公开(公告)号：US08084368B2

公开(公告)日：2011-12-27

申请号：US12447533

申请日：2007-11-08

申请人： Masanobu Hatanaka ,  Michio Ishikawa ,  Kanako Tsumagari

发明人： Masanobu Hatanaka ,  Michio Ishikawa ,  Kanako Tsumagari

IPC分类号： H01L21/46

CPC分类号： C23C16/38 ,  C23C16/30 ,  C23C16/4554 ,  C23C16/45555 ,  C23C16/45565 ,  H01L21/28562 ,  H01L21/76843

摘要： A barrier film made of a ZrB2 film is formed by use of a coating apparatus provided with plasma generation means including a coaxial resonant cavity and a microwave supply circuit for exciting the coaxial resonant cavity, the coaxial resonant cavity including spaced apart conductors provided around the periphery of a nonmetallic pipe for reactive gas introduction, the coaxial resonant cavity having an inner height equal to an integer multiple of one-half of the exciting wavelength, the plasma generation means being constructed such that a gas injected from one end of the nonmetallic pipe is excited into a plasma state by a microwave when the gas is in a region of the nonmetallic pipe which is not covered with the conductors and such that the gas in the plasma state is discharged from the other end of the nonmetallic pipe.

摘要翻译： 由ZrB2膜制成的阻挡膜通过使用具有等离子体产生装置的涂覆装置形成，所述等离子体产生装置包括同轴谐振腔和用于激发同轴谐振腔的微波供应电路，所述同轴谐振腔包括设置在周边周围的间隔开的导体 的用于反应气体引入的非金属管，所述同轴谐振腔的内部高度等于所述激发波长的二分之一的整数倍，所述等离子体产生装置被构造成使得从所述非金属管的一端注入的气体为 当气体处于不被导体覆盖的非金属管的区域中并且等离子体状态的气体从非金属管的另一端排放时，通过微波激发成等离子体状态。

公开(公告)号：US08043963B2

公开(公告)日：2011-10-25

申请号：US12528811

申请日：2008-02-25

申请人： Masanobu Hatanaka ,  Kanako Tsumagari ,  Michio Ishikawa

发明人： Masanobu Hatanaka ,  Kanako Tsumagari ,  Michio Ishikawa

IPC分类号： H01L21/4763

CPC分类号： H01L21/28556 ,  C23C16/30 ,  C23C16/45542 ,  H01L21/28562 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76849 ,  Y10T29/49146 ,  Y10T29/49162

摘要： A method for manufacturing a semiconductor device that improves the reliability of a metal cap layer and productivity. The method includes an insulation layer step of superimposing an insulation layer (11) on a semiconductor substrate (2) including an element region (2b), a recess step of forming a recess (12) in the insulation layer (11), a metal layer step of embedding a metal layer (13) in the recess (12), a planarization step of planarizing a surface of the insulation layer (11) and a surface of the metal layer (13) to be substantially flush with each other, and a metal cap layer step of forming a metal cap layer (16) containing at least zirconium element and nitrogen element on the surface of the insulation layer (11) and the surface of the metal layer (13) after the planarization step.

摘要翻译： 一种用于制造提高金属盖层的可靠性和生产率的半导体器件的方法。 该方法包括在包括元件区域（2b）的半导体衬底（2）上叠加绝缘层（11）的绝缘层步骤，在绝缘层（11）中形成凹陷（12）的凹陷步骤，金属 在所述凹部（12）中嵌入金属层（13）的层叠工序，使所述绝缘层（11）的表面和所述金属层（13）的表面平坦化的平坦化工序， 在平坦化步骤之后，在所述绝缘层（11）的表面和所述金属层（13）的表面上形成至少含有锆元素和氮元素的金属覆盖层（16）的金属覆盖层工序。

公开(公告)号：US20100068880A1

公开(公告)日：2010-03-18

申请号：US12528811

申请日：2008-02-25

申请人： Masanobu Hatanaka ,  Kanako Tsumagari ,  Michio Ishikawa

发明人： Masanobu Hatanaka ,  Kanako Tsumagari ,  Michio Ishikawa

IPC分类号： H01L21/768 ,  H05K3/10

CPC分类号： H01L21/28556 ,  C23C16/30 ,  C23C16/45542 ,  H01L21/28562 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76849 ,  Y10T29/49146 ,  Y10T29/49162

摘要： A method for manufacturing a semiconductor device that improves the reliability of a metal cap layer and productivity. The method includes an insulation layer step of superimposing an insulation layer (11) on a semiconductor substrate (2) including an element region (2b), a recess step of forming a recess (12) in the insulation layer (11), a metal layer step of embedding a metal layer (13) in the recess (12), a planarization step of planarizing a surface of the insulation layer (11) and a surface of the metal layer (13) to be substantially flush with each other, and a metal cap layer step of forming a metal cap layer (16) containing at least zirconium element and nitrogen element on the surface of the insulation layer (11) and the surface of the metal layer (13) after the planarization step.

