公开(公告)号：US20090017635A1

公开(公告)日：2009-01-15

申请号：US12171708

申请日：2008-07-11

申请人： Ashish Shah ,  Ganesh Balasubramanian ,  Dale R. Du Bois ,  Mark A. Fodor ,  Eui Kyoon Kim ,  Chiu Chan ,  Karthik Janakiraman ,  Thomas Nowak ,  Joseph C. Werner ,  Visweswaren Sivaramakrishnan ,  Mohamad Ayoub ,  Amir Al-Bayati ,  Jianhua Zhou

发明人： Ashish Shah ,  Ganesh Balasubramanian ,  Dale R. Du Bois ,  Mark A. Fodor ,  Eui Kyoon Kim ,  Chiu Chan ,  Karthik Janakiraman ,  Thomas Nowak ,  Joseph C. Werner ,  Visweswaren Sivaramakrishnan ,  Mohamad Ayoub ,  Amir Al-Bayati ,  Jianhua Zhou

IPC分类号： H01L21/302 ,  C23F1/00

CPC分类号： H01L21/68 ,  Y10S414/136

摘要： The present invention comprises an apparatus and method for etching at a substrate edge region. In one embodiment, the apparatus comprises a chamber having a process volume, a substrate support arranged inside the process volume and having a substrate support surface, a plasma generator coupled to the chamber and configured to supply an etching agent in a plasma phase to a peripheral region of the substrate support surface, and a gas delivery assembly coupled to a gas source for generating a radial gas flow over the substrate support surface from an approximately central region of the substrate support surface toward the peripheral region of the substrate support surface.

摘要翻译： 本发明包括用于在衬底边缘区域刻蚀的设备和方法。 在一个实施例中，该装置包括具有处理体积的腔室，布置在处理体积内的衬底支撑件并且具有衬底支撑表面，等离子体发生器，耦合到腔室并且被配置为将等离子体相中的蚀刻剂供应到外围 基板支撑表面的区域以及耦合到气体源的气体输送组件，用于从衬底支撑表面的大致中心区域朝向衬底支撑表面的周边区域产生在衬底支撑表面上的径向气流。

公开(公告)号：US20090014127A1

公开(公告)日：2009-01-15

申请号：US12106881

申请日：2008-04-21

申请人： Ashish Shah ,  Dale R. DuBois ,  Ganesh Balasubramanian ,  Mark A. Fodor ,  Eui Kyoon Kim ,  Chiu Chan ,  Karthik Janakiraman ,  Thomas Nowak ,  Joseph C. Werner ,  Visweswaren Sivaramakrishnan ,  Mohamad Ayoub ,  Amir Al-Bayati ,  Jianhua Zhou

发明人： Ashish Shah ,  Dale R. DuBois ,  Ganesh Balasubramanian ,  Mark A. Fodor ,  Eui Kyoon Kim ,  Chiu Chan ,  Karthik Janakiraman ,  Thomas Nowak ,  Joseph C. Werner ,  Visweswaren Sivaramakrishnan ,  Mohamad Ayoub ,  Amir Al-Bayati ,  Jianhua Zhou

IPC分类号： C23F1/02

CPC分类号： H01L21/6719 ,  H01J37/32366 ,  H01J2237/3321 ,  H01L21/67201 ,  H01L21/67207

摘要： Embodiments described herein relate to a substrate processing system that integrates substrate edge processing capabilities. Illustrated examples of the processing system include, without limitations, a factory interface, a loadlock chamber, a transfer chamber, and one or more twin process chambers having two or more processing regions that are isolatable from each other and share a common gas supply and a common exhaust pump. The processing regions in each twin process chamber include separate gas distribution assemblies and RF power sources to provide plasma at selective regions on a substrate surface in each processing region. Each twin process chamber is thereby configured to allow multiple, isolated processes to be performed concurrently on at least two substrates in the processing regions.

