公开(公告)号：US07215072B2

公开(公告)日：2007-05-08

申请号：US10806803

申请日：2004-03-23

Applicant: Keisuke Koga ,  Makoto Yamamoto ,  Akinori Shiota ,  Seigo Kanemaru ,  Masayoshi Nagao

Inventor： Keisuke Koga ,  Makoto Yamamoto ,  Akinori Shiota ,  Seigo Kanemaru ,  Masayoshi Nagao

IPC: H01J1/05

CPC classification number: H01J1/3044 ,  H01J9/025 ,  H01J2201/30407

Abstract: A stable field-emission electron source that does not suffer from a current drop even after a high-current density operation for a long time is provided. The field-emission electron source includes: a substrate; an insulating layer that is formed on the substrate and that has a plurality of openings; cathodes arranged at the respective openings in order to emit electron beams; a lead electrode formed on the insulating layer in order to control emission of electrons from the respective cathodes; and a surface-modifying layer formed on the surface of each of the cathodes emitting electrons, comprising a chemical bond between a cathode material composing the cathodes and a material different from the cathode material.

公开(公告)号：US20060066216A1

公开(公告)日：2006-03-30

申请号：US11233974

申请日：2005-09-23

Applicant: Keisuke Koga ,  Akinori Shiota ,  Makoto Yamamoto

Inventor： Keisuke Koga ,  Akinori Shiota ,  Makoto Yamamoto

IPC: H01J63/04 ,  H01J1/62

CPC classification number: H01J29/864 ,  H01J2329/00

Abstract: There is provided a field emission display that can achieve high brightness without increasing the anode voltage, and can realize high resolution by suppressing the occurrence of inter-pixel crosstalk resulting from light excited from the phosphor layers. A field emission display is constructed by a field emission electron source disposed in a vacuum container and a phosphor screen that is disposed in the vacuum container so as to be opposite to the field emission electron source and that has a plurality of recessed portions on its surface opposing to the field emission electron source, with phosphor layers being formed in the recessed portions An image is displayed by causing the phosphor layers to emit light by collision of electrons emitted from the field emission electron source. The inner wall surface of the recessed portions widens in a tapered shape from the bottom surface side toward the opening side, and adjacent recessed portions are divided by a rib structure made of a material having a light-absorbing effect (Black effect) with respect to light of the light-emitting wavelength. The phosphor layers are formed substantially all over the bottom surface and-the inner wall surface of the recessed portions.

Abstract translation: 提供一种能够在不增加阳极电压的情况下实现高亮度的场致发射显示器，并且可以通过抑制由荧光体层激发的光引起的像素间串扰的发生而实现高分辨率。 场发射显示器由设置在真空容器中的场发射电子源和设置在真空容器中以与场致发射电子源相对的荧光屏构成，并且在其表面上具有多个凹部 与场发射电子源相反，荧光层形成在凹部中通过使荧光体层通过场发射电子源发射的电子的碰撞而发光，从而显示图像。 凹部的内壁面从底面侧朝向开口侧变宽为锥形，相邻的凹部由具有光吸收效果（黑色效果）的材料构成的肋结构相对于 发光波长的光。 荧光体层基本上形成在整个底表面和凹陷部分的内壁表面上。

公开(公告)号：US06940218B2

公开(公告)日：2005-09-06

申请号：US10637404

申请日：2003-08-08

Applicant: Keisuke Koga ,  Toru Kawase ,  Kenichi Honda ,  Tetsuya Norikane

Inventor： Keisuke Koga ,  Toru Kawase ,  Kenichi Honda ,  Tetsuya Norikane

IPC: H01J1/304 ,  H01J1/62

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J1/3044 ,  H01J2201/30426 ,  H01J2201/30469

Abstract: A field-emission electron source element includes a cathode substrate, an insulating layer that is formed on the cathode substrate and has an opening, a lead electrode formed on the insulating layer, and an emitter formed in the opening. A surface layer of an electron emitting region of the emitter is doped with at least one reducing element selected from the group consisting of hydrogen and carbon monoxide. Further, an image display apparatus including the above-mentioned field-emission electron source element is provided. This makes it possible to obtain not only a stable field-emission electron source element that does not cause a current drop even after a high current density operation for a long time but also a high-performance image display apparatus that can maintain a stable display performance over a long period of time.