摘要翻译： 一种用于制造提高金属盖层的可靠性和生产率的半导体器件的方法。 该方法包括在包括元件区域（2b）的半导体衬底（2）上叠加绝缘层（11）的绝缘层步骤，在绝缘层（11）中形成凹陷（12）的凹陷步骤，金属 在所述凹部（12）中嵌入金属层（13）的层叠工序，使所述绝缘层（11）的表面和所述金属层（13）的表面平坦化的平坦化工序， 在平坦化步骤之后，在所述绝缘层（11）的表面和所述金属层（13）的表面上形成至少含有锆元素和氮元素的金属覆盖层（16）的金属覆盖层工序。

公开(公告)号：US20090238968A1

公开(公告)日：2009-09-24

申请号：US11886600

申请日：2006-03-23

申请人： Masanobu Hatanaka ,  Yoshikazu Takahashi ,  Michio Ishikawa ,  Fumio Nakamura

发明人： Masanobu Hatanaka ,  Yoshikazu Takahashi ,  Michio Ishikawa ,  Fumio Nakamura

IPC分类号： B05D7/22 ,  C23C16/44 ,  C23C14/12

CPC分类号： C23C16/4402 ,  B05D1/60 ,  B05D7/22

摘要： The object of this invention is to provide a method for producing a component for vacuum apparatus and a resin coating forming apparatus capable of easily forming a resin coating on an internal flow path complex in shape.The resin coating forming apparatus (21) comprises a monomer vapor supplying unit (23), a vacuum pumping line (24) for transporting monomer vapor, a connection portion (24c) connectable with the internal flow path of a component (22A) provided on part of the vacuum pumping line (24), and a temperature adjusting unit (31) for depositing the monomer vapor onto the internal flow path of the component (22A) connected with the connection portion (24c) to form a resin coating. The above arrangement permits the formation of a uniform, high-coverage resin coating on the internal flow path of the component (22A) by merely exposing the internal flow path to monomer vapor.

摘要翻译： 本发明的目的是提供一种用于制造真空装置的部件的方法和能够容易地在内部流路复合体上形成树脂涂层的树脂涂层形成装置。 树脂涂层形成装置（21）包括单体蒸气供给单元（23），用于输送单体蒸气的真空泵送管线（24），可连接到设置在其上的部件（22A）的内部流路的连接部分（24c） 真空泵送管线（24）的一部分和用于将单体蒸气沉积到与连接部分（24c）连接的部件（22A）的内部流动路径上以形成树脂涂层的温度调节单元（31）。 上述布置允许通过仅将内部流动路径暴露于单体蒸气，在组件（22A）的内部流动路径上形成均匀的高覆盖率树脂涂层。

公开(公告)号：US20090102025A1

公开(公告)日：2009-04-23

申请号：US11664091

申请日：2006-04-07

申请人： Toshio Hayashi ,  Yasuhiro Morikawa ,  Michio Ishikawa ,  Yuji Furumura ,  Naomi Mura

发明人： Toshio Hayashi ,  Yasuhiro Morikawa ,  Michio Ishikawa ,  Yuji Furumura ,  Naomi Mura

IPC分类号： H01L21/461 ,  H01L29/10

CPC分类号： H01L29/7833 ,  H01L21/28061 ,  H01L21/31116 ,  H01L21/76802 ,  H01L29/6659

摘要： A method for manufacturing a semiconductor device comprises dry-etching a thin film using a resist mask carrying patterns in which at least one of the width of each pattern and the space between neighboring two patterns ranges from 32 to 130 nm using a halogenated carbon-containing compound gas with the halogen being at least two members selected from the group consisting of F, I and Br. The ratio of at least one of I and Br is not more than 26% of the total amount of the halogen atoms as expressed in terms of the atomic compositional ratio to transfer the patterns onto the thin film. Such etching of a thin film avoids causing damage to the resist mask used. The resulting thin film carrying the transferred patterns is used as a mask for subjecting the underlying material to dry-etching.