摘要翻译： 本文所述的实施例涉及集成衬底边缘处理能力的衬底处理系统。 处理系统的说明性示例包括但不限于工厂接口，负载锁定室，传送室和具有两个或更多个处理区域的一个或多个双处理室，其可彼此隔离并且共享公共气体供应和 普通排气泵。 每个双处理室中的处理区域包括单独的气体分配组件和RF功率源，以在每个处理区域的衬底表面上的选择性区域提供等离子体。 因此，每个双处理室被配置为允许在处理区域中的至少两个基板上同时执行多个隔离过程。

公开(公告)号：US20070295272A1

公开(公告)日：2007-12-27

申请号：US11680278

申请日：2007-02-28

申请人： Deenesh Padhi ,  Chiu Chan ,  Sudha Rathi ,  Ganesh Balasubramanian ,  Jianhua Zhou ,  Karthik Janakiraman ,  Martin J. Seamons ,  Visweswaren Sivaramakrishnan ,  Derek R. Witty ,  Hichem M'Saad

发明人： Deenesh Padhi ,  Chiu Chan ,  Sudha Rathi ,  Ganesh Balasubramanian ,  Jianhua Zhou ,  Karthik Janakiraman ,  Martin J. Seamons ,  Visweswaren Sivaramakrishnan ,  Derek R. Witty ,  Hichem M'Saad

IPC分类号： C23C16/00 ,  H01L21/00

CPC分类号： C23C16/45565 ,  C23C16/0254 ,  C23C16/26 ,  C23C16/4404

摘要： An article having a protective coating for use in semiconductor applications and methods for making the same are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.

摘要翻译： 提供了具有用于半导体应用的保护涂层的制品及其制造方法。 在某些实施例中，提供了在半导体处理室中使用的制品的铝表面的涂覆方法。 该方法包括提供处理室; 将物品放入处理室; 将包含碳源的第一气体流入所述处理室; 将包含氮源的第二气体流入所述处理室; 在室内形成等离子体; 以及在铝表面上沉积涂层材料。 在某些实施方案中，涂层材料包含无定形含碳氮层。 在某些实施例中，制品包括构造成将气体输送到处理室的喷头。

公开(公告)号：US20070207275A1

公开(公告)日：2007-09-06

申请号：US11508544

申请日：2006-08-23

申请人： Thomas Nowak ,  Kang Sub Yim ,  Sum-Yee Betty Tang ,  Kwangduk Douglas Lee ,  Vu Ngoc Tran Nguyen ,  Dennis Singleton ,  Martin Jay Seamons ,  Karthik Janakiraman ,  Ganesh Balasubramanian ,  Mohamed Ayoub ,  Wendy H. Yeh ,  Alexandros T. Demos ,  Hichem M'Saad

发明人： Thomas Nowak ,  Kang Sub Yim ,  Sum-Yee Betty Tang ,  Kwangduk Douglas Lee ,  Vu Ngoc Tran Nguyen ,  Dennis Singleton ,  Martin Jay Seamons ,  Karthik Janakiraman ,  Ganesh Balasubramanian ,  Mohamed Ayoub ,  Wendy H. Yeh ,  Alexandros T. Demos ,  Hichem M'Saad

IPC分类号： H05H1/24

CPC分类号： C23C16/4405 ,  B08B7/0035 ,  H01J37/32357 ,  H01J37/32862

摘要： Methods for cleaning semiconductor processing chambers used to process carbon-containing films, such as amorphous carbon films, barrier films comprising silicon and carbon, and low dielectric constant films including silicon, oxygen, and carbon are provided. The methods include using a remote plasma source to generate reactive species that clean interior surfaces of a processing chamber in the absence of RF power in the chamber. The reactive species are generated from an oxygen-containing gas, such as O2, and/or a halogen-containing gas, such as NF3. An oxygen-based ashing process may also be used to remove carbon deposits from the interior surfaces of the chamber before the chamber is exposed to the reactive species from the remote plasma source.

