公开(公告)号：US20050269511A1

公开(公告)日：2005-12-08

申请号：US11201222

申请日：2005-08-11

申请人： Satoshi Tomimatsu ,  Hidemi Koike ,  Junzo Azuma ,  Tohru Ishitani ,  Aritoshi Sugimoto ,  Yuichi Hamamura ,  Isamu Sekihara ,  Akira Shimase

发明人： Satoshi Tomimatsu ,  Hidemi Koike ,  Junzo Azuma ,  Tohru Ishitani ,  Aritoshi Sugimoto ,  Yuichi Hamamura ,  Isamu Sekihara ,  Akira Shimase

IPC分类号： G01N1/28 ,  G01N1/32 ,  G01N23/04 ,  G01N23/225 ,  G01Q10/00 ,  G01Q30/02 ,  G01Q30/04 ,  G01Q30/20 ,  G01Q60/44 ,  G01R1/06 ,  G01R31/28 ,  G01R31/311 ,  H01J37/28 ,  H01L21/66 ,  G01N23/00 ,  G21K7/00

CPC分类号： G01Q10/06 ,  G01N23/04 ,  G01N23/225 ,  G01R31/2886 ,  G01R31/311 ,  H01J37/28

摘要： A probe driving method and a probe apparatus for bringing a probe into contact with the surface of a sample in a safe and efficient manner by monitoring the probe height. Information about the height of the probe from the sample surface is obtained by detecting a probe shadow (54) appearing immediately before the probe contacts the sample, or based on a change in relative positions of a probe image and a sample image that are formed as an ion beam is irradiated diagonally.

摘要翻译： 探针驱动方法和探针装置，用于通过监测探针高度，以安全和有效的方式使探针与样品的表面接触。 通过检测在探针接触样品之前出现的探针阴影（54），或者基于探针图像和样品图像的相对位置的变化，获得关于来自样品表面的探针的高度的信息， 对角线照射离子束。

公开(公告)号：US06960765B2

公开(公告)日：2005-11-01

申请号：US10296887

申请日：2001-06-08

申请人： Satoshi Tomimatsu ,  Hidemi Koike ,  Junzo Azuma ,  Tohru Ishitani ,  Aritoshi Sugimoto ,  Yuichi Hamamura ,  Isamu Sekihara ,  Akira Shimase

发明人： Satoshi Tomimatsu ,  Hidemi Koike ,  Junzo Azuma ,  Tohru Ishitani ,  Aritoshi Sugimoto ,  Yuichi Hamamura ,  Isamu Sekihara ,  Akira Shimase

IPC分类号： G01N1/28 ,  G01N1/32 ,  G01N23/04 ,  G01N23/225 ,  G01Q10/00 ,  G01Q30/02 ,  G01Q30/04 ,  G01Q30/20 ,  G01Q60/44 ,  G01R1/06 ,  G01R31/28 ,  G01R31/311 ,  H01J37/28 ,  H01L21/66 ,  G01N13/16 ,  G01B5/28

CPC分类号： G01Q10/06 ,  G01N23/04 ,  G01N23/225 ,  G01R31/2886 ,  G01R31/311 ,  H01J37/28

摘要： A probe driving method and a probe apparatus for bringing a probe into contact with the surface of a sample in a safe and efficient manner by monitoring the probe height. Information about the height of the probe from the sample surface is obtained by detecting a probe shadow appearing immediately before the probe contacts the sample, or based on a change in relative positions of a probe image and a sample image that are formed as an ion beam is irradiated diagonally.

摘要翻译： 探针驱动方法和探针装置，用于通过监测探针高度，以安全和有效的方式使探针与样品的表面接触。 通过检测在探针接触样品之前出现的探针阴影，或者基于作为离子束形成的探针图像和样品图像的相对位置的变化，获得关于来自样品表面的探针的高度的信息 对角线照射。

公开(公告)号：US20050186010A1

公开(公告)日：2005-08-25

申请号：US11036047

申请日：2005-01-18

申请人： Takeya Shibata ,  Yuzuru Sekiguchi ,  Michiharu Nishijima ,  Tsutomu Tsuji ,  Hidemi Koike ,  Yutaka Saegusa ,  Kousuke Watanabe ,  Takayuki Tanigawa ,  Toshihiro Houhara ,  Shinichi Mukasa ,  Kenji Yamamoto

