公开(公告)号：US11133649B2

公开(公告)日：2021-09-28

申请号：US16448415

申请日：2019-06-21

Applicant: Palo Alto Research Center Incorporated

Inventor： Thomas Wunderer

IPC: H01S5/12 ,  H01S5/20

Abstract: A laser includes an active region surrounded by first and second waveguide layers. Two or more mask openings are formed within a dielectric layer on a surface parallel to the active region. A refractive grating is formed on the dielectric mask openings and includes three-dimensional grating features spaced apart in the light-propagation direction of the laser. The refractive grating provides modulation of a real part of the effective refractive index of the laser and modulation of the imaginary part is provided by modulation of the current flow through the mask openings.

公开(公告)号：US10277005B2

公开(公告)日：2019-04-30

申请号：US15703534

申请日：2017-09-13

Applicant: Palo Alto Research Center Incorporated

Inventor： Jorg Jeschke ,  Thomas Wunderer ,  Mark Teepe

IPC: H01S3/0959 ,  H01S5/028 ,  H01S5/04 ,  H01S5/32 ,  H01S5/20 ,  H01S5/40

Abstract: An edge emitting structure includes an active region configured to generate radiation in response to excitation by a pumping beam incident on the structure. A front facet of the edge emitting structure is configured to emit the radiation generated by the active region. A metallic reflective coating disposed on at least one of the front and rear facets of the edge emitting structure. The metallic reflective coating is configured to reflect the radiation generated by the active region.

公开(公告)号：US10135227B1

公开(公告)日：2018-11-20

申请号：US15600569

申请日：2017-05-19

Applicant: Palo Alto Research Center Incorporated

Inventor： Thomas Wunderer ,  Noble M. Johnson

IPC: H01S5/00 ,  H01S5/32 ,  H01S5/343 ,  H01S5/04 ,  H01S5/125

CPC classification number: H01S5/3202 ,  H01L33/16 ,  H01L33/32 ,  H01S5/04 ,  H01S5/125 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/04

Abstract: An ultraviolet (UV) radiation emitting device includes an epitaxial heterostructure comprising an AlGaInN active region. The AlGaInN active region includes one or more quantum well structures with Al content greater than about 50% and having a non-c-plane crystallographic growth orientation. The AlGaInN active region is configured to generate UV radiation in response to excitation by an electron beam generated by an electron beam pump source.

公开(公告)号：US09905727B2

公开(公告)日：2018-02-27

申请号：US15345046

申请日：2016-11-07

Applicant: Palo Alto Research Center Incorporated

Inventor： Thomas Wunderer

IPC: H01L21/02 ,  H01L33/12 ,  H01L29/20 ,  H01L21/78 ,  H01L33/00 ,  H01L29/778 ,  H01L29/861 ,  H01L33/06 ,  H01L33/32 ,  H01L33/40 ,  H01S5/042 ,  H01S5/183 ,  H01S5/187 ,  H01S5/343

CPC classification number: H01L33/12 ,  H01L21/02458 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/02664 ,  H01L21/7813 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/32 ,  H01L29/7787 ,  H01L29/8613 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/32 ,  H01L33/405 ,  H01S5/0421 ,  H01S5/183 ,  H01S5/187 ,  H01S5/34333

Abstract: A thin film device described herein includes a first thin film layer, a second film layer and a heterostructure within the second film layer. The first thin film layer is atop a substrate. The second thin film layer is grown from the first thin film layer through a patterned mask, having openings, under selective area growth (SAG) conditions. The second thin film layer is configured to be released from the first thin film layer by etching a trench. The etched trench may provide access to the patterned mask and the patterned mask may be eliminated with a wet etchant.

