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60 条记录 (耗时 0.023 秒)

    Composition for Coating over a Photoresist Pattern Comprising a Lactam
    31.
    发明申请
    Composition for Coating over a Photoresist Pattern Comprising a Lactam 有权
    用于在包含内酰胺的光致抗蚀剂图案上涂覆的组合物

    公开(公告)号：US20080248427A1

    公开(公告)日：2008-10-09

    申请号：US11697804

    申请日：2007-04-09

    申请人： Muthiah Thiyagarajan ,  Ralph R. Dammel ,  Yi Cao ,  SungEun Hong ,  WenBing Kang ,  Clement Anyadiegwu

    发明人： Muthiah Thiyagarajan ,  Ralph R. Dammel ,  Yi Cao ,  SungEun Hong ,  WenBing Kang ,  Clement Anyadiegwu

    IPC分类号： G03C1/00

    CPC分类号： G03F7/40 ,  C09D139/00

    摘要： The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing a lactam group of structure (1) where R1 is independently selected hydrogen, C1-C4 alkyl, C1-C6 alkyl alcohol, hydroxy (OH), amine (NH2), carboxylic acid, and amide (CONH2), represents the attachment to the polymer, m=1-6, and n=1-4.The present invention also relates to a process for manufacturing a microelectronic device comprising providing a substrate with a photoresist pattern, coating the photoresist pattern with the novel coating material reacting a portion of the coating material in contact with the photoresist pattern, and removing a portion of the coating material which is not reacted with a removal solution.

    摘要翻译： 本发明涉及一种用于涂覆光致抗蚀剂图案的水性涂料组合物，其包含含有结构（1）的内酰胺基团的聚合物，其中R 1独立地选自氢，C 1〜 C 1 -C 4烷基，C 1 -C 6烷基醇，羟基（OH），胺（NH 2） ），羧酸和酰胺（CONH 2 2），表示与聚合物的连接，m = 1-6，n = 1-4。 本发明还涉及一种用于制造微电子器件的方法，包括提供具有光致抗蚀剂图案的基底，用新颖的涂层材料涂覆光致抗蚀剂图案，使一部分涂料与光致抗蚀剂图案接触，并且将一部分 不与去除溶液反应的涂料。

    Polymer suitable for photoresist compositions
    33.
    发明授权
    Polymer suitable for photoresist compositions 有权
    适用于光刻胶组合物的聚合物

    公开(公告)号：US06486282B1

    公开(公告)日：2002-11-26

    申请号：US09854312

    申请日：2001-05-11

    申请人： Ralph R. Dammel ,  Raj Sakamuri

    发明人： Ralph R. Dammel ,  Raj Sakamuri

    IPC分类号： C08F12042

    CPC分类号： G03F7/0395 ,  C08F222/32 ,  C08F232/08 ,  G03F7/0046 ,  G03F7/0382

    摘要： The present invention relates to a novel polymer comprising at least one unit derived from an ethylenically unsaturated compound containing at least one cyano functionality and at least one nonaromatic cyclic unit. The novel polymer is particularly useful when used in a photoresist composition sensitive in the deep ultraviolet region.

    摘要翻译： 本发明涉及包含至少一种衍生自含有至少一个氰基官能团和至少一个非芳族环单元的烯属不饱和化合物的单元的新型聚合物。 当用于在深紫外区域敏感的光致抗蚀剂组合物中时，该新型聚合物特别有用。

    Bottom antireflective coatings through refractive index modification by anomalous dispersion
    34.
    发明授权
    Bottom antireflective coatings through refractive index modification by anomalous dispersion 失效
    底部抗反射涂层通过异常色散的折射率修饰

    公开(公告)号：US6042992A

    公开(公告)日：2000-03-28

    申请号：US811806

    申请日：1997-03-06

    申请人： Ralph R. Dammel ,  Robert N. Norwood

    发明人： Ralph R. Dammel ,  Robert N. Norwood

    IPC分类号： H01L21/027 ,  G03F7/004 ,  G03F7/022 ,  G03F7/09 ,  G03F7/11 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40 ,  G03F7/00

    CPC分类号： G03F7/091

    摘要： The invention provides a process for the generation of an antireflective bottom layer with effective reduction of substrate reflectivity and swing curve effects in lithographic applications. It involves the use of a suitably selected monomeric and/or polymeric dye which brings the real part of the refractive index into a range which is optimal for the suppression of reflection-related effects. The refractive index change is effected via anomalous dispersion, i.e., by utilizing changes in the real part of the refractive index caused by the bottom layer's absorption.