发明人： Takeya Shibata ,  Yuzuru Sekiguchi ,  Michiharu Nishijima ,  Tsutomu Tsuji ,  Hidemi Koike ,  Yutaka Saegusa ,  Kousuke Watanabe ,  Takayuki Tanigawa ,  Toshihiro Houhara ,  Shinichi Mukasa ,  Kenji Yamamoto

IPC分类号： B26D5/00 ,  B26D7/01 ,  B26D7/26 ,  B26F1/38 ,  B41J11/26

CPC分类号： B26F1/3813 ,  B26D5/00 ,  B26D7/015 ,  B26D7/2628 ,  B26D2007/0087 ,  B26D2007/2678 ,  Y10T83/0348 ,  Y10T83/162 ,  Y10T83/538

摘要： A cut target medium driving type cutting plotter, in which a cut target medium to be cut is driven in a first direction and a cutting unit is driven in a second direction perpendicular to the first direction, thereby moving the cutting unit in a two-dimensional direction relative to the cut target medium to make the cutting unit to be selectively brought into press contact with and separated from the cut target medium to cut the cut target medium in a desired shape, the cut target medium driving type cutting plotter includes a cut target medium supporting sheet to removably support the cut target medium on a surface opposite to the cutting unit. Preferably, the cut target medium is driven in the first direction together with the cut target medium supporting sheet, and the cut target medium supported on the cut target medium supporting sheet is cut by the cutting unit.

摘要翻译： 一种切割目标介质驱动型切割机，其中待切割的切割目标介质沿第一方向被驱动，并且切割单元沿与第一方向垂直的第二方向被驱动，从而将切割单元以二维 相对于切割目标介质的方向，使得切割单元选择性地与切割的目标介质压接并分离，以将切割的目标介质切割成期望的形状，切割的目标介质驱动型切割机包括切割目标 中等支撑片材，以可拆卸地支撑与切割单元相对的表面上的切割目标介质。 优选地，切割目标介质与切割的目标介质支撑片材一起沿第一方向被驱动，并且被切割的目标介质支撑片材上支撑的切割目标介质被切割单元切割。

公开(公告)号：US06566654B1

公开(公告)日：2003-05-20

申请号：US09697773

申请日：2000-10-27

申请人： Ryuichi Funatsu ,  Shigeto Isakozawa ,  Hidemi Koike

发明人： Ryuichi Funatsu ,  Shigeto Isakozawa ,  Hidemi Koike

IPC分类号： G03F900

CPC分类号： H01J37/28 ,  H01J2237/2817 ,  H01J2237/3174

摘要： The present invention is intended to detect defects in a circuit pattern formed on a semiconductor wafer by a circuit pattern forming process, to facilitates the extraction and observation of the defects, to improve the accuracy of analysis of the causes of the defects, and to determine the causes of the defects and to take measures to eliminate the causes of the defects in a greatly reduced time after the formation of the defects. A method of inspecting a circuit pattern for defects and analyzing defects, comprising locating a defect in a circuit pattern formed on a wafer by using an electron beam, specifying a chip having the defect on the basis of position data on the defect, cutting out the chip from the semiconductor wafer, thinning a portion of the chip to form a thin portion, and observing the thin portion of the chip under a transmission electron microscope to determine the causes of the defect.

摘要翻译： 本发明旨在通过电路图案形成处理来检测在半导体晶片上形成的电路图案中的缺陷，以便于提取和观察缺陷，提高对缺陷原因的分析准确性，并确定 造成缺陷的原因，并在形成缺陷后大幅度缩短的时间内采取措施消除缺陷的原因。 一种用于检查缺陷的电路图案和分析缺陷的方法，包括通过使用电子束将形成在晶片上的电路图案中的缺陷定位在缺陷上，根据缺陷的位置数据指定具有缺陷的芯片， 从半导体晶片切片，使芯片的一部分变薄以形成薄的部分，并且在透射电子显微镜下观察芯片的薄部分以确定缺陷的原因。

