摘要:
A microwave applicator includes an elongated chamber, preferably having a cylindrical shape, for processing materials therein. A waveguide, connected to the elongated chamber, couples microwave power into the elongated chamber. The cross-sectional area of the elongated chamber can be mechanically adjusted to control and maintain the microwave field uniformity and resonant mode, preferably the length independent mode TM.sub.010, during the processing of the material. The applicator can thus provide microwave energy having a substantially uniform field distribution over a large area for processing materials, for example, a web or sheet like product, plywood and pre-impregnated cloth, in a continuous manner.
摘要:
This invention describes a new process for the selective isolation of through holes in the production of a multi-layer printed circuit card which allows for substantially smaller holes through reference layers to be built, leading to substantially better electrical isolation of signal traces on adjacent wiring layers, and for substantially improved current carrying capacity in the reference layers. This invention also describes a process to allow reference layers of different thickness from adjacent signal layers, even if they are part of the same `core`. Several different process flows are disclosed, leading to substantially the same structure but with varying degrees of complexity and quality of the finished product.
摘要:
A continuous process for the fabrication of metal clad, laminated core structures, such as circuit board cores, wherein the copper layers on the laminate are used to form a waveguide which propagates microwave or RF radiation in TEM mode down the length of the structure for heating the core layers while the necessary pressure is applied. The TEM mode offers substantial advantages in the uniformity and control of processing in this environment. In particular, the system may be made tunable using the positioning or two pinch points, produced by rollers applying pressure to consolidate the layered material, which points create end chokes defining a heating and pressure region wherein the radiation is reflected. Alternatively, the metal layers may also be used as capacitor-like plates for applying RF energy across the layered material.
摘要:
A continuous process for the fabrication of metal clad, laminated core structures, such as circuit board cores, wherein the copper layers on the laminate are used to form a waveguide which propagates microwave or RF radiation in TEM mode down the length of the structure for heating the core layers while the necessary pressure is applied. The TEM mode offers substantial advantages in the uniformity and control of processing in this environment. In particular, the system may be made tunable using the positioning or two pinch points, produced by rollers applying pressure to consolidate the layered material, which points create end chokes defining a heating and pressure region wherein the radiation is reflected. Alternatively, the metal layers may also be used as capacitor-like plates for applying RF energy across the layered material.
摘要:
A multilevel electronic package comprising at least two levels, each level including a poly(aryl ether benzimidazole), a polymide and copper. A process of preparing this package is disclosed. Several novel poly(aryl ether benzimidazoles) useful in preparing this package are also set forth.
摘要:
A curable material comprising a blend of a fluorine-containing cyanate and a fluorine-containing poly(arylene ether) wherein said cyanate is a monomer having the structureN.ident.C--O--R--.sub.n --O--C.ident.Nsaid fluorine containing poly(arylene ether) has the structureX--R--.sub.m --Xwherein X is any group capable of reacting with a --C.ident.N group;R is an aliphatic or aromatic group which may or may not be fluorosubstituted;R.sup.1 is an aliphatic or aromatic group which may or may not be fluoro substituted or R.sup.1 is selected from the group consisting of ether, carbonyl, sulfone, phosphine oxide and sulfide, and at least one of R or R.sup.1 must be fluoro substituted;n is 0-10; andm is 0-100;said material being heat-curable at a temperatures between 180.degree. and 325.degree. C.;said material in the cured state comprising a fluorine-containing polycyanurate network having a plurality of discrete phases of said fluorine-containing thermoplastic polymer dispersed therein wherein said thermoplastic polymer phases are of submicron size.