公开(公告)号：US09780532B1

公开(公告)日：2017-10-03

申请号：US15357699

申请日：2016-11-21

Applicant: Palo Alto Research Center Incorporated

Inventor： Farsane Tabataba-Vakili ,  Thomas Wunderer

IPC: H01S3/08 ,  H01S5/183 ,  H01S5/04 ,  H01S5/187 ,  H01S5/024 ,  H01S5/343 ,  H01S5/14 ,  H01S5/10

CPC classification number: H01S5/141 ,  H01S3/08059 ,  H01S5/02476 ,  H01S5/04 ,  H01S5/041 ,  H01S5/0425 ,  H01S5/1025 ,  H01S5/14 ,  H01S5/18305 ,  H01S5/18366 ,  H01S5/18369

Abstract: Disclosed herein are embodiments of a vertical external cavity surface emitting laser (VECSEL) device that utilizes an external micromirror array, and methods of fabricating and using the same. In one embodiment, a VECSEL device includes a gain chip, a mirror, and a micromirror array. The gain chip includes a gain medium. The micromirror array includes a plurality of curved micromirrors. The micromirror array and the mirror define an optical cavity, and the micromirror array is oriented such that at least one of the curved micromirrors is to reflect light generated by the gain medium back toward the gain medium along a length of the optical cavity.

公开(公告)号：US09640732B2

公开(公告)日：2017-05-02

申请号：US15003251

申请日：2016-01-21

Applicant: PALO ALTO RESEARCH CENTER INCORPORATED

Inventor： Thomas Wunderer ,  Christopher L. Chua ,  Noble M. Johnson

IPC: H01L33/48 ,  H01L33/32 ,  H01L33/20 ,  H01L33/38 ,  H01L27/15 ,  H01L33/00 ,  H01L33/14

CPC classification number: H01L33/48 ,  H01L27/15 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/145 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/385 ,  H01L33/44 ,  H01L2933/0016

Abstract: Diode includes light emitting region, first metal layer, dielectric layer, and second metal layer. Light emitting diode includes n-type group III-nitride portion, p-type group III-nitride layer, and light emitting region sandwiched between n- and p-type layers. First metal layer may be coupled to p-type III-N portion and plurality of first terminals. First metal layer and p-type III-N portion may have substantially similar lateral size that is smaller than 200 micrometers. A portion of light emitting region and first metal layer may include a single via. Electrically-insulating layer may be coupled to first metal layer and sides of the single via. First terminals may be exposed from electrically-insulating layer. Second metal layer may include second terminal and may be coupled to electrically-insulating layer and to n-type III-N portion through the single via. The thickness of the diode excluding second terminal may be between 2 and 20 micrometers. Other embodiments are described.

公开(公告)号：US20160254648A1

公开(公告)日：2016-09-01

申请号：US15149595

申请日：2016-05-09

Applicant: Palo Alto Research Center Incorporated

Inventor： Thomas Wunderer ,  Christopher L. Chua ,  Brent S. Krusor ,  Noble M. Johnson

IPC: H01S5/183 ,  H01S5/343 ,  G01N21/17 ,  G02B5/08

CPC classification number: H01S5/18363 ,  B82Y20/00 ,  G01N21/17 ,  G01N21/41 ,  G01N2201/0635 ,  G01N2201/08 ,  G02B5/0816 ,  G02B5/085 ,  H01S5/18308 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/34333 ,  H01S2304/04

Abstract: A device includes one or more reflector components. Each reflector component comprises layer pairs of epitaxially grown reflective layers and layers of a non-epitaxial material, such as air. Vias extend through at least some of the layers of the reflector components. The device may include a light emitting layer.

Abstract translation: 装置包括一个或多个反射器部件。 每个反射器组件包括外延生长反射层的层对和非外延材料（例如空气）的层。 通孔延伸穿过反射器部件的至少一些层。 该装置可以包括发光层。

公开(公告)号：US20150340223A1

公开(公告)日：2015-11-26

申请号：US14283392

申请日：2014-05-21

Applicant: Palo Alto Research Center Incorporated

Inventor： Thomas Wunderer

IPC: H01L21/02 ,  H01L29/20

CPC classification number: H01L33/12 ,  H01L21/02458 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/02664 ,  H01L21/7813 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/32 ,  H01L29/7787 ,  H01L29/8613 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/32 ,  H01L33/405 ,  H01S5/0421 ,  H01S5/183 ,  H01S5/187 ,  H01S5/34333

Abstract: A thin film device described herein includes a first thin film layer, a second film layer and a heterostructure within the second film layer. The first thin film layer is atop a substrate. The second thin film layer is grown from the first thin film layer through a patterned mask, having openings, under selective area growth (SAG) conditions. The second thin film layer is configured to be released from the first thin film layer by etching a trench. The etched trench may provide access to the patterned mask and the patterned mask may be eliminated with a wet etchant.