    摘要翻译： 本发明提供了一种用于产生抗反射底层的方法，其有效降低了光刻应用中的基板反射率和摆动曲线效应。 它涉及使用适当选择的单体和/或聚合染料，其使折射率的实部成为抑制反射相关效应最佳的范围。 折射率变化通过异常色散实现，即通过利用由底层吸收引起的折射率的实部的变化来实现。

    Matarix resin for high-temperature stable photoimageable compositions
    38.
    发明授权
    Matarix resin for high-temperature stable photoimageable compositions 失效
    Matarix树脂用于高温稳定的可光成像组合物

    公开(公告)号：US5510420A

    公开(公告)日：1996-04-23

    申请号：US353000

    申请日：1994-12-09

    申请人： Ralph R. Dammel ,  Owen B. Evans

    发明人： Ralph R. Dammel ,  Owen B. Evans

    IPC分类号： C08F8/00 ,  C08F257/00 ,  C08L61/10 ,  G03F7/023 ,  G03F7/033

    CPC分类号： G03F7/0233 ,  C08F8/00

    摘要： The present invention relates to a novel matrix resin for high-temperature stable photoimageable compositions, in the form of a graft copolymer of monomeric or lower oligomeric hydroxyphenyl units grafted onto a polymer backbone containing reactive sites, to a process for its production and to its use as a matrix resin in photoimageable compositions either in a pure form or in admixture with other polymeric materials.

    摘要翻译： 本发明涉及一种用于高温稳定可光成像组合物的新型基质树脂，其形式为接枝到含有反应性位点的聚合物骨架上的单体或低级低聚羟苯基单元的接枝共聚物，其生产方法及其用途 作为可光成像组合物中的基质树脂，以纯形式或与其它聚合物材料混合。

    Hardmask process for forming a reverse tone image using polysilazane
    40.
    发明授权
    Hardmask process for forming a reverse tone image using polysilazane 有权
    使用聚硅氮烷形成反向色调图像的硬掩模工艺

    公开(公告)号：US08084186B2

    公开(公告)日：2011-12-27

    申请号：US12368720

    申请日：2009-02-10

    申请人： David Abdallah ,  Ralph R. Dammel ,  Yusuke Takano ,  Jin Li ,  Kazunori Kurosawa

    发明人： David Abdallah ,  Ralph R. Dammel ,  Yusuke Takano ,  Jin Li ,  Kazunori Kurosawa

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/26 ,  G03F7/40

    CPC分类号： G03F7/40 ,  H01L21/02123 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/0234 ,  H01L21/0337 ,  H01L21/31138 ,  H01L21/3125 ,  Y10T428/24802

    摘要： The present invention relates to a process for forming an reverse tone image on a device comprising; a) forming an optional absorbing organic underlayer on a substrate; b) forming a coating of a photoresist over the underlayer; c) forming a photoresist pattern; d) forming a polysilazane coating over the photoresist pattern from a polysilazane coating composition, where the polysilazane coating is thicker than the photoresist pattern, and further where the polysilazane coating composition comprises a silicon/nitrogen polymer and an organic coating solvent; e) etching the polysilazane coating to remove the polysilazane coating at least up to a level of the top of the photoresist such that the photoresist pattern is revealed; and, f) dry etching to remove the photoresist and the underlayer which is beneath the photoresist, thereby forming an opening beneath where the photoresist pattern was present.The invention further relates to a product of the above process and to a microelectronic device made from using the above process.

    摘要翻译： 本发明涉及一种在装置上形成反向色调图像的方法，包括： a）在衬底上形成可选的吸收有机底层; b）在底层上形成光致抗蚀剂的涂层; c）形成光致抗蚀剂图案; d）从聚硅氮烷涂料组合物在光致抗蚀剂图案上形成聚硅氮烷涂层，其中聚硅氮烷涂层比光致抗蚀剂图案厚，此外聚硅氮烷涂层组合物包含硅/氮聚合物和有机涂层溶剂; e）蚀刻聚硅氮烷涂层以除去聚硅氮烷涂层至少高达光致抗蚀剂顶部的水平，使得光刻胶图案显露出来; 以及f）干蚀刻以除去光致抗蚀剂下面的光致抗蚀剂和底层，从而在存在光致抗蚀剂图案的下方形成开口。 本发明还涉及上述方法的产品和使用上述方法制造的微电子器件。