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31.发明授权
公开(公告)号：US6039834A
公开(公告)日：2000-03-21
申请号：US811627
申请日：1997-03-05
申请人： Tsutomu Tanaka , Mukul Kelkar , Kevin Fairbairn , Hari Ponnekanti , David Cheung
发明人： Tsutomu Tanaka , Mukul Kelkar , Kevin Fairbairn , Hari Ponnekanti , David Cheung
IPC分类号： H05H1/46 , C23C16/50 , C23C16/511 , C23C16/52 , H01J37/32 , H01L21/205 , H01L21/31 , H05H1/00
CPC分类号： H01J37/32862 , C23C16/511 , C23C16/52 , H01J37/32192 , H01J37/32357
摘要： An apparatus and methods for an upgraded CVD system that provides a plasma for efficiently cleaning a chamber, according to a specific embodiment. Etching or depositing a layer onto a substrate also may be achieved using the upgraded CVD system of the present invention. In a specific embodiment, the present invention provides an easily removable, conveniently handled, and relatively inexpensive microwave plasma source as a retrofit for or a removable addition to existing CVD apparatus. In a preferred embodiment, the remote microwave plasma source efficiently provides a plasma without need for liquid-cooling the plasma applicator tube. In another embodiment, the present invention provides an improved CVD apparatus or retrofit of existing CVD apparatus capable of producing a plasma with the ability to efficiently clean the chamber when needed.
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32.发明授权High density plasma CVD reactor with combined inductive and capacitive coupling 失效具有组合电感和电容耦合的高密度等离子体CVD反应堆
公开(公告)号：US5865896A
公开(公告)日：1999-02-02
申请号：US766053
申请日：1996-12-16
申请人： Romuald Nowak , Kevin Fairbairn , Fred C. Redeker
发明人： Romuald Nowak , Kevin Fairbairn , Fred C. Redeker
CPC分类号： H01J37/32091 , H01J37/321 , H01J37/3244
摘要： The invention is embodied in a plasma reactor having a vacuum chamber with a cylindrical side portion and a ceiling at a certain height above the top of the cylindrical side portion, a wafer-holding pedestal near the bottom of the vacuum chamber, gas injection ports near the cylindrical side portion and a vacuum pump, the reactor including a generally planar disk-shaped conductive ceiling electrode adjacent the ceiling, a helical coil antenna having a bottom winding near the top of the cylindrical side portion and a top winding generally corresponding to the second diameter near the planar disk-shaped conductive ceiling electrode, the helical coil antenna substantially spanning the height between the top of the cylindrical side portion and the ceiling, and a switch for individually connecting each one of the coil antenna, the ceiling electrode and the wafer pedestal to one of (a) a respective RF power source or (b) ground or (c) a floating potential (i.e., unconnected to any potential source). The invention is also embodied in a plasma reactor having a vacuum chamber, a wafer-holding pedestal near the bottom of the vacuum chamber, gas injection ports and a vacuum pump, the reactor including a conductive ceiling electrode at the top of the chamber, a coil antenna having a top generally coplanar with the ceiling electrode and a base generally coinciding with a circumference of the vacuum chamber, and a switch for individually connecting each one of the coil antenna, the ceiling electrode and the wafer pedestal to one of (a) a respective RF power source, or (b) ground or (c) a floating potential. In one embodiment, the reactor is a chemical vapor depostion plasma reactor.
摘要翻译： 本发明体现在具有真空室的等离子体反应器中，该真空室具有圆柱形侧部和位于圆柱形侧部顶部上方一定高度的顶部，靠近真空室底部的晶片保持基座，靠近气体注入口的气体注入口 圆柱形侧部和真空泵，反应器包括与天花板相邻的大致平面的盘状导电顶板电极，具有靠近圆柱形侧部顶部的底部绕组的螺旋线圈天线和通常对应于第二 直径靠近平面盘状导电天花板电极，螺旋线圈天线基本跨越圆柱形侧部的顶部与天花板之间的高度，以及用于单独连接线圈天线，天花板电极和晶片中的每一个的开关 （a）相应的RF电源或（b）接地或（c）浮动电位之一（即，未连接到任何电位 资源）。 本发明还体现在具有真空室，靠近真空室底部的晶片保持基座，气体注入端口和真空泵的等离子体反应器中，该反应器包括位于室顶部的导电天花板电极， 线圈天线具有与天花板电极大致共面的顶部和大致与真空室的圆周重合的基座，以及用于将线圈天线，天花板电极和晶片基座中的每一个单独连接到（a） 相应的RF电源，或（b）接地或（c）浮动电位。 在一个实施方案中，反应器是化学气相沉积等离子体反应器。
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公开(公告)号：US5844195A
公开(公告)日：1998-12-01
申请号：US751486
申请日：1996-11-18
IPC分类号： C23C14/56 , C23C16/50 , C23C16/511 , H01L21/00 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , B23K10/00
CPC分类号： H01L21/67017
摘要： The present invention provides a remote plasma source mountable on a process chamber and connectable on one end to a gas inletting system and on the other end to a gas distribution system disposed in a process chamber. Preferably, a conventional microwave generator is utilized to deliver microwaves into a remote chamber to excite a gas passed therethrough into an excited state.