公开(公告)号：US06476387B1

公开(公告)日：2002-11-05

申请号：US09311268

申请日：1999-05-14

申请人： Norimasa Nishimura ,  Akira Shimase ,  Junzou Azuma ,  Yuichi Hamamura ,  Michinobu Mizumura ,  Yasuhiro Koizumi ,  Hidemi Koike

发明人： Norimasa Nishimura ,  Akira Shimase ,  Junzou Azuma ,  Yuichi Hamamura ,  Michinobu Mizumura ,  Yasuhiro Koizumi ,  Hidemi Koike

IPC分类号： H01J3730

CPC分类号： H01J37/28 ,  H01J2237/0047 ,  H01J2237/2482

摘要： In a method for observing or processing and analyzing the surface of a sample by irradiating a charged beam on the sample covered at least partially by an insulator film, an ultraviolet light is irradiated possibly as pulse on the sample (substrate), thereby transforming the insulator into a conductive material due to the photoconductivity effect, thereby transforming the surface of the sample (substrate) into a conductive material, so that charged particles are grounded from a grounded portion in order to prevent the charged beam from being repulsed due to charged particles of the irradiated charged beam accumulated in the insulator formed on the surface of the sample (substrate).

摘要翻译： 在通过在至少部分地被绝缘体膜覆盖的样品上照射带电束的样品的表面的方法中，紫外光可能作为脉冲照射在样品（衬底）上，从而将绝缘体 由于光电导效应而成为导电材料，从而将样品（基板）的表面转变为导电材料，使得带电粒子从接地部分接地，以防止带电粒子由于带电粒子而被斥力 被照射的带电光束积聚在形成在样品（基板）表面上的绝缘体中。

公开(公告)号：US5216253A

公开(公告)日：1993-06-01

申请号：US780198

申请日：1991-10-22

申请人： Hidemi Koike

发明人： Hidemi Koike

IPC分类号： C23C14/48 ,  H01J37/05 ,  H01J37/304 ,  H01J37/317 ,  H01L21/265

CPC分类号： H01J37/304 ,  H01J37/3171 ,  H01J2237/0455 ,  H01J2237/30472

摘要： In an ion implantation apparatus, a first slit for limiting an ion beam width is provided between an ion source and a mass separation electromagnet. An accelerator is provided behind the mass separation electromagnet. A second slit for separating the ion beam is provided between a deflector provided behind the accelerator and a wafer. The slit widths of the first and second slits are controlled by a controller which monitors an ion source acceleration voltage, a magnetic field intensity of the mass separation electromagnet, an accelerator voltage, and a magnetic field intensity of the deflector, and control the slit widths of the first and second slits based on the monitored information.

摘要翻译： 在离子注入装置中，在离子源和质量分离电磁体之间设置用于限制离子束宽度的第一狭缝。 在质量分离电磁体之后设置加速器。 用于分离离子束的第二狭缝设置在设置在加速器后面的偏转器和晶片之间。 第一和第二狭缝的狭缝宽度由监视离子源加速电压，质量分离电磁体的磁场强度，加速器电压和偏转器的磁场强度的控制器控制，并且控制狭缝宽度 的第一和第二狭缝基于所监视的信息。

公开(公告)号：US08156852B2

公开(公告)日：2012-04-17

申请号：US11036047

申请日：2005-01-18

申请人： Takeya Shibata ,  Yuzuru Sekiguchi ,  Michiharu Nishijima ,  Tsutomu Tsuji ,  Hidemi Koike ,  Yutaka Saegusa ,  Kousuke Watanabe ,  Takayuki Tanigawa ,  Toshihiro Houhara ,  Shinichi Mukasa ,  Kenji Yamamoto

发明人： Takeya Shibata ,  Yuzuru Sekiguchi ,  Michiharu Nishijima ,  Tsutomu Tsuji ,  Hidemi Koike ,  Yutaka Saegusa ,  Kousuke Watanabe ,  Takayuki Tanigawa ,  Toshihiro Houhara ,  Shinichi Mukasa ,  Kenji Yamamoto