Abstract translation: 场发射电子源元件包括阴极基板，形成在阴极基板上并具有开口的绝缘层，形成在绝缘层上的引线电极和形成在开口中的发射极。 发射体的电子发射区的表面层掺杂有至少一种选自氢和一氧化碳的还原元素。 此外，提供了包括上述场发射电子源元件的图像显示装置。 这使得不仅可以获得即使在长时间的高电流密度操作之后也不会引起电流下降的稳定的场致发射电子源元件，而且可以获得可以保持稳定的显示性能的高性能图像显示装置 在很长一段时间内。

公开(公告)号：US06818915B1

公开(公告)日：2004-11-16

申请号：US09622734

申请日：2000-11-27

Applicant: Keisuke Koga

Inventor： Keisuke Koga

IPC: H01L2912

CPC classification number: H01L27/0705 ,  H01J1/3042 ,  H01J2201/319 ,  H01J2329/00

Abstract: The field emission type electron source device of the present invention includes: a field emission electron source portion including an extraction electrode provided on a p-type silicon substrate via an insulating film and having an opening portion at a position corresponding to a region where a cathode is provided; and a cathode portion provided on the p-type silicon substrate and at a position corresponding to the opening portion of the extraction portion; and an n-channel field effect transistor portion provided on the p-type silicon substrate, corresponding to the field emission electron source portion. The field emission electron source portion is provided in a drain region of the field effect transistor portion. A control voltage is applied to a gate electrode of the field effect transistor portion to control a field emission current from the field emission electron source portion. The drain region includes at least two wells having different impurity concentrations. Of the at least two wells, one well having a low impurity concentration is provided at an end of the drain region which contacts a channel region of the field effect transistor portion.

Abstract translation: 本发明的场致发射型电子源器件包括：场致发射电子源部，其包括通过绝缘膜设置在p型硅衬底上的引出电极，并且在对应于阴极的区域的位置处具有开口部分 被提供; 以及阴极部，设置在所述p型硅衬底上并且位于与所述提取部的开口部对应的位置; 以及设置在p型硅衬底上的对应于场发射电子源部分的n沟道场效应晶体管部分。 场致发射电子源部分设置在场效应晶体管部分的漏极区域中。 对场效应晶体管部分的栅电极施加控制电压，以控制来自场发射电子源部分的场致发射电流。 漏极区域包括至少两个具有不同杂质浓度的阱。 在至少两个阱中，在漏极区域的与场效应晶体管部分的沟道区域接触的端部处提供具有低杂质浓度的一个阱。

公开(公告)号：US06794822B2

公开(公告)日：2004-09-21

申请号：US10293539

申请日：2002-11-12

Applicant: Keisuke Koga ,  Toru Kawase ,  Masahide Yamauchi ,  Koji Fujii ,  Takashi Itoh

Inventor： Keisuke Koga ,  Toru Kawase ,  Masahide Yamauchi ,  Koji Fujii ,  Takashi Itoh

IPC: H01J2308

CPC classification number: H01J3/021 ,  H01J3/029 ,  H01J29/46 ,  H01J29/481 ,  H01J29/488

Abstract: A field emission electron source includes: a field emission array portion composed of an insulation layer with a plurality of apertures, which is formed on a substrate, an extraction electrode formed on the insulation layer, and a plurality of cathodes formed respectively on the substrate in the plurality of apertures; a cathode base for fixing the field emission array portion; and an electron lens portion composed of a plurality of electrode members having a function of accelerating and converging an electron beam emitted from the field emission array portion. An emission axis of the electron beam emitted from the field emission array portion has a predetermined angle with respect to an optical axis of the electron lens portion. Thus, the field emission array portion can be protected from impact caused by ions generated in the electron lens portion, thereby improving the life of a field emission electron source.

