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    Plasma Processing Apparatus and Plasma Processing Method
    31.
    发明申请
    Plasma Processing Apparatus and Plasma Processing Method 有权
    等离子体处理装置和等离子体处理方法

    公开(公告)号：US20070264441A1

    公开(公告)日：2007-11-15

    申请号：US10589272

    申请日：2005-02-15

    申请人： Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Singo Furui ,  Cai Tian ,  Jun Yamashita ,  Nobuhiko Yamamoto ,  Tetsuya Nishizuka ,  Toshihisa Nozawa ,  Shinya Nishimoto ,  Tamaki Yuasa

    发明人： Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Singo Furui ,  Cai Tian ,  Jun Yamashita ,  Nobuhiko Yamamoto ,  Tetsuya Nishizuka ,  Toshihisa Nozawa ,  Shinya Nishimoto ,  Tamaki Yuasa

    IPC分类号： C08F2/46 ,  C23C16/00

    CPC分类号： H01J37/32192 ,  H01J37/32238

    摘要： To improve processing quality by inhibiting the generation of a strong electric field and high-density plasma, near a contact point between a support part supporting a transmissive window and the transmissive window in a plasma processing apparatus utilizing a microwave. In a plasma processing apparatus that processes a wafer W in a process vessel 2 by plasma generated by the supply of a microwave, a transmissive window 20 has, in a center area of its lower surface, a hanging portion 21 made of the same material as a material of the transmissive window 20. Between an outer peripheral surface 21a of the hanging portion 21 and a sidewall inner surface 5a continuing from a support part 6, a gap d is formed, the gap d having a gap length of 0.5 to 10 mm, more preferably 0.5 to 5 mm. The generation of a strong electric field and plasma at the contact point C is inhibited and an amount of sputtered particles, radicals, or the like reaching the wafer W is also reduced.

    摘要翻译： 通过在利用微波的等离子体处理装置中，在支撑透射窗口的支撑部件与透射窗口之间的接触点附近抑制强电场和高密度等离子体的产生来提高处理质量。 在通过由微波供给产生的等离子体处理处理容器2中的晶片W的等离子体处理装置中，透光窗20在其下表面的中心区域具有由与 透气窗20的材料。在悬挂部分21的外周表面21a和从支撑部分6延伸的侧壁内表面5a之间形成间隙d，间隙d的间隙长度为0.5至 10mm，更优选为0.5〜5mm。 在接触点C处产生强电场和等离子体被抑制，并且溅射的颗粒，自由基等到达晶片W的量也减少。

    Microscope
    32.
    发明申请
    Microscope 有权
    显微镜

    公开(公告)号：US20060238745A1

    公开(公告)日：2006-10-26

    申请号：US11363082

    申请日：2006-02-28

    申请人： Takeshi Hashimoto ,  Shinichi Hayashi ,  Junichi Kitagawa

    发明人： Takeshi Hashimoto ,  Shinichi Hayashi ,  Junichi Kitagawa

    IPC分类号： G01N21/00 ,  G01J3/44 ,  G01J3/30 ,  G01N21/64 ,  G01N21/65

    CPC分类号： G01N21/65 ,  G01J3/44 ,  G01N21/636 ,  G01N21/6458 ,  G01N2021/653 ,  G01N2021/656

    摘要： The microscope has a first pulsed laser generating means, a second pulsed laser generating means, an irradiation means to irradiate to a specimen by composing the first pulse light and the second pulse light, a coherent Raman scattering light extraction means for extracting only the coherent Raman scattering light from light emanated from the specimen irradiated, an extraction means for extracting only the multiphoton excitation fluorescence, an extraction means for extracting only the second harmonic wave, a detection means for detecting the extracted coherent Raman scattering light, and a detection means for detecting the extracted fluorescence, and a detection means for detecting the second harmonic wave via the extraction means 7. To single specimen, responding to purposes, observations of the two-photon excitation fluorescence observation, the second harmonic wave observation, and the coherent Raman scattering light observations can be carried out in parallel, or selectively.