摘要翻译： 提供了用于处理用于处理含碳膜的半导体处理室的方法，例如非晶碳膜，包含硅和碳的阻挡膜以及包括硅，氧和碳的低介电常数膜。 这些方法包括使用远程等离子体源来产生在腔室中没有RF功率的情况下清洁处理室的内表面的反应物质。 反应性物质由含氧气体（例如O 2）和/或含卤素气体如NF 3 N产生。 在室暴露于来自远程等离子体源的反应物质之前，还可以使用氧基灰化方法从室的内表面去除碳沉积物。

公开(公告)号：US09337072B2

公开(公告)日：2016-05-10

申请号：US12950105

申请日：2010-11-19

申请人： Ganesh Balasubramanian ,  Amit Bansal ,  Eller Y. Juco ,  Mohamad Ayoub ,  Hyung-Joon Kim ,  Karthik Janakiraman ,  Sudha Rathi ,  Deenesh Padhi ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Amir Al-Bayati ,  Derek R. Witty ,  Hichem M'Saad ,  Anton Baryshnikov ,  Chiu Chan ,  Shuang Liu

发明人： Ganesh Balasubramanian ,  Amit Bansal ,  Eller Y. Juco ,  Mohamad Ayoub ,  Hyung-Joon Kim ,  Karthik Janakiraman ,  Sudha Rathi ,  Deenesh Padhi ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Amir Al-Bayati ,  Derek R. Witty ,  Hichem M'Saad ,  Anton Baryshnikov ,  Chiu Chan ,  Shuang Liu

IPC分类号： H02N13/00 ,  H01L21/683 ,  C23C16/52 ,  H01J37/32 ,  H01L21/67

CPC分类号： H01L21/6831 ,  C23C16/52 ,  H01J37/32431 ,  H01L21/67069 ,  H01L21/67253

摘要： The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.

摘要翻译： 本发明通常提供了用于监测和维持等离子体反应器中的基板的平坦度的方法和装置。 本发明的某些实施例提供了一种处理衬底的方法，包括将衬底定位在静电吸盘上，在静电吸盘中的电极与平行于静电吸盘的对置电极之间施加RF功率，将DC偏压施加到 静电卡盘中的电极将基板夹在静电卡盘上，并测量静电卡盘的假想阻抗。

公开(公告)号：US20120211164A1

公开(公告)日：2012-08-23

申请号：US13456080

申请日：2012-04-25

申请人： Ashish Shah ,  Dale R. DuBois ,  Ganesh Balasubramanian ,  Mark A. Fodor ,  Eui Kyoon Kim ,  Chiu Chan ,  Karthik Janakiraman ,  Thomas Nowak ,  Joseph C. Werner ,  Visweswaren Sivaramakrishnan ,  Mohamad Ayoub ,  Amir Al-Bayati ,  Jianhua Zhou

发明人： Ashish Shah ,  Dale R. DuBois ,  Ganesh Balasubramanian ,  Mark A. Fodor ,  Eui Kyoon Kim ,  Chiu Chan ,  Karthik Janakiraman ,  Thomas Nowak ,  Joseph C. Werner ,  Visweswaren Sivaramakrishnan ,  Mohamad Ayoub ,  Amir Al-Bayati ,  Jianhua Zhou

IPC分类号： H01L21/3065 ,  C23C16/458 ,  C23C16/50 ,  H01L21/306

CPC分类号： H01L21/6719 ,  H01J37/32366 ,  H01J2237/3321 ,  H01L21/67201 ,  H01L21/67207

摘要： Embodiments described herein relate to a substrate processing system that integrates substrate edge processing capabilities. Illustrated examples of the processing system include, without limitations, a factory interface, a loadlock chamber, a transfer chamber, and one or more twin process chambers having two or more processing regions that are isolatable from each other and share a common gas supply and a common exhaust pump. The processing regions in each twin process chamber include separate gas distribution assemblies and RF power sources to provide plasma at selective regions on a substrate surface in each processing region. Each twin process chamber is thereby configured to allow multiple, isolated processes to be performed concurrently on at least two substrates in the processing regions.

摘要翻译： 本文所述的实施例涉及集成衬底边缘处理能力的衬底处理系统。 处理系统的说明性示例包括但不限于工厂接口，负载锁定室，传送室和具有两个或更多个处理区域的一个或多个双处理室，其可彼此隔离并且共享公共气体供应和 普通排气泵。 每个双处理室中的处理区域包括单独的气体分配组件和RF功率源，以在每个处理区域的衬底表面上的选择性区域提供等离子体。 因此，每个双处理室被配置为允许在处理区域中的至少两个基板上同时执行多个隔离过程。

