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18 条记录 (耗时 0.034 秒)

    DOPANT ACTIVATION IN DOPED SEMICONDUCTOR SUBSTRATES
    7.
    发明申请
    DOPANT ACTIVATION IN DOPED SEMICONDUCTOR SUBSTRATES 失效
    掺杂半导体衬底中的掺杂活性

    公开(公告)号：US20080057740A1

    公开(公告)日：2008-03-06

    申请号：US11844810

    申请日：2007-08-24

    申请人： Jeffrey Munro ,  Srinivas Nemani ,  Young Lee ,  Marlon Menezes ,  Christopher Bencher ,  Vijay Parihar

    发明人： Jeffrey Munro ,  Srinivas Nemani ,  Young Lee ,  Marlon Menezes ,  Christopher Bencher ,  Vijay Parihar

    IPC分类号： H01L21/00

    CPC分类号： H01L21/268 ,  H01L21/26513

    摘要： Methods are disclosed for activating dopants in a doped semiconductor substrate. A carbon precursor is flowed into a substrate processing chamber within which the doped semiconductor substrate is disposed. A plasma is formed from the carbon precursor in the substrate processing chamber. A carbon film is deposited over the substrate with the plasma. A temperature of the substrate is maintained while depositing the carbon film less than 500° C. The deposited carbon film is exposed to electromagnetic radiation for a period less than 10 ms, and has an extinction coefficient greater than 0.3 at a wavelength comprised by the electromagnetic radiation.

    摘要翻译： 公开了用于激活掺杂半导体衬底中的掺杂剂的方法。 碳前体流入其中设置掺杂半导体衬底的衬底处理室。 在基板处理室中由碳前体形成等离子体。 用等离子体沉积在衬底上的碳膜。 在沉积低于500℃的碳膜的同时保持基板的温度。沉积的碳膜暴露于电磁辐射小于10ms的时间段，并且在电磁波包括的波长处具有大于0.3的消光系数 辐射。

    Removable amorphous carbon cmp stop
    8.
    发明申请
    Removable amorphous carbon cmp stop 失效
    可拆卸非晶碳cmp停止

    公开(公告)号：US20070054500A1

    公开(公告)日：2007-03-08

    申请号：US11594626

    申请日：2006-11-08

    申请人： Christopher Bencher

    发明人： Christopher Bencher

    IPC分类号： H01L21/31

    CPC分类号： H01L21/76826 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/3146 ,  H01L21/31633 ,  H01L21/3212 ,  H01L21/7681 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/7684

    摘要： A method is provided for processing a substrate including removing amorphous carbon material disposed on a low k dielectric material with minimal or reduced defect formation and minimal dielectric constant change of the low k dielectric material. In one aspect, the invention provides a method for processing a substrate including depositing at least one dielectric layer on a substrate surface, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less, forming amorphous carbon material on the at least one dielectric layer, and removing the one or more amorphous carbon layers by exposing the one or more amorphous carbon layers to a plasma of a hydrogen-containing gas.

    摘要翻译： 提供了一种用于处理衬底的方法，包括去除设置在低k电介质材料上的无定形碳材料，具有最小或减少的缺陷形成和低k电介质材料的最小介电常数变化。 在一个方面，本发明提供了一种处理衬底的方法，包括在衬底表面上沉积至少一个电介质层，其中介电层包括硅，氧和碳，并且具有约3或更小的介电常数，形成无定形碳 在所述至少一个电介质层上的材料，以及通过将所述一个或多个非晶碳层暴露于含氢气体的等离子体来去除所述一个或多个非晶碳层。

    Silicon carbide deposition for use as a low-dielectric constant anti-reflective coating
    10.
    发明授权
    Silicon carbide deposition for use as a low-dielectric constant anti-reflective coating 有权
    碳化硅沉积用作低介电常数抗反射涂层

    公开(公告)号：US06635583B2

    公开(公告)日：2003-10-21

    申请号：US09219945

    申请日：1998-12-23

    申请人： Christopher Bencher ,  Joe Feng ,  Mei-Yee Shek ,  Chris Ngai ,  Judy Huang

    发明人： Christopher Bencher ,  Joe Feng ,  Mei-Yee Shek ,  Chris Ngai ,  Judy Huang

    IPC分类号： H01L21302

    CPC分类号： H01L21/0276 ,  C23C16/325 ,  C30B25/105 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/0445 ,  H01L21/314 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  Y10S438/931 ,  Y10S438/952 ,  H01L2924/00

    摘要： The present invention generally provides a process for depositing silicon carbide using a silane-based material with certain process parameters that is useful for forming a suitable ARC for IC applications. The same material may also be used as a barrier layer and an etch stop, even in complex damascene structures and with high diffusion conductors such as copper as a conductive material. Under certain process parameters, a fixed thickness of the silicon carbide may be used on a variety of thicknesses of underlying layers. The thickness of the silicon carbide ARC is substantially independent of the thickness of the underlying layer for a given reflectivity, in contrast to the typical need for adjustments in the ARC thickness for each underlying layer thickness to obtain a given reflectivity. A preferred process sequence for forming a silicon carbide anti-reflective coating on a substrate, comprises introducing silicon, carbon, and a noble gas into a reaction zone of a process chamber, initiating a plasma in the reaction zone, reacting the silicon and the carbon in the presence of the plasma to form silicon carbide, and depositing a silicon carbide anti-reflective coating on a substrate in the chamber. Another aspect of the invention includes a substrate having a silicon carbide anti-reflective coating, comprising a dielectric layer deposited on the substrate and a silicon carbide anti-reflective coating having a dielectric constant of less than about 7.0 and preferably about 6.0 or less.

    摘要翻译： 本发明通常提供一种使用具有某些工艺参数的硅烷基材料沉积碳化硅的方法，其可用于形成用于IC应用的合适的ARC。 即使在复杂的镶嵌结构中也可以使用相同的材​​料作为阻挡层和蚀刻阻挡层，并且还可以使用诸如铜作为导电材料的高扩散导体。 在某些工艺参数下，碳化硅的固定厚度可用于各种厚度的下层。 对于给定的反射率，碳化硅ARC的厚度基本上与下层的厚度无关，相比之下，为了获得给定的反射率，每个下层厚度的ARC厚度的调整的典型需要。 用于在衬底上形成碳化硅抗反射涂层的优选工艺顺序包括将硅，碳和惰性气体引入到处理室的反应区中，在反应区中引发等离子体，使硅和碳 在等离子体的存在下形成碳化硅，以及在该腔室中的基底上沉积碳化硅抗反射涂层。 本发明的另一方面包括具有碳化硅抗反射涂层的基底，其包括沉积在基底上的电介质层和介电常数小于约7.0，优选约6.0或更小的碳化硅抗反射涂层。