摘要:
An electronic circuit package comprising an electrically conductive circuit layer on a polymer, ceramic or multi-layer substrate wherein a curable dielectric material is applied over the electrically conductive circuit layer. The curable dielectric material comprises a blend of a fluorine-containing cyanate and a fluorine-containing arylene ether polymer. The cyanate is a monomer having the structureN.tbd.C--O--R--[R.sup.1 ].sub.n --O--C.tbd.Nand the fluorine containing arylene ether polymer has the structureX--R--[R.sup.1 ].sub.m --Xwherein X is any group capable of reacting with a --C.tbd.N group;R is an aliphatic or aromatic group which may or may not be fluorosubstituted;R.sup.1 is an aliphatic or aromatic group which may or may not be fluoro substituted or R.sup.1 is selected from the group consisting of ether, carbonyl, sulfone, phosphine oxide and sulfide, and at least one of R or R.sup.1 must be fluoro substituted;n is 0-10; andm is 0-100.The dielectric material in the cured state comprises a fluorine-containing polycyanurate network having a plurality of discrete phases of the fluorine-containing thermoplastic polymer dispersed therein. The thermoplastic polymer phases are of submicron size.
摘要翻译:一种电子电路封装,包括在聚合物,陶瓷或多层基底上的导电电路层,其中可固化介电材料施加在导电电路层上。 可固化电介质材料包括含氟氰酸酯和含氟亚芳基醚聚合物的共混物。 氰酸酯是具有结构N 3BOND C-O-R- [R 1] n -O-C 3 N N的单体,含氟亚芳基醚聚合物具有X-R- [R 1] m -X的结构,其中X是可与-C 3 N N基反应的基团; R是可以是或不是氟取代的脂族或芳族基团; R1是脂族或芳族基团,其可以是或不是氟取代的,或者R1选自醚,羰基,砜,氧化膦和硫化物,并且R或R 1中的至少一个必须是氟取代的; n为0-10; m为0-100。 固化状态下的电介质材料含有分散在其中的含氟热塑性聚合物的多个离散相的含氟聚氰脲酸酯网络。 热塑性聚合物相具有亚微米尺寸。
摘要:
A polymeric substrate is exposed to an oxygen containing plasma; and then exposed to a reducing atmosphere at an elevated temperature. The reducing treatment reverses the effects on the polymer surface chemistry imparted by action of the oxidizing plasma. In this manner, the original electroactive properties of certain polymers are regenerated at the surface.
摘要:
A prepreg which is heat curable within a temperature range of between about 200.degree. C. and 325.degree. C. comprising a reinforcing material impregnated with a curable material said curable material comprising a blend of a fluorine-containing cyanate and a fluorine-containing arylene ether polymer wherein said cyanate is a monomer having the structureN.tbd.C--O--R--[R.sup.1 ].sub.n --O--C.tbd.Nsaid fluorine containing arylene ether polymer has the structureX--R--[R.sup.1 ].sub.m --Xwherein X is any group capable of reacting with a --C.tbd.N group;R is an aliphatic or aromatic group which may or may not be fluorosubstituted;R.sup.1 is an aliphatic or aromatic group which may or may not be fluoro substituted or R.sup.1 is selected from the group consisting of ether, carbonyl, sulfone, phosphine oxide and sulfide, and at least one of R or R.sup.1 must be fluoro substituted;n is 0-10; andm is 0-100;said material in the cured state comprising a fluorine-containing polycyanurate network having a plurality of discrete phases of said fluorine-containing thermoplastic polymer dispersed therein wherein said thermoplastic polymer phases are of submicron size.
摘要:
The described invention is directed to microwave methods for burning-in, electrical stressing, thermal stressing and reducing rectifying junction leakage current in fully processed semiconductor chips individually and at wafer level, as well as burning in and stressing semiconductor chip packaging substrates and the combination of a semiconductor chip mounted onto a semiconductor chip packaging substrate. Microwaves burn-in devices in a substantially shorter period of time than conventional burn-in techniques and avoid the need for special workpiece holders which are required by conventional stress and burn-in techniques. Additionally, microwave methods are described for reducing the leakage current of recitfying junctions, such as PN junctions and Schottky barrier diode junctions of semiconductor devices on fully processed semiconductor chips and wafers.