摘要翻译： 本发明提供一种远程等离子体源，其可安装在处理室上，并且一端可连接到气体入口系统，另一端可连接到设置在处理室中的气体分配系统。 优选地，使用传统的微波发生器将微波传送到远程室中以将通过其中的气体激发到激发状态。
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公开(公告)号：US5697748A
公开(公告)日：1997-12-16
申请号：US205711
申请日：1994-03-03
IPC分类号： H01L21/677 , H01L21/683 , B65G65/00
CPC分类号： H01L21/67748 , H01L21/67739 , H01L21/6838 , Y10S414/137
摘要： A semiconductor wafer processing system for processing wafers from a wafer storage cassette includes a wafer transfer chamber; a wafer storage elevator within the transfer chamber; one or more wafer processing chambers; and a wafer transfer apparatus for transferring a wafer between a standard storage cassette adjacent and outside the transfer chamber and the elevator, and between the elevator and the processing chamber. The storage chamber pressure varies between atmospheric when accepting wafers from outside, and a subatmospheric pressure when transferring wafers to or from a processing chamber. The transfer apparatus includes a robot arm; a thin flat wafer carrying blade at the leading end of the robot arm configured for engaging a wafer from the storage cassette or the elevator; and a wafer support tray configured for removable engagement with the blade and for engaging and positively positioning a wafer from the elevator, or a support pedestal within a processing chamber. When the transfer apparatus moves a wafer between the elevator and a processing chamber in an evacuated environment, the tray is engaged with the blade and helps retain the wafer during transit. When wafers are transferred between the cassette and the elevator at atmospheric pressure the tray is disengaged from the blade and placed in a rest position on the elevator, and the wafer transfer is performed by means of the blade alone with a vacuum pick integral to the blade. The blade includes upper and lower halves together defining vacuum channels and capacitive position sensors.
摘要翻译： 用于从晶片存储盒处理晶片的半导体晶片处理系统包括：晶片传送室; 传送室内的晶片存储电梯; 一个或多个晶片处理室; 以及晶片传送装置，用于在与传送室和电梯之间以及电梯和处理室之间的标准存储盒之间传送晶片。 当从外部接收晶片时，储存室压力在大气压之间变化，并且在将晶片转移到处理室或从处理室转移时的低于大气压。 传送装置包括机器人臂; 在所述机器人臂的前端处的薄平板晶片承载叶片，其被配置用于从所述存储盒或电梯接合晶片; 以及晶片支撑托盘，其构造成用于与所述刀片可拆卸地接合并且用于从所述电梯或处理腔室内的支撑座接合和积极地定位晶片。 当传送装置在真空环境中在电梯和处理室之间移动晶片时，托盘与刀片接合并有助于在运输过程中保持晶片。 当晶片在大气压下在盒和电梯之间转移时，托盘与叶片脱离并放置在电梯上的静止位置，并且通过单独的叶片执行晶片传送，该真空拾取器与叶片成一整体 。 叶片包括一起限定真空通道和电容位置传感器的上半部和下半部。
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公开(公告)号：US5636964A
公开(公告)日：1997-06-10
申请号：US438670
申请日：1995-05-10
IPC分类号： B65G49/07 , H01L21/677 , H01L21/683 , B65G65/00
CPC分类号： H01L21/6838 , H01L21/67742 , H01L21/67748 , Y10S294/907 , Y10S414/137 , Y10S414/139 , Y10S414/141
摘要： A semiconductor wafer processing system for processing wafers from a wafer storage cassette includes a wafer transfer chamber; a wafer storage elevator within the transfer chamber; one or more wafer processing chambers; and a wafer transfer apparatus for transferring a wafer between a standard storage cassette adjacent and outside the transfer chamber and the elevator, and between the elevator and the processing chamber. The storage chamber pressure varies between atmospheric when accepting wafers from outside, and a subatmospheric pressure when transferring wafers to or from a processing chamber. The transfer apparatus includes a robot arm; a thin flat wafer carrying blade at the leading end of the robot arm configured for engaging a wafer from the storage cassette or the elevator; and a wafer support tray configured for removable engagement with the blade and for engaging and positively positioning a wafer from the elevator, or a support pedestal within a processing chamber. When the transfer apparatus moves a wafer between the elevator and a processing chamber in an evacuated enviroment, the tray is engaged with the blade and helps retain the wafer during transit. When wafers are transferred between the cassette and the elevator at atmospheric pressure the tray is disengaged from the blade and placed in a rest position on the elevator, and the wafer transfer is performed by means of the blade alone with a vacuum pick integral to the blade. The blade includes upper and lower halves together defining vacuum channels and capacitive position sensors.