摘要翻译： 一种用于制造半导体器件的方法包括使用具有图案的抗蚀剂掩模对薄膜进行干法蚀刻，其中每个图案的宽度和相邻两个图案之间的空间中的至少一个范围为32至130nm，使用含卤素的 具有卤素的复合气体是选自F，I和Br中的至少两种。 I和Br中的至少一个的比例不超过卤素原子总量的26％，如以将原料组成比转移到薄膜上的原子组成比来表示的。 这种薄膜的蚀刻避免了对所使用的抗蚀剂掩模的损害。 所得到的带有转印图案的薄膜用作对下面的材料进行干蚀刻的掩模。

公开(公告)号：US20050268852A1

公开(公告)日：2005-12-08

申请号：US11133437

申请日：2005-05-20

申请人： Masanobu Hatanaka ,  Michio Ishikawa ,  Se-Ju Lim ,  Fumio Nakamura

发明人： Masanobu Hatanaka ,  Michio Ishikawa ,  Se-Ju Lim ,  Fumio Nakamura

IPC分类号： C23C14/00 ,  C23C16/00 ,  C23C16/02 ,  C23C16/34 ,  C23C16/38 ,  C23C16/44 ,  C23C16/455 ,  C23C16/54

CPC分类号： C23C16/38 ,  C23C16/0236 ,  C23C16/34 ,  C23C16/44 ,  C23C16/4405 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/54 ,  Y10S414/139

摘要： A vacuum film-forming apparatus comprising substrate stages; vacuum chamber-forming containers opposed to the stages; a means for moving the substrate between the stages; and gas-introduction means connected to every containers, wherein one of the stage and the container is ascended or descended towards the other to bring the upper face of the stage and the opening of the container into contact with one another so that vacuum chambers can be formed and that a raw gas and/or a reactant gas can be introduced into each space of the chamber through each gas-introduction means to carry out either the adsorption or reaction step for allowing the raw gas to react with the reactant gas. The apparatus permits the independent establishment of process conditions for the adsorption and reaction processes and the better acceleration of the reaction between raw and reactant gases to give a film having excellent quality and the apparatus can be manufactured at a low cost.

摘要翻译： 一种包括基底台的真空成膜装置; 与阶段相对的真空室形成容器; 用于在所述级之间移动所述衬底的装置; 以及连接到每个容器的气体导入装置，其中所述平台和容器中的一个朝向另一个上升或下降以使所述台的上表面和所述容器的开口彼此接触，使得真空室可以 并且可以通过每个气体引入装置将原料气体和/或反应气体引入室的每个空间中，以进行用于使原料气体与反应气体反应的吸附或反应步骤。 该装置允许独立地建立用于吸附和反应过程的工艺条件，并且更好地加速原料气体和反应气体之间的反应，得到具有优良品质的膜，并且可以以低成本制造装置。

公开(公告)号：US5250339A

公开(公告)日：1993-10-05

申请号：US940753

申请日：1992-09-08

申请人： Noriaki Tani ,  Kyuzo Nakamura ,  Michio Ishikawa ,  Masanori Hashimoto ,  Yoshifumi Ota

发明人： Noriaki Tani ,  Kyuzo Nakamura ,  Michio Ishikawa ,  Masanori Hashimoto ,  Yoshifumi Ota

IPC分类号： G11B5/66 ,  G11B5/72 ,  G11B5/73 ,  B32B3/02

CPC分类号： G11B5/7325 ,  G11B5/66 ,  G11B5/72 ,  Y10S428/90 ,  Y10T428/12826 ,  Y10T428/265

摘要： A magnetic recording medium suitable for high-density recording which comprises a non-magnetic substrate disk, at least one magnetic layer and at least one protective layer, the magnetic layer and the protective layer being formed in succession on the non-magnetic substrate disk, wherein the non-magnetic substrate disk comprises a glass substrate and at least one non-magnetic metallic film provided on the glass substrate, and the non-magnetic metallic film is provided on a surface thereof with a multitude of fine concentric grooves.