Abstract translation: 本文所述的薄膜器件包括第一薄膜层，第二膜层和第二膜层内的异质结构。 第一薄膜层位于基底之上。 在选择性面积生长（SAG）条件下，第二薄膜层通过具有开口的图案化掩模从第一薄膜层生长。 第二薄膜层被配置为通过蚀刻沟槽从第一薄膜层释放。 蚀刻的沟槽可以提供对图案化掩模的访问，并且可以用湿蚀刻剂去除图案化掩模。

公开(公告)号：US20150179873A1

公开(公告)日：2015-06-25

申请号：US14137919

申请日：2013-12-20

Applicant: PALO ALTO RESEARCH CENTER INCORPORATED

Inventor： Thomas Wunderer ,  Christopher L. Chua ,  Noble M. Johnson

IPC: H01L33/00 ,  H01L33/20 ,  H01L33/62 ,  H01L33/46 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/48 ,  H01L27/15 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/145 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/385 ,  H01L33/44 ,  H01L2933/0016

Abstract: Diode includes light emitting region, first metal layer, dielectric layer, and second metal layer. Light emitting diode includes n-type group III-nitride portion, p-type group III-nitride layer, and light emitting region sandwiched between n- and p-type layers. First metal layer may be coupled to p-type III-N portion and plurality of first terminals. First metal layer and p-type III-N portion may have substantially similar lateral size that is smaller than 200 micrometers. A portion of light emitting region and first metal layer may include a single via. Electrically-insulating layer may be coupled to first metal layer and sides of the single via. First terminals may be exposed from electrically-insulating layer. Second metal layer may include second terminal and may be coupled to electrically-insulating layer and to n-type III-N portion through the single via. The thickness of the diode excluding second terminal may be between 2 and 20 micrometers. Other embodiments are described.

Abstract translation: 二极管包括发光区域，第一金属层，电介质层和第二金属层。 发光二极管包括n型III族氮化物部分，p型III族氮化物层和夹在n型和p型层之间的发光区域。 第一金属层可以耦合到p型III-N部分和多个第一端子。 第一金属层和p型III-N部分可以具有基本相似的横向尺寸，小于200微米。 发光区域和第一金属层的一部分可以包括单个通孔。 电绝缘层可以耦合到单个通孔的第一金属层和侧面。 第一端子可以从电绝缘层暴露出来。 第二金属层可以包括第二端子，并且可以通过单个通孔耦合到电绝缘层和n型III-N部分。 不包括第二端子的二极管的厚度可以在2和20微米之间。 描述其他实施例。

公开(公告)号：US20240192032A1

公开(公告)日：2024-06-13

申请号：US18078189

申请日：2022-12-09

Applicant: PALO ALTO RESEARCH CENTER INCORPORATED

Inventor： Thomas Wunderer ,  Ching-Fuh Lin ,  Christopher L. Chua

IPC: G01D5/353 ,  G01K11/3206 ,  G01L1/24

CPC classification number: G01D5/35316 ,  G01K11/3206 ,  G01L1/246

Abstract: A sensor includes a light emitter capable of producing stimulated emission. The sensor includes an optical fiber comprising at least one fiber Bragg grating. A first end of the optical fiber is optically coupled to a first emitting end of the light emitter. The fiber Bragg grating is located at a measurement region of the optical fiber away from the first end. A change in wavelength of the laser emission in the optical fiber is induced by a change in peak reflectivity of the fiber Bragg grating. The change in the peak reflectivity occurs in response to an environmental change at the measurement region, e.g., which changes a physical periodicity and/or the refractive index of the grating. The sensor includes an optical detector coupled to the optical fiber or the light emitter that detects the change in the wavelength.