    摘要翻译： 显微镜具有第一脉冲激光产生装置，第二脉冲激光产生装置，通过组合第一脉冲光和第二脉冲光照射到样本的照射装置，用于仅提取相干拉曼的相干拉曼散射光提取装置 从照射的样本发出的光的散射光，仅提取多光子激发荧光的提取装置，仅提取二次谐波的提取装置，用于检测所提取的相干拉曼散射光的检测装置，以及检测装置，用于检测 提取的荧光，以及用于经由提取装置7检测二次谐波的检测装置。 对于单个样本，响应目的，可以并行或选择性地进行双光子激发荧光观察，二次谐波观察和相干拉曼散射光观察的观察。

    Plasma processing apparatus
    35.
    发明授权
    Plasma processing apparatus 有权
    等离子体处理装置

    公开(公告)号：US08882962B2

    公开(公告)日：2014-11-11

    申请号：US13075557

    申请日：2011-03-30

    申请人： Jun Yamashita ,  Kazuhiro Isa ,  Hideo Nakamura ,  Junichi Kitagawa

    发明人： Jun Yamashita ,  Kazuhiro Isa ,  Hideo Nakamura ,  Junichi Kitagawa

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  C23C16/44 ,  H01J37/32 ,  C23C16/509 ,  C23C16/455

    CPC分类号： H01J37/32559 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32192

    摘要： Provided is a plasma processing apparatus wherein an electrode embedded in a mounting table is supplied with high frequency power for biasing. A surface, which is exposed to plasma and is of an aluminum cover functioning as an opposite electrode to the electrode of the mounting table, is coated with a protection film, preferably a Y2O3 film. A second portion forming an upper side portion of the processing chamber and a first portion forming a lower side portion of the processing container are provided with an insulating upper liner and an insulating lower liner thicker than the upper liner, respectively. Thus, undesirable short-circuits and abnormal electrical discharge are prevented and stable high-frequency current path is formed.

    摘要翻译： 提供了一种等离子体处理装置，其中嵌入在安装台中的电极被提供用于偏置的高频功率。 暴露于等离子体并且是作为与安装台的电极相对的电极的铝盖的表面涂覆有保护膜，优选Y 2 O 3膜。 形成处理室的上侧部分的第二部分和形成处理容器的下侧部分的第一部分分别设置有比上部衬套更厚的绝缘上衬垫和绝缘下衬套。 因此，防止了不期望的短路和异常放电，并且形成稳定的高频电流路径。

    METHOD FOR EVALUATING CORROSION RESISTANCE OF CANS TO CONTENTS
    37.
    发明申请
    METHOD FOR EVALUATING CORROSION RESISTANCE OF CANS TO CONTENTS 有权
    评估CANS耐腐蚀性的方法

    公开(公告)号：US20140090987A1

    公开(公告)日：2014-04-03

    申请号：US14009426

    申请日：2012-04-10

    申请人： Hisato Noro ,  Yoichiro Yamanaka ,  Junichi Kitagawa ,  Yoshihiko Yasue ,  Hisao Yasuhara

    发明人： Hisato Noro ,  Yoichiro Yamanaka ,  Junichi Kitagawa ,  Yoshihiko Yasue ,  Hisao Yasuhara

    IPC分类号： G01N17/02

    CPC分类号： G01N17/02

    摘要： A method to evaluate the corrosion resistance of a can to a content includes filling the can with the content to form a specimen, setting the specimen in an apparatus capable of blocking an outside atmosphere from entering the specimen, optionally saturating the content with nitrogen gas to expel dissolved oxygen present in the content, thereafter while maintaining the temperature of the content at a constant temperature in the range of 25 to 60° C., applying a constant potential that is more anodic than an immersion potential by 50 mV to 200 mV to the can of the specimen, and evaluating the corrosion resistance of the can to the content based on the accumulated amount of electricity generated during a time appropriately selected from 6 to 48 hours immediately after the application of the constant potential.