摘要翻译： 一种适用于高密度记录的磁记录介质，包括非磁性基板盘，至少一个磁性层和至少一个保护层，所述磁性层和保护层依次形成在非磁性基板盘上， 其中所述非磁性基板盘包括玻璃基板和设置在所述玻璃基板上的至少一个非磁性金属膜，并且所述非磁性金属膜在其表面上设置有多个细小的同心凹槽。

公开(公告)号：US5147734A

公开(公告)日：1992-09-15

申请号：US323452

申请日：1989-03-14

申请人： Kyuzo Nakamura ,  Yoshifumi Ota ,  Michio Ishikawa ,  Noriaki Tani ,  Masanori Hashimoto

发明人： Kyuzo Nakamura ,  Yoshifumi Ota ,  Michio Ishikawa ,  Noriaki Tani ,  Masanori Hashimoto

IPC分类号： G11B5/706 ,  G11B5/64 ,  G11B5/66 ,  G11B5/73 ,  G11B5/738 ,  G11B5/84 ,  G11B5/85 ,  G11B5/851

CPC分类号： G11B5/7325 ,  G11B5/66 ,  G11B5/84 ,  Y10T428/12861

摘要： A magnetic recording member with improved coercive force is obtained by:(a) forming by sputtering or Cr film on a non-magnetic substrate;(b) forming by sputtering an epitaxially grown film of a Co alloy containing at least Cr as an additional metal on the Cr film formed in the step (a);and applying a negative bias voltage to the substrate during at least one of steps (a) and (b).The coercive force of the magnetic recording member is further increased when high-frequency sputtering is used instead of direct current sputtering.

公开(公告)号：US5043598A

公开(公告)日：1991-08-27

申请号：US407825

申请日：1989-09-15

申请人： Tsutomu Maeda ,  Kiyoshi Matsui ,  Michio Ishikawa ,  Takayuki Kanno ,  Yasushi Iwata

发明人： Tsutomu Maeda ,  Kiyoshi Matsui ,  Michio Ishikawa ,  Takayuki Kanno ,  Yasushi Iwata

IPC分类号： H02M9/02 ,  H02M9/06 ,  H04N3/185

CPC分类号： H04N3/185

摘要： A high voltage generating circuit which includes a switching circuit for switching a DC input, a fly-back transformer whose input coil is driven by pulses delivered from the switching actuation of the switching actuation of the circuit, a rectifier circuit for rectifying the fly-back voltage generated in the output coil of the fly-back transformer, a capacitor for smoothing the rectified output, and a voltage stabilizing circuit. A diode is electrically connected to one terminal of the output coil of the fly-back transformer on the low-voltage side thereof as compared with the ground, the diode being so determined as to position in the forward direction to the direction of rectification. The voltage stabilizing circuit is formed by a voltage sensing circuit for sensing a DC high voltage output, comparing it with a reference voltage applied from a reference voltage source and generating an output of a result of comparison and a control circuit connected between the anode of the diode and the ground terminal. The control circuit is formed of a plurality of transistors including transistors controlled in response to the output from the voltage sensing circuit and a protective circuit for each of the transistors.

摘要翻译： 一种高压发生电路，包括用于切换直流输入的开关电路，其反相变压器，其输入线圈由从电路的开关致动的切换致动传递的脉冲驱动;整流电路，用于整流回扫 在回扫变压器的输出线圈中产生的电压，用于平滑整流输出的电容器和稳压电路。 与地电位相比，二极管在低压侧与反激式变压器的输出线圈的一个端子电连接，二极管被确定为朝向整流方向的正向位置。 电压稳定电路由用于感测直流高压输出的电压感测电路形成，将其与从参考电压源施加的参考电压进行比较，并产生比较结果的输出和连接在比较电路的阳极之间的控制电路 二极管和接地端子。 控制电路由多个晶体管构成，晶体管包括响应于来自电压感测电路的输出而被控制的晶体管，以及每个晶体管的保护电路。

公开(公告)号：US4804590A

公开(公告)日：1989-02-14

申请号：US934594

申请日：1986-11-25

申请人： Kyuzo Nakamura ,  Yoshifumi Ota ,  Taiki Yamada ,  Michio Ishikawa ,  Noriaki Tani

发明人： Kyuzo Nakamura ,  Yoshifumi Ota ,  Taiki Yamada ,  Michio Ishikawa ,  Noriaki Tani

IPC分类号： G11B5/725 ,  G11B5/72

CPC分类号： G11B5/725 ,  Y10S428/90 ,  Y10T428/30

摘要： An abrasion resistant magnetic recording member having a carbonaceous surfacial protective film for protecting a surface of a magnetic film formed on a substrate, and the carbonaceous surfacial protective film is formed of a lower layer comprising a comparatively hard carbonaceous film and an upper layer comprising a comparatively soft carbonaceous film.

摘要翻译： 具有用于保护形成在基板上的磁性膜的表面的碳质表面保护膜的耐磨磁记录元件和碳质表面保护膜由包含比较硬的碳质膜和包含相对较硬的碳质膜的上层形成， 软碳质薄膜。