Ultra fine pitch and spacing interconnects for substrate
    35.
    发明授权
    Ultra fine pitch and spacing interconnects for substrate 有权
    用于衬底的超细间距和间距互连

    公开(公告)号:US08772951B1

    公开(公告)日:2014-07-08

    申请号:US14014192

    申请日:2013-08-29

    Abstract: Some novel features pertain to a substrate that includes a first dielectric layer, a first interconnect embedded in a first surface of the first dielectric layer, and a second interconnect on the first surface of the first dielectric layer. The first interconnect is offset from the first surface of the first dielectric layer. The first interconnect being offset towards an inner portion of the first dielectric layer. In some implementations, the substrate further includes a third interconnect embedded in the first surface of the first dielectric layer, and a fourth interconnect on the first surface of the first dielectric layer. The first interconnect and the second interconnect are adjacent interconnects. In some implementations, the substrate further includes a first pad on the first surface of the first dielectric layer. The first pad is coupled to the first interconnect.

    Abstract translation: 一些新颖的特征涉及包括第一介电层,嵌入在第一介电层的第一表面中的第一互连以及在第一介电层的第一表面上的第二互连的衬底。 第一互连件与第一介电层的第一表面偏移。 第一互连件朝向第一介电层的内部部分偏移。 在一些实施方案中,衬底还包括嵌入在第一介电层的第一表面中的第三互连和在第一介电层的第一表面上的第四互连。 第一互连和第二互连是相邻的互连。 在一些实施方案中,衬底还包括在第一介电层的第一表面上的第一焊盘。 第一焊盘耦合到第一互连。

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