    摘要翻译： 评价罐对内容物的耐腐蚀性的方法包括用容纳物填充罐以形成样品，将样品置于能够阻挡外部气氛的装置中进入试样，任选地用氮气使含量饱和至 排出含量中存在的溶解氧，然后在将内容物的温度保持在25〜60℃的恒定温度的同时，将比浸没电位更阳极的恒定电位施加50mV至200mV， 基于在施加恒定电位后立即从6小时至48小时内适当选择的时间内累积的电力累积量来评估罐的耐腐蚀性。

    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
    38.
    发明申请
    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
    等离子体加工设备和等离子体处理方法

    公开(公告)号：US20120067845A1

    公开(公告)日：2012-03-22

    申请号：US13233082

    申请日：2011-09-15

    申请人： Taichi Monden ,  Junichi Kitagawa ,  Jun Yamashita ,  Hideo Nakamura

    发明人： Taichi Monden ,  Junichi Kitagawa ,  Jun Yamashita ,  Hideo Nakamura

    IPC分类号： H01L21/3065 ,  H01L21/306

    CPC分类号： H01J37/32192

    摘要： There is provided a plasma processing apparatus capable of stably generating plasma by suppressing oscillation of a plasma potential, and capable of preventing contamination caused by sputtering a facing electrode made of metal. A high frequency bias power is applied to an electrode within a mounting table for mounting a target object thereon. An extended protrusion 60 is formed at an inner peripheral surface of a cover member 27. The extended protrusion 60 is formed toward a plasma generation space S and serves as a facing electrode facing an electrode 7 within a mounting table 5 with the plasma generation space S therebetween. A ratio of a surface area of the facing electrode with respect to that of an electrode for bias (facing electrode surface area/bias electrode area) is in a range of from about 1 to about 5.

    摘要翻译： 提供了一种能够通过抑制等离子体电位的振荡来稳定地产生等离子体的等离子体处理装置，并且能够防止溅射由金属制成的面对电极引起的污染。 将高频偏置功率施加到用于在其上安装目标物体的安装台内的电极。 在盖构件27的内周面形成有延伸突起60.延伸突起60朝向等离子体产生空间S形成，并且用作与安装台5内的电极7对置的面对电极，其中等离子体产生空间S 之间。 面对电极的表面积相对于用于偏置的电极（面对电极表面积/偏置电极面积）的表面积的比率在约1至约5的范围内。

    Pattern forming method and semiconductor device manufacturing method
    39.
    发明授权
    Pattern forming method and semiconductor device manufacturing method 有权
    图案形成方法和半导体器件制造方法

    公开(公告)号：US08119530B2

    公开(公告)日：2012-02-21

    申请号：US12521184

    申请日：2007-12-20

    申请人： Masaru Hori ,  Yoshiro Kabe ,  Toshihiko Shiozawa ,  Junichi Kitagawa

    发明人： Masaru Hori ,  Yoshiro Kabe ,  Toshihiko Shiozawa ,  Junichi Kitagawa

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/31662 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/31111 ,  H01L21/31116 ,  H01L29/66818

    摘要： A pattern forming method includes preparing a target object including silicon with an initial pattern formed thereon and having a first line width; performing a plasma oxidation process on the silicon surface inside a process chamber of a plasma processing apparatus and thereby forming a silicon oxide film on a surface of the initial pattern; and removing the silicon oxide film. The pattern forming method is arranged to repeatedly perform formation of the silicon oxide film and removal of the silicon oxide film so as to form an objective pattern having a second line width finer than the first line width on the target object.

    摘要翻译： 图案形成方法包括制备包括硅的目标物体，其中形成有初始图案并具有第一线宽度; 在等离子体处理装置的处理室内的硅表面上进行等离子体氧化处理，由此在初始图案的表面上形成氧化硅膜; 并除去氧化硅膜。 图案形成方法被配置为反复进行氧化硅膜的形成和氧化硅膜的去除，以形成目标物体上具有比第一线宽窄的第二线宽的物镜图案。