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    Compliant monopolar micro device transfer head with silicon electrode
    31.
    发明授权
    Compliant monopolar micro device transfer head with silicon electrode 有权
    具有硅电极的单极微器件转移头

    公开(公告)号：US08686542B2

    公开(公告)日：2014-04-01

    申请号：US13828117

    申请日：2013-03-14

    Applicant: LuxVue Technology Corporation

    Inventor： Dariusz Golda ,  Andreas Bibl

    IPC: H04L21/00

    CPC classification number: B32B38/18 ,  B81C99/002 ,  H01L21/6835 ,  H01L23/5384 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2924/0002 ,  Y10T156/17 ,  H01L2924/00

    Abstract: A compliant monopolar micro device transfer head array and method of forming a compliant monopolar micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array including a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect, and each silicon electrode is deflectable into a cavity between the base substrate and the silicon electrode. A dielectric layer covers a top surface of each mesa structure.

    Abstract translation: 描述了一种兼容的单极微器件传输头阵列和从SOI衬底形成兼容单极微器件传输阵列的方法。 在一个实施例中，微器件转移头阵列包括基底衬底和在基底衬底上的图案化硅层。 图案化硅层可以包括硅互连和与硅互连电连接的硅电极阵列。 每个硅电极包括在硅互连上方突出的台面结构，并且每个硅电极可偏转到基底基板和硅电极之间的空腔中。 介电层覆盖每个台面结构的顶面。

    Compliant electrostatic transfer head with spring support layer
    32.
    发明授权
    Compliant electrostatic transfer head with spring support layer 有权
    符合静电转印头带弹簧支撑层

    公开(公告)号：US09425151B2

    公开(公告)日：2016-08-23

    申请号：US14307325

    申请日：2014-06-17

    Applicant: LuxVue Technology Corporation

    Inventor： Dariusz Golda ,  Stephen P. Bathurst ,  John A. Higginson ,  Andreas Bibl ,  Jeffrey Birkmeyer

    IPC: H01L21/768 ,  H01L23/538 ,  H01L23/00

    CPC classification number: H01L23/5384 ,  B81C99/002 ,  H01L21/76898 ,  H01L24/75 ,  H01L24/95

    Abstract: A compliant electrostatic transfer head and method of forming a compliant electrostatic transfer head are described. In an embodiment, a compliant electrostatic transfer head includes a cavity in a base substrate, a spring support layer on the base substrate, and a patterned device layer on the spring support layer. The spring support layer includes a spring support layer beam profile that extends over and is deflectable toward the cavity, and the patterned device layer includes an electrode beam profile that is supported by the spring support layer beam profile and extends over and is deflectable toward the cavity.

    Abstract translation: 描述了柔性静电转印头和形成顺应性静电转印头的方法。 在一个实施例中，顺应性静电转印头包括基底衬底中的空腔，在基底衬底上的弹簧支撑层，以及弹簧支撑层上的图案化器件层。 弹簧支撑层包括弹簧支撑层梁轮廓，该弹性支撑层梁型材向空腔延伸并且可偏转，并且图案化的装置层包括由弹簧支撑层梁轮廓支撑并且朝向腔体可偏转的电极梁轮廓 。

    Micro device transfer head array with metal electrodes
    36.
    发明授权
    Micro device transfer head array with metal electrodes 有权
    具有金属电极的微器件转印头阵列

    公开(公告)号：US09255001B2

    公开(公告)日：2016-02-09

    申请号：US13710438

    申请日：2012-12-10

    Applicant: LuxVue Technology Corporation

    Inventor： Dariusz Golda ,  Andreas Bibl

    IPC: H05K1/00 ,  B81C99/00

    CPC classification number: B81C99/002 ,  H01L21/6835 ,  H01L2221/68354

    Abstract: A monopolar and bipolar micro device transfer head array and method of forming a monopolar and bipolar micro device transfer array are described. In an embodiment, a micro device transfer head array includes a base substrate, a first insulating layer formed over the base substrate, and an array of mesa structures. A second insulating layer may be formed over the mesa structure, a patterned metal layer over the second insulating layer, and a dielectric layer covering the metal layer.

    Abstract translation: 描述了单极和双极微器件转移头阵列和形成单极和双极微器件转移阵列的方法。 在一个实施例中，微器件转移头阵列包括基底基板，形成在基底基板上的第一绝缘层和台面结构阵列。 可以在台面结构之上形成第二绝缘层，在第二绝缘层上形成图案化金属层，以及覆盖金属层的电介质层。

    Micro Pick Up Array Mount With Integrated Displacement Sensor
    39.
    发明申请
    Micro Pick Up Array Mount With Integrated Displacement Sensor 有权
    微型拾取阵列安装与集成位移传感器

    公开(公告)号：US20140241844A1

    公开(公告)日：2014-08-28

    申请号：US13776188

    申请日：2013-02-25

    Applicant: LUXVUE TECHNOLOGY CORPORATION

    Inventor： Dariusz Golda ,  John A. Higginson ,  Andreas Bibl ,  Paul Argus Parks ,  Stephen Paul Bathurst

    IPC: B25J11/00 ,  B25J15/00

    CPC classification number: B25J11/00 ,  B25J7/00 ,  B25J9/0015 ,  B25J15/0052 ,  B25J15/0085 ,  H01L24/75 ,  H01L2224/7598

    Abstract: Systems and methods for transferring a micro device from a carrier substrate are disclosed. In an embodiment, a mass transfer tool manipulator assembly allows active alignment between an array of electrostatic transfer heads on a micro pick up array and an array of micro devices on a carrier substrate. Displacement of a compliant element of the mass transfer tool manipulator assembly may be sensed to control alignment between the array of electrostatic transfer heads and the array of micro devices.

    Abstract translation: 公开了用于从载体衬底传送微器件的系统和方法。 在一个实施例中，质量传递工具操纵器组件允许在微拾取阵列上的静电转印头阵列和载体衬底上的微器件阵列之间的主动对准。 可以检测质量传递工具操纵器组件的柔性元件的位移，以控制静电转印头阵列与微器件阵列之间的对准。

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