摘要翻译： 用于从晶片存储盒处理晶片的半导体晶片处理系统包括：晶片传送室; 传送室内的晶片存储电梯; 一个或多个晶片处理室; 以及晶片传送装置，用于在与传送室和电梯之间以及电梯和处理室之间的标准存储盒之间传送晶片。 当从外部接收晶片时，储存室压力在大气压之间变化，并且在将晶片转移到处理室或从处理室转移时的低于大气压。 传送装置包括机器人臂; 在所述机器人臂的前端处的薄平板晶片承载叶片，其被配置用于从所述存储盒或电梯接合晶片; 以及晶片支撑托盘，其构造成用于与所述刀片可拆卸地接合并且用于从所述电梯或处理腔室内的支撑座接合和积极地定位晶片。 当传送装置在电梯和处理室之间移动晶片在真空环境中时，托盘与刀片接合并有助于在运输过程中保持晶片。 当晶片在大气压下在盒和电梯之间转移时，托盘与叶片脱离并放置在电梯上的静止位置，并且通过单独的叶片执行晶片传送，该真空拾取器与叶片成一整体 。 叶片包括一起限定真空通道和电容位置传感器的上半部和下半部。
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公开(公告)号：US5556147A
公开(公告)日：1996-09-17
申请号：US438328
申请日：1995-05-10
IPC分类号： B65G49/07 , H01L21/677 , H01L21/683 , B25J15/06
CPC分类号： H01L21/6838 , H01L21/67742 , H01L21/67748 , Y10S294/907 , Y10S414/137 , Y10S414/139 , Y10S414/141
摘要： A semiconductor wafer processing system for processing wafers from a wafer storage cassette includes a wafer transfer chamber; a wafer storage elevator within the transfer chamber; one or more wafer processing chambers; and a wafer transfer apparatus for transferring a wafer between a standard storage cassette adjacent and outside the transfer chamber and the elevator, and between the elevator and the processing chamber. The environment of the storage chamber varies in pressure between atmospheric when accepting wafers from outside, and a subatmospheric pressure when transferring wafers to or from a processing chamber. The transfer apparatus includes a robot arm; a thin flat wafer carrying blade at the leading end of the robot arm and configured for engaging a wafer from the storage cassette or the elevator; and a wafer support tray which is configured for removable engagement with the blade and for engaging and positively positioning a wafer from the elevator, or a support pedestal within a processing chamber. When the transfer apparatus moves a wafer between the elevator and a processing chamber in an evacuated environment, the tray is engaged with the blade and helps retain the wafer during transit. When wafers are transferred between the cassette and the elevator at atmospheric pressure the tray is disengaged from the blade and placed in a rest position on the elevator, and the wafer transfer is performed by means of the blade alone with a vacuum pick integral to the blade. The blade includes upper and lower halves together defining vacuum channels and capacitive position sensors.
