲层被掺杂得足够高，使得其载流子比少数载流子更多，特别是在N缓冲区和N漂移区之间的转变。

公开(公告)号：US20120091516A1

公开(公告)日：2012-04-19

申请号：US13084437

申请日：2011-04-11

申请人： Robert Kuo-Chang Yang ,  Sunglyong Kim ,  Joseph A. Yedinak

发明人： Robert Kuo-Chang Yang ,  Sunglyong Kim ,  Joseph A. Yedinak

IPC分类号： H01L27/06 ,  H01L29/06

CPC分类号： H01L29/0847 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0692 ,  H01L29/402 ,  H01L29/407 ,  H01L29/7835

摘要： Voltage termination structures include one or more capacitively coupled trenches, which can be similar to the trenches in the drift regions of the active transistor. The capacitively coupled trenches in the termination regions are arranged with an orientation that is either parallel or perpendicular to the trenches in the active device drift region. The Voltage termination structures can also include capacitively segmented trench structures having dielectric lined regions filled with conducting material and completely surrounded by a silicon mesa region. The Voltage termination structures can further include continuous regions composed entirely of an electrically insulating layer extending a finite distance vertically from the device surface.

摘要翻译： 电压端接结构包括一个或多个电容耦合沟槽，其可以类似于有源晶体管的漂移区域中的沟槽。 终端区域中的电容耦合沟槽被布置成具有与有源器件漂移区域中的沟槽平行或垂直的取向。 电压端接结构还可以包括具有填充有导电材料并完全被硅台面区域包围的电介质衬里区域的电容分割沟槽结构。 电压端接结构还可包括连续区域，该连续区域完全由从器件表面垂直延伸有限距离的电绝缘层组成。

公开(公告)号：US08013391B2

公开(公告)日：2011-09-06

申请号：US11963668

申请日：2007-12-21

申请人： Joseph A. Yedinak ,  Nathan L. Kraft

发明人： Joseph A. Yedinak ,  Nathan L. Kraft

IPC分类号： H01L29/78

CPC分类号： H01L29/407 ,  H01L21/26586 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/6835 ,  H01L23/4952 ,  H01L23/49816 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/165 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/4933 ,  H01L29/495 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7396 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7805 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7815 ,  H01L29/7828 ,  H01L29/7831 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2224/16 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H02M3/00 ,  H02M3/33592 ,  H02M7/48 ,  Y02B70/1475 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor power device includes a drift region of a first conductivity type, a well region extending above the drift region and having a second conductivity type opposite the first conductivity type, active trenches extending through the well region and into the drift region where the active trenches define an active area. Inside each of the active trenches is formed a first conductive gate electrode disposed along and insulated from a first trench sidewall, a second conductive gate electrode disposed along and insulated from a second trench sidewall, and a conductive shield electrode disposed between the first and second conductive gate electrodes, wherein the shield electrode is insulated from and extends deeper inside the trench than the first and second conductive gate electrodes. The device also includes source regions having the first conductivity type formed inside the well region and adjacent the active trenches. Electrical contact to the conductive shield electrode can be made inside the active area. The device can also include a perimeter trench extending at least partially around the active trenches such that at least some of the active trenches are perpendicular to the perimeter trench, gate fingers extending from a perimeter gate poly runner located in said perimeter trench, and shield poly fingers extending from a perimeter shield poly runner located in the perimeter trench. The gate fingers are staggered with respect to the shield poly fingers.

摘要翻译： 半导体功率器件包括第一导电类型的漂移区域，在漂移区域上方延伸并具有与第一导电类型相反的第二导电类型的阱区域，有源沟槽延伸穿过阱区域并进入漂移区域，其中有源沟槽 定义一个活动区域。 在每个有源沟槽内部形成有沿第一沟槽侧壁和绝缘的第一导电栅电极，与第二沟槽侧壁绝缘的第二导电栅电极和与第二沟槽侧壁绝缘的第二导电栅电极，以及设置在第一和第二导电之间的导电屏蔽电极 栅电极，其中所述屏蔽电极与所述第一和第二导电栅电极绝缘并且在所述沟槽内更深地延伸。 该器件还包括形成在阱区内并与有源沟槽相邻的具有第一导电类型的源区。 可以在有源区域内与导电屏蔽电极电接触。 该装置还可以包括至少部分地围绕有源沟槽延伸的周边沟槽，使得至少一些有源沟槽垂直于周边沟槽，从位于所述周边沟槽中的周边门多晶硅浇道延伸的栅极指状物以及屏蔽聚 手指从位于周边沟槽中的周边屏蔽多晶硅转轮延伸。 门指与屏蔽多指交错交错。