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    PLACING TABLE STRUCTURE
    32.
    发明申请
    PLACING TABLE STRUCTURE 审中-公开
    配置表结构

    公开(公告)号：US20110263123A1

    公开(公告)日：2011-10-27

    申请号：US13057380

    申请日：2009-08-04

    申请人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Kaoru Yamamoto ,  Satoshi Taga

    发明人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Kaoru Yamamoto ,  Satoshi Taga

    IPC分类号： H01L21/3205 ,  C23C16/458

    CPC分类号： C23C16/52 ,  C23C16/16 ,  C23C16/45514 ,  C23C16/45521 ,  C23C16/45597 ,  C23C16/4585 ,  H01L21/67017 ,  H01L21/68785

    摘要： Provided is a placing table structure which is disposed in a processing container and has a subject to be processed thereon so as to form a thin film on the subject in the processing container by using raw material gas which generates thermal decomposition reaction having reversibility. The placing table structure is provided with a placing table for placing the subject to be processed on a placing surface, i.e., an upper surface of the placing table structure, and a decomposition restraint gas supply means which is arranged in the placing table for the purpose of supplying decomposition restraint gas, which restraints thermal decomposition of the raw material gas, toward a peripheral section of the subject placed on the placing surface of the placing table.

    摘要翻译： 提供了一种放置台结构，其设置在处理容器中并且要对其进行处理，以便通过使用产生具有可逆性的热分解反应的原料气体在处理容器中在被检体上形成薄膜。 放置台结构设置有用于将待处理对象放置在放置表面（即，放置台结构的上表面）的放置台和设置在放置台中的分解限制气体供应装置 提供限制原料气体的热分解的分解约束气体朝向放置在放置台的放置面的被处理体的周边部分。

    SUBSTRATE PROCESSING METHOD AND FABRICATION PROCESS OF A SEMICONDUCTOR DEVICE
    33.
    发明申请
    SUBSTRATE PROCESSING METHOD AND FABRICATION PROCESS OF A SEMICONDUCTOR DEVICE 有权
    半导体器件的基板处理方法和制造工艺

    公开(公告)号：US20070134907A1

    公开(公告)日：2007-06-14

    申请号：US11673628

    申请日：2007-02-12

    申请人： Taro Ikeda ,  Tadahiro Ishizaka ,  Masamichi Hara

    发明人： Taro Ikeda ,  Tadahiro Ishizaka ,  Masamichi Hara

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76807 ,  H01L21/76814

    摘要： A method of fabricating a semiconductor device includes the steps of forming a via-hole in an interlayer insulation film such that a metal interconnection pattern formed underneath the interlayer insulation film is exposed at a bottom of the via-hole, forming a conductive barrier film on the interlayer insulation film so as to cover a sidewall surface of the via-hole and the exposed metal interconnection pattern in conformity with a shape of the via-hole and forming a metal film on the conductive barrier film, wherein there is provided a preprocessing step, after the step of forming the via-hole but before the step of forming the conductive barrier film, of processing the interlayer insulation film including the sidewall surface of the via-hole and a bottom surface of the via-hole, with plasma containing hydrogen having energy not causing sputtering of the metal interconnection pattern.

    摘要翻译： 一种制造半导体器件的方法包括以下步骤：在层间绝缘膜中形成通孔，使得形成在层间绝缘膜下方的金属互连图案在通孔的底部露出，形成导电阻挡膜 层间绝缘膜，以覆盖通孔的侧壁表面和暴露的金属互连图案，与通孔的形状一致并在导电阻挡膜上形成金属膜，其中提供了预处理步骤 在形成导电阻挡膜的步骤之后，在形成导电阻挡膜的步骤之后，对包括通孔的侧壁表面和通孔的底面的层间绝缘膜进行处理，其中包含氢的等离子体 具有不会引起金属互连图案的溅射的能量。

    Film forming apparatus and film forming method
    34.
    发明申请
    Film forming apparatus and film forming method 有权

    公开(公告)号：US20060032444A1

    公开(公告)日：2006-02-16

    申请号：US11198193

    申请日：2005-08-08

    申请人： Masamichi Hara

    发明人： Masamichi Hara

    IPC分类号： C23C16/00

    CPC分类号： C23C16/45542 ,  C23C16/4481 ,  C23C16/45525 ,  C23C16/45544

    摘要： A thin film formation apparatus that introduces, in a first operational phase thereof, a source gas into a processing vessel capable of being evacuated and accommodating a substrate to be processed, and forms a thin film on the substrate by causing a reaction in the introduced source gas. The apparatus comprises a source gas producing part producing the source gas by vaporizing a source material of solid or liquid, a source gas supplying path forwarding the source gas produced in the source gas producing part to the processing vessel, a first open/close valve provided on the source gas supplying path, the first open/close valve taking an opened state in the first operational phase, and a carrier gas supply part supplying a carrier gas to the source gas producing part such that the source gas fills a part of the source gas supplying path at an upstream side of the first open/close valve and the source gas producing part with a quantity exceeding a predetermined value, immediately before the first open/close valve becoming an opened state.