摘要翻译： 用于从晶片存储盒处理晶片的半导体晶片处理系统包括：晶片传送室; 传送室内的晶片存储电梯; 一个或多个晶片处理室; 以及晶片传送装置，用于在与传送室和电梯之间以及电梯和处理室之间的标准存储盒之间传送晶片。 当从外部接收晶片时，储存室的环境在大气压之间变化，并且在将晶片转移到处理室或从处理室转移时的低于大气压。 传送装置包括机器人臂; 在所述机器人臂的前端处的薄平板晶片承载叶片，并且构造成用于从所述存储盒或电梯接合晶片; 以及晶片支撑托盘，其构造成用于与所述刀片可移除接合，并且用于接合并且将来自所述升降机的晶片或将处理室内的支撑基座正确地定位。 当传送装置在真空环境中在电梯和处理室之间移动晶片时，托盘与刀片接合并有助于在运输过程中保持晶片。 当晶片在大气压下在盒和电梯之间转移时，托盘与叶片脱离并放置在电梯上的静止位置，并且通过单独的叶片执行晶片传送，该真空拾取器与叶片成一整体 。 叶片包括一起限定真空通道和电容位置传感器的上半部和下半部。
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37.发明授权Method and apparatus for preventing cross contamination of species during the processing of semiconductor wafers 失效在半导体晶片加工过程中防止物种交叉污染的方法和装置
公开(公告)号：US4937206A
公开(公告)日：1990-06-26
申请号：US377692
申请日：1989-07-10
申请人： Peter R. Jaffe , Kevin Fairbairn
发明人： Peter R. Jaffe , Kevin Fairbairn
IPC分类号： H01J37/20 , H01J37/317 , H01L21/265 , H01L21/266 , H01L21/302
CPC分类号： H01L21/302 , H01L21/265 , Y10S148/083 , Y10S438/905 , Y10S438/908 , Y10T29/41
摘要： A method for preventing cross-contamination of semiconductor wafers during processing comprising covering a surface portion of a support assembly with a process compatible material, engaging a semiconductor wafer with the support assembly, processing the wafer while it is engaged with the support member, and removing the process compatible material from the support assembly after said material is considered to be contaminated. A shield particularly adapted for this process includes a shield portion made from a process compatible material and a process-compatible adhesive for attaching the shield portion to the support assembly.
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公开(公告)号：US07655092B2
公开(公告)日：2010-02-02
申请号：US10680656
申请日：2003-10-06
CPC分类号： H01L21/67167 , C23C16/4412 , C23C16/54 , H01L21/67017 , H01L21/67173 , H01L21/6719 , H01L21/67196 , H01L21/67201
摘要： The present invention provides an apparatus for vacuum processing generally comprising an enclosure having a plurality of isolated chambers formed therein, a gas distribution assembly disposed in each processing chamber, a gas source connected to the plurality of isolated chambers, and a power supply connected to each gas distribution assembly.
摘要翻译： 本发明提供了一种用于真空处理的设备，其通常包括具有形成在其中的多个隔离室的外壳，设置在每个处理室中的气体分配组件，连接到多个隔离室的气源，以及连接到每个 气体分配组件
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公开(公告)号：US20050112509A1
公开(公告)日：2005-05-26
申请号：US11019860
申请日：2004-12-21
申请人： Kevin Fairbairn , Michael Rice , Timothy Weidman , Christopher Ngai , Ian Latchford , Christopher Bencher , Yuxiang Wang
发明人： Kevin Fairbairn , Michael Rice , Timothy Weidman , Christopher Ngai , Ian Latchford , Christopher Bencher , Yuxiang Wang
IPC分类号： H01L21/20 , H01L21/027 , H01L21/28 , H01L21/308 , H01L21/311 , H01L21/314 , H01L21/316 , H01L21/3213 , H01L21/768 , G03F7/16
CPC分类号： H01L21/76829 , C23C16/26 , H01L21/0276 , H01L21/28035 , H01L21/3081 , H01L21/3088 , H01L21/31138 , H01L21/31144 , H01L21/3146 , H01L21/31612 , H01L21/32137 , H01L21/76802 , H01L21/76807
摘要： A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.
摘要翻译： 一种使用无定形碳膜形成集成电路的方法。 无定形碳膜通过热分解包含烃化合物和惰性气体的气体混合物而形成。 无定形碳膜与集成电路制造工艺兼容。 在一个集成电路制造工艺中，非晶碳膜用作硬掩模。 在另一个集成电路制造工艺中，无定形碳膜是用于深紫外（DUV）光刻的抗反射涂层（ARC）。 在又一集成电路制造工艺中，多层无定形碳抗反射涂层用于DUV光刻。
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公开(公告)号：US06635115B1
公开(公告)日：2003-10-21
申请号：US09575025
申请日：2000-05-19
IPC分类号： C23C1600
CPC分类号： H01L21/67167 , C23C16/4412 , C23C16/54 , H01L21/67017 , H01L21/67173 , H01L21/6719 , H01L21/67196 , H01L21/67201
摘要： The present invention provides an apparatus for vacuum processing generally comprising an enclosure having a plurality of isolated chambers formed therein, a gas distribution assembly disposed in each processing chamber, a gas source connected to the plurality of isolated chambers, and a power supply connected to each gas distribution assembly.
摘要翻译： 本发明提供了一种用于真空处理的设备，其通常包括具有形成在其中的多个隔离室的外壳，设置在每个处理室中的气体分配组件，连接到多个隔离室的气源，以及连接到每个 气体分配组件
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