公开(公告)号：US20120205046A1

公开(公告)日：2012-08-16

申请号：US13456308

申请日：2012-04-26

申请人： Karthik Janakiraman ,  Thomas Nowak ,  Juan Carlos Rocha-Alvarez ,  Mark A. Fodor ,  Dale R. Du Bois ,  Amit Bansal ,  Mohamad A. Ayoub ,  Eller Y. Juco ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

发明人： Karthik Janakiraman ,  Thomas Nowak ,  Juan Carlos Rocha-Alvarez ,  Mark A. Fodor ,  Dale R. Du Bois ,  Amit Bansal ,  Mohamad A. Ayoub ,  Eller Y. Juco ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

IPC分类号： H01L21/3065

CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/458 ,  C23C16/4586 ,  C23C16/503 ,  C23C16/505 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32532 ,  H01J37/32541

摘要： An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.

摘要翻译： 提供了一种用于控制等离子体室中的等离子体放电的强度和分布的装置和方法。 在一个实施例中，成形电极被嵌入到基板支撑件中以在腔室内提供具有径向和轴向分量的电场。 在另一个实施例中，喷头组件的面板电极被隔离器分成区域，使不同的电压能够施加到不同的区域。 此外，一个或多个电极可以嵌入在腔室侧壁中。

公开(公告)号：US07867578B2

公开(公告)日：2011-01-11

申请号：US11427324

申请日：2006-06-28

申请人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

发明人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

IPC分类号： H05H1/24

CPC分类号： H01L21/3146 ,  C23C16/045 ,  C23C16/26 ,  C23C16/5096 ,  C23C16/56 ,  H01L21/31144

摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.

摘要翻译： 在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。 重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。 可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间​​以从中除去颗粒。

公开(公告)号：US07699935B2

公开(公告)日：2010-04-20

申请号：US12142402

申请日：2008-06-19

申请人： Ramprakash Sankarakrishnan ,  Dale DuBois ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

发明人： Ramprakash Sankarakrishnan ,  Dale DuBois ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

IPC分类号： C25F1/00

CPC分类号： F16K31/0655 ,  B08B5/00 ,  B08B7/0021 ,  C23C16/4405 ,  C23C16/4409 ,  C23C16/45561 ,  F16K1/221 ,  F16K1/224 ,  F16K31/06 ,  F16K31/088 ,  Y10S438/905

摘要： A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.

摘要翻译： 提供了一种用于清洁处理室的方法和设备。 在一个实施例中，提供了包括远程等离子体源和具有至少两个处理区域的处理室的处理室。 每个处理区域包括设置在处理区域中的基板支撑组件，配置成将气体提供到基板支撑组件上方的处理区域中的气体分配系统，以及构造成将气体提供到基板支撑组件下方的处理区域中的气体通道。 第一气体管道构造成使来自远程等离子体源的清洁剂通过每个处理区域中的气体分配组件流动，而第二气体管道构造成将一部分清洁剂从第一气体导管转移到第一气体导管的气体通道 每个处理区域。

公开(公告)号：US20100012273A1

公开(公告)日：2010-01-21

申请号：US12571677

申请日：2009-10-01

申请人： Ramprakash Sankarakrishnan ,  Dale DuBois ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

发明人： Ramprakash Sankarakrishnan ,  Dale DuBois ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

IPC分类号： C23F1/08

CPC分类号： F16K31/0655 ,  B08B5/00 ,  B08B7/0021 ,  C23C16/4405 ,  C23C16/4409 ,  C23C16/45561 ,  F16K1/221 ,  F16K1/224 ,  F16K31/06 ,  F16K31/088 ,  Y10S438/905

摘要： A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.

摘要翻译： 提供了一种用于清洁处理室的方法和设备。 在一个实施例中，提供了包括远程等离子体源和具有至少两个处理区域的处理室的处理室。 每个处理区域包括设置在处理区域中的基板支撑组件，配置成将气体提供到基板支撑组件上方的处理区域中的气体分配系统，以及构造成将气体提供到基板支撑组件下方的处理区域中的气体通道。 第一气体管道构造成使来自远程等离子体源的清洁剂通过每个处理区域中的气体分配组件流动，而第二气体管道构造成将一部分清洁剂从第一气体导管转移到第一气体导管的气体通道 每个处理区域。