IPC分类号： B26D5/20 ,  B26F1/38

CPC分类号： B26F1/3813 ,  B26D5/00 ,  B26D7/015 ,  B26D7/2628 ,  B26D2007/0087 ,  B26D2007/2678 ,  Y10T83/0348 ,  Y10T83/162 ,  Y10T83/538

摘要： A cut target medium driving type cutting plotter, where a cut target medium to be cut is driven in a first direction and a cutting unit is driven in a second direction perpendicular to the first direction, thereby moving the cutting unit in a two-dimensional direction relative to the cut target medium to make the cutting unit to be selectively brought into press contact with and separated from the cut target medium to cut the cut target medium in a desired shape, the cut target medium driving type cutting plotter includes a cut target medium supporting sheet to removably support the cut target medium on a surface opposite to the cutting unit. Preferably, the cut target medium is driven in the first direction together with the cut target medium supporting sheet, and the cut target medium supported on the cut target medium supporting sheet is cut by the cutting unit.

摘要翻译： 一种切割目标介质驱动型切割机，其中待切割的切割目标介质沿第一方向被驱动，并且切割单元沿与第一方向垂直的第二方向被驱动，从而沿着二维方向移动切割单元 相对于切割目标介质，切割单元选择性地与切割的目标介质压接并分离，以将切割的目标介质切割成期望的形状，切割目标介质驱动型切割机包括切割目标介质 支撑片可拆卸地支撑与切割单元相对的表面上的切割目标介质。 优选地，切割目标介质与切割的目标介质支撑片材一起沿第一方向被驱动，并且被切割的目标介质支撑片材上支撑的切割目标介质被切割单元切割。

公开(公告)号：US06344115B1

公开(公告)日：2002-02-05

申请号：US09417996

申请日：1999-10-13

申请人： Junzou Azuma ,  Akira Shimase ,  Yuichi Hamamura ,  Hidemi Koike

发明人： Junzou Azuma ,  Akira Shimase ,  Yuichi Hamamura ,  Hidemi Koike

IPC分类号： C23C1400

CPC分类号： H01J37/18 ,  C23C16/26 ,  H01J2237/317

摘要： A pattern forming method using an improved charged particle beam process, and a charged particle beam processing system prevent effectively the corrosion of a workpiece by a reactive gas adsorbed by and adhering to the surface of the workpiece when the workpiece is taken out into the atmosphere after pattern formation. The charged particle beam processing system comprises, as principal components, an ion beam chamber provided with an ion beam optical system, a processing chamber provided with a gas nozzle through which a reactive gas is blown against a workpiece, a load-lock chamber connected through a gate valve to the processing chamber. The load-lock chamber is capable of producing a plasma of an inert gas for processing the surface of the workpiece by sputtering. The workpiece is returned to the load-lock chamber after a pattern has been formed thereon in the processing chamber by reactive processing including irradiating the surface of the workpiece with a charged particle beam in an environment of the reactive gas, and the workpiece is subjected to a plasma process to remove the reactive gas adsorbed by the workpiece during pattern formation and adhering to the workpiece.

摘要翻译： 使用改进的带电粒子束工艺的图案形成方法和带电粒子束处理系统，当工件被排出到大气中之后，通过被吸收并附着在工件表面上的反应气体有效地防止工件的腐蚀 图案形成。 带电粒子束处理系统作为主要部件包括设置有离子束光学系统的离子束室，设置有气体喷嘴的处理室，反应气体通过该喷嘴吹向工件，负载锁定室通过 一个闸阀到处理室。 负载锁定室能够产生用于通过溅射处理工件的表面的惰性气体的等离子体。 在通过反应性处理在处理室中形成图案之后，工件返回到装载锁定室，包括在反应气体的环境中用带电粒子束照射工件的表面，并且对工件进行 等离子体处理，以在图案形成期间去除被工件吸附的反应气体并附着到工件上。

公开(公告)号：US5783830A

公开(公告)日：1998-07-21

申请号：US873788

申请日：1997-06-12

申请人： Hiroshi Hirose ,  Hidemi Koike ,  Shigeto Isakozawa ,  Yuji Sato ,  Mikio Ichihashi ,  Motohide Ukiana