    Substrate processing method and fabrication process of a semiconductor device
    35.
    发明申请
    Substrate processing method and fabrication process of a semiconductor device 有权
    半导体器件的基板处理方法和制造工艺

    公开(公告)号：US20050272247A1

    公开(公告)日：2005-12-08

    申请号：US11142457

    申请日：2005-06-02

    申请人： Taro Ikeda ,  Tadahiro Ishizaka ,  Masamichi Hara

    发明人： Taro Ikeda ,  Tadahiro Ishizaka ,  Masamichi Hara

    IPC分类号： H01L21/768 ,  H01L21/285 ,  H01L21/4763 ,  H01L23/522

    CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76807 ,  H01L21/76814

    摘要： A method of fabricating a semiconductor device includes the steps of forming a via-hole in an interlayer insulation film such that a metal interconnection pattern formed underneath the interlayer insulation film is exposed at a bottom of the via-hole, forming a conductive barrier film on the interlayer insulation film so as to cover a sidewall surface of the via-hole and the exposed metal interconnection pattern in conformity with a shape of the via-hole. and forming a metal film on the conductive barrier film, wherein there is provided a preprocessing step, after the step of forming the via-hole but before the step of forming the conductive barrier film, of processing the interlayer insulation film including the sidewall surface of the via-hole and a bottom surface of the via-hole, with plasma containing hydrogen having energy not causing sputtering of the metal interconnection pattern.

    摘要翻译： 一种制造半导体器件的方法包括以下步骤：在层间绝缘膜中形成通孔，使得形成在层间绝缘膜下方的金属互连图案在通孔的底部露出，形成导电阻挡膜 层间绝缘膜，以覆盖通孔的侧壁表面和暴露的金属互连图案，与通孔的形状一致。 在所述导电阻挡膜上形成金属膜，其中，在形成所述导通阻挡膜的步骤之后，在形成所述通孔的步骤之后，提供预处理步骤，处理包括所述侧壁表面的层间绝缘膜 通孔和通孔的底表面，其中含有氢的等离子体具有不引起金属互连图案的溅射的能量。

    Deposition device
    36.
    发明授权
    Deposition device 有权
    沉积装置

    公开(公告)号：US09404180B2

    公开(公告)日：2016-08-02

    申请号：US13634314

    申请日：2011-03-08

    申请人： Masamichi Hara ,  Kaoru Yamamoto ,  Atsushi Gomi ,  Satoshi Taga

    发明人： Masamichi Hara ,  Kaoru Yamamoto ,  Atsushi Gomi ,  Satoshi Taga

    IPC分类号： C23C16/455 ,  C23C16/16 ,  C23C16/44 ,  H01L21/285

    CPC分类号： C23C16/455 ,  C23C16/16 ,  C23C16/4412 ,  C23C16/45591 ,  C23C16/45593 ,  H01L21/28556

    摘要： The disclosed deposition device for forming a thin film using a starter gas comprising an organic metal compound is provided with: a processing container 22; a mounting platform 28 which has a heater 34 for heating the workpiece W; a gas introduction mechanism 80 which introduces the starter gas toward the area more exterior than the outer peripheral end of the workpiece W on the mounting platform 28; an internal partition wall 90 which is disposed such that the lower end of said processing space contacts the mounting platform 28 to form gas outlets 92 between the lower portion of the space and the edges of the mounting platform 28; and a orifice forming member 96 which extends radially inward toward the mounting platform 28 and forms an orifice 98 communicating with the gas outlet 92.

    摘要翻译： 所公开的使用包含有机金属化合物的起动气体形成薄膜的沉积装置设置有：处理容器22; 安装平台28，其具有用于加热工件W的加热器34; 气体引入机构80，其将起动气体引导到在安装平台28上比工件W的外周端更外侧的区域; 内部分隔壁90设置成使得所述处理空间的下端与安装平台28接触，以在空间的下部与安装平台28的边缘之间形成气体出口92; 以及孔径形成构件96，其朝向安装平台28径向向内延伸并且形成与气体出口92连通的孔口98。

    Method of integrating PEALD Ta-containing films into Cu metallization
    40.
    发明授权
    Method of integrating PEALD Ta-containing films into Cu metallization 有权
    将含有PEALD的含Ta的膜整合到Cu金属化中的方法

    公开(公告)号：US07959985B2

    公开(公告)日：2011-06-14

    申请号：US11378263

    申请日：2006-03-20

    申请人： Tadahiro Ishizaka ,  Tsukasa Matsuda ,  Masamichi Hara ,  Jacques Faguet ,  Yasushi Mizusawa

    发明人： Tadahiro Ishizaka ,  Tsukasa Matsuda ,  Masamichi Hara ,  Jacques Faguet ,  Yasushi Mizusawa

    IPC分类号： C23C16/00 ,  H05H1/00

    CPC分类号： C23C16/45542 ,  C23C16/32 ,  C23C16/36 ,  C23C16/509 ,  C23C16/56

    摘要： A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, depositing a TaC or TaCN film on the substrate using the PEALD process, and modifying the deposited TaC or TaCN film by exposing the deposited TaC or TaCN film to plasma excited hydrogen or atomic hydrogen or a combination thereof in order to remove carbon from at least the plasma exposed portion of the deposited TaCN film. The method further includes forming a metal film on the modified TaCN film, where the modified TaCN film provides stronger adhesion to the metal film than the deposited TaCN film. According to one embodiment, a TaCN film is deposited from alternating exposures of TAIMATA and plasma excited hydrogen.

    摘要翻译： 用于形成可用作Cu金属化阻挡膜的改性TaC或TaCN膜的方法。 该方法包括将基板设置在等离子体增强原子层沉积（PEALD）系统的处理室中，其被配置为执行PEALD工艺，使用PEALD工艺在基板上沉积TaC或TaCN膜，以及修改沉积的TaC或TaCN膜 通过将沉积的TaC或TaCN膜暴露于等离子体激发的氢或原子氢或其组合，以便从至少沉积的TaCN膜的等离子体暴露部分除去碳。 该方法还包括在改性的TaCN膜上形成金属膜，其中改性的TaCN膜比沉积的TaCN膜提供比金属膜更强的附着力。 根据一个实施方案，通过TAIMATA和等离子体激发氢的交替曝光沉积TaCN膜。