Abstract translation: 场发射电子源包括：场致发射阵列部分，其由具有多个孔的绝缘层组成，形成在衬底上，形成在绝缘层上的引出电极和分别形成在衬底上的多个阴极 多个孔; 用于固定场致发射阵列部分的阴极基座; 以及电子透镜部分，其由具有加速和会聚从场发射阵列部分发射的电子束的功能的多个电极部件组成。 从场发射阵列部分发射的电子束的发射轴相对于电子透镜部分的光轴具有预定的角度。 因此，可以防止场发射阵列部分免受在电子透镜部分中产生的离子的影响，从而提高场发射电子源的寿命。

公开(公告)号：US5434648A

公开(公告)日：1995-07-18

申请号：US195764

申请日：1994-02-10

Applicant: Keisuke Koga ,  Nobufumi Atoda ,  Tohru Itoh

Inventor： Keisuke Koga ,  Nobufumi Atoda ,  Tohru Itoh

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/027

CPC classification number: G03F9/70

Abstract: A proximity exposure method and apparatus therefor. Replications of mask patterns are carried out, wherein as a mask closely approaches a substrate, the displacement of the mask is detected, and the atmospheric pressure between the mask and the substrate, or around the side of the mask opposite the substrate is controlled so as to cancel the displacement of the mask. The apparatus includes positioning apparatus, a light source for exposing the mask pattern, displacement measuring means, and atmospheric pressure controlling means.

Abstract translation: 接近曝光方法及其装置。 执行掩模图案的复制，其中当作为掩模紧密接近基板时，检测掩模的位移，并且掩模和基板之间或围绕与基板相对的一侧的大气压力被控制为如 以取消掩模的位移。 该装置包括定位装置，用于曝光掩模图案的光源，位移测量装置和大气压力控制装置。

公开(公告)号：US5227268A

公开(公告)日：1993-07-13

申请号：US775215

申请日：1991-10-11

Applicant: Keisuke Koga ,  Juro Yasui

Inventor： Keisuke Koga ,  Juro Yasui

IPC: G03F1/22 ,  G03F9/00 ,  G21K1/06

CPC classification number: G03F1/22 ,  G03F9/7076 ,  G21K1/06

Abstract: An object of the sub- invention is to offer a X-ray mask capable of providing sufficiently strong alignment signal and to improve alignment accuracy. The X ray mask of the subject invention becomes the circuitry pattern and the alignment pattern on one main surface of the X-ray permeable film. Since the structure is also provided with a X-ray absorbant pattern, and this structure enables the laser beam without attenuation to illuminate the alignment pattern formed on the other surface of the X-ray permeable film, and by further optimizing the height of the alignment marks, a sufficiently strong alignment signal is obtained.

Abstract translation: 本发明的目的是提供能够提供足够强的对准信号并提高对准精度的X射线掩模。 本发明的X射线掩模成为X射线透过膜的一个主表面上的电路图案和对准图案。 由于该结构还设置有X射线吸收图案，并且该结构使得能够使激光束无衰减地照射形成在X射线透过膜的另一个表面上的取向图案，并且通过进一步优化对准高度 标记，获得足够强的对准信号。

公开(公告)号：US4870289A

公开(公告)日：1989-09-26

申请号：US248051

申请日：1988-09-23

Applicant: Takeo Sato ,  Shinichiro Aoki ,  Katsumasa Yamaguchi ,  Tadashi Kaneko ,  Noboru Nomura ,  Keisuke Koga ,  Kazuhiro Yamashita

Inventor： Takeo Sato ,  Shinichiro Aoki ,  Katsumasa Yamaguchi ,  Tadashi Kaneko ,  Noboru Nomura ,  Keisuke Koga ,  Kazuhiro Yamashita

IPC: G03F9/00 ,  H01L21/68

CPC classification number: G03F9/7065 ,  G03F9/7049 ,  H01L21/682

Abstract: A system for controlling the relation in position between a photomask and a wafer for use in manufacturing apparatus of a highly integrated circuit such as large scale integration (LSI). The position control system includes a coherent light source for generating two light beams which are different in frequency and polarizing direction from each other. The light beams from the coherent light source is introduced into a first diffraction grating and the diffracted light from the first diffraction grating selectively pass through a telecentric lens system and are led to second and third diffraction gratings respectively disposed on the photomask and the wafer. Light beat signals are obtained in correspondance with the diffracted light from the second and third difraction gratings and the position relation between the photomask and wafer is controlled on the basis of the phase difference between the obtained light beat signals which corresponds to the position difference between the photomask and the wafer.