发明人： Hiroshi Hirose ,  Hidemi Koike ,  Shigeto Isakozawa ,  Yuji Sato ,  Mikio Ichihashi ,  Motohide Ukiana

IPC分类号： H01J37/305 ,  H01J37/20

CPC分类号： H01J37/3056 ,  H01J37/265 ,  H01J2237/20 ,  H01J2237/26

摘要： A sample evaluation/process observation system includes a common sample stage which accommodates a plurality of samples to be processed. The common sample stage is provided with a processing/observing notch and also with a movement mechanism. The movement mechanism functions to sequentially move the plurality of samples to the notch to cause the samples to be exposed to a predetermined processing beam and observing beam. The system further includes a beam processing device in which the common sample stage can be mounted and which functions to irradiate the predetermined processing beam on the plurality of samples through the notch to thereby sequentially perform beam processing operation over the samples. The system further includes a beam observation device in which the common sample stage can be mounted and which functions to irradiate the predetermined observing beam on the plurality of samples through the notch to sequentially observe and evaluate shapes of the plurality of samples. A mark is formed on one sample by a focused ion beam device so that positioning of the mark realizes automatic processing of a part of the sample to be processed. Further, the common sample stage is used in a high-acceleration transmission electron microscope and a high-acceleration scanning electron microscope and focused ion beam device.

摘要翻译： 样本评估/过程观察系统包括容纳多个待处理样本的公共样本阶段。 公共样品台具有处理/观察凹口，并且还具有移动机构。 移动机构用于将多个样本顺序地移动到凹口，以使样本暴露于预定的处理束和观察波束。 该系统还包括其中可以安装公共样本台的束处理装置，并且其功能是通过凹口对多个采样上的预定处理光束照射，从而顺序地对采样进行光束处理操作。 该系统还包括其中可以安装公共样品台的束观察装置，并且其功能是通过凹口将多个样品上的预定观察光束照射，以依次观察和评估多个样品的形状。 通过聚焦离子束装置在一个样品上形成标记，使得标记的定位实现待处理样品的一部分的自动处理。 此外，普通样品台用于高加速度透射电子显微镜和高加速度扫描电子显微镜和聚焦离子束装置。

公开(公告)号：US4629930A

公开(公告)日：1986-12-16

申请号：US517696

申请日：1983-07-27

申请人： Noriyuki Sakudo ,  Osami Okada ,  Susumu Ozasa ,  Katsumi Tokiguchi ,  Hidemi Koike ,  Shunroku Taya ,  Mitsunori Komatsumoto ,  Mitsuo Komatsu

发明人： Noriyuki Sakudo ,  Osami Okada ,  Susumu Ozasa ,  Katsumi Tokiguchi ,  Hidemi Koike ,  Shunroku Taya ,  Mitsunori Komatsumoto ,  Mitsuo Komatsu

IPC分类号： H01J27/02 ,  H01J27/16 ,  H05H7/08

CPC分类号： H01J27/16 ,  H01J27/022

摘要： A plasma ion source includes a discharge chamber in which a plasma is produced by plasma generator, with an acceleration electrode being disposed adjacent to the discharge chamber in order to extract ions from the produced plasma. A deceleration electrode is disposed adjacent to the acceleration electrode to decelerate the extracted ions, and a ground electrode is disposed adjacent to the deceleration electrode. An insulator container is disposed so as to surround the discharge chamber and the respective electrodes, and a shield ring electrode of ground potential is disposed in the vicinity of the deceleration electrode and along an inner wall surface of the insulator container in order to prevent any discharge from arising across the deceleration electrode and the ground electrode.

摘要翻译： 等离子体离子源包括其中由等离子体发生器产生等离子体的放电室，其中加速电极邻近放电室设置，以从所产生的等离子体中提取离子。 减速电极与加速电极相邻地设置，以使所提取的离子减速，并且接地电极与减速电极相邻配置。 绝缘体容器设置成围绕放电室和各个电极，并且将地电位的屏蔽环电极设置在减速电极附近并且沿着绝缘体容器的内壁表面设置，以防止任何放电 来自减